Korringa relaxation time of magnetic ion system near a two-dimensional electron gas

Spin relaxation of Mn ions in a (Cd,Mn)Te quantum well with quasi-two-dimensional carriers (Q2DEG) is investigated. The mechanism of energy transfer is spin-flip scattering of Mn spin with electrons making transitions between spin subbands accompanied by a change in the Mn spin. A calculation of the spin-flip scattering rate shows that the Mn spin relaxation rate is proportional to the coupling constant squared, the density of states squared, and the electron temperature, the so called Korringa relaxation rate. It was found that for small Mn ion concentration, the relaxation time ≈10−7-10−6s is in a good agreement with experimental results. Moreover, the relaxation rate scales with L⁻², L being the well width, and it can be enhanced over its value in bulk.     

Spin-wave relaxation in a quantum hall ferromagnet

We study spin wave relaxation in quantum Hall ferromagnet regimes. Spin-orbit coupling is considered as a factor determining spin nonconservation, and external random potential as a cause of energy dissipation making spin-flip processes irreversible. We compare this relaxation mechanism with other relaxation channels existing in a quantum Hall ferromagnet. The article is published in the original.     

Direct spin–phonon coupling of spin-flip relaxation in quantum dots

Within the frame of the Pavlov–Firsov spin–phonon coupling model, we study the spin-flip assisted by the acoustical phonon scattering between the first-excited state and the ground state in quantum dots. We analyze the behaviors of the spin relaxation rates as a function of an external magnetic field and lateral radius of quantum dot. The different trends of the relaxation rates depending on the magnetic field and lateral radius are obtained, which may serve as a channel to distinguish the relaxation processes and thus control the spin state effectively.     

Electron-electron spin-flip scattering and spin relaxation in III–V and II–VI semiconductors

Spin relaxation time of conduction electrons resulting from electron-electron spin-flip collisions has been investigated in III–V and II–VI semiconductors with InSb-like energy band structure. Analytical expression has been obtained for non-degenerate electron gas. The proposed mechanism can be dominent in the experimental conditions of electron spin resonance in InSb at higher temperatures.     

Ab initio GW calculations of the time and length of spin relaxation of excited electrons in metals with inclusion of the spin-orbit coupling

An ab initio method has been proposed for calculating the spin relaxation time of excited electrons in metals in the framework of the GW method with inclusion of the spin-orbit coupling. The time and length of spin relaxation in Al, Cu, Au, Nb, and Ta have been calculated. The concept of the spin-flip phase space has been introduced. It has been demonstrated that the ratio between the spin relaxation time and the lifetime of the excited electron is well explained within this concept. The time and length of spin relaxation in Nb appear to be considerably shorter than those in Al, Cu, and Au. These quantities in Ta are especially small in accordance with the strong spin-orbit coupling. A comparison of the results with the previous data on the time and length of spin relaxation due to the interaction with impurities and phonons shows that, at an excited electron energy of the order of 1 eV, the inelastic electron-electron scattering in the presence of spin-orbit coupling is a dominant mechanism of spin relaxation.     

Carrier tunneling in asymmetric coupled quantum dots

Exciton spin relaxation at low temperatures in InAlAs–InGaAs asymmetric double quantum dots embedded in AlGaAs layers has been investigated as a function of the barrier thickness by the time-resolved photoluminescence measurements. With decreasing the thickness of the AlGaAs layer between the dots, the spin relaxation time change from 3 ns to less than 500 ps. The reduction in the spin relaxation time was considered to originate from the spin-flip tunneling between the ground state in InAlAs dot and the excited states in InGaAs dot, and the resultant tunneling leads to the spin depolarization of the ground state in InGaAs dot.     

Field-induced negative differential spin lifetime in silicon

We show that the electric-field-induced thermal asymmetry between the electron and lattice systems in pure silicon substantially impacts the identity of the dominant spin relaxation mechanism. Comparison of empirical results from long-distance spin transport devices with detailed Monte?Carlo simulations confirms a strong spin depolarization beyond what is expected from the standard Elliott-Yafet theory even at low temperatures. The enhanced spin-flip mechanism is attributed to phonon emission processes during which electrons are scattered between conduction band valleys that reside on different crystal axes. This leads to anomalous behavior, where (beyond a critical field) reduction of the transit time between spin-injector and spin-detector is accompanied by a counterintuitive reduction in spin polarization and an apparent negative spin lifetime.     

A virtual intersubband spin–flip spin–orbit coupling induced spin relaxation in GaAs (110) quantum wells

A spin relaxation mechanism is proposed based on a second-order spin–flip intersubband spin–orbit coupling together with the spin-conserving scattering. The corresponding spin relaxation time is calculated via the Fermi golden rule. It is shown that this mechanism is important in symmetric GaAs (110) quantum wells with high impurity density. The dependencies of the spin relaxation time on electron density, temperature and well width are studied with the underlying physics analyzed.     

Zeeman energy and spin relaxation in a one-electron quantum dot

We have measured the relaxation time, T1, of the spin of a single electron confined in a semiconductor quantum dot (a proposed quantum bit). In a magnetic field, applied parallel to the two-dimensional electron gas in which the quantum dot is defined, Zeeman splitting of the orbital states is directly observed by measurements of electron transport through the dot. By applying short voltage pulses, we can populate the excited spin state with one electron and monitor relaxation of the spin. We find a lower bound on T1 of 50 micros at 7.5 T, only limited by our signal-to-noise ratio. A continuous measurement of the charge on the dot has no observable effect on the spin relaxation.     

Nonequilibrium transport through a vertical quantum dot in the absence of spin-flip energy relaxation

We investigate nonequilibrium transport in the absence of spin-flip energy relaxation in a few-electron quantum dot artificial atom. Novel nonequilibrium tunneling processes involving high-spin states, which cannot be excited from the ground state because of spin blockade, and other processes involving more than two charge states are observed. These processes cannot be explained by orthodox Coulomb blockade theory. The absence of effective spin relaxation induces considerable fluctuation of the spin, charge, and total energy of the quantum dot. Although these features are revealed clearly by pulse excitation measurements, they are also observed in conventional dc current characteristics of quantum dots.     

Hyperfine switching triggered by resonant tunneling for the detection of a single nuclear spin qubit

A novel detection mechanism and a robust control of a single nuclear spin-flip by hyperfine interactions between the nuclear spin and tunneling electron spin are proposed on the basis of ab initio non-equilibrium Green's function calculations. The calculated relaxation times of the nuclear spin of proton in a nano-contact system, Pd(electrode)-H₂-Pd(electrode), show that ON/OFF switching of hyperfine interactions is effectively triggered by resonant tunneling mediated through the d-orbitals of Pd. The relaxation times at ON-resonance are ∼¹⁰³ times faster than those at OFF-resonance, indicating that ON-resonance is suitable for the detection (read-out) of nuclear spin states. In addition, the effectiveness of bias voltage applications at OFF-resonance for selective operations on the proton qubit is demonstrated in the calculations of the resonant frequencies of proton using the gauge-invariant atomic orbital method.     

Electric field control of spin splitting in III–V semiconductor quantum dots without magnetic field

We provide an alternative means of electric field control for spin manipulation in the absence of magnetic fields by transporting quantum dots adiabatically in the plane of two-dimensional electron gas. We show that the spin splitting energy of moving quantum dots is possible due to the presence of quasi-Hamiltonian that might be implemented to make the next generation spintronic devices of post CMOS technology. Such spin splitting energy is highly dependent on the material properties of semiconductor. It turns out that this energy is in the range of meV and can be further enhanced with increasing pulse frequency. In particular, we show that quantum oscillations in phonon mediated spin-flip behaviors can be observed. We also confirm that no oscillations in spin-flip behaviors can be observed for the pure Rashba or pure Dresselhaus cases.     

Pairing of spin excitations in lateral quantum dots

We demonstrate the existence of correlated electronic states as paired spin excitations of lateral quantum dots in the integer quantum Hall regime. Starting from the spin-singlet filling-factor nu=2 droplet, by increasing the magnetic field we force the electrons to flip spins and increase the spin polarization. We identify the second spin-flip process as one accompanied by correlated, spin depolarized phases, interpreted as pairs of spin excitons. The correlated states are identified experimentally in few-electron lateral quantum dots using high source-drain voltage spectroscopy.     

Spin-flip relaxation in a two-electron quantum dot with spin-phonon coupling

We study the spin-flip process from the first excited state to the ground state due to the spin-phonon coupling in a two-electron quantum dot in the presence of a magnetic field. We give several possible relaxation channels before and after the crossing of the Zeeman sublevels. Our results show that the Coulomb interactions between the electrons of different channels play quite different roles and thus inducing different spin relaxation behaviors.     

Nuclear spin conversion in diatomic molecules

A mechanism of the internal interaction in dimers that mixes different nuclear spin modifications has been proposed. It has been shown that the intramolecular current associated with transitions between electronic terms of different parities can generate different magnetic fields on nuclei, leading to transitions between spin modifications and to the corresponding changes in rotational states. In the framework of the known quantum relaxation process, this interaction initiates irreversible conversion of nuclear spin modifications. The estimated conversion rate for nitrogen at atmospheric pressure is quite high (10^?3–10^?5 s^?1).     

Spin polarization dependent optical transition rates observed in the integer quantum Hall region

We report on a field-dependent photoluminescence (PL) emission rate for the transitions between band states in modulation-doped CdTe/Cd_1−xMg_xTe single quantum wells in the integer quantum Hall region. The recombination time observed for the magneto-PL spectra varies in concomitance with the integer quantum Hall plateaus. Furthermore, different PL decay times were observed for the two circular polarizations, i.e. for the transitions between the Zeeman split subbands of the Landau levels. We analyzed the data in comparison with the experimentally determined spin polarization of the conduction electrons and the Zeeman splitting of the valence band. Furthermore, we discuss the relevance of the spin polarization of the conduction electrons, the electron–hole exchange interaction and the spin-flip processes of the hole states for the PL decay time.     

(110)-GaAs量子阱中光生载流子对电子自旋弛豫的影响

我们实验研究了(110)-GaAs量子阱中光生载流子对电子自旋弛豫的影响。通过测量量子阱的荧光寿命和光学吸收计算,我们能得到不同泵浦光功率下的带间吸收所产生的空穴浓度;相对应地,通过双色磁光科尔旋转技术,我们测量了该GaAs量子阱中电子自旋的动力学过程。结合两者,我们得到了电子自旋弛豫速率与空穴浓度的关系。实验结果表明电子自旋弛豫速率与空穴浓度呈线性依赖关系,验证了BirAronov-Pikus机制主导该体系的电子自旋弛豫。     

Observation of intersubband excitations in a multilayer two dimensional electron gas

We report the observation, by resonant inelastic light scattering, of intersubband excitations of the multilayer two dimensional electron gas, in modulation doped GaAsAlGaAs heterojunction superlattices. These are the first measurements of these transitions by any technique, and furnish intersubband energies in good agreement with calculated values. The spectral bands are broad, and nearly Lorentzian in shape: the implied relaxation rates scale linearly with band energy and are significantly faster than transport relaxation rates. Finally, the polarized spectra reveal differences between spin-flip and non spin-flip excitations which are unique to multilayer two dimensional electron gases.     

Spin-flip transitions of two-dimensional electrons in nonsymmetric heterostructures

The absorption of far-infrared radiation due to electron transitions between spin-split states in nonsymmetric quantum wells excited by a plane-polarized electric field is considered. It is shown that a relative contribution of the exchange renormalization of spin-flip transitions decreases as the concentration of two-dimensional electrons increases. The shape of the absorption peak under resonance transitions is calculated for the case when the line broadening is determined using scattering by static defects. The effect of the Coulomb interaction on the shape of the peak is taken into account, and the suppression of spin-flip absorption due to temperature growth is described.     

Cyclotron spin-flip mode in the extreme quantum limit

In a two-dimensional electron system, the combined excitation (the cyclotron spin-flip mode) associated with changes in both orbital and spin quantum numbers is investigated. The energy of the cyclotron spin-flip mode is studied as a function of the electron filling factor. Comparative dependences of the decay times of the cyclotron spin-flip mode and the magnetoplasmon are measured. It is shown that, as the filling factor increases from v = 0 or decreases from v = 1, the damping of the cyclotron spin-flip mode increases significantly, while the magnetoplasma mode remains undamped.