| The hysteresis loops of a ferroelectric bilayer film with surface transition layers |
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| 作者姓名： | 崔莲 吕天全 孙普男 薛惠杰 |
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| 作者单位： | Center of Condensed Matter Science and Technology, Department of Physics, Harbin Institute of Technology, Harbin 150001, China;Center of Condensed Matter Science and Technology, Department of Physics, Harbin Institute of Technology, Harbin 150001, China;Department of Physics, Heilongjiang University, Harbin 150080, China;Center of Condensed Matter Science and Technology, Department of Physics, Harbin Institute of Technology, Harbin 150001, China |
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| 摘 要： | Based on the transverse Ising model in the framework of the mean field approximation,this paper discusses a ferroelectric bilayer film with the surface transition layers within each constituent slab and an antiferroelectric interfacial coupling between two slabs.The hysteresis loop of a bilayer film is investigated.The results show that the surface transition layer in a ferroelectric bilayer film plays a significant role in realizing the multiple-state memory.
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| 关 键 词： | ferroelectric bilayer film transverse Ising model hysteresis loops surface transition layers |
| 收稿时间： | 2009-11-30 |
The hysteresis loops of a ferroelectric bilayer film with surface transition layers |
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| Cui Lian,Lü Tian-Quan,Sun Pu-Nan,Xue Hui-Jie.The hysteresis loops of a ferroelectric bilayer film with surface transition layers[J].Chinese Physics B,2010,19(7):77701-077701. |
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| Authors: | Cui Lian Lü Tian-Quan Sun Pu-Nan Xue Hui-Jie |
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| Affiliation: | Center of Condensed Matter Science and Technology, Department of Physics, Harbin Institute of Technology, Harbin 150001, China; Department of Physics, Heilongjiang University, Harbin 150080, China |
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| Abstract: | Based on the transverse Ising model in the framework of the mean field approximation, this paper discusses a ferroelectric bilayer film with the surface transition layers within each constituent slab and an antiferroelectric interfacial coupling between two slabs. The hysteresis loop of a bilayer film is investigated. The results show that the surface transition layer in a ferroelectric bilayer film plays a significant role in realizing the multiple-state memory. |
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| Keywords: | ferroelectric bilayer film transverse Ising model hysteresis loops surface transition layers |
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