Energy Structure of an Individual Mn Acceptor in GaAs : Mn

The energy structure of the Mn acceptor, which is a complex of Mn²⁺ ion plus valence band hole, is investigated in the external magnetic field and under presence of an uniaxial stress has been studied. The spin-flip Raman spectra are studied under resonant excitation of exciton bound to the Mn acceptor. The gfactors of the ground F = 1 and the first excited F = 2 states are determined and selection rules for the optical transitions between the acceptor states are described. The value of the random field (stress or electric field) acting on manganese acceptor and the deformation potential for the exchange interaction constant of the Mn²⁺ + hole complex are obtained. A theoretical model is developed that takes into account the influence of random internal and uniaxial external stress and magnetic field. The proposed model describes well the lines of spin-flip Raman scattering of Mn acceptor.     

费密子与Dirac双子系统的耦合问题

除了库仑耦合和Kazama-杨振宁耦合——кqβ∑·r/2Mr³外,本文同时讨论了费密子Dirac双子应当存在的另一耦合iкzz_de²γ·r/2Mr³。结果表明,对所有角动量态,费密子径向波函数具有物理上合理的原点渐近行为。定性地分析了束缚态的必要条件。发现,对于双子情形,当额外磁矩к→0时,存在费密子束缚态是可能的;但对于磁单极情形,当к→0时,必不存在费密子束缚态。 关键词：     

Valence band contributions to photoluminescence excitation spectra of tightly bound holes in zincblende semiconductors

Photoluminescence excitation (PLE) spectra of deep acceptor states in ZnSe, for example the Cu-related luminescence band at ≈1.95 eV, contain a prominent excitation band at ≈3.25 eV. This band lies above the structure marking the lowest direct E_O band gap E_g by the spin-orbit splitting energy Δ of the valence bands at Γ. The higher energy feature is either absent or greatly de-emphasised in the PLE spectra of shallow acceptor states in ZnSe and of the oxygen iso-electronic trap in ZnTe, where the electron rather than the hole is tightly bound. However, a significant PLE component at E_g + Δ is observed for deep acceptor-like states in ZnTe, where Δ is ≈0.95 eV. Efficient PLE at E + Δ for luminescence from deep acceptor-like states is shown to be consistent with the extended wave-vector contributions to the bound state wave-functions of holes of binding energies ≈Δ.     

Temperature dependence of the fine structure of the C and E absorption bands in RbMnF3 below the Néel temperature

The variation in the parameters (width, position, intensity) of the fine structure lines in the C[⁶ A _1g → ⁴ A _1g , ⁴ E _g(⁴ G)] and E[⁶ A _1g → ⁴ E _g(⁴ D)] bands in RbMnF₃ with temperature is studied in the temperature range 10–70 K. In the C band, two narrow (<6 cm^?1) lines are are distinguished at distances of 77 and 80 cm^?1 from the exciton line at T = 10 K. The other lines in the C band and all lines in the E band are more than 20 cm^?1 wide. It is demonstrated that the narrow lines become allowed because of the spin-exchange interaction within a long-range magnetic order model and originate from the excitation of exciton-magnon bound states and that the other lines are made allowed by the exchange-vibronic mechanism within a short-range magnetic order model and originate from the excitation of bound states composed of an exciton, magnon, and oddparity phonon. The vibrational replicas of the main exciton-magnon-phonon lines are due to the quadratic vibronic interaction with odd-parity vibrations. Variations of the intensities and widths of the absorption lines with temperature indicate that these parameters are affected by relaxation and delocalization of the bound states.     

Near infrared transitions between Rydberg states of nitric oxide: The 4f-F2Δ band at 1.71 μm

Several near infrared transitions between highly excited Rydberg (R) states of nitric oxide have been recorded at high resolution (0.15 cm^?1) with a SISAM interferometer. The spectra all show a simple rotational structure, characteristic of R-R transitions. A full analysis has been performed of the previously unobserved 4f(v = 0) → F²Δ(v = 0) band at 1.71 μm. The band shows a peculiar structure, characteristic of Hund's Case (d) behaviour for one of the states. The relative branch intensities are calculated from first principles, and the agreement with the observed spectrum is excellent. This work shows the potential of interferometers for studying excited electronic states of simple molecules at high resolution.     

Photoluminescence of Mn doped epitaxial GaAs

We have measured the near band edge photoluminescence of Mn doped liquid phase epitaxially grown GaAs. The photoluminescence spectra at 2°K shows, at low excitation intensities, a structure of up to eight sharp peaks (widths .2 to 1.0 meV) between 1.517 and 1.512 eV, besides the lower energy bands near 1.41 eV due to the deep Mn acceptor level and the usual donor-acceptor bands around 1.47 eV. Attempts to relate the sharp lines to the Mn electronic states, introduced by doping, were unsuccessful. It is our belief that the presence of this particular impurity in our samples allows for whatever states are responsible for the sharp line structure, to reveal themselves in the emission spectrum. A most unespected result is that near band edge sharp line luminescence is observed for impurity concentration as high as 10¹⁸cm^-3.     

Far-infrared magneto-absorption of donor-bound excitons in germanium: Pseudo-acceptor model

The magneto-oscillatory absorption spectrum of the arsenic-bound excitons in germanium observed at 118.6 μm reveals a series of absorption lines similar to the Zeeman spectrum of the acceptor impurity. This fact indicates that the bound excitons have the excited states associated with the light-hole Landau ladders and these excited states can be described by the model of a hole bound to the D^- state, i.e. the pseudo-acceptor model. The hole binding energy of the ground state of the bound excitons has been obtained to be 4.7 meV, which is smaller compared with the binding energy of the acceptor impurity.     

Ab initio potential energy curves for the CO+ ion and a study of the photoelectron spectra of CO

The potential energy curves for the low-lying electronic states of CO⁺ are calculated by using the ab initio full valence configuration interaction method with minimal STOs. Calculated spectroscopic parameters are given for twenty five bound states, and the compared with the experimental values for four observed bound states. The band systems, observed in the 22 eV and 27 eV region of He II photoelectron spectra of CO, are analysed by using calculated potential energy curves and spectral intensities. New assignment for the fourth band system at 22 eV ～ 23 eV is proposed.     

The nature of the predominant acceptors in high quality zinc telluride

We report very sharp bound exciton luminescence spectra in high quality melt-grown very lightly compensated ZnTe, p-type with N_A-N_D in the low 10⁺¹⁵ cm^-3. Bound exciton localisation energies at seven shallow neutral acceptors with E_A between ~55 and ~150 meV are very insensitive to E_A. Optical absorption and dye laser luminescence excitation spectroscopy were necessary to obtain a full separation of the transitions due to different acceptors, together with a study of certain ‘two-hole’ luminescence satellites in which the acceptor is left in a series of orbital states after bound exciton decay. Two shallow acceptors are P_Te and As_Te, a third possibly Li_Zn while a fourth, relatively prominent in our best undoped crystals, may be a complex. A deeper, 150 meV acceptor, frequently reported in the ZnTe literature and electrically dominant in most of our undoped crystals has the Zeeman character of a point defect. We present clear evidence from our spectra that this energy does not represent the binding of a single hole at a doubly ionized cation vacancy, a popular attribution since 1963. This acceptor may be covered by another impurity, possibly Cu_Zn. We also report bound phonon effects, lifetime broadening of excited bound exciton states and observe a single unidentified donor with E_D ~18.5 meV. This energy is determined using selective dye laser excitation at the weak neutral donor bound exciton line and from the onset of valence band to ionized donor photo-absorption.     

Excimer radiation from Na—Noble-gas and K—Noble-gas molecules

Emission bands from Na-noble-gas (and K-noble-gas) molecules, due to transitions between the 4sσ (and 5sσ) bound excited states and dissociating ground states, are observed. The noble gases used are Ar, Kr and Xe. The red shift of the emission band from the forbidden atomic s-s transition is largest for NaXe, for which it is 3055 cm^?1. This NaXe band may be useful as an excimer laser source, tunable from 4280 Å to 4500 Å.     

The electronic structures of the core and valence ion states of metal oxides

SCF-Xα SW MO calculations on metal core ion hole states and X-ray emission (XES) and X-ray photoelectron (XPS) transition states of the non- transition metal oxidic clusters MgO₆^10?, AlO₄^5? and SiO₄^4? show relative valence orbital energies to be virtually unaffected by the creation of valence orbital or metal core orbital holes. Accordingly, valence orbital energies derived from XPS and XES are directly comparable and may be correlated to generate empirical MO diagrams. In addition, charge relaxation about the metal core hole is small and valence orbital compositions are little changed in the core hole state. On the other hand, for the transition metal oxidic clusters FeO₆^10?, CrO₆^9? and TiO₆^8? relative valence orbital energies are sharply changed by a metal core orbital or crystal field orbital hole, the energy lowering of an orbital increasing with its degree of metal character. Consequently O 2p nonbonding → M 3d-O 2p antibonding (crystal field) energies are reduced, while M 3d bonding → O 2p nonbonding and M 3d-O 2p antibonding → M 4s,p-O 2p antibonding (conduction band) energies increase. Charge relaxation about the core hole is virtually complete in the transition metal oxides and substantial changes are observed in the composition of those valence orbitals with appreciable M 3d character. This change in composition is greater for e _g than for t_2g orbitals and increases as the separation of the e_g crystal field (CF) orbitals and the O 2p nonbonding orbital set decreases. Based on the hole state MO diagrams the higher energy XPS satellite in TiO₂ (at about 13 eV) is assigned to a valence → conduction band transition. The UV PES satellites at 8.2 eV in Cr₂O₃ and 9.3 eV in FeO are tentatively assigned to similar transitions to conduction band orbitals, although the closeness in energy of the crystal field and O 2p nonbonding orbitals in the valence orbital hole state prevents a definite assignment on energy criteria alone. However the calculations do clearly show that charge transfer transitions of the e_g bonding → e_g crystal field orbital type would generally occur at lower energy than is consistent with observed satellite structure.A core electron hole has little effect upon relative orbital energies and is only slightly neutralized by valence electron redistribution for MgO and SiO₂. For the transition metal oxides a core hole lowers the relative energies of M3d containing orbitals by large amounts, reducing O → M charge transfer and increasing M 3d crystal field → conduction band energies. Large and sometimes overcomplete neutralization of the core hole is observed, increasing from CrO₆^9? to FeO₆^10? to TiO₆^8?. as the O → M charge transfer energy declines.High energy XPS satellites in TiO₂ may be assigned to O 2p nonbonding → conduction band transitions while lower energy UV PES satellites in FeO and Cr₂O₃ arise from crystal field or O 2p nonbonding → conduction band excitations. Our “shake-up” assignment for FeO₆^10?, CrO₆^9? and TiO₆^8? are less than definitive because no procedure has yet been developed to calculate “shake-up” intensities resulting from transitions of the type described. However the results do allow a critical evaluation of earlier qualitative predictions of core and valence hole effects. First, we find that the comparison of hole or valence state ionic systems with equilibrium distance systems of higher nuclear and/or cation charge (e.g. the comparison of the FeO₆^10? Fe 2p core hole state to Co₃O₄) is dangerous. For example, larger MO distances in the ion states substantially reduce crystal field splittings. Second, core and CF orbital holes sharply reduce O → M charge transfer energies, giving 2e_g → 3e_g energy separations which are generally too small to match observed satellite energies. Third, highest occupied CF-conduction band energies are only about 4–5 eV in the ground states, but increase to about 7–11 eV in the core and valence hole states of the transition metal oxides studied. The energetic arguments presented thus support the idea of CF and/or O 2p nonbonding → conduction band excitations as assignments for “shake-up” satellites, at least in oxides of metals near the beginning of the transition series.     

Molecule formation and energy transfer processes in a vapor with high density of 3P-excited sodium atoms

A rich fluorescence spectrum extending between 4000 and 8200 Å has been observed whenever sodium vapor is excited by dye laser light tuned to the 3²S → 3²P transition. Molecule formation due to collisions between excited and unexcited atoms is manifested by the presence of an emission band of sodium in the spectral range 4160–4570 Å.     

Mott Transition in GdMnO<Subscript>3</Subscript>: an Ab Initio Study

Orthorhombic GdMnO₃ is studied using density functional theory considering the pseudo-potential plane-wave method within local-spin-density approximation, LSDA. The electronic band structure and density of states, for several hydrostatic pressures, are studied. The Mott transition was observed at 60 GPa. Calculated lattice parameters are close to the experimental measurements, and some indirect band gaps (S→Γ) were obtained within the LSDA level of calculation, between the occupied O-2p and unoccupied Gd-4f states. The variation of the gap reduces with increasing pressure, being well fitted to a quadratic function.     

Magneto-Luminescence of excitons bound to neutral acceptor in cadmium telluride

The radiative recombination of excitons bound to neutral acceptor (A⁰, X) in high-purity CdTe has been investigated in magnetic fields up to 100 KG. A doublet structure observed in (A⁰, X) emission line is explained by considering the j-j coupling between two holes and an electron. Zeeman splittings in emission lines originate from the transition between J = 1/2 and 3/2 states in bound-exciton complex, and the acceptor-ground state. It is supposed that the acceptor which binds excitons is due to certain complex having C_3υ symmetry which is lower than the host lattice.     

Negative FIR-photoconductivity in n-GaAs

Negative photoconductivity in n-GaAs has been observed in the far infrared spectral range between 20 and 29 cm^–1. Negative photoconductivity occurs when a magnetic field is applied to the samples and impact ionization of shallow donors by the electric bias field is the dominant mechanism of electron excitation to the conduction band. A conceivable model qualitatively explaining the experimental results is proposed, which involves optical transitions from the lowest Landau subband to higher bound states of shallow donors.     

Local electronic structure near Mn acceptors in InAs: surface-induced symmetry breaking and coupling to host states

We present low-temperature scanning tunneling spectroscopy measurements on Mn acceptors in InAs in comparison with tight-binding calculations. We find a strong (001)-mirror asymmetry of the bound hole wave function close to the (110) surface. In addition, multiple acceptor-related peaks are observed and are attributed to a spin-orbit splitting of the acceptor level. Because of the p-d exchange interaction the local density of states near the acceptors is enhanced in the valence band and suppressed in the conduction band. We also observe signs of anisotropic scattering of the conduction band states by neutral acceptors.     

The structure of 32S II. Shell model interpretation

The properties of positive-parity states in ³²S are compared to predictions of shell model calculations within the complete s-d basis space using the universal s-d shell Hamiltonian. The experimental T = O spectrum is reproduced to excitation energies between 10 and 11.7 MeV, depending on the level spins. The T = 1 spectrum is known and reproduced for the first five 5 MeV in excitation in general and for the first 8 MeV in the case of I^π = 1⁺ states. Altogether the excitation energies of 80 positive-parity states are reproduced with a rms deviation of 200 keV. A calculation of radiative widths and branching ratios for γ-decay which uses effective charges and free-nucleon g-factors yields good general agreement with experiment. The need for effective g-factors is felt only in the rare cases of transitions which are governed by the isovector d_3/2 → d_5/2 M1 matrix element. The spectrum of negative parity, T = 1 states is understood in terms of the weak-coupling model while that of the T = 0 states is comprised of octupole-quadrupole phonon multiplets. Positive-parity states from outside the s-d configuration are first observed between 9.5 and 10.5 MeV excitation energy.     

Measurement of the mean lifetimes of low spin states in the superdeformed band in133Nd

The mean lifetimes of the lower spin states of the superdeformed band in¹³³Nd have been measured with the coincidence recoil distance method. The reaction used to populate the band was¹⁰⁵Pd (³²S, 2p2n)¹³³Nd at a beam energy of 152 MeV, and the gamma-rays were detected with the POLYTESSA array. The differential decay curve method was used to analyse the data and transition quadrupole moments,Q ₀, were extracted from the measured lifetimes. The results obtained from the three lowest transitions in the superdeformed band are:Q ₀=6.3±0.9 eb (21+/2→17+/2),Q ₀=6.7±1.1 eb (25+/2→21+/2) andQ ₀>5.0 eb (29+/2→25+/2). These results are consistent with previous results for the high spin members of the band, and are compared to theoretical calculations of total routhian surfaces. The calculation of reduced transition probabilities for the transitions that feed out of the band, allows the effect of hindrance due to K-forbiddenness to be investigated.     

Excitation of lowest electronic states of thymine by slow electrons

Excitation of lowest electronic states of the thymine molecules in the gas phase is studied by elec- tron energy loss spectroscopy. In addition to dipole-allowed transitions to singlet states, transitions to the lowest triplet states were observed. The low-energy features of the spectrum at 3.66 and 4.61 eV are identified with the excitation of the first triplet states 1₃ A′ (π → π*) and 1₃ A″ (n → π*). The higher-lying features at 4.96, 5.75, 6.17, and 7.35 eV are assigned mainly to the excitation of the π → π* transitions to the singlet states of the molecule. The excitation dynamics of the lowest states is studied. It is found that the first triplet state 1³ A′(π → π*) is most efficiently excited at a residual energy close to zero, while the singlet 2₁ A′(π → π*) state is excited with almost identical efficiency at different residual energies.     

Resonant Raman studies of bound excitons in CdS

A new electronic resonant Raman effect in CdS is reported. Resonance enhancement at the I₁ and I₂ bound excitons is observed in differently doped (Cl, J, Li) samples. The energy, intensity dependency and Zeeman splitting suggest an electronic Raman effect associated with excited states of acceptor and donor bound excitons.