Response of the capacitance and dielectric loss of the SrRuO<Subscript>3</Subscript>/SrTiO<Subscript>3</Subscript>/SrRuO<Subscript>3</Subscript> film heterostructures to variations in temperature and electric field

Three-layer epitaxial heterostructures with a 750-nm-thick intermediate strontium titanate layer between two strontium ruthenate conductive thin-film electrodes have been grown by laser deposition. Photolithography and ion etching have been used to form film parallel-plate capacitors based on the grown heterostructures. The capacitance (C) and dielectric loss tangent (tanδ) of the parallel-plate capacitors have been measured in the temperature range T = 4.2–300 K at an applied bias voltage of up to ±2.5 V and without it. At T > 100 K, the temperature dependence of the dielectric permittivity (ε) of the SrTiO₃ intermediate layer is well approximated by the Curie–Weiss law taking into account the capacitance induced by the penetration of an electric field into the oxide electrodes. At T ≈ 20 K, the dielectric permittivity ε of the SrTiO₃ intermediate layer decreases by approximately 20% in an electric field of 25 kV/cm. The dielectric loss tangent of the film capacitor heterostructures decreases monotonically with a decrease in the temperature in the range from 300 to 80 K and almost does not depend on the electric field strength. However, in the range from 80 to 4.2 K, the dielectric loss tangent increases nonmonotonically (abruptly) with a decrease in the temperature and decreases significantly in an applied electric field.     

Temperature dependence of phase shift in ferrite phase shifters

Reciprocal ferrite phase shifters exhibit a pronounced dependence of phase shift upon temperature. In a sample of magnesium-copper-chromium ferrite it is shown that the temperature dependence of the phase shift is basically determined by the temperature dependence of the microwave magnetic permeability.In conclusion the authors wish to thank G. I. Yudin for making the measurements of phase shift and its dependence on the field for various temperatures.     

Dielectric-spectroscopic and a.c. conductivity studies on layered Na2-XKXTi3O7 (X=0.2, 0.3, 0.4) ceramics

The dependence of loss tangent (tanδ) and relative permittivity (ε_r) on temperature and frequency has been reported for Na_2-XK_XTi₃O₇ (with X=0.2, 0.3, 0.4) ceramics. The losses are characteristic of dipole mechanism and electrical conduction. The peaks of ε_r at high temperature indicate a possible ferroelectric phase transition for all three compositions. The results of a.c. conductivity studies on the same samples have also been reported. The corresponding ln(σT) versus 1000/T plots have been divided into five regions namely I, II, III, IV and V. The various conduction mechanisms in the different regions have been stressed. Furthermore, the log(σ) versus frequency plots for all the above samples reveal that the electronic hopping (polaron) conduction, which diminishes with the rise in temperature, is dominant in the lower temperature region. The interlayer ionic conduction seems to play a major role in conduction towards higher temperature.     

Investigation of electrical properties (ac and dc) of organic zinc phthalocyanine,ZnPc, semiconductor thin films

We report measurements on the electrical properties of thermally evaporated zinc phthalocyanine, ZnPc, semiconductor thin films. Aluminum and gold metal electrodes were used and both proved to act as ohmic contacts. A relative permittivity, ε_r, of 1.56 was estimated from the dependence of capacitance on film thickness. The room temperature current density–voltage measurements indicated an ohmic conduction at low voltages, while a space–charge-limited conduction at higher voltages. An average value of a thermally generated hole concentration of the order 10¹³ m⁻³ was estimated at room temperature.The ac conductivity, capacitance and loss tangent were measured over a wide range of temperature (from 170 to 430 K) and frequency (between 0.1 and 20 kHz). The ac conductivity of ZnPc films was observed to be proportional to ω^s, where ω is the angular frequency, and the index s is a temperature and frequency-dependent constant. At low temperatures and for higher frequencies the ac conduction was due to hopping. The capacitance, as well as the loss tangent, was found to be dependent on both temperature and frequency, but was constant for all frequencies at low temperatures. Such dependences were accounted for the equivalent-circuit model consisting of inherent capacitance in parallel with a temperature dependent resistive element.     

Dielectric properties and magnetoelectric effect of (x)NiFe2O4+(1−x)Ba0.8Sr0.2TiO3 composites

Magnetoelectric composites of NiFe₂O₄ and Ba_0.8Sr_0.2TiO₃ were prepared using conventional double-sintering ceramic method. The phase formation of magnetoelectric composites was confirmed by XRD technique. Variation of dielectric constant and loss tangent at room temperature with frequency in the range 100 Hz-1 MHz has been studied. Also the variation of dielectric constant and loss tangent with temperature and composition at fixed frequencies of 1 kHz, 10 kHz, 100 kHz and 1 MHz is reported. The static value of the magnetoelectric conversion factor was measured as a function of intensity of the magnetic field. The ME voltage coefficient of about 430 μV/cm Oe was observed for 15% NiFe₂O₄+85% Ba_0.8Sr_0.2TiO₃ composite. All the samples show linear variation of magnetoelectric conversion in the presence of static magnetic field.     

Mach-Zehnder interferometric optical switch with MEMS phase shifter

We propose a novel Mach-Zehnder interferometric optical switching device with micro-electro-mechanical systems (MEMS) phase shifters. Analytical results show that the stretch length per phase shifter is 70 nm at an applied voltage of 100 V. Phase switching can be achieved by the cascade connections of fifteen phase shifters.     

Physical principles of the design of electrically controllable microstrip devices

Electrically controllable microstrip microwave devices are investigated in which liquid crystals, high-temperature superconducting films, or varactors are used as active media. It is demonstrated that comparatively large controllable phase shifts can be obtained using resonant liquid crystal or varactor phase shifters; however, in this case, the working frequency band of the devices become significantly narrower. The possibilities of obtaining maximum frequency tuning of filters whose bandwidth in the tuning frequency range remains unchanged or changes by a preset law are demonstrated. Varactor designs of two-channel power dividers with a smoothly varying division coefficient between the channels are considered. An original device protecting from a radio pulse based on a superconducting film in which total pulse reflection is observed when the pulse power exceeds a preset threshold is investigated. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 36–45, September, 2008.     

Diffuse phase transition in Ba5NdTi3−xZrxNb7O30 ferroelectric ceramics

Polycrystalline samples of Ba₅NdTi_3−xZr_xNb₇O₃₀ (x=0, 1, 2, 3) compounds of the tungsten-bronze (TB) structural family were prepared by a high-temperature solid-state reaction technique. X-ray study of the compounds shows the formation of single phase compounds in the orthorhombic crystal system at room temperature. Detailed studies of the dielectric properties (dielectric constant and loss tangent) as a function of temperature (−50 to 350°C) at four different frequencies, 1, 10, 100 and 1000 kHz show relaxor behavior and diffuse phase transition of the compounds. Study of temperature dependence of resistivity shows that these compounds have negative temperature coefficients of resistance (NTCR).     

Effect of the microwave signal power on the controllability of a ferroelectric phase shifter

We consider a microwave phase shifter based on thin-film ferroelectric parallel-plate capacitors operating as a part of a phased array at an elevated microwave power level and for a limited power in the control circuits. To eliminate capacitance modulation in parallel-plate capacitors by an ac field, we propose the separation of the effects of the dc control voltage and the ac voltage based on the symmetry of the capacitance-voltage characteristic of the unit including two capacitors parallel-connected in the ac voltage U _ac and series-connected in dc voltage U _dc. The experiment shows that for U _dc > U _ac, the phase of the wave passing through the phase shifter weakly depends on the microwave signal power. The reflection phase shifter is tested for a pulsed power of the microwave signal up to 6 W and a power in the control circuit on the order of 10 μW.     

Microwave losses in ABO3 type perovskites

Using Green’s function method, microwave lossess were theoretically calculated for BaTiO₃, SrTiO₃ and KTaO₃ ferroelectric perovskites. In microwave range, an increase in frequency is followed by an increase in the dielectric loss. In the paraelectric phase, the dielectric loss decreases with increasing temperature showing the Curie-Weiss behaviour of the tangent loss.     

Structure and dielectric studies of nano-composite Fe2O3: BaTiO3 prepared by sol-gel method

Nano-structure pure barium titanate (BaTiO₃) and that was doped with iron oxide (Fe₂O₃), have been prepared by sol-gel method, using barium acetate (Ba(Ac)₂) and titanium butoxide (Ti(C₄H₉O)₄), as precursors. The as-grown prepared samples by sol-gel technique were found to be amorphous, which crystallized to the tetragonal phase after synthesized at 750 °C in air for 1 h as detected from the XRD patterns. The XRD data were confirmed by transmission electron microscope (TEM). The dielectric properties namely; dielectric constant (ε′) and loss tangent (tan δ) in the frequency range between 42 Hz and 1 MHz, at range of temperature 25-250 °C were investigated. The temperature dependence of ε′ and tan δ for the undoped and doped materials, at 1 kHz, was also investigated. As a result, tan δ increased rapidly with decreasing temperature below 125 °C (Curie temperature) while above this temperature, tan δ shows temperature independent. As a result, below and above Curie temperature, ferroelectric phase and paraelectric phase of BaTiO₃ can be obtained, respectively.     

Enhanced mangnetoelectric voltage in multiferroic particulate Ni0.83Co0.15Cu0.02Fe1.9O4−δ/PbZr0.52Ti0.48O3 composites – dielectric,piezoelectric and magnetic properties

Multiferroic particulate composites of Ni_0.83Co_0.15Cu_0.02Fe_1.9O_4−δ– NCCF and lead zirconate titanate (PZT) were prepared conventional ceramic method. The generic formulae x NCCF + (1−x) PZT where x = 0.1, 0.2, 0.3, 0.4, 0.5 and 0.6 mole fractions. The presence of two phases in multiferroic was confirmed with XRD technique. The dielectric constant and loss tangent were studied as a function of frequency (100 Hz to 1 M Hz) and temperature (30–500 °C). The piezoelectric coefficient d₃₃ were also studied on these particulate composites. The hysteresis behaviour was studied to understand the magnetic properties such as saturation magnetization (Ms) and magnetic moment (μ_B). The static magnetoelectric (ME) voltage coefficient was measured as a function of dc magnetic bias field. A high value of ME output (3151 mV/Oe.cm) was obtained in the composite containing 50% highly magnetostrictive ferrite component NCCF – 50% highly piezoelectric ferroelectric component PZT. These multiferroic particulate composites are used as phase shifters, magnetic sensors, cables etc.     

Dielectric relaxation and ac conductivity of double perovskite oxide Ho2ZnZrO6

Double perovskite oxide holmium zinc zirconate Ho₂ZnZrO₆ (HZZ) is synthesized by solid state reaction technique under a calcination temperature of 1100 °C. The crystal structure has been determined by powder X-ray diffraction, which shows monoclinic phase at room temperature. The variation of dielectric constant (ε′) and loss tangent (tan δ) with frequency is carried out assuming a distribution of relaxation times. The frequency corresponding to loss tangent peak is found to obey an Arrhenius law with activation energy of 89.7 meV. The frequency-dependant electrical data are analyzed in the framework of conductivity and electric modulus formalisms. Both these formalisms show qualitative similarities in relaxation times. The scaling behaviour of imaginary electric modulus shows the temperature-independent nature of the distribution of relaxation times. Nyquist plots are drawn to identify an equivalent circuit and to know the bulk and interface contributions.     

The special features of the frequency dependence of phononless hopping conduction

Within the framework of perturbation theory the imaginary part of the phononless conduction of a lightly doped compensated semiconductor is calculated. It is shown that when the basis of localized atomic-like functions is used, the superlinear frequency dependence of the real part of the conduction corresponds to the approximately linear frequency dependence of the imaginary part of the conductivity. It has been found that at frequencies below the transition (crossover) frequency ??_cr from the linear to quadratic frequency dependence of the real part of conductivity, the dielectric loss tangent depends weakly on the frequency and it is determined by the relationship of ???_cr to the width of the impurity band. It is shown that measurements of the dielectric loss tangent can provide information on the localization radius of impurity states.     

Effect of Mn-doping on the growth mechanism and electromagnetic properties of chrysanthemum-like ZnO nanowire clusters

Chrysanthemum-like ZnO nanowire clusters with different Mn-doping concentrations are prepared by a hydrothermal process. The microstructure, morphology and electromagnetic properties are characterized by x-ray diffractometer high-resolution transmission electron microscopy (HRTEM), a field emission environment scanning electron microscope (FEESEM) and a microwave vector network analyser respectively. The experimental results indicate that the as-prepared products are Mn-doped ZnO single crystalline with a hexagonal wurtzite structure, that the growth habit changes due to Mn-doping and that a good magnetic loss property is found in the Mn-doped ZnO products, and the average magnetic loss tangent tanδ_m is up to 0.170099 for 3% Mn-doping, while the dielectric loss tangent tanδ_e is weakened, owing to the fact that ions Mn^{2 +} enter the crystal lattice of ZnO.     

高压交流输电线路故障检修技术研究

对高压交流输电线路故障检修技术进行研究,可以提高电力质量,减少因线路故障产生的一系列人财有损情况的发生。当前方法将短期的输电线路检修当作单重不确定性的优化问题,对其进行建模以及求解。而在现场运行过程中,架空线路可靠性指标不能准确表达线路故障发生的可能性,其理论基础相对薄弱,仅考虑了单重不确定性的问题,无法对高压交流输电线路进行高精度地检修。为此,提出一种基于层次分析的高压交流输电线路故障检修方法。该方法先将高压交流输电线路故障划分为：单相接地故障、高压交流输电线路短路故障、高压交流输电线路导线断路故障。然后利用多个电流测量点,通过FFT程序对电流故障分量相位进行求解,根据比较相邻测点相位差判别故障区域,最后利用图论实现高压交流输电线路故障检修时间控制函数,以及线路故障检修经济控制目标函数的制定,与分类和定位结果结合完成高压交流输电线路故障的检修。实验结果证明,所提方法可以有效地对高压交流输电线路故障进行检修,具有一定的利用价值。     

Structure and Orientation of 1-Hydroxyl-5-Hexadecyloxy-Naphthalene LB Films Studied By UV-VIS and FTIR Spectroscopy

Ultraviolet-visible (UV-Vis), infrared transmission, and reflection absorption(RA) spectra have been measured for one-and multi-monolayer Langmuir-Blodgett(LB) films of C₁₆H₃₃30Naph(1,5)OH at various temperature to investigate dependencies of the aggregation and phase transitions on the number of monolayers. The UV-vis spectra of the LB films have revealed that the C₁₆H₃₃ONaph(1,5)OH forms aggregates in the LB film. From the temperature dependence of UV-vis absorption spectra, it is clear that the aggregate is gradual converted to monomer upto 80 °C. A comparison of the infrared transmission and RA spectra reveals that the hydrocarbon chains are tilted considerably in the LB film. As for the naphthalene ring part, the result suggest that the ring plane is oriented approximately perpendicular to the substrate surface. The Temperature dependence of infrared transmission spectra have been measured for 1-, 3-, and 11-monolayer LB films to investigate dependence of phase transitions on the number of monolayers. These observations show that the one-monolayer LB films does not have a clear order-disorder transition, while the three-and eleven-monolayer films have a phase transition near 60 °C. Therefore, it seems that the title angles of both the alkyl chain and chromophore part change largely concomitantly with the conversion from the aggregate to the monolayer.     

Magnetoresonance EMF in thin manganite films

The effect of magnetoresonance emf (MREMF) in thin epitaxial films of rare-earth manganites La_0.67Sr_0.33MnO₃ is detected and investigated. The effect is manifested in the occurrence of a constant voltage under the action of microwave pumping in magnetic fields corresponding to ferromagnetic resonance conditions. The MREMF signal includes symmetric and antisymmetric components and changes its polarity upon switching of the external magnetic field. The temperature dependence of the effect (including the range in the neighborhood of the phase transition) is analyzed. The experimental data including the shape of the signal and its dependence of the field orientation are in good agreement with the results obtained in the theoretical model based on the mechanism of anisotropic magnetoresistance. It is shown that the magnetoresistance anisotropy in the manganite under investigation is negative and sharply attenuates as the temperature approaches the Curie point, almost vanishing in the paramagnetic phase.     

Effect of Bi-substitution on the dielectric properties of polycrystalline yttrium iron garnet

The effect of Bi-substitution on the dielectric properties of yttrium iron garnet (YIG) was studied in this paper. The Bi-substituted YIG (YIG:Bi) polycrystalline samples, having composition of Y_3−xBi_xFe₅O₁₂, were prepared by the solid-state reaction method. x varied from 0 to 1.2. The phase formation and microstructure were performed by X-ray diffraction and scanning electron microscopy, respectively. Ions valency was identified by X-ray photoelectron spectroscopy. The impedance analyzers are used to measure the frequency dependence and the temperature dependence of relative dielectric constant (_r) and loss tangent (tan δ). The experimental results show that the Bi-substitution lowers the phase formation and sintering temperature. Electronic carrier concentration drops dramatically due to limitation of ferric valency variation. Hence, _r and tan δ decrease with addition of Bi. Dispersion characteristic indicates non-Debye-type dispersion. A maximum of _r appears as the temperature rises.     

AC conductivity and dielectric relaxation in Ba(Sm1/2Nb1/2)O3 ceramic

The complex perovskite oxide a barium samarium niobate (BSN) synthesized by solid-state reaction technique has single phase with cubic structure. The scanning electron micrograph of the sample shows the average grain size of BSN∼1.22 μm. The field dependence of dielectric response and loss tangent were measured in the temperature range from 323 to 463 K and in the frequency range from 50 Hz to 1 MHz. The complex plane impedance plots show the grain boundary contribution for higher value of dielectric constant in the low frequency region. An analysis of the dielectric constant (ε′) and loss tangent (tan δ) with frequency was performed assuming a distribution of relaxation times as confirmed by the scaling behaviour of electric modulus spectra. The low frequency dielectric dispersion corresponds to DC conductivity. The logarithmic angular frequency dependence of the loss peak is found to obey the Arrhenius law with an activation energy of 0.71 eV. The frequency dependence of electrical data is also analyzed in the framework of conductivity and electric modulus formalisms. Both these formalisms show qualitative similarities in relaxation times. The scaling behaviour of imaginary part of electric modulus M″ and dielectric loss spectra suggest that the relaxation describes the same mechanism at various temperatures in BSN. All the observations indicate the polydispersive relaxation in BSN.