碳纳米管场致电子发射新机制

基于对长达 1μm的 (5 ,5 )碳纳米管的量子力学计算 ,作者发现使碳纳米管具有优异场致电子发射特性的因素除了人们预期的尖端场增强之外 ,电荷在纳米管尖端的积累造成有效功函数 (真空势垒 )的非线性下降也起了非常重要的作用 .对外加电场Vappl=10— 14V/ μm下的碳纳米管进行了计算 ,得到与实验结果相近的发射电流     

增强碳纳米管场发射性能的沟槽形冷阴极制作(英文)

基于烧结工艺和丝网印刷技术,研发了一种新的沟槽形冷阴极.底部绝缘层由黑色绝缘浆料被烧结后制成,且在底部绝缘层中存在倾斜面.将银浆丝网印刷在条形电极上,依次经烘烤和烧结工艺后形成银电极.利用细砂纸,对银电极进行适当的抛光工艺,以便获得光滑的电极表面.由于特有的银电极形状,从而易于获得更大的场增强因子.将碳纳米管制备在银电极上,形成场发射极.致密的碳纳米管层完全覆盖银电极表面,特有的边缘场增强效应能够使得碳纳米管发射出更多的电子.顶部绝缘层则用于抑制碳纳米管的横向电子发射.结合沟槽形冷阴极,制作了三极结构的场致发射显示器,该显示器具有良好的场致发射特性及优良的发光图像均匀性.与普通冷阴极场致发射显示器相比,沟槽形冷阴极场致发射显示器能够将开启电场从1.86V/μm降低到1.78V/μm,将最大场致发射电流从1 537μA增加到2 863μA,且将最大发光图像亮度从1 386cd/m2提高到1 865cd/m2.该制作技术在场致发射显示器中具有较强的实际应用性.     

碳纳米管在大气压环境中的场致发射特性

研究了在大气压环境下,单根碳纳米管作为场致发射阴极,与阳极间距为100—200 nm时的场致发射特性.对比了碳纳米管在不同阴阳极间距和不同气体环境中的场致发射电流和噪声的特点. 关键词： 碳纳米管 场致发射 大气压     

CNx纳米管的制备、结构观察及低场致电子发射性能研究

采用高温热解法 ,以乙二胺为前驱液 ,在沉积有铁催化剂的p型硅 (1 1 1 )基底上制备出了定向生长的CNx 纳米管 .利用扫描电子显微镜、高分辨率透射电子显微镜和拉曼光谱对CNx 纳米管进行了形貌观察和表征 .CNx 纳米管的高度在 2 0 μm左右 ,直径在 5 0— 1 0 0nm之间 ,具有明显的“竹节状”结构 ,结晶有序度较差 .对CNx 纳米管薄膜进行低场致发射性能测试 :外加电场为 1 4V μm ,观察到 2 0 μA cm2 发射电流 ,外电场升至 2 5 4V μm时发射电流达到1 2 80mA cm2 ,在较高外电场下 ,没有发现电流“饱和” .这比相同实验条件下改变前驱液制备出的碳纳米管和硼碳氮纳米管的场发射性能优越 .还在“竹节状”结构的基础上对CNx 纳米管的场致电子发射机理进行了讨论     

类富勒烯纳米晶CNx薄膜及其场致电子发射特性

利用微波等离子体增强化学气相沉积技术制备出了CN_x薄膜,并利用x射线光电子能谱、x射线衍射、扫描电子显微镜和Raman光谱等测试手段对所制备的CN_x薄膜的微结构和成分进行了分析.研究了其场致电子发射特性.发现薄膜的结构和场发射特性与反应系中的甲烷、氮气及氢气的流量比有关,当甲烷、氢气及氮气流量比为8/50/50 sccm时,制备的薄膜具有弯曲层状的纳米石墨晶体结构（类富勒烯结构）和很好的场发射特性.场发射阈值电场降低至1.1V/μm.当电场为5.9V/μm时,平 关键词： 类富勒烯 x薄膜')" href="#">CN_x薄膜 场致电子发射 微波等离子体增强化学气相沉积     

大电流密度碳纳米管场致发射阴极阵列的研制

 设计了一种由TiN，Al，Fe和牺牲层构成的堆栈式催化剂层结构，采用微波等离子体化学气相沉积法实现碳纳米管阵列高速笔直生长。SEM和TEM结果表明，生长出来的碳纳米管为典型的多壁碳纳米管，长度和直径均匀，排列整齐并垂直于基底，生长速率大于5 μm/min，晶格缺陷少。场致发射测试结果表明：碳纳米管的发射阵列具有良好的电流发射稳定性，最大电流密度大于6 A/cm2。紫外光电子能谱法（UPS）测试出碳纳米管的功函数为4.59 eV，则相应的场致发射陈列的场增强因子大于1 400。     

一种平行栅碳纳米管阵列阴极的场发射特性研究

建立一种平行栅碳纳米管阵列阴极,利用悬浮球模型和镜像电荷法进行计算,给出碳纳米管顶端表面电场与电场增强因子的解析式. 在此基础上,进一步分析器件各类参数以及接触电阻对阴极电子发射性能的影响. 分析表明,碳纳米管间距大约为2倍碳纳米管高度时阵列阴极的分布密度最佳,靠边缘部位的碳纳米管发射电子能力比其中心部位的大;除碳纳米管的长径比之外,栅极宽度和栅极间距也对电场增强因子有一定作用;接触电阻的存在大幅度降低碳纳米管顶端表面电场与发射电流,而接触电阻高于800 kΩ时,器件对阳极驱动电压的要求更高. 关键词： 平行栅碳纳米管阵列 悬浮球 场增强因子 接触电阻     

基于碳纳米管场致发射的电子枪的初步研究

给出了基于碳纳米管场致发射电子枪的初步研究结果. 碳纳米管场致发射试验证明碳纳米管是一种很好的场致发射材料. 试验中, 在极间场强2.7MV/m的情况下得到的电流发射密度为0.5mA/cm².     

印刷制作的双半导体底层碳纳米管薄膜阴极的稳定电子发射

应用带保护气进行烧结的方法,制作了一种双半导体底层碳纳米管薄膜阴极.利用烧结的银浆形成条形银电极,在条形银电极表面制作了具有相同宽度且平行排列的ZnO掺杂底层和TiO2掺杂底层,在掺杂底层上面制备了碳纳米管膜层.由于保护气的防氧化屏蔽,碳纳米管膜层中的碳纳米管未受损害,ZnO粒子和TiO2粒子也在烧结过程中得到了很好地保护,双半导体底层碳纳米管薄膜阴极获得更优的电子发射特性,且电子发射稳定性也得到有效增强.与普通条形银电极碳纳米管阴极相比,双半导体底层碳纳米管薄膜阴极能够将开启电场从2.09V/μm降低到1.91V/μm,将最大电子发射电流从1 653.5μA提高到2 672.9μA.在2.69V/μm电场作用下,普通条形银电极碳纳米管阴极的电子发射电流仅为421.1μA,而双半导体底层碳纳米管薄膜阴极的电子发射电流能够达到723.5μA.从发射电流稳定性实验曲线可以看出,双半导体底层碳纳米管薄膜阴极实现了稳定的电子发射,表明ZnO掺杂底层和TiO2掺杂底层能够应用于真空环境.利用数码相机获得了具有良好质量的发射图像,验证了双半导体底层碳纳米管薄膜阴极制作的可行性和适用性.     

碳纳米管冷阴极脉冲发射特性及仿真模型研究

针对碳纳米管场致发射冷阴极在微波、毫米波电真空辐射源器件中的应用需求,采用2μs,20 kV的脉冲高压对碳纳米管场致发射冷阴极的脉冲发射特性进行了实验研究.通过改变阴阳极间距,对碳纳米管冷阴极发射电流特性及发生脉冲高压打火后的碳纳米管冷阴极发射特性进行了测试研究.在直径为4 mm的圆形平面碳纳米管冷阴极上获得最大发射电流16 mA,电流密度为127 mA/cm~2.以实验测试数据为基础,结合粒子模拟软件建立碳纳米管冷阴极场致发射仿真模型,给出了该仿真模型的相关参数,为下一步设计研制碳纳米管冷阴极电子光学系统及相关辐射源器件奠定基础.     

A comparative analysis of thin-film transistors using aligned and random-network carbon nanotubes

The purpose of this project is to investigate the characterization of carbon nanotube (CNT) thin-film transistors based on two solution-based fabrication methods: dielectrophoretic deposition of aligned CNTs and self-assembly of random-network CNTs. The electrical characteristics of aligned and random-network CNT transistors are studied comparatively. In particular, the selection effect of metallic and semiconducting CNTs in the dielectrophoresis process is evaluated experimentally by comparing the output characteristics of the two transistors. Our results demonstrate that the self-assembly method produces a stronger field effect with a much higher on/off ratio (I _on /I _off ). This phenomenon provides evidence that the metallic CNTs are more responsive to dielectrophoretic forces than their semiconducting counterparts under common deposition conditions. In addition, the nanotube–nanotube cross-junctions in random-network CNT films create additional energy barriers and result in a reduced electric current. Thus, additional consideration must be applied when using different fabrication methods in building CNT-based electronic devices.     

Mechanism of field electron emission from carbon nanotubes

Field electron emission (FE) is a quantum tunneling process in which electrons are injected from materials (usually metals) into a vacuum under the influence of an applied electric field. In order to obtain usable electron current, the conventional way is to increase the local field at the surface of an emitter. For a plane metal emitter with a typical work function of 5 eV, an applied field of over 1 000 V/μm is needed to obtain a significant current. The high working field (and/or the voltage between the electrodes) has been the bottleneck for many applications of the FE technique. Since the 1960s, enormous effort has been devoted to reduce the working macroscopic field (voltage). A widely adopted idea is to sharpen the emitters to get a large surface field enhancement. The materials of emitters should have good electronic conductivity, high melting points, good chemical inertness, and high mechanical stiffness. Carbon nanotubes (CNTs) are built with such needed properties. As a quasi-one-dimensional material, the CNT is expected to have a large surface field enhancement factor. The experiments have proved the excellent FE performance of CNTs. The turn-on field (the macroscopic field for obtaining a density of 10 μA/cm²) of CNT based emitters can be as low as 1 V/μm. However, this turn-on field is too good to be explained by conventional theory. There are other observations, such as the non-linear Fowler-Nordheim plot and multi-peaks field emission energy distribution spectra, indicating that the field enhancement is not the only story in the FE of CNTs. Since the discovery of CNTs, people have employed more serious quantum mechanical methods, including the electronic band theory, tight-binding theory, scattering theory and density function theory, to investigate FE of CNTs. A few theoretical models have been developed at the same time. The multi-walled carbon nanotubes (MWCNTs) should be assembled with a sharp metal needle of nano-scale radius, for which the FE mechanism is more or less clear. Although MWCNTs are more common in present FE applications, the single-walled carbon nanotubes (SWCNTs) are more interesting in the theoretical point of view since the SWCNTs have unique atomic structures and electronic properties. It would be very interesting if people can predict the behavior of the well-defined SWCNTs quantitatively (for MWCNTs, this is currently impossible). The FE as a tunneling process is sensitive to the apex-vacuum potential barrier of CNTs. On the other hand, the barrier could be significantly altered by the redistribution of excessive charges in the micrometer long SWCNTs, which have only one layer of carbon atoms. Therefore, the conventional theories based upon the hypothesis of fixed potential (work function) would not be valid in this quasi-one-dimensional system. In this review, we shall focus on the mechanism that would be responsible for the superior field emission characteristics of CNTs. We shall introduce a multi-scale simulation algorithm that deals with the entire carbon nanotube as well as the substrate as a whole. The simulation for (5, 5) capped SWCNTs with lengths in the order of micrometers is given as an example. The results show that the field dependence of the apex-vacuum electron potential barrier of a long carbon nanotube is a more pronounced effect, besides the local field enhancement phenomenon.     

Field emission properties of carbon nanotube film using a spray method

We fabricated carbon nanotube (CNT) emitters by a spray method using a CNT suspension with ethanol. Indium with a low melting pointing metal or indium tin oxide (ITO) was deposited on the glass substrate. The CNTs were sprayed on these layers and thermally annealed. The sprayed CNTs on an ITO were obtained a high emission current density, field enhancement factor, and a uniform emission pattern than the sprayed CNTs on an ITO layer. We found that the sprayed emitters on the indium layer had good field emission characteristics because of the strong adherence between the metal layer and CNTs.     

基于有限元软件分析碳纳米管的最佳阵列密度

利用有限元软件ANSYS,对碳纳米管的最佳阵列密度进行了分析。针对碳纳米管阵列静电场分布的特点,建立了碳纳米管的模型,确定了模型的边界条件。为了便于对计算结果进行对照,在分析时采用的参数是:阵列周期T=2000nm,单根碳纳米管长度L=1μm,顶端半径r=2nm。通过计算得到了单根碳纳米管的场增强因子为321。在长度L和顶端半径r不变的情况下,使用了参数化设计语言,计算了在不同周期(200～4000μm)下碳纳米管场增强因子随周期变化的情况,进一步利用Fowler Nordheim函数得到最佳阵列周期(1600μm)。结果证明,利用有限元软件,其分析过程不仅正确性,而且实用,并且为此类问题的解决提供了一个通用的方法。     

Growth of carbon nanotubes on stainless steel substrates by DC-PECVD

We report on the fabrication of carbon nanotubes (CNTs) on Ni-coated stainless steel (SUS) substrates by using dc plasma enhanced chemical vapor deposition. The synthesized CNTs have the diameter of about 30 nm and the length of about 1.2 μm. To verify the effects of SUS substrates on the growth of CNTs, CNTs had also been grown on Ni-coated Si substrates. CNTs grown on the SUS substrates were more uniform compared with those grown on the Si substrates. Field emission properties of the CNT films were measured in the diode configuration, and the turn-on electric field of 3.87 V/μm and field enhancement factor β of about 1737 were obtained from the synthesized CNTs at the gap of 500 μm between the SUS substrate and the anode. These results have not only clarified the effects of the substrate on the growth of CNTs, but also shown the potential of CNTs in field emission applications, especially CNT-based cold-cathode X-ray tubes.     

碳纳米管/硅纳米孔柱阵列的场发射性能

"通过热化学气相沉积的方法将碳纳米管生长到硅纳米孔柱阵列衬底上．采用场发射扫描电子显微镜、透射电子显微镜、高分辨透射电子显微镜、拉曼光谱和X射线能谱对所制备的样品形貌、组成进行了分析．结果发现：所制备产物为一种具有面积大、准周期性的碳纳米管/硅巢状阵列复合结构．能谱分析表明碳纳米管仅含有碳元素．对样品进行场发射性能测试表明该结构开启电压为1.3 MV/m,当外加电压为4.26 MV/m,发射电流为5 mA/cm2．由FN公式计算相应的场增强因子约为1.1￡104．碳纳米管/硅纳米孔柱阵列好的场发射性能被归     

Area effect of patterned carbon nanotube bundle on field electron emission characteristics

Patterned carbon nanotube (CNT) bundles were fabricated using thermal chemical vapor deposition (CVD) method. Patterns of different diameters and distances were defined on Si(100) substrates using photolithography. CNT bundle height was controlled using different acetylene (C₂H₂) flow times. The inter-bundle distance of CNTs to CNT bundle height ratio was maintained at approximately 2, a number predicted to have a maximum field emission for CNT, and left the patterned CNT bundle area as a variable parameter. The relationship between CNT bundle area and the field electron emission characteristics was studied. The lowest threshold electric field (E_th) of 0.7 V/μm was obtained when the total area of patterned CNT bundles was approximately 46%. The result shows that there is an optimal CNT bundle area for electron field emission.     

Enhanced field emission characteristics of zinc oxide mixed carbon nano-tubes films

A composite material of Zinc oxide and carbon nano-tubes (ZnO-CNTs) paste was synthesized by mixing multi-wall CNTs, ZnO nano-grains and organic vehicles. The microstructures and the morphologies of screen-printed films were characterized by field-emission scanning electron microscope. Results show that ZnO flakes geometrically matched with CNTs by filling into the interspaces of CNTs or directly covering upon CNTs. The field emission characteristics of films are found to be greatly effected by ZnO nano-grains. Especially, the turn-on electric field of ZnO-CNT film (1.17 V/μm) which is far lower than that of usual CNT films (1.70 V/μm). Furthermore, except that better emission stability is achieved, brightness and emission uniformity are notably enhanced as well. It can be speculated that the special microstructures of ZnO mixed CNT films dominate the enhanced electrical conductivity, thermal conductivity, and effective emitters.     

Electric field enhancement in field-emission cathodes based on carbon nanotubes

The problem of determining the field enhancement factor in field-emission cathodes based on carbon nanotubes (CNTs) is considered. The electrostatic problem of finding the field enhancement factor for nanotubes with different shapes of the tip as a function of the angle the nanotube makes with the cathode surface and of the interelectrode spacing is solved. The dependence of the electric field enhancement factor on the spacing between vertically oriented nanotubes constituting an array is derived. Making allowance for this dependence gives an optimal value of the surface density of nanotubes in the array at which the emission current density is maximal. The I—V characteristic of CNT-based cathodes is studied with regard to the statistical straggling of their orientation angles. This I—V characteristic is compared with the characteristic obtained with regard to the statistical straggling of the CNT geometrical parameters.     

Nanoelectronic Devices Based on Carbon Nanotubes

We review the state-of-the-art in the carbon nanotube (CNT) electronics. The emphasis is made on actually created devices. The history of discovery of fullerenes is outlined and their properties are considered. Experimental discovery of nanotubes and nanotube synthesis technologies are reviewed. The CNT conductivity dependence on the geometrical structure of nanotubes is discussed. Various nanoelectronic CNT devices, such as nanowires, heterojunctions, diodes, and field-effect transistors are presented. Quantum properties of CNTs at low temperatures are discussed. CNT-based mechanical devices, memory elements, and switches are considered. Field emission properties of CNTs are analyzed. The data on the developed CNT-based light-emitting elements and the manufactured pre-production models of CNT flat-panel displays are given.