Structural, electronic and magnetic properties of Mn, Co, Ni in Gen for (n=1-13)

The structural, electronic and magnetic properties of TMGe_n (TM=Mn, Co, Ni; n=1-13) have been investigated using spin polarized density functional theory. The transition metal (TM) atom prefers to occupy surface positions for n<9 and endohedral positions for n≥9. The critical size of the cluster to form endohedral complexes is at n=9, 10 and 11 for Mn, Co and Ni respectively. The binding energy of TMGe_n clusters increases with increase in cluster size. The Ni doped Ge_n clusters have shown higher stability as compared to Mn and Co doped Ge_n clusters. The HOMO-LUMO gap for spin up and down electronic states of Ge_n clusters is found to change significantly on TM doping. The magnetic moment in TMGe_n is introduced due to the presence of TM. The magnetic moment is mainly localized at the TM site and neighbouring Ge atoms. The magnetic moment is quenched in NiGe_n clusters for all n except for n=2, 4 and 8.     

Doping level and environment dependence of structural stability and magnetic properties in Mn-doped WS2 bilayer in first principles

We carried out first-principles electronic structure calculation to study the structural stability and magnetic properties of Mn-doped WS₂ ultra-thin films within the density functional theory. Adopting various configurations of Mn doping into WS₂ bilayer, we find that the magnetic phase can be manipulated among the ferromagnetic, antiferromagnetic, or ferrimagnetic phases by altering doping level and growth environment. Magnetic phase and strength are determined by magnetic coupling of Mn dopants 3d electrons which can be attributed crucially to the exchange interaction mediated by neighboring S atoms 3p electrons. Accompanying to the magnetic phase transition, the electronic structure reveals that transport properties switch from semiconducting with various bandgap to half-metallic states. This result implicates possible way to develop magnetic semiconductors based on Mn doped 2D WS₂ ultra-thin films for spintronics applications.     

The influence of 3d transition metal substitution on the magnetic properties of MnGaGe

A study has been made of the effect of 3d transition element substitution on the magnetic moment and Curie temperature of MnGaGe. Substitution of 3d elements with atomic number less than Mn (i.e. Ti, V, or Cr) cause relatively small changes in magnetic properties, whereas substitution of Fe, Co, Ni and Cu cause a large reduction in moment and Curie temperature, e.g. substitution of 5 at.% Fe for Mn causes the moment to decrease by 30 per cent. The moment and ferromagnetism of MnGaGe are described in terms of a band model involving both strongly correlated and intinerant 3d electrons. The effect of 3d element substitution may be qualitatively understood in terms of this model.     

Defect energetics and magnetic properties of 3d-transition-metal-doped topological crystalline insulator SnTe

The introduction of magnetism in SnTe-class topological crystalline insulators is a challenging subject with great importance in the quantum device applications. Based on the first-principles calculations, we have studied the defect energetics and magnetic properties of 3d transition-metal (TM)-doped SnTe. We find that the doped TM atoms prefer to stay in the neutral states and have comparatively high formation energies, suggesting that the uniform TMdoping in SnTe with a higher concentration will be difficult unless clustering. In the dilute doping regime, all the magnetic TMatoms are in the high-spin states, indicating that the spin splitting energy of 3d TM is stronger than the crystal splitting energy of the SnTe ligand. Importantly, Mn-doped SnTe has relatively low defect formation energy, largest local magnetic moment, and no defect levels in the bulk gap, suggesting that Mn is a promising magnetic dopant to realize the magnetic order for the theoretically-proposed large-Chern-number quantum anomalous Hall effect (QAHE) in SnTe.     

First-Principles Study of Magnetic Properties of TM_(13) and TM_(13)@Au_(32) Clusters(TM = Mn,Co)

The structural and magnetic properties of TM_(13 )and TM_(13)@Au_(32 )clusters(TM=Mn,Co)are studied by firstprinciples calculations.We find that the Au_(32 )cluster can tune not only the magnetic moment but also the magnetic coupling properties between the TM atoms of the TM cluster.The Au_(32 )cluster can increase the net magnetic moment of Mn_(13 )clusters while reducing that of Co_(13 )clusters.The interaction between Au and Mn atoms induces more Mn atoms to form spin parallel coupling,resulting in an increase of the total magnetic moment of Mn_(13 )clusters,while for the Co_(13 )clusters,the interaction between Au and Co atoms does not change the magnetic coupling states between the Co atoms,but reduces the magnetic moment of the Co atoms,leading to a decrease of the total magnetic moment of this system.Our findings indicate that the encapsulation of Au_(32 )clusters can not only raise the chemical stability of TM clusters,but also can tune their magnetic coupling properties and magnetic moment,which enables such systems to be widely applied in fields of spintronics and medical science.     

Ab initio investigation of local magnetic structures around substitutional 3d transition metal impurities at cation sites in III-V and II-VI semiconductors

The local magnetic structures around substitutional 3d transition metal impurities at cation sites in zinc blende structures of III-V (GaN, GaAs) and II-VI (ZnTe) semiconductors are investigated by using a spin-polarized density functional theory. We find that Cr-, Co-, Cu-doped GaN, Cr-, Mn-doped GaAs and Cr-, Fe-, Ni-doped ZnTe are half metallic with 100% spin polarization. The magnetic moments due to these 3d transition metal (TM) ions are delocalized quite significantly on the surrounding ions of host semiconductors. These doped TM ions have long range interactions mediated through the induced magnetic moments in anions and cations of host semiconductors. For low impurity concentrations Mn in GaAs also has zero magnetic moment state due to Jahn-Teller structural distortions. Based upon half metallic character and delocalization of magnetic moments in the anions and cations of host semiconductors these above mentioned 3d TM-doped GaN, GaAs and ZnTe seem to be good candidates for spintronic applications.     

Electronic structure and magnetic properties of metastable SmCo<Subscript>7</Subscript> compound

The electronic density of states, spin-splittings and atomic magnetic moments of SmCO₇-compound have been studied using spin-polarized MS-Xα method. The results show that a few of electrons are transferred to Sm(5d⁰) orbital because of orbital hybridization between Sm and Co atoms in the compound. The exchange interactions between 3d and 5d electrons lead to the magnetic coupling between Sm and Co, and therefore, result in the long-range ferromagnetic order inside the SmCo₇ compound. There are negative exchange couplings occurring at some levels, which weakens the strength of average coupling around Co lattice. So, the Curie temperature and Co-moment of SmCo₇-decrease distinctly compared with pure Co. Compared with SmCo₅ compound, the disordered substitution of Co-Co “dumbbell-atom” pairs for Sm changes the local environment of Co lattice, which makes the 2e site bear negative magnetic moment. The strength of hybridization near Fermi level weakens and the free energy of the compound increases obviously. Thus, SmCo₇ is a metastable compound at room temperature. Considering the localization of 4f electrons and a few of 5d electrons arising from the orbital hybridization, the magnetic moment of Sm atom will be 1.61μ_B in SmCo₇ compound, which is in agreement with the experimental values of Sm³⁺ ion-moment and Sm atom-moment in metals.     

Structural,electronic, and magnetic properties of transition metal doped ReS<Subscript>2</Subscript> monolayer

Magnetic properties of transition-metal (TM) atoms (TM = Co, Cu, Mn, Fe, and Ni) doped ReS₂ monolayer are investigated by ab initio calculations. It is found that magnetism appears in the cases of Co, Fe, and Ni. Among all the samples, the Co-doped system has the largest magnetic moment. Therefore, we further study the interaction in the two-Co-doped system. Our results show that the interaction between two Co atoms is always ferromagnetic (FM), but such FM interaction is obviously depressed by the increasing Co–Co distance, which is well described by a simple Heisenberg model based on the Zener theory. Our results provide useful insight for promising applications of TM-doped ReS₂ monolayer in the future.     

FLAPW-GGA calculations of the influence of Mn, Fe, and Co impurities on the electronic and magnetic properties of layered oxychalcogenides LaCuSO and LaCuSeO

The electronic and magnetic properties of oxychalcogenides LaCuSO and LaCuSeO with a layered ZrCuSiAs-type structure doped with impurity atoms M = Mn, Fe, and Co have been predicted using the first-principles FLAPW-GGA method. It has been shown that a partial substitution of 3d ^{n < 9} metal atoms for copper atoms in the structure of the initial matrix leads to the transition of the oxychalcogenides (nonmagnetic semiconductors) to the state of a magnetic half-metal with 100% spin polarization of near-Fermi electrons. In this case, the magnetic and conducting properties of the LaCu_{1 ? x} M _x S(Se)O systems are determined by the states of the [Cu₂(S,Se)₂] blocks with magnetic impurities separated by nonmagnetic semiconducting [La₂O₂] blocks.     

First-principles study on the magnetic properties of transition-metal atoms doped (ZnS)12 cluster

A first-principles density functional investigation has been performed to evaluate the structural, electronic, and magnetic properties of (ZnS)₁₂ doped with one or two transition-metal (TM) atoms (Fe, Co, and Ni). Substitutional- and interstitial-doping are considered. The substitutional isomers are found to be most favorable for Fe-doped clusters, while the interstitial isomers are found to be most favorable for Co- and Ni-doped clusters. Magnetic coupling between the TM atoms at the nearest neighbor position is mainly governed by the competition between direct ferromagnetic and antiferromagnetic interactions between two TM atoms via the S atom due to strong p-d hybridization. The coupling is short-ranged. Most importantly, we demonstrate that the Fe and Ni endohedral bi-doped (ZnS)₁₂ clusters favor the ferromagnetic state, which has potential applications in nanoscale quantum devices.     

Electronic structures,magnetic properties and band alignments of 3d transition metal atoms doped monolayer MoS2

Utilizing first-principles calculations, the electronic structures, magnetic properties and band alignments of monolayer MoS₂ doped by 3d transition metal atoms have been investigated. It is found that in V, Cr, Mn, Fe-doped monolayers, the nearest neighboring S atoms (S_NN) are antiferromagnetically polarized with the doped atoms. While in Co, Ni, Cu, Zn-doped systems, the S_NN are ferromagnetically coupled with the doped atoms. Moreover, the nearest neighboring Mo atoms also demonstrate spin polarization. Compared with pristine monolayer MoS₂, little change is found for the band edges' positions in the doped systems. The Fermi level is located in the spin-polarized impurity bands, implying a half-metallic state. These results provide fundamental insights for doped monolayer MoS₂ applying in spintronic, optoelectronic and electronic devices.     

化合物SmCo5的电子结构、自旋和轨道磁矩及其交换作用分析

用自旋极化的MS-Xα方法研究了稀土-过渡族化合物SmCo5₅的电子态密度、自 旋能级劈裂及原子磁矩.研究结果显示，由于化合物中Sm-Co间的轨道杂化效应，使Sm原子原来的5d00空轨道上占据了少量5d电子.由于Co(3d)-Sm(5d)电子间的直接交换作用，导致了Sm-Co间的磁性交换耦合，这是化合物中形成Sm-Co铁磁性长程序的一个重要原因.在SmCo5_{5化合物中存在6个能级呈现负交换耦合，导致了SmCo55化 关键词： 电子结构 自旋极化 原子磁矩 交换耦合}     

Ab initio study of magnetic properties in the adsorption of transition-metal atoms on arsenene

The magnetic properties of adsorption of different transition-metal (TM) atoms (Co, Cu, Mn, Fe, and Ni) on arsenene are investigated using density functional theory (DFT). Magnetism appears in the cases of Co, Mn, and Fe. Among all the magnetic cases, the TM atom prefers the same adsorption site. Then, we further study the interaction in two-TM-adsorbed system and different magnetic states are observed. Our results show that both nonmagnetic and ferromagnetic states exist in two-Co-adsorbed system and the p-d hybridization mechanism results in its ferromagnetic state. However, for two Mn and two Fe adsorbed systems, an AFM interaction is found, which could be reasonably explained by the superexchange mechanism. Such multiple magnetic properties may suggest promising applications of TM-adsorbed arsenene in the future.     

TM掺杂的Ⅲ-Ⅴ族稀磁半导体电磁性质的第一原理计算

使用基于自旋局域密度泛函理论的第一性原理方法对3d过渡金属(TM=V，Cr，Mn，Fe，Co和Ni)掺杂的Ⅲ-Ⅴ族半导体(GaAs和GaP)的电磁性质进行了计算.结果发现：用V，Cr和Mn掺杂时体系将出现铁磁状态，而Fe掺杂时将出现反铁磁状态，Co和Ni掺杂时，其磁性则不稳定.其中，Cr掺杂的GaAs和GaP将可能是具有较高居里温度的稀磁半导体(DMS).在这些DMS系统中，V离子的磁矩大于理论期待值，Fe，Co和Ni离子的磁矩小于理论期待值，Cr和Mn离子的磁矩与期待值的差距取决于晶体的对称性以及磁性离子的能带分布.此外，使用Si和Mn共同对Ⅲ-Ⅴ族半导体进行掺杂，将有利于DMS表现为铁磁状态，并可以使体系的T_C进一步提高. 关键词： 稀磁半导体 过渡金属 掺杂 共掺杂     

Electronic structure and magnetic properties of substitutional transition-metal atoms in GaN nanotubes

The electronic structure and magnetic properties of the transition-metal(TM) atoms(Sc–Zn, Pt and Au) doped zigzag GaN single-walled nanotubes(NTs) are investigated using first-principles spin-polarized density functional calculations. Our results show that the bindings of all TM atoms are stable with the binding energy in the range of 6–16 eV. The Sc- and V-doped GaN NTs exhibit a nonmagnetic behavior. The GaN NTs doped with Ti, Mn, Ni, Cu and Pt are antiferromagnetic. On the contrary, the Cr-, Fe-, Co-, Zn- and Au-doped GaN NTs show the ferromagnetic characteristics. The Mn- and Codoped GaN NTs induce the largest local moment of 4μB among these TM atoms. The local magnetic moment is dominated by the contribution from the substitutional TM atom and the N atoms bonded with it.     

过渡金属掺杂氧化锌团簇的物性研究

本文采用第一性原理密度泛函理论研究了过渡金属（TM）原子Cr和Fe单掺杂和双掺杂(ZnO)12团簇的结构和磁性质。我们考虑了替代掺杂和间隙掺杂。结果表明Cr 和 Fe间隙掺杂团簇结构最稳定。团簇磁矩主要来自TM原子3d态的贡献,4s 和4p 态也贡献了一小部分磁矩。由于轨道杂化,相邻的Zn和O原子上也产生少量自旋。最近邻TM原子间的磁性耦合,主要由两个TM原子之间的直接短程铁磁耦合和TM和O原子之间通过p-d杂化产生的反铁磁耦合这两种相互作用的竞争来决定。不同TM原子掺杂团簇的总磁矩与TM原子种类以及掺杂位置有关,说明在(ZnO)12团簇中掺杂不同TM原子在可调磁矩的磁性材料的领域有潜在应用价值。     

Band structure calculations for Heusler phase Co2YBi and half-Heusler phase CoYBi (Y=Mn, Cr)

We have studied the electron structure and magnetic properties of Heusler phase Co₂YBi and half-Heusler phase CoYBi (Y=Mn, Cr) by using the full-potential linearized-augmented plane-wave (FLAPW) method. Co₂MnBi and Co₂CrBi are predicted to be half-metallic magnetism with a total magnetic moment of 6 and 5 μ_B, respectively, well consistent with the Slater-Pauling rule. We also predict CoMnBi to be half-metallic magnetism with a slight compression. The gap origin for Co₂MnBi and Co₂CrBi is due to the 3d electron splitting of Mn (Cr) and Co atoms, and the gap width depends on Co electron splitting. The atom coordination surroundings have a great influence on the electron structure, and consequently the Y site in the X₂YZ structure has a more remarkable electron splitting than the X site due to the more symmetric surroundings. The investigation regarding the lattice constant dependence of magnetic moment shows that the Co magnetic moment exhibits an opposite behavior with the change of the lattice constant for Heusler and half-Heusler alloys, consequently leading to the different variation trends for total magnetic moment. The variation of total and atom magnetic moment versus lattice constant can be explained by the extent of 3d electron splitting and localization of Mn (Cr) and Co atoms for both the series of alloys.