Negative FIR-photoconductivity in n-GaAs |
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Authors: | W Heisel W Bohm and W Prettl |
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Institution: | (1) Institut für Angewandte Physik, Universität Regensburg, 8400 Regensburg, W-Germany |
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Abstract: | Negative photoconductivity in n-GaAs has been observed in the far infrared spectral range between 20 and 29 cm–1. Negative photoconductivity occurs when a magnetic field is applied to the samples and impact ionization of shallow donors by the electric bias field is the dominant mechanism of electron excitation to the conduction band. A conceivable model qualitatively explaining the experimental results is proposed, which involves optical transitions from the lowest Landau subband to higher bound states of shallow donors. |
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Keywords: | semiconductors epitaxial GaAs far-infrared magnetospectroscopy impact inonization photoconductivity |
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