Intersubband transitions and refractive index changes in coupled double quantum well with different well shapes

In this study, both the linear intersubband transitions and the refractive index changes in coupled double quantum well (DQW) with different well shapes for different electric fields are theoretically calculated within framework of the effective mass approximation. Results obtained show that intersubband transitions and the energy levels in coupled DQW can importantly be modified and controlled by the electric field strength and direction. By considering the variation of the energy differences, it should point out that by varying electric field we can obtain a blue or red shift in the intersubband optical transitions. The modulation of the absorption coefficients and the refractive index changes which can be suitable for good performance optical modulators and various infrared optical device applications can be easy obtained by tuning applied electric field strength and direction.     

Weakly nonparaxial “laser bullets”

The perturbation theory for finding nonparaxial corrections to the structure of “laser bullets,” which represent three-dimensional optical solitons in a medium with nonlinear gain and absorption, is developed. A simple form of polarization and angular field structures is obtained. The main nonparaxial effects are the manifestation of the longitudinal component of the electric field and the asymmetry of intensity distribution.     

Theoretical studies of polarization dependent electro-optical modulation in lattice matched and strained multi-quantum well structures

We report on polarization dependent optical absorption for excitonic and interband transitions in lattice matched (GaAs/AlGaAs) and strained (biaxial tensile strain - GaAsP/AlGaAs; biaxial compressive strain - InGaAs/AlGaAs) multiquantum well structures in the presence of transverse electric fields. The hole states are solved by using the Kohn-Luttinger Hamiltonian and using an eigenvalue technique. The effect of heavy-hole and light-hole mixing due to the strain, electric field and quantization is studied. Under biaxial tensile strain the heavy-hole and light-hole transition can coincide, leading to interesting polarization dependent effects. Results are presented for excitonic and interband transitions.     

Influence of lateral electric field on intraband optical absorption in concentric double quantum rings

The influence of lateral electric field on one-electron states and intraband absorption in two-dimensional concentric double quantum rings is investigated. The confining potential of the rings is modeled as a double harmonic central potential. Using the exact diagonalization technique, we calculate the dependence of the electron energy spectrum as a function of the electric field strength as well as the inner ring radius. Also, different values of confinement strength are considered. Selection rule is obtained for intraband transitions, caused by the direction of incident light polarization. The intraband absorption coefficient is calculated for different values of electric field strength, inner ring radius, confinement strength and incident light polarization direction. The combined influence of electric field strength and change of confining strength show that while the increment of the first one leads only to blueshift of absorption spectrum, the augment of the second one makes the redshift. In addition, both blueshift and redshift of the spectrum have been obtained with the enlargement of inner ring radius. Finally, we show that the absorption spectrum undergoes redshift by changing the polarization of incident light from x- to y-axis.     

电场调控双层石墨烯纳米带的电子结构和光学性质

利用基于密度泛函理论的第一性原理方法,研究了外加电场作用下双层AA堆垛的Armchair边缘石墨烯纳米带(BAGNRs)的电子结构和光学性质. BAGNRs具有半导体特性,其带隙随带宽(宽度为4～12个碳原子)的增加而振荡性减小.当施加电场后,BAGNRs的带隙随着电场强度的增加而逐渐减小,带隙越大对电场值的变化越敏感.当电场值为0.5 V/?时,所有BAGNRs的带隙都为零. BAGNRs具有各向异性的光学性质,其介电函数在垂直极化方向为半导体特性,而在平行极化方向为金属特性.在外加电场的作用下,BAGNRs的介电函数、吸收系数、折射系数、反射系数、电子能量损失系数和光电导率,其峰值向低能量区域移动,即产生红移现象.电场增强了能带间的跃迁几率.纳米带宽度对这些光学性质参数具有不同程度的影响.研究结果解释了电场调控BAGNRs光学性质的规律和微观机理.     

Wilson chains are not thermal reservoirs

The effects of transverse electric field on the electronic structures, exciton states and excitonic absorption spectra in a cylindrical quantum wire are theoretically investigated in detail. The quantum wire is assumed to GaAs material surrounded by the infinite potential barrier. The results show that the external electric field removes the degeneracy of the electron or hole states. The energy levels of electron and hole, exciton binding energy, excitonic absorption coefficient and absorption energy decrease with increasing the strength of the electric field or the wire radius. The effects of the electric field become more significant for wide wires. The phenomena can be explained by the reduced spatial overlap of ground electron and hole states.     

Dynamic magnetoelectric effect in terbium molybdate

The electric polarization induced in ferroelectric terbium molybdate by a magnetic field linearly varying with time is measured. The measurements are performed in fields up to 19 T at different specified rates of change in the magnetic field at temperatures of 273 and 219 K. The results obtained indicate that there are magnetoelectric effects of two types. One of them is a conventional magnetoelectric effect, which is appropriately referred to as the static magnetoelectric effect. The other effect is characterized by the fact that the electric polarization increases with an increase in the rate of change in the magnetic field and relaxes with time to zero at a fixed nonzero field. This phenomenon is termed the dynamic magnetoelectric effect.     

Electric polarization of magnetic textures: New horizons of micromagnetism

A common scenario of magnetoelectric coupling in multiferroics is the electric polarization induced by spatially modulated spin structures. It is shown in this paper that the same mechanism works in magnetic dielectrics with inhomogeneous magnetization distribution: the domain walls and magnetic vortexes can be the sources of electric polarization. The electric field driven magnetic domain wall motion is observed in iron garnet films. The electric field induced nucleation of vortex state of magnetic nanodots is theoretically predicted and numerically simulated. From the practical point of view the electric field control of micromagnetic structures suggests a low-power approach for spintronics and magnonics.     

Intraband Dynamics and Terahertz Emission in Biased GaAs/In0.53Ga0.47As Semiconductor Superlattices

Using an excitonic basis, we investigate the intraband polarization, opticalabsorption spectra, and terahertz emission of semiconductor superlattice withthe density matrix theory. The excitonic Bloch oscillation is driven by the dcand ac electric fields. The slow variation in the intraband polarizationdepends on the ac electric field frequency. The intraband polarizationincreases when the ac electric field frequency is below the Bloch frequency.When the ac electric field frequency is above the Bloch frequency, theintraband polarization downwards and its intensity decreases. The satellitestructures in the optical absorption spectra are presented. Due to excitonicdynamic localization, the emission lines of terahertz shift in different acelectric field and dc electric field.     

On the influence of strong electric and magnetic fields on spatial dispersion and anisotropy of the optical properties of a semiconductor

Nonperturbative methods were used to construct a single-integral equation for the photon polarization operator in a semiconductor in strong electric and magnetic fields of arbitrary orientations. Spatial dispersion was taken into account. The external field configurations at which its influence could be ignored were found. Asymptotic equations for the field dependences of the absorption coefficient and refractive index were obtained. The neglect of the spin of particles was shown to lead to a fundamentally false idea of magnetic field effects on the optical properties of nonconducting crystals.     

Generating spin currents in semiconductors with the spin Hall effect

We investigate electrically induced spin currents generated by the spin Hall effect in GaAs structures that distinguish edge effects from spin transport. Using Kerr rotation microscopy to image the spin polarization, we demonstrate that the observed spin accumulation is due to a transverse bulk electron spin current, which can drive spin polarization nearly 40 microns into a region in which there is minimal electric field. Using a model that incorporates the effects of spin drift, we determine the transverse spin drift velocity from the magnetic field dependence of the spin polarization.     

Optical rectification and frequency doubling in metal vapors

It is theoretically shown that, under conditions of two-photon absorption of radiation by metal vapors, the medium becomes considerably polarized and efficiently doubles the radiation frequency. Two physical mechanisms by which these effects can occur are detected. The first of them results from the ring frequency mixing, while the second one is caused by a polarization nonlinearity that is quadratic in the field amplitude and that is formed as a result of the electric quadrupole absorption due to the forbidden transition. The effects predicted can form the basis for new optical methods for measuring the electric quadrupole and magnetic dipole moments for forbidden atomic transitions.     

Quantum-Confined Stark Effects in a Single GaN Quantum Dot

Using analytical expressions for the polarization field in GaN quantum dot, and an approximation by separating the potential into a radial and an axial, we investigate theoretically the quantum-confined Stark effects. The electron and hole energy levels and optical transition energies are calculated in the presence of an electric field in different directions. The results show that the electron and hole energy levels and the optical transition energies can cause redshifts for the lateral electric field and blueshifts for the vertical field. The rotational direction of electric field can also change the energy shift.     

Ultra-broadband absorber based on cascaded nanodisk arrays

An ultra-broadband perfect absorber consisting of cascaded nanodisk arrays is demonstrated by placing insulator-metal-insulator-metal nanodisks on insulator-metal film stacks. The absorber shows over 90% absorption in a wavelength range between 600 nm and 4000 nm under transverse magnetic (TM) polarization, with an average absorptivity of 91.5% and a relative absorption bandwidth of 147.8%. The analysis of the electric field and magnetic field show that the synergy of localized surface plasmons, propagating surface plasmons, and plasmonic resonant cavity modes leads to the ultra-broadband perfect absorption, which accords well with the results of impedance-matched analysis. The influences of structural parameters and different metal materials on absorption performance are discussed. Furthermore, the absorber is polarization-independent, and the absorption remains more than 90% at a wide incident angle up to 40° under TE polarization and TM polarization. The designed ultra-broadband absorber has promising prospects in photoelectric detection and imaging.     

Abnormal polarization enhancement effects of P(VDF-TrFE) films during fatigue process

The effects of alternating electric field on the fatigue behaviors of poly(vinylidene fluoride-trifluoroethylene) copolymer films were investigated. The value of the remanent polarization (Pr) reached a maximum with the increase of cycle number of alternating electric filed, and then decreased as observed from the curve of polarization vs. switching cycles. It was found that the maximum point is associated with the frequency of alternating electric field. Dual effects, i.e., polarization enhancement and degradation, were supposed to coexist during the process of fatigue. A model considering the two effects was proposed to describe the fatigue behaviors, and the simulated data fit well with the experimental data.     

The electrostriction of dielectrics

The deformation of bodies in an electric field was first observed by Fontana [1] and Volpicelli [2], and Outer [3] analyzed the phenomenon quantitatively. Lippman predicted the phenomenon of electrostriction from general thermodynamic principles after the discovery of piezoelectricity by the Curie brothers [4].We may presume that any dielectric will exhibit electrostrictive properties to some extent. In fact, Zheludev [5] has shown that the oscillation of a dielectric pendulum is closely connected to, and dependent on, the polarization of the material. Since the polarization effect is inherent in all dielectrics, electrostriction is also a basic property of any dielectric.Both polarization and electrostriction appear in a dielectric under the influence of an electric field. Clearly, these effects will cause a change in the capacitance of condensers containing the experimental samples under the action of the electric field. The goal of the present work is to verify this reasoning and to determine which of the factors under consideration plays the dominating role.     

Electrocaloric Effect of P(VDF-TrFE)/SrTiO_3 Bilayer Thin Films

A phenomenological thermodynamic theory is applied to investigate the effect of misfit strain and electric field on the electrocaloric effect of P(VDF-TrFE)/SrTiO 3 bilayer thin films.Theoretical results indicate that the low electric field results in the decrease of the average polarization with the increase of the relative thickness of SrTiO 3 layer,and the high electric field has an opposite effect on it.Moreover,the electrocaloric effect strongly depends on the electric field.The low electric field and the small field change can lead to a maximum of the electrocaloric effect,meanwhile the high electric field or the large field change results in the opposite trend.     

外电场极化对纳米氧化锌拉曼活性及气敏性能的影响

采用沉淀法制备了纳米氧化锌粒子,着重对其进行了不同条件(电场强度、极化温度)下的外电场极化处理.以X射线衍射仪和拉曼光谱仪对产物的结构、拉曼位移等进行了表征.测试了氧化锌极化产物在乙醇、丙酮气体中的气敏性能,研究了外电场效应对纳米氧化锌拉曼光谱和气敏性能的影响机制.结果表明,纳米氧化锌样品在外电场中存在着极化电场强度和温度的阈值,当电场强度和温度分别大于9375 V·cm~(-1)和150℃时,纳米氧化锌试片出现明显的漏电现象,极化效应显著降低并消失.在电场强度和温度阈值范围内,外电场极化作用能够导致氧化锌437 cm~(-1)处的拉曼特征峰强度明显降低.随外电场强度和极化温度增加,纳米氧化锌元件在丙酮气体中的灵敏度逐渐升高,在乙醇气体中的灵敏度逐渐降低,即外电场极化可以有效调控纳米氧化锌的气敏选择性.     

电场诱导氧化石墨烯的极化动力学特性研究

本文通过外加电场改变氧化石墨烯团簇分子的共振能量,利用激光激发氧化石墨烯产生的共振荧光特性测量氧化石墨烯在电场作用下的极化动力学特性. 发现存在外加电场使得荧光共振峰的半高全宽趋于饱和的时间特性,而不同的氧化石墨烯团簇分子的荧光共振峰的暂态特性同时反映了电场对氧化石墨烯产生定向极化和变形极化的动力学特性. 关键词： 氧化石墨烯 团簇分子 电场 极化动力学     

Luminescence from Si-Si1−xGex/Si1−yCy-Si structures

Near band edge photoluminescence has been obtained from Si_1−yC_y quantum well (QW) and neighboring Si_1−xGe_x/Si_1−yC_y double QW (DQW) structures. Enhanced no-phonon recombination is observed from the DQW structures and it is attributed to a breaking of the k-selection rule in the presence of the heterointerface. The luminescence persists for measurement temperatures up to 30–50 K and the intensity exhibits a quenching behavior with an activation energy equal to 8–20 meV. In electroluminescence only recombination in the Si_1−xGe_x layer has been observed from neighboring Si_1−xGe_x and Si_1−yC_y DQW structures.