Charge density wave states in phase-engineered monolayer VTe2

Charge density wave (CDW) strongly affects the electronic properties of two-dimensional (2D) materials and can be tuned by phase engineering. Among 2D transitional metal dichalcogenides (TMDs), VTe$_{2}$ was predicted to require small energy for its phase transition and shows unexpected CDW states in its T-phase. However, the CDW state of H-VTe$_{2}$ has been barely reported. Here, we investigate the CDW states in monolayer (ML) H-VTe$_{2}$, induced by phase-engineering from T-phase VTe$_{2}$. The phase transition between T- and H-VTe$_{2}$ is revealed with x-ray photoelectron spectroscopy (XPS) and scanning transmission electron microscopy (STEM) measurements. For H-VTe$_{2}$, scanning tunneling microscope (STM) and low-energy electron diffraction (LEED) results show a robust $2\sqrt 3 \times 2\sqrt 3 $ CDW superlattice with a transition temperature above 450 K. Our findings provide a promising way for manipulating the CDWs in 2D materials and show great potential in its application of nanoelectronics.     

First-principles study on the effect of Hf content onmartensitic transformation temperatureof TiNiHf alloy

In this paper a first-principles study of the electronic structure and stability of B2 TiDFT TiNiHf 电子结构 马氏体转化温度 平面波DFT, TiNiHf, electronic structure, martensitic transformation temperatureProject supported by the National Natural Science Foundation of China (Grant No 50471018).3/3/2006 12:00:00 AM6/7/2006 12:00:00 AMIn this paper a first-principles study of the electronic structure and stability of B2 Ti1-xNiHfx （x = 0.2, 0.4, 0.6） and B19′ Ti1-xNiHfx（x = 0, 0.5） alloys is presented. The calculations are performed by the plane-wave pseudopotential method in the framework of the density functional theory with the generalized gradient approximation. This paper calculates the lattice parameters, density of states, charge density, and heats of formation. The results show that the electronic structure and stability of B2 Ti1-xNiHfx change gradually with Hf content. However, Hf content has little effect on the electronic structure and stability of B19′ Ti1-xNiHfx. The mechanism of the effect of Hf content on martensitic transformation temperature of TiNiHf alloys is studied from the electronic structure.     

Research of the behaviour of O chemisorption on the (110) surface of Rhx--Pt1－x alloy

An atomic group model of the disordered binary alloy Rhx-Pt1-x has been constructed to investigate surface segregation. According to the model, we have calculated the electronic structure of the Rhx-Pt1-x alloy surface by using the recursion method when O atoms are adsorbed on the Rhx-Pt1-x （110） surface under the condition of coverage 0.5. The calculation results indicate that the chemical adsorption of O changes greatly the density of states near the Fermi level, and the surface segregation exhibits a reversal behaviour. In addition, when x 〈 0.3, the surface on which O is adsorbed displays the property of Pt; whereas when x 〉 0.3 it displays the property of Rh.     

Observation of multiple charge density wave phases in epitaxial monolayer 1T-VSe2 film

As a special order of electronic correlation induced by spatial modulation, the charge density wave (CDW) phenomena in condensed matters attract enormous research interests. Here, using scanning—tunneling microscopy in various temperatures, we discover a hidden incommensurate stripe-like CDW order besides the ($sqrt{7}$ × $sqrt{3}$) CDW phase at low-temperature of 4 K in the epitaxial monolayer 1T-VSe₂} film. Combining the variable-temperature angle-resolved photoemission spectroscopic (ARPES) measurements, we discover a two-step transition of an anisotropic CDW gap structure that consists of two parts Δ₁ and Δ₂. The gap part Δ₁ that closes around ～ 150 K is accompanied with the vanish of the ($sqrt{7}$ × $sqrt{3}$) CDW phase. While another momentum-dependent gap part Δ₂ can survive up to ～ 340 K, and is suggested to the result of the incommensurate CDW phase. This two-step transition with anisotropic gap opening and the resulted evolution in ARPES spectra are corroborated by our theoretical calculation based on a phenomenological form for the self-energy containing a two-gap structure Δ₁ + Δ₂, which suggests different forming mechanisms between the ($sqrt{7}$ × $sqrt{3}$) and the incommensurate CDW phases. Our findings provide significant information and deep understandings on the CDW phases in monolayer 1T-VSe₂} film as a two-dimensional (2D) material.     

Superconductivity in CuIr2-xAlxTe4 telluride chalcogenides

The relationship between charge-density-wave (CDW) and superconductivity (SC), two vital physical phases in condensed matter physics, has always been the focus of scientists' research over the past decades. Motivated by this research hotspot, we systematically studied the physical properties of the layered telluride chalcogenide superconductors CuIr$_{2-x}$Al$_{x}$Te$_{4}$ ($0 \leqslant x \leqslant 0.2$). Through the resistance and magnetization measurements, we found that the CDW order was destroyed by a small amount of Al doping. Meanwhile, the superconducting transition temperature ($T_{\rm c}$) kept changing with the change of doping amount and rose towards the maximum value of 2.75 K when $x=0.075$. The value of normalized specific heat jump ($\Delta C/\gamma T_{\rm c}$) for the highest $T_{\rm c}$ sample CuIr$_{1.925}$Al$_{0.075}$Te$_{4}$ was 1.53, which was larger than the BCS value of 1.43 and showed the bulk superconducting nature. In order to clearly show the relationship between SC and CDW states, we propose a phase diagram of $T_{\rm c}$ vs. doping content.     

Evolution from Unconventional Spin Density Wave to Superconductivity and a Pseudogaplike Phase in NaFe_{1-x}Co_{x}As

We report the doping, temperature, and spatial evolutions of the electronic structure of NaFe_{1-x}Co_{x}As studied by scanning tunneling microscopy. In the parent state we directly observe the spin density wave gap, which exhibits unconventional features that are incompatible with simple Fermi surface nesting. The optimally doped sample has a single superconducting gap, but in the overdoped regime a novel pseudogaplike feature emerges. The pseudogaplike phase coexists with superconductivity in the ground state, persists well into the normal state, and shows strong spatial variations. The characteristics of the three distinct electronic states revealed here shed important new lights on the microscopic models for the iron-based superconductors.     

Ab initio fermi surface calculation for charge-density wave instability in transition metal oxide bronzes

The electronic structure of the charge density wave (CDW) bronze (PO2)(4)(WO3)(2m), m = 4, is determined using ab initio density functional theory. The calculation shows that the Fermi surface (FS) consists in the superposition of three one-dimensional FS's associated with three types of chains. The q dependence of the electronic response function calculated from the electronic structure quantitatively accounts for the anisotropy of the fluctuations probed by x-ray diffuse scattering. The results validate the hidden nesting mechanism proposed for the CDW transitions in this series of bronzes.     

Electronic confinement and ordering instabilities in colossal magnetoresistive bilayer manganites

We present angle-resolved photoemission studies of (La{1-z}Pr{z}){2-2x}Sr{1+2x}Mn{2}O{7} with x=0.4 and z=0.1, 0.2, and 0.4 along with density functional theory calculations and x-ray scattering data. Our results show that the bilayer splitting in the ferromagnetic metallic phase of these materials is small, if not completely absent. The charge carriers are therefore confined to a single MnO{2} layer, which in turn results in a strongly nested Fermi surface. In addition to this, the spectral function also displays clear signatures of an electronic ordering instability well below the Fermi level. The increase of the corresponding interaction strength with z and its magnitude of ～400 meV make the coupling to a bare phonon highly unlikely. Instead we conclude that fluctuating order, involving electronic and lattice degrees of freedom, causes the observed renormalization of the spectral features.     

Novel mechanism of a charge density wave in a transition metal dichalcogenide

The charge density wave (CDW) is usually associated with Fermi surfaces nesting. We here report a new CDW mechanism discovered in a 2H-structured transition metal dichalcogenide, where the two essential ingredients of the CDW are realized in very anomalous ways due to the strong-coupling nature of the electronic structure. Namely, the CDW gap is only partially open, and charge density wave vector match is fulfilled through participation of states of the large Fermi patch, while the straight Fermi surface sections have secondary or negligible contributions.     

A novel yellow emitting phosphor Dy3+, Bi3+ co-doped YVO4 potentially for white light emitting diodes

Novel Y1 x yVO4:xDy3+,yBi3+(0.01 ≤ x ≤ 0.05,0 ≤ y ≤ 0.20) phosphors for light emitting diode(LED) were successfully synthesised by solid-state reaction.The calculation results of electronic structure show that YVO4 has a direct band gap with 3 eV at G.The top of the valence band is dominated by O 2p state and the bottom of the conduction band is mainly composed of O 2p and V 3d states.An efficient yellow emission under near-ultraviolet(365 nm) excitation is observed.Compared with the pure YVO4:Dy3+ samples,the Dy3+,Bi3+ co-doped samples show a more intensive emission peak(at 574 nm) and a new broad emission band(450-770 nm),due to the 4F9/2 6H13/2 transition of Dy3+ and the emission of the VO3 4 Bi3+ complex respectively.The optimum chromaticity index of Y1 x yVO4:xDy3+,yBi3+(0.01 ≤ x ≤ 0.05,0 ≤ y ≤ 0.20) is(0.447,0.497),which indicates that YVO4:Dy3+,Bi3+ has higher colour saturation than the commercial phosphor YAG:Ce3+.The effects of concentration of Dy3+,Bi3+,electric states and the photoluminescence properties are discussed in details.     

First-principles study of electronic and optical properties in wurtzite Zn1-xCuxO

We perform a first-principles simulation to study the electronic and optical properties of wurtzite Zn1 xCuxO.The simulations are based upon the Perdew-Burke-Ernzerhof form of generalised gradient approximation within the density functional theory.Calculations are carried out in different concentrations.With increasing Cu concentration,the band gap of Zn1 xCuxO decreases due to the shift of valence band.The imaginary part of the dielectric function indicates that the optical transition between O 2p states in the highest valence band and Zn 4s states in the lowest conduction band shifts to the low energy range as the Cu concentration increases.Besides,it is shown that the insertion of Cu atom leads to redshift of the optical absorption edge.Meanwhile,the optical constants of pure ZnO and Zn0.75Cu0.25O,such as loss function,refractive index and reflectivity,are discussed.     

Stability of small Ni-Ti bimetallic clusters studied by density functional theory

The low-energy structures and the electronic and the magnetic properties of small NiNiNi$_{m}$Ti$_{n}$ clusters, lowest-energy structure, electronic and magnetic propertiesProject supported by the National Natural Science Foundation of China (Grant No.~10874039), and the Natural Science Foundation of Hebei Province of China (Grant Nos.~A2009000246 and 2009000243).3120A, 3640B, 2110K7/3/2009 12:00:00 AMThe low-energy structures and the electronic and the magnetic properties of small NiNiNi$_{m}$Ti$_{n}$ clusters, lowest-energy structure, electronic and magnetic propertiesProject supported by the National Natural Science Foundation of China (Grant No.~10874039), and the Natural Science Foundation of Hebei Province of China (Grant Nos.~A2009000246 and 2009000243).3120A, 3640B, 2110K7/3/2009 12:00:00 AMThe low-energy structures and the electronic and the magnetic properties of small Ni$_{n}$Ti$_{n}$ ($n=1$--$6$) and Ni$_{m}$Ti$_{n}$ ($1 \le n \le 4$, $1 \le m \le 4$, $n \ne m$) clusters are investigated by performing all-electron calculations based on density functional theory. Ground states and several isomers near the ground states are determined for these clusters. The results indicate that the growth of small Ni$_{m}$Ti$_{n}$ clusters prefers to form rich Ti--Ni and Ti--Ti bonds. When the percentage of titanium atoms is significantly greater than that of nickel atoms, the nickel atoms are most frequently found above the surface; in contrast, the titanium atoms prefer the bridging sites. A M\"{u}lliken spin population analysis indicates that the total spin of titanium-nickel clusters is not always zero.http://cpb.iphy.ac.cn/CN/10.1088/1674-1056/19/4/043102https://cpb.iphy.ac.cn/CN/article/downloadArticleFile.do?attachType=PDF&id=111644NimTin;clusters;lowest-energy;structure;electronic;and;magnetic;propertiesThe low-energy structures and the electronic and the magnetic properties of small Nin Tin(n = 1-6) and Ni m Ti n(1 ≤ n ≤ 4,1 ≤ m ≤ 4,n ≠ m) clusters are investigated by performing all-electron calculations based on density functional theory.Ground states and several isomers near the ground states are determined for these clusters.The results indicate that the growth of small Ni m Ti n clusters prefers to form rich Ti-Ni and Ti-Ti bonds.When the percentage of titanium atoms is significantly greater than that of nickel atoms,the nickel atoms are most frequently found above the surface;in contrast,the titanium atoms prefer the bridging sites.A Mu¨lliken spin population analysis indicates that the total spin of titanium-nickel clusters is not always zero.     

BiOCl{001}表面原子与电子结构的第一性原理研究

基于密度泛函理论的第一性原理方法研究了BiOCl{001}的三种不同终端面({001}-1Cl, {001}-BiO 和{001}-2Cl)的表面弛豫、能带结构、电子态密度和表面能. 计算结果表明: {001}-1Cl, {001}-BiO和{001}-2Cl表面均发生明显弛豫, 而在双Cl原子层处的层间距变化较大, 但未出现振荡弛豫现象, 其中{001}-1Cl表面弛豫较小. 与体相BiOCl电子结构相比, BiOCl{001}面具有较窄的带隙宽度, 并呈现较强局域性:对于{001}-BiO表面, 其导带与价带均往低能方向发生较大移动, 并且在导带底部出现表面态; 而{001}-2Cl表面的表面态主要出现在价带顶; {001}-1Cl表面的带隙中则无表面态产生; 表面态的出现导致{001}-BiO面和{001}-2Cl面带隙明显减小. BiOCl{001}三种终端表面的表面能分析结果表明, {001}-1Cl表面的表面能最小(0.09206 J·m^-2), 结构最稳定, 而{001}-BiO表面和{001}-2Cl表面的表面能分别为2.392和2.461 J·m^-2. 理论预测{001}-BiO表面和{001}-2Cl表面具有较高的活性, 但在BiOCl晶体生长过程中不易暴露. 本文计算结果为实验获得BiOCl高活性面{001}给予了基础理论解释, 进一步为BiOCl新型光催化材料的应用研究提供理论指导. 关键词： BiOCl{001}表面 表面弛豫 表面能 第一性原理     

Anisotropic properties of TaS2

The anisotropic properties of 1T- and 2H-TaS2 axe investigated by the density functional theory within the framework of full-potential linearized augmented plane wave method. The band structures of 1T- and 2H-TaS2 exhibit anisotropic properties and the calculated electronic specific-heat coefficient γ of 2H-TaS2 accords well with the existing experimental value. The anisotropic frequency-dependent dielectric functions including the effect of the Drude term are analysed, where the ε^xx（ω） spectra corresponding to the electric field E perpendicular to the z axis show excellent agreement with the measured results except for the ε1^xx（ω） of 1T-TaS2 below the energy level of 2.6 eV which is due to the lack of the enough CDW information for reference in our calculation. Furthermore, based on the values of optical effective mass ratio P of 1T and 2H phases it is found that the anisotropy in 2H-TaS2 is stronger than that in 1T-TaS2.     

The angular magnetothermoelectric power of a charge density wave system

The angular dependence of the magnetothermopower of a charge transfer organic salt α-(ET)(2)KHg(SCN)(4) below (4 K) and above (9 K) the phase transition temperature, T(p) = 8 K, and under fields of 15 T and 25 T, below and above the 'kinkfield', has been studied. We find that for a longitudinal thermoelectric measurement both an interlayer thermopower (the Seebeck effect), S(zz), and a transverse thermopower (the Nernst effect), S(yz), exist in all three different B-T phases (the CDW (0), CDW (x) and metallic states) with large amplitude. Both thermoelectric effects display a resonant-like behavior without a sign reversal at the angles corresponding to angular magnetoresistance oscillation minima and maxima in this compound. The resonant behavior is most evident in the CDW(0) state, indicating a mechanism involving the Fermi surface nesting. Angular dependences reveal different behaviors of the thermopower and Nernst effect in the high magnetic field (CDW(x)) state.     

The effects of interstitial oxygen on superconducting electronic phases in strontium and oxygen co-doped La1.937Sr0.063CuO4＋δ

Strontium and oxygen co-doped La1.937Sr0.063CuO4＋δ superconductor with Tc≈ 40K, which is obtained by oxidizing strontium-doped starting ceramic sample La1.937Sr0.063CuO4 in NaC10 solution, is annealed under different conditions to allow interstitial oxygen to redistribute. The evolution of the intrinsic superconducting property with the oxygen redistribution is studied in detail by magnetic measurements in various fields. It is found that there occurs the electronic phase separation from the single superconducting phase with Tc ≈ 40 K into two coexisting superconducting states with values of Tc： 15 and 40K or of 15 and 35 K in this system, depending on annealing condition. Our results indicate that the 15, 35 and 40 K superconducting phases associated with the excess oxygen redistribution are all thermodynamically meta-stable intrinsic states in this Sr/O co-doped cuprate.     

First-principles investigation of BAs and BxGa1-xAs alloys

First-principles investigation of BAs and BxGa1-xAs alloys Using first-principles calculations in the generalized gradient approximation, the electronic properties of BAs and BxGa1-xAs alloys are studied. At the Brillouin-zone centre, the lowest conduction band is the three-degenerate p-like Г15c state rather than s-like Г1c state, and the conduction band minimum （CBM） is along the A line between the Г and X points-at approximately 11/14（1,0,0）2π/a. With boron content at 0%-18.75%, BxGa1-xAs alloys have a small （2.6 eV） and relatively composition-independent band-gap bowing parameter, the band-gap increases monotonically by -18meV/B% with increasing boron content. In addition, the formation enthalpies of mixing for BxGa1-xAs alloys with boron content at 6.25% and 12.5% are calculated, and the large formation enthalpies may explain the difficulty in alloying boron to GaAs.     

Absence of symmetry breaking for systems of rotors with random interactions

We prove that Gibbs states for the Hamiltonian , with thes _x varying on theN-dimensional unit sphere, obtained with nonrandom boundary conditions (in a suitable sense), are almost surely rotationally invariant if withJ _xy i.i.d. bounded random variables with zero average, 1 in one dimension, and 2 in two dimensions.     

Electronic structure and optical properties of In-doped SrTiO3 by density function theory

The effect of In doping on the electronic structure and optical properties of SrTiO3 is investigated by the first-principles calculation of plane wave ultra-soft pseudo-potential based on the density function theory （DFT）. The calculated results reveal that due to the hole doping, the Fermi level shifts into valence bands （VBs） for SrTi1-x InxO3 with x = 0.125 and the system exhibits p-type degenerate semiconductor features. It is suggested according to the density of states （DOS） of SrTi0.875In0.125O3 that the band structure of p-type SrTIO3 can be described by a rigid band model. At the same time, the DOS shifts towards high energies and the optical band gap is broadened. The wide band gap, small transition probability and weak absorption due to the low partial density of states （PDOS） of impurity in the Fermi level result in the optical transparency of the film. The optical transmittance of In doped SrTiO3 is higher than 85% in a visible region, and the transmittance improves greatly. And the cut-off wavelength shifts into a blue-light region with the increase of In doping concentration.     

Theoretical study of band gap engineering and optical absorption in InGaN/GaN superlattices with short periodicity

We have carried out a theoretical study for calculating the electronic and optical properties of \( {\text{In}}_{x} {\text{Ga}}_{1 - x} {\text{N}}/{\text{GaN}} \) (001) superlattices with short periodicity, while In composition is altered from 0 to 100 %. These appealing systems have been simulated using ab initio method in the framework of full-potential linearized augmented plane wave scheme. In this respect, a modified Becke–Johnson for the exchange and correlation potential term is included for describing adequately the energy gap of these promising low-dimensional materials. Exclusively, we computed the density of states, imaginary part of dielectric function, refractive index and absorption coefficient. However, it is viable to control the optical properties of these superlattices which may be useful for optoelectronic devices application.