半导体纳米材料和物理

半导体纳米材料是纳米材料的一个重要组成部分，纳米结构的电子和光子器件将成为下一代微电子和光电子器件的核心。文章介绍了半导体纳米材料研究的新进展，包括四个方面：半导体自组织生长量子点，纳米晶体，微腔光子晶体和纳米结构中的自旋电子学。本世纪开始的半导体纳米材料的研究是上世纪半导体超晶格量子阱研究的延续，同时又开辟了一些新的领域，如：单电子的电子学、单光子的光子学，微腔和光子晶体，稀磁半导体和自旋电子的相干输运等，这些研究将为研制在新原理基础上的新器件和实现量子计算、量子通信打下基础。     

半导体纳米结构物理性质的理论研究--2004年国家自然科学二等奖获奖项目介绍

半导体纳米结构是纳米材料的一个重要组成部分,纳米结构的电子和光子器件将成为下一代微电子和光电子器件的核心.半导体纳米结构有多种多样,如自组织量子点、纳米晶体、硅团簇、量子结构等,它们可以制成各种纳米电子学器件.根据以上几类半导体纳米结构,文章介绍的获奖项目提出了研究半导体纳米结构电子结构的四个理论,并利用这些理论研究了它们的电子态和物理性质,发现了许多新的效应.这些理论包括：一维量子波导理论、孤立量子线、量子点的有效质量理论、异质结构的空穴有效质量理论、经验赝势同质结模型.专著〈半导体超晶格物理〉全面系统地介绍了超晶格物理的概念、原理、理论和实验结果,主要总结了获奖项目参加者所在的研究组在超晶格物理研究方面所取得的成果.     

半导体超晶格国家重点实验室诚聘英才

正中国科学院半导体研究所半导体超晶格国家重点实验室长期以来主要致力于半导体物理的电子/自旋量子调控及光、电器件方面的研究,研究内容涉及从基础理论、材料生长、微纳器件的基本物理/功能特性到半导体光电器件的实用基础研究。当前科研人员中包括4位中国科学院院士、9人获得国家杰出青年基金资助、3人获选优秀青年科学基金资助。为进一步增强研究室的原始创新能力,现诚聘海内外英才加盟。一、招聘岗位诚邀从事半导体中的新奇量子现象、自旋电子学、新功能的半导体器件与芯片、新型纳米材料物性与器件效应     

化学热器—一种优异的制备纳米材料的方法（Ⅰ）

纳米材料是纳米技术的重要组成部分,化学热解是制备纳米材料的一种重要方法,它的特点是,操作简单,产品洁净,用途广泛,文章用对化学热解法制备的各种不同类型的纳米微晶材料（如金属、单质半导体、化合物半导体、复合氧化物、陶瓷体系等）及应用特点进行了总结分析,并介绍了一些新进展（如在介孔体系中的内延生长）,这对开展纳米材料的研究工作者和学生会有帮助。     

半导体纳米材料

介绍了半导体纳米材料的研究进展、物理特性和应用前景。     

半导体超晶格国家重点实验室诚聘英才

正中国科学院半导体研究所半导体超晶格国家重点实验室长期以来主要致力于半导体物理的电子/自旋量子调控及光、电器件方面的研究,研究内容涉及从基础理论、材料生长、微纳器件的基本物理/功能特性到半导体光电器件的实用基础研究。当前科研人员中包括3位中国科学院院士、9人获得国家杰出青年基金资助、12人获得中国科学院"百人计划"支持、3人获选中组部"青年千人"计划。为进一步增强研究室的原始创新能力,现诚聘英才加盟。(一)招聘岗位诚邀从事半导体中的新奇量子现象、自旋电子学、新功能的半导体器件与芯片、新型纳米材料物性与器     

半导体超晶格国家重点实验室诚聘英才

正中国科学院半导体研究所半导体超晶格国家重点实验室长期以来主要致力于半导体物理的电子/自旋量子调控及光、电器件方面的研究,研究内容涉及从基础理论、材料生长、微纳器件的基本物理/功能特性到半导体光电器件的实用基础研究。当前科研人员中包括4位中国科学院院士、9人获得国家杰出青年基金资助、3人获选优秀青年科学基金资助。为进一步增强研究室的原始创新能力,现诚聘海内外英才加盟。一、招聘岗位诚邀从事半导体中的新奇量子现象、自旋电子学、新功能的半导体器件与芯片、新型纳米材料物性与器件效应方面的科学研究,特别是开展器件物理方面研究工作的帅才及将才加盟。     

基于碳纳米薄膜/砷化镓范德华异质结的高性能自驱动光电探测器研究

基于碳纳米材料/体半导体范德华(vdW)异质结的光电器件可以同时实现碳纳米材料的超高载流子迁移率以及体半导体的优异光电性能,且具有结构简单、工艺简便、易于调控界面等优点.尤其是通过调控单壁碳纳米管(SWCNT)的直径/手性、费米能级等可以与体半导体形成能带匹配、具有原子级界面的新型混合维度vdW异质结.本文报道了一种基...     

CdTe QDs/Au NRs的SERS及光诱导电荷转移研究

控制和利用半导体基底的荧光背景是解决半导体纳米材料应用在表面增强拉曼(SERS)领域的关键问题。该研究通过将具有高荧光背景的碲化镉量子点(CdTe QDs)与贵金属金纳米棒(Au NRs)纳米材料复合,依赖于光激发下CdTe QDs与Au NRs之间的电荷转移,获得了兼具多功能特性(例如表面增强拉曼散射和光催化)的纳米复合材料。在该研究中,将染料分子亚甲基蓝(MB)作为探针分子,CdTe QDs/Au NRs纳米复合材料的之间的电荷转移降低了CdTe QDs的荧光背景,展现出良好的SERS增强性能。     

分散有ZnS:Mn2+纳米超微粒的有机薄膜的制备和光学性质

近年来,半导体超微粒的合成及光物理性质研究已成为活跃的领域.由于量子尺寸效应引起的量子点能级结构的变化及其光学性质已经作了大量研究[1-4].1993年,Bhar-gava首次报导了化学反应合成的ZnS Mn超微粒的光学性质[5],掺杂半导体纳米材料的出现,为纳米科学的研究开辟了新的领域.     

有源光纤环等效时间脉冲复制研究

对利用半导体光放大器有源光纤环为光等效时间采样提供低失真脉冲序列的方法进行了研究。分析了提高复制精度的辅助直流光非线性增益抑制方法,并给出基于递推方式,可进一步提高采样精度的后处理算法。通过实验验证了辅助直流光注入对复制器非线性增益的抑制作用;以及在不充分辅助直流光注入条件下,利用后处理算法抑制非线性误差的效果。结果显示利用半导体光放大器有源光纤环结合后处理算法可以有效地为光等效时间采样提供特性一致、误差可处理的时序脉冲序列。     

Parameter optimization of microcantilevers optically excited by a semiconductor laser with optical feedback

A novel approach of optically exciting and detecting the vibration of a microcantilever by a sinusoidally driven semiconductor laser subject to optical feedback is proposed. A theoretical model for the approach is established, and the working parameters are optimized. In our experiments, an Al-coated microcantilever is designed with the optimized working parameters, and the microcantilever is optically excited by a sinusoidally driven semiconductor laser. We have demonstrated that there exist periodic dips of the optical power of the semiconductor laser, which is caused by the resonant vibration of the microcantilever. The optical power of the semiconductor laser is also analyzed theoretically by using the Lang–Kobayashi (L–K) equations. The experimental result is consistent with the result of theoretical analysis.     

The electrical properties of semiconductor/metal,semiconductor/liquid,and semiconductor/conducting polymer contacts

Critical comparisons are drawn between the basic electrical properties of semiconductor/metal, semiconductor/liquid, and semiconductor/conducting polymer junctions. A theoretical model is developed to describe the basic current-voltage properties of semiconductor contacts, with emphasis on the contrasts between ideal and observed behavior. Using the concepts from this model, the characteristics of a variety of semiconductor contacts are evaluated. The discussion focuses on the following semiconductors: Si, GaAs, InP, and II-VI compounds based on the Cd-(chalcogenide) materials.     

Fully analytical evaluation of optical gain coefficient in bulk semiconductors in quasi-equilibrium free-carrier approximation

In this letter, a new analytical method is presented to calculate of the semiconductor optical gain coefficient. This method is particularly suitable for theoretical analyses to determine the dependence of semiconductor gain on the total carrier density and temperature in the semiconductor lasers. Also, the optical gain functions for semiconductor optical gain coefficient are presented analytically. The analytical evaluation is verified with numerical methods, which illustrates the accuracy of these obtained analytical expressions.     

Submillimeter Reflection Spectroscopy of Narrow-Band Semiconductors

The information possibilities of the submillimeter reflection spectroscopy of semiconductors and semiconductor structures are discussed. Models are presented to describe the reflection spectra of semiconductors and semiconductor structures. The possibility of obtaining information on various parameters and characteristics of semiconductors and semiconductor structures by fitting theoretical spectra to experimental data is shown. An evaluation of the validity and accuracy of the information obtained is given.     

Theoretical investigation of chirped mirrors in semiconductor lasers

This paper reports a theoretical design of chirped mirrors in 1.3-μm double-section semiconductor lasers to achieve high reflectivity and dispersion compensation over a broad bandwidth. Analytic expressions for reflectivity, group delay and group delay dispersion are derived. We use for the first time chirped air/semiconductor layer pairs as mirrors for higher-order dispersion compensation in semiconductor lasers. Our optimised calculations demonstrate that the broad-band mirrors designed consist of a total of only 12 air/semiconductor layers and achieve a reflectivity higher than 99.8%, a smooth group delay and almost stable dispersion in the laser cavity over a 100-nm bandwidth. Due to a high index contrast of both types of the layers, n _l = 1, n _h~ 3.5, a high-reflectivity bandwidth of > 700 nm is obtained in 1.3-μm semiconductor lasers. We also compare our results with that of a commercial simulation program and show a good agreement between them. As a conclusion, we assume from the theoretical results that air/semiconductor layer pairs with varying thicknesses used at one end of double-section semiconductor lasers can lead to femtosecond optical pulse generation using mode-locking techniques. An erratum to this article can be found at .     

Signal synchronous transmission of current-modulated semiconductor laser under bounded noise

The synchronous transmission problem of chaotic signal between current-modulated semiconductor lasers is investigated using variable coupling method. The theoretical analysis about characteristics of current-modulated semiconductor lasers is derived. According to Lyapunov theory, the condition which can realize synchronous transmission between semiconductor lasers is derived through determining maximum Lyapunov exponent of the coupling system. Further study the synchronization performance between semiconductor lasers under the influence of bounded noise, the results show that it has a strong anti-interference ability.     

半导体瞬态问题计算方法的新进展

综述三维热传导型半导体瞬态问题计算方法的新进展.数学模型是一类由四个方程组成的非线性耦合对流-扩散偏微分方程组的初边值问题.重点研究特征分数步差分方法,修正迎风分数步差分方法,特征交替方向变网格有限元方法,区域分裂及并行计算.     

快速与慢速饱和吸收体被动锁模掺铒光纤激光器的理论分析

利用半导体饱和吸收波导作为慢速饱和吸收体与非线性快速饱和吸收体相结合，建立了共同被动锁模掺铒光纤激光器的理论模型-分析了半导体饱和吸收波导、光纤自相位调制和自振幅调制对锁模脉冲宽度和脉冲啁啾的影响- 关键词：     

Hydrogen at semiconductor grain boundaries and interfaces

This paper is a review of the known effects of hydrogen in crystalline semiconductor grain-boundaries and interfaces and of the recent progress in the fundamental study of the mechanisms of hydrogen-interfaces interactions. The interfaces considered are: grain boundaries of polycrystalline semiconductors, semiconductor/semiconductor or semiconductor/metal interfaces, silicon/silicon oxide interfaces (including precipitated silicon oxide interfaces), and semiconductor/electrolyte interfaces. The influence of structural and electronic defects on the hydrogen passivation processes is discussed. Emphasis is laid upon the role of segregated impurities on the electrical activity of interfaces and its subsequent passivation by hydrogen. Some ideas are given for development of experimental and theoretical research to improve the understanding of the mechanisms of hydrogen action.