铁电双层膜的反转动力学行为

基于Landau-Khalatnikov运动方程,本文研究了含有表面过渡层和铁电界面耦合的反转动力学行为(包括平均极化、反转时间、反转电流和矫顽场).研究结果表明:在铁电双层膜系统中存在一个竞争的机理,即表面过渡层与界面耦合的竞争作用.我们发现在双层膜反转过程中出现了反常行为,这些反常行为归因于表面过渡层与界面耦合之间的竞争.表面过渡层与界面耦合的共同行为对铁电双层膜的动力学特性起到了决定性的作用.     

Dielectric susceptibility of a ferroelectric bilayer film with surface transition layers

Using the transverse Ising model within the framework of the mean-field theory, we investigate a ferroelectric bilayer film with the surface transition layer within each constituent slab and an antiferroelectric interfacial coupling between two slabs. The combined influence of the surface transition layer and antiferroelectric interfacial coupling on the dielectric susceptibility of a bilayer film is discussed in detail. The results show that the surface transition layer plays a crucial role in dielectric susceptibility of a bilayer film.     

The polarization and dielectric susceptibility of a ferroelectric bilayer film

A ferroelectric bilayer film consisting of two different ferroelectric constituent films with a transition layer within each constituent film and interfacial coupling between two materials is investigated based on the Ginzburg-Landau-Devonshire phenomenological theory. A parameter α, which describing the differences between physical properties of two constituent films is first introduced in our paper, and reflects a more realistic situation compared to the previous treatments assuming the same two constituent films. We study the polarization and dielectric susceptibility properties of the ferroelectric bilayer film with two different constituent films. The results present some interesting phenomena due to the introduction of parameter α.     

The hysteresis loops of a ferroelectric bilayer film with surface transition layers

Based on the transverse Ising model in the framework of the mean field approximation,this paper discusses a ferroelectric bilayer film with the surface transition layers within each constituent slab and an antiferroelectric interfacial coupling between two slabs.The hysteresis loop of a bilayer film is investigated.The results show that the surface transition layer in a ferroelectric bilayer film plays a significant role in realizing the multiple-state memory.     

外场作用下铁电/铁磁双层膜的极化磁化性质

建立了铁电/铁磁双层膜模型,铁电层的电矩用连续标量描述,而铁磁层的自旋应用经典矢量描述.利用蒙特卡罗方法模拟了体系的热力学性质和极化、磁化行为.给出了零场下体系的内能、比热、极化和磁化随温度变化的关系,并分别研究了体系在外磁场和外电场下的极化和磁化行为.模拟结果表明,双层膜体系的内能、比热、极化和磁化性质因层间耦合系数的不同而明显不同,当界面耦合较弱时,双层膜表现出各自的热力学性质,当层间耦合增强到一定程度时,双层膜耦合为一个整体,表现出统一的热力学性质.该双层膜在外场中形成电滞回线和磁滞回线,并表现出偏置特性,界面耦合强度和温度影响滞后回线和偏置现象.     

Study on the dynamic critical behavior of a ferroelectric heterostructure

A Landau–Devonshire theory added in Landau–Khalatnikov dynamic equation has been used firstly to explore the dynamic critical behavior of a ferroelectric heterostructure composed of two different ferroelectric films. Two identical surface transition layers within each film are assumed, and an antiferroelectric interfacial coupling between two materials is considered. One interfacial parameter β is introduced to describe the differences of physical characteristics between two constituent films, which can reflect more realistic dynamic mechanism. It is found that the ferroelectric heterostructure may exhibit multi-loop hysteresis loop and four peaks of dielectric susceptibility if the appropriate values of parameter β, antiferroelectric interfacial coupling and size of the system are selected. We obtain the critical behavior of the appearance in multi-loop hysteresis loops and four peaks of dielectric susceptibility by equilibrium action of parameter β and antiferroelectric interfacial coupling, which will provide theoretical guiding for designing the multi-state memory and miniaturized device in future.     

Dynamic hysteresis loop in a ferroelectric heterostructure

A Landau–Devonshire theory in combination with Landau–Khalatnikov dynamic equation has been firstly used to study the dynamic hysteresis loop of a ferroelectric heterostructure consisting of two different films. The surface transition layer within each component film and an antiferroelectric coupling at the interface between two films are considered. A parameter β is introduced to describe the differences of physical properties between two constituent films. The influence of parameterβ, surface transition layer, antiferroelectric coupling and electric field frequency on the dynamic hysteresis loop of the ferroelectric heterostructure is discussed in detail. The results show that the system can exhibit antiferroelectriclike behavior (i.e., multi-loop hysteresis) through tuning some critical factors.     

Long—Range Effects on the Pyroelectric Coefficient of Ferroelectric Superlattice

Long-range effects on the pyroelectric coefficient of a ferroelectric superlattice consisting of two different ferroelectric materials are investigated based on the transverse Ising model.The effects of the interfacial coupling and the thickness of one period on the pyroelectric coefficient of the ferroelectric superlattics are studied by taking into account the long-range interaction.It is found that with the increase of the strength of the long-range interaction,the pyroelectric coefficient decreases when the temperature is lower than the phase transition temperature;the mumber of the pyroelectric peaks decreases gradually and the phase transition temperature increases,It is also found that with the decrease of the interfacial coupling and the thickness of one period.the phase transition temperature and the number of the pyroelectric peaks decrease.     

Artificial multiferroic heterostructures for an electric control of magnetic properties

The control of magnetism by electric fields is an important goal for future low-power spintronics devices. This partly explains the intensified recent interest for magnetoelectric multiferroic materials and heterostructures. The lack of ferro- or ferrimagnetic–ferroelectric materials with large magnetoelectric coupling between the two orders has spurred intensive research on artificial multiferroics combining ferroelectric or piezoelectric materials and ferromagnets. In this paper we review synthetically the potential of thin-film-based heterostructures in which a magnetic film is in contact with a ferroelectric or piezoelectric one to obtain an electric control of magnetic properties. This electric control either results from a strain-induced magnetoelectric coupling, a charge-driven one, or from the modulation of an interfacial exchange-bias interaction.     

Long-Range Effects on the Pyroelectric Coefficient of Ferroelectric Superlattice

Long-range effects on the pyroelectric coefficient of a ferroelectric superlattice consisting of two differentferroelectric materials are investigated based on the transverse Ising model. The effects of the interfacial coupling andthe thickness of one period on the pyroelectric coefficient of the ferroelectric superlattice are studied by taking intoaccount the long-range interaction. It is found that with the increase of the strength of the long-range interaction, thepyroelectric coefficient decreases when the temperature is lower than the phase transition temperature; the number ofthe pyroelectric peaks decreases gradually and the phase transition temperature increases. It is also found that with thedecrease of the interfacial coupling and the thickness of one period, the phase transition temperature and the number ofthe pyroelectric peaks decrease.     

Transport properties of a ferroelectric tunnel junction in bilayer ferroelectric/manganite structures

This paper presents the results of an experimental investigation of current flow through a ferroelectric nanolayer in a series of bilayer ferroelectric/manganite structures prepared by metalorganic aerosol deposition on a MgO substrate. It has been shown that a variation in the thickness of the ferroelectric layer in a bilayer ferroelectric/manganite structure leads to a change in the metal-insulator phase transition temperature of the manganite layer and also affects the transport properties of the ferroelectric/manganite structure. Based on the analysis of the experimental results, it is demonstrated that the ferroelectric layer up to 4 nm thick exhibits polarization properties. In the theoretical analysis, it is assumed that electrical conduction of bilayer structures is provided by a dual mechanism combining the electron tunneling through a ferroelectric barrier and the ohmic current flow in a manganite layer. The possibility of retaining the mechanism of charge carrier tunneling in a bilayer ferroelectric/manganite structure through the ferroelectric layer up to 6 nm thick is discussed.     

Exchange-coupling-induced fourfold magnetic anisotropy in CoFeB/FeRh bilayer grown on SrTiO3(001)

Exchange coupling across the interface between a ferromagnetic (FM) layer and an antiferromagnetic (AFM) or another FM layer may induce a unidirectional magnetic anisotropy and/or a uniaxial magnetic anisotropy, which has been extensively studied due to the important application in magnetic materials and devices. In this work, we observed a fourfold magnetic anisotropy in amorphous CoFeB layer when exchange coupling to an adjacent FeRh layer which is epitaxially grown on an SrTiO₃(001) substrate. As the temperature rises from 300 K to 400 K, FeRh film undergoes a phase transition from AFM to FM phase, the induced fourfold magnetic anisotropy in the CoFeB layer switches the orientation from the FeRh$\langle 110\rangle $ to FeRh$\langle 100\rangle $ directions and the strength is obviously reduced. In addition, the effective magnetic damping as well as the two-magnon scattering of the CoFeB/FeRh bilayer also remarkably increase with the occurrence of magnetic phase transition of FeRh. No exchange bias is observed in the bilayer even when FeRh is in the nominal AFM state, which is probably because the residual FM FeRh moments located at the interface can well separate the exchange coupling between the below pinned FeRh moments and the CoFeB moments.     

Investigation of the seeding-layer effect for a ferroelectric thin film with the transverse Ising model

The transition feature of a ferroelectric thin film with a seeding layer is studied based on the transverse Ising model. The influence of the seeding layer on the transition behavior of a ferroelectric thin film is investigated systemically, and the effect of the interaction parameters for the seeding layer on the phase diagram is also obtained. Meanwhile, the polarization and Curie temperature of the ferroelectric thin film are calculated for different seeding-layer structures. The results show that the polarization and Curie temperature of the film will be obviously modified on adding a seeding layer.     

Polarization reversal behavior of an asymmetric ferroelectric thin film

Using the Landau–Khalatnikov equation of motion, the polarization reversal behavior in an asymmetric ferroelectric thin film has been studied. Our model first introduces a third power of polarization to describe the asymmetry of a ferroelectric thin film with surface transition layer, which originates from the difference between the surfaces. Interestingly, vertical drift of polarization switching behaviors was found in this system. The properties consisting of hysteresis loop, spontaneous polarization, switching current of an asymmetric ferroelectric thin film with surface transition layer are discussed.     

Effect of dielectric layer on ferroelectric responses of P(VDF-TrFE) thin films

The dielectric layer in the sandwich structural device plays a very important role in determining the electrical properties of the ferroelectric film. In this paper, we investigate the effect of the dielectric layers with different thicknesses on switching performance of ferroelectric P(VDF-TrFE) thin films. The hysteresis loops become slanting with increasing thickness of the dielectric layer. A negative slope of the ‘real’ hysteresis loop is apparently observed which demonstrates negative capacitance effect caused by the dielectric layer. This behavior is simulated qualitatively by the Weiss mean field model considering an interfacial dielectric layer in series with a ferroelectric layer. The agreement between experiments and simulations supports that negative capacitance results from the positive feedback among electric dipoles. Furthermore, the switching time of the ferroelectric film increases with the increase of dielectric layer thickness. This study shows that the ferroelectric sandwich structure provides great potential towards low power negative capacitance devices.     

BaTiO_3/La_(0.67)Sr_(0.33)MnO_(3-δ)复合薄膜的磁致电极化和磁介电特性研究

采用脉冲激光沉积法制备了BaTiO_3(BTO)与缺氧的铁磁绝缘态La_(0.67)Sr_(0.33)MnO_(3-δ)(LSMO)构成的磁电复合薄膜,研究了20—300K温度区间内磁场对电极化特性和介电特性的影响.研究发现,施加磁场使得电滞回线的剩余极化强度和矫顽场均增大,其变化率峰值分别为111.9%和89.6%,峰值温度分别为40K和60K.异质结具有显著的磁介电效应,在测量温度区间内,磁场使得介电常数增大,介电损耗减小.在0.8T场强下,介电常数的最大磁致变化率出现在60K,达到了300%,而介电损耗也在此温度实现了最大变化,减小为零场时的50.9%.该磁电复合薄膜的磁致电极化和磁介电特性的极值均出现在LSMO层的磁电阻峰值温度附近,这说明磁场对电滞回线和介电参数的调制应该源自电荷相关的耦合作用.其可能的机理是磁场使得锰氧化物中的Mn离子局域磁矩趋于有序排列,并通过自旋-轨道耦合以及界面效应间接影响了BTO的电极化特性.研究结果对于多铁器件的开发和应用具有重要意义.     

The interfacial diffusion of chromium(III) fumarato coordination compound in the formation of aluminum-polyethylene composite film

The aqueous solution of chromium(III) fumarato coordination compound (Volan 82) is a coupling agent developed by DuPont in the early 1970's. The application of Volan 82 in the production of aluminum-polyethylene composite film greatly improves the water-resistance and durability of the composite film. Our previous studies demonstrated the chemical bonding between aluminum oxide and chromium(III) fumarato coordination compound. In this paper, AES is reported for the studies of the solvent-resistance of the interfacial polyethylene of the composite film. The AES sputter depth profile of the aluminum-polyethylene interfacial layer demonstrated that the chromium(III) fumarato coupling agent diffused into the interfacial polyethylene layer during the formation of aluminum-polyethylene composite film. This was confirmed by ESCA, when chromium was detected in the interfacial polyethylene layer. The interfacial diffusion of the coupling agent improves the adhesion between aluminum and polyethylene of the composite film.     

Study of Phase Transition Properties in Epitaxial Ferroelectric Film

Based on the transverse Ising model and using decoupling approximation to the Fermi-type Green's function, we study the phase transition properties of the epitaxial ferroelectric film with one substrate. A general recursive equation of the ferroelectric thin film with two n-layer materials is obtained, which enables us to study the phase transition properties for any number layers forepitaxial ferroelectric thin film. With the help of this equation, we analyze the effect of the exchange interaction and the transverse field in the phase diagram, the influence to the polarizations and Curie temperature numerically. The results show that epitaxial ferroelectric film are able to induce a strong increase or decrease of Curie temperature to different exchange interactions and transverse fields within the epitaxial film layers. The theoreticalresults are in reasonable accordance with experimental data of different ferroelectric thin film.     

The effect of a strain induced field on the dielectric property of a ferroelectric bilayer system

The Transverse Ising Model (TIM) based on the effective-field theory has been developed to study the physical properties of the ferroelectric bilayer system BaTiO₃/SrTiO₃ (BTO/STO), based on the differential operator technique. The effect of strain on the interfacial layers between two different slabs (A and B) can be described by the effective built-in field E₂. The ferroelectric behavior of a bilayer system is strongly influenced by strain and associated with slab thickness. The phase transition temperature shifts toward a higher value on increasing the slab thickness. The susceptibility strongly depends on both the strength of strain and the slab thickness. The height of the peak from the plot of susceptibility against temperature decreases on increasing the slab thickness. The pyroelectric coefficient changes into a round peak at the transition temperature that is different from the sharp peak in the absence of external and strain-induced fields.     

Orientation dependence of the electrocaloric effect of ferroelectric bilayer thin films

An analytical thermodynamic theory is applied to investigate the electrocaloric effect of ferroelectric BaTiO₃/SrTiO₃ bilayer thin films with different orientations at room temperature. Theoretical analysis indicates that the strong electrostatic coupling between the layers results in the suppression of ferroelectricity at a critical relative thickness which occurs approximately at 50%, 23%, and 12% of SrTiO₃ fraction in the (001), (110), and (111) bilayer thin films, respectively. The ferroelectric bilayer thin films are respected to have the largest electrocaloric effect at this critical relative thickness. Moreover, the electrocaloric effect strongly depends on the orientation and the (110) oriented bilayer thin films have the largest electrocaloric effect. Consequently, control of the orientation and the relative thickness of SrTiO₃ layer can be used to adjust the electrocaloric effect of ferroelectric bilayer thin films, which may provide the potential for practical application in refrigeration devices.