NH4H2PO4和ND4D2PO4晶体微结构的拉曼光谱研究

本文利用偏振拉曼光谱和第一性原理, 对磷酸二氢铵(NH₄H₂PO₄, ADP)和不同氘含量磷酸二氢铵DADP晶体的晶格振动模式进行了研究. 实验测得了不同几何配置、200–4000 cm^-1范围的偏振拉曼光谱, 分析在不同氘含量条件下921 cm^-1和3000 cm^-1附近拉曼峰的变化. 在ADP晶体中, 基于基本结构单元NH₄⁺ 和H₂PO₄^-基团的振动模, 用第一性原理进行了数值模拟, 进一步明确拉曼峰与晶体中原子振动的对应关系; 通过洛伦兹拟合不同氘含量DADP晶体的拉曼光谱中2000–2600 cm^-1处各峰的变化讨论了DADP 晶体的氘化过程, 结果表明氘化顺序是先NH₄⁺ 基团后H₂PO₄^-基团, 研究结果为今后此类材料的生长和性能优化奠定了基础.     

Reversible H2 passivation of Si ≡ Si3 interface defects in (1 1 1)Si/SiO2

K-band electron spin resonance (ESR) at 4.3 K has revealed the dipole-dipole (DD) interaction effects between [1 1 1]P_b centers (^*Si ≡ Si₃ defects with unpaired sp³ hybrid [1 1 1]) at the 2 dimensional (1 1 1)Si/SiO₂ interface. This has been enabled by the perfectly reversible H₂ passivation of P_b, which affects the defect's spin state. Sequential hydrogenation at 253–353°C and degassing treatments in high vacuum at 743–835°C allowed to vary the P_b density in the range 5 × 10¹⁰ < [P_b] (1.14 ± 0.06) × 10¹³ cm^-2. With increasing [P_b] fine structure doublets are clearly resolved. It is found that (1 1 1)Si/SiO₂ interfaces, dry thermally grown at ≈920°C, naturally comprise a ^*Si ≡ Si₃ defect density — passivated or not — of 1.14 × 10¹³ cm^-2.     

Raman spectra of YBa2Cu3Ox (x=6−7)

Raman spectra of polycrystalline YBa₂Cu₃O_x with various oxygen content x were recorded at 30 K. The intensity of the Cu-O stretching mode at 505 cm^-1 depends on the oxygen content significantly. This peak becomes weak as the oxygen content decreases and finally disappears at x=6.05. The last result disagrees with previous Raman studies on the tetragonal phase. Other spectral changes, disappearance of the 115 cm^-1 peak and shifts of some peaks, are observed at the oxygen content of ≈6.8.     

Electrical conductivity and defect structure of Mg-doped Cr2O3

The electrical conductivity of Cr₂O₃ nominally doped with 2 mol% MgO has been studied by the four point a.c. technique as a function of the oxygen activity (O₂ + Ar, CO + CO₂ and H₂ + H₂O) in the temperature range 400–1200 °C. It is concluded that Cr₂O₃ doped with MgO is an extrinsic conductor and that the dissolved Mg-dopant is compensated by the formation of electron holes at near atmospheric oxygen pressures and by oxygen vacancies (or possibly interstitial chromium ions) at highly reduced oxygen activities (in CO + CO₂ and H₂ + H₂O gas mixtures). In H₂ + H₂O mixtures Mg-doped chromia also dissolves hydrogen as protons and significantly affects the defect structure and electrical conductivity. The defect structure of the oxide under various conditions is discussed.     

Bi2ZnOB2O6单晶偏振拉曼光谱

本文通过分析不同几何配置下的偏振拉曼光谱对非线性光学晶体的晶格振动模式进行了研究. 首先根据因子群分析,将晶体的振动模按晶体对称群的不可约表示进行分类,其次测量了晶体在10–1600 cm^-1范围内,不同几何配置下的偏振拉曼光谱,并在此基础上指认了晶体的晶格振动模式. 300 cm^-1以下的振动峰,归结为晶体的外振动,来自[BiO₆],[ZnO₄],[BO₄]和[BO₃]原子基团的平动和转动;300cm^-1以上为晶体的内振动,主要与Bi-O,和Zn-O键振动有关. 晶体拉曼光谱中最高振动频率达到1407 cm^-1,被指认为[BO₃]三角形中B-O键的伸缩振动,体现了[BO₃]基团中高的电子非局域化程度. 关键词： 2ZnOB₂O₆单晶')" href="#">Bi₂ZnOB₂O₆单晶 偏振拉曼光谱 振动模式     

一种简单的化学气相沉积法制备大尺寸单层二硫化钼

最近单层二硫化钼以其直接带隙的性质及在电子器件、催化、光电等领域中的潜在应用而备受关注.化学气相沉积法能够制备出高质量、大尺寸且性能优良的单层二硫化钼,但其制备工艺比较复杂.本文采用简化的化学气相沉积法在蓝宝石衬底上制备出了大尺寸的单晶二硫化钼.清洗衬底时,只需要简单的清洁,不需要用丙酮、食人鱼溶液(H_2SO_4/H_2O_2=3:1)等处理,这样既减少了操作步骤,又避免了潜在的危险.升温时直接从室温加热到生长的温度,不必分段升温,并且采用常压化学气相沉积法,不需要抽真空等过程,使得实验可以快捷方便地进行.光学显微镜、拉曼光谱和光致发光谱的结果表明,生长的二硫化钼为规则的三角形单层,边长为50μm左右,远大于机械剥离的样品.     

Use of pulsed D2O laser for far-infrared EPR spectroscopy of DyPO4

EPR has been performed at 4.2°K on Dy³⁺ in DyPO₄ at 58.25 cm^-1, yielding g = 19.55 ± 0.16. The linearity of the Zeeman splitting indicates no perturbation from other levels, and in particular, that there are no levels between 58.25 cm^-1 and 23.0 cm^-1.     

Heat-treatment studies of molybdenum oxide-monohydrate

The dehydration of molybdic acid, MoO₃---H₂O, was studied by thermal analysis, X-ray diffractometry and FTIR spectroscopy. The results show that an intermediate phase, MoO₃-2/3H₂O is formed at 216 °C and the monoclinic form of MoO₃ is grown above 350 °C. The mechanism of dehydration and structural rearrangement were confirmed by the features of the infrared spectra showing formation of corner-shared MoO₆ octahedra.     

High resolution cw cars spectroscopy of the q-branch of the ν2 band in C2H2

The fully resolved spectrum of the Q-branch of the ν₂ band in acetylene has been obtained by cw CARS spectroscopy with a resolution of 40 MHz. The dispersion of χ⁽³⁾ and the linewidth of this Raman mode were investigated over the pressure range 0.05–5 atm. The constant of rotational-vibrational coupling was measured to be £ = (5.91 ± 0.05) × 10^-3 cm^-1.     

Synthesis and characterization of the Aurivillius phases Bi2 − xPbxSr1 − xNdxNb2O9

The n = 2 Aurivillius phase Bi_{2 − x}Pb_xSr_{1 − x}Nd₂O₉ was successfully synthesized as a ceramic material over the whole range of simultaneous, charge compensated substitution x = 0–1.0. Structural investigations were performed by Rietveld refinement applying different space groups Fmmm and A2₁am, and additionally by X-ray absorption spectroscopy (EXAFS) on the Nd L_III-edge, confirming the accommodation of Nd on the atomic sites of Sr, which implies the substitution of Bi³⁺ by the isoelectronic Pb²⁺. The ferroelectric transition temperature T_c = 270 °C of the substituted powders with x = 0.4 and 1.0 is distinctly reduced compared to the unsubstituted sample with T_c = 450 °C. In temperature resolved powder X-ray diffraction patterns no structural phase transition could be detected.     

Substrate temperature dependence of the photoluminescence efficiency of co-sputtered Si/SiO2 layers

Si particles embedded in an SiO₂ matrix were obtained by co-sputtering of Si and SiO₂ at various deposition temperatures T_d (200–700°C) and annealing at different temperatures T_a (900–1100°C). The systems were characterized by X-ray photoelectron, Raman scattering, infrared absorption and photoluminescence spectroscopy techniques. The results show that the photoluminescence efficiency is strongly dependent on the degree of phase separation between the Si nanocrystals and the SiO₂ matrix. This is likely connected with the Si/SiO₂ interface characteristics, together with the features indicating the involvement of quantum confinement.     

Densification and conductivity enhancement of Na4Zr2Si3O12-based solid electrolytes using TiO2 as a sintering aid

Densification of Na₄Zr₂Si₃O₁₂ (NZS) solid electrolytes was performed by dispersing TiO₂ (0.8–5.9 wt. %, corresponding to 5–30 mol %) in NZS powders prior to sintering at 1200°C. Increases in pellet density, from ca. 65 to 94% of the theoretical (X-ray density) value, and in electrical conductivity from 10⁻⁷ to 10⁻⁶ S/cm at 50°C were observed for small additions of TiO₂, which acts as a sintering aid. AC impedance spectroscopy reveals that the enhancement is not a bulk effect but instead is associated with a reduction in inter-granular constriction resistances within porous NZS ceramics. The presence of adsorbed water species in NZS powders prepared via a sol-gel route is found to have a dramatic effect on the conductivity enhancement.     

The phase transition and optimal synthesis temperature of LiNiO2

The phase transition of LiNiO₂ has been studied by using impedance spectroscopy, DTA, and X-ray diffraction methods. At 720°C the hexagonal phase changes in air to the cubic phase. The phase transition process is rather slow and partially reversible. A peculiar conductivity behavior was observed. From 324°C the conductivity deviates from Arrhenius behavior and is temperature-invariant until 613°C. Subsequently, it decreases rapidly with increase of the temperature. This phenomenon is related to the occupation of Ni²⁺ in Li⁺ positions. The optimal sintering temperature for LiNiO₂ is suggested to be 700°C.     

Transport properties of SrCe0.95Y0.05O3−δ and its application for hydrogen separation

Transport properties of SrCe_0.95Y_0.05O_3−δ were studied by impedance spectroscopy and by measuring open-cell voltage (OCV) and gas permeation. Ionic transference numbers were determined by measuring the OCV of concentration cells and water vapor evolution of an O₂/H₂ fuel cell. We observed interfacial polarization on the basis of the I–V curves obtained by discharging a hydrogen concentration cell or an O₂/H₂ fuel cell. The observed high protonic conductivity (high proton and low oxide ion transference numbers) makes SrCe_0.95Y_0.05O_3−δ a potential material for hydrogen separation. From proton conductivity measurements, under a given hydrogen partial pressure difference of 4%/0.488%, the hydrogen permeation rate (of a dense membrane with 0.11 cm in thickness) was calculated to be ≈0.072 cm³ (STP) cm⁻² min⁻¹ at 800°C, whereas the permeation rate calculated from short-circuit current measurements was ≈0.023 cm³ (STP) cm⁻² min⁻¹ at 800°C. The difference between calculated and observed permeation rates is probably due to interfacial polarization.     

The effect of annealing under hydrostatic pressure on the visible photoluminescence from si-ion implanted SiO2 films

We have studied the influence of the hydrostatic pressure during annealing on the intensity of the visible photoluminescence (PL) from thermally grown SiO₂ films irradiated with Si⁺ ions. Post-implantation anneals have been carried out in an Ar ambient at temperatures T_a of 400°C and 450°C for 10 h and 1130°C for 5 h at hydrostatic pressures of 1 bar–15 kbar. It has been found that the intensity of the 360, 460 and 600 nm PL peaks increases with rising hydrostatic pressure during low-temperature annealing. The intensity of the short-wavelength PL under conditions of hydrostatic pressure continues to rise even at T_a=1130°C. Increasing T_a leads to a shift in the PL spectra towards the ultraviolet range. The results obtained have been interpreted in terms of enhanced, pressure-mediated formation of ≡Si–Si≡ centres and small Si clusters within metastable regions of the ion-implanted SiO₂.     

Phase diagram of SrSi2 to 40 kbar and 1200°C

The pressure-temperature phase diagram of dimorphic SrSi₂ was investigated in the pressure range 10–40 kbar and temperature range 600–1200°C in a belt-type apparatus. The phase boundary between cubic SrSi₂I (SrSi₂-type) and tetragonal SrSi₂II (-ThSi₂-type) was studied by X-ray techniques in quenched samples. The curvature of the equilibrium line was not resolved. Molar volumes of both polymorphs have been measured in the temperature range 20–400°C at ambient pressure. From the slope of the equilibrium line in the pressure-temperature diagram and the change in molar volume, approximate values of the entropy and heat of transition SrSi₂(I–II) have been calculated.

In the silicon sublattice of both polymorphs of SrSi₂ the topologically simplest three-dimensional three-connected nets are found to be slightly distorted from their ideal configurations. The ideal SrSi₂-type net represents the three-connected analogy to the four-connected diamond net.     

A new procedure for the preparation of Tl2Ba2CaCu2O8-δ characterization by neutron diffraction, electron diffraction and HREM

A new procedure for the preparation of Tl₂Ba₂CaCu₂O_8-δ is presented. In the first step stoichiometric amounts of Cu(NO₃)₂·3H₂O, Ba(OH)₂·H₂O, CaO and Tl₂O₃ are reacted in a closed alumina crucible at 760°C to form a mixture of Tl- 2212, CuO, CaO and other oxide phases. In the second step this material is milled, pelletized and fired in a gold-sealed alumina crucible at 860–900°C for three to eight hours. Three batches of Tl-2212 prepared by this method were investigated showing less than 1% loss of thallium while T_c was close to 110 K. Rietveld refinements using time-of-flight neutron-diffraction data demonstrate that the method produces pure material in a reproducible way and that the materials are substoichiometric with respect to oxygen (δ=0.3). Investigations using electron diffraction and high-resolution electron microscopy indicate the absence of stacking faults.     

Defect versus nanocrystal luminescence emitted from room temperature and hot-implanted SiO2 layers

Silicon nanocrystals have been synthesized in SiO₂ matrix using Si ion implantation. Si ions were implanted into 300-nm-thick SiO₂ films grown on crystalline Si at energies of 30–55 keV, and with doses of 5×10¹⁵, 3×10¹⁶, and 1×10¹⁷ cm⁻². Implanted samples were subsequently annealed in an N₂ ambient at 500–1100°C during various periods. Photoluminescence spectra for the sample implanted with 1×10¹⁷ cm⁻² at 55 keV show that red luminescence (750 nm) related to Si-nanocrystals clearly increases with annealing temperature and time in intensity, and that weak orange luminescence (600 nm) is observed after annealing at low temperatures of 500°C and 800°C. The luminescence around 600 nm becomes very intense when a thin SiO₂ sample is implanted at a substrate temperature of 400°C with an energy of 30 keV and a low dose of 5×10¹⁵ cm⁻². It vanishes after annealing at 800°C for 30 min. We conclude that this luminescence observed around 600 nm is caused by some radiative defects formed in Si-implanted SiO₂.     

Sr-doped LaInO3 and its possible application in a single layer SOFC

The effects of dopants on the electrical conductivity of the perovskite-type oxide LaInO₃ have been investigated. Replacement of La by Sr is the most effective way to enhance the conductivity of LaInO₃, whereas Ca substitution for In is rather difficult due to the large difference in the ion radii. The optimum composition is La_0.9Sr_0.1InO_3−δ whose maximum conductivity is 7.6×10⁻³ S cm⁻¹ at 900°C. The electrical conductivity of La_0.9Sr_0.1InO_3−δ has been measured over a wide range of oxygen partial pressure from pO₂=1 to 10⁻²⁵ atm. P-type and n-type behavior at high and low oxygen partial pressure have been observed, respectively, while at intermediate oxygen partial pressures, the electrical conductivity changes only slightly with the oxygen partial pressure. The concept of a single layer solid oxide fuel cell based on a La_0.9Sr_0.1InO_3−δ ceramic pellet has been tested. A maximum power density of 3 mW cm⁻² at 800°C was achieved when dilute H₂ and air were used as fuel and oxidizing agent, respectively.     

Improved constants for the 7820 Å and 7883 Å bands of CO2

High-dispersion spectra of Venus are used to obtain line positions and band constants for the (105)_I and (105)_II bands of CO₂. An improved method of analysis is used to obtain very accurate results. Assuming B″ = 0.390218 and D″ = 13.3 × 10^-8 for the ground state, we find for 7820: ω₀ = 12774.727 cm^-1 ±0.002, B' = 0.374540 ±0.000006, D' = 10.9 × 10^-8 ±0.4, for 7883: ω₀ = 12672.274 cm^-1 ±0.004, B' = 0.375657 ±0.000014, D' = 17.2 × 10^-8 ±1.7,

The values for ω₀ and B' are at least an order of magnitude more accurate than those given by Herzberg and Herzberg in 1953, and the D' values are new.