“聚龙一号”装置24路模块精确控制技术

介绍了Z箍缩初级实验平台“聚龙一号”装置24路模块的精确控制技术和实验结果, 通过采用24个激光触发开关来控制24路模块的精确导通, 实现了对“聚龙一号”装置输出电流波形的精确控制和调节。24个激光触发开关由12台Nd: YAG四倍频脉冲激光器来触发, 每台激光器分光后触发2路激光开关。实验结果表明: 24路激光之间的抖动小于1.0 ns, 激光开关的抖动小于1.5 ns,“聚龙一号”装置在主Marx充电电压为65 kV时, 当24路模块同步导通时,获得负载电流9.8 MA, 电流前沿上升时间(10%~90%)为75 ns;在24路模块分时放电时,实现了对电流波形的精确调节,电流前沿上升时间(10%~90%)可以拓展到600 ns, 对应的负载电流峰值为5.5 MA,电流波形的模拟值与实验测量结果基本一致,在相同负载和实验条件下,获得的电流波形具有很好的重复性。     

Properties of monolithic integration of a resonant tunneling diode and a quantum well laser

An investigation of the electrical and optical characteristics of a resonant tunneling diode monolithically integrated with a quantum well laser is carried out. An analytic expression for the propagating model current is given in terms of the total spontaneous emission rate. The laser is pumped by the current emitted by the resonant tunneling diode. When the current in the laser exceeds the threshold current, laser light is produced. Since the current in the laser exhibits negative differential resistance similar in behavior to the current of a resonant tunneling diode, a bistable light output can be obtained from this new device.     

Characteristics of laser and current pulses in a He–SrCl2 vapor laser

An experimental investigation on the characteristics of laser and current pulses in a He–SrCl₂ vapor laser is carried out. The temporal dependences of the discharge current pulse on the laser pulses at the 1.09 μm, ～3 μm and 6.45 μm lines in strontium atoms and ions are measured and analyzed under different laser output powers. It is found that all laser pulses appear at the falling edge of the current pulse and shift forward to the current pulse with increasing laser output power.     

Capillary discharge soft X-ray lasing in Ne-like Ar pumped by low main current pulses

Under the condition of the low main current pulse, the capillary discharge soft X-ray laser is obtained. The laser energy of the same discharge current amplitude at different Ar pressures and of different current amplitudes at the same Ar pressure are compared, respectively. At different Ar pressures, the amplitude of the main current pulse evidently impacts the soft X ray, especially at a pressure higher than 30 Pa. In order to obtain the laser output at a high Ar pressure, the amplitude should be increased. However, at the same Ar pressure, it might have an optimum current, in which case the laser spike is the highest and the most stationary. The laser achieving time at different amplitudes is also discussed. As far as we know, this is the first time the influence of the amplitude of the main current pulse has been analyzed.     

大功率激光脉冲二极管触发高增益光导开关实验研究

研究了一种新型大功率激光脉冲二极管的输出特性,该激光二极管主要用于触发工作在高增益模式下的砷化镓光导开关。研制了基于射频金属-氧化物半导体场效应管的激光二极管驱动电路,可以为激光二极管提供上升沿、半高宽和峰值电流分别为4 ns,20 ns和130 A的脉冲驱动电流。研究了激光二极管输出的激光脉冲波形、能量、功率、光场分布等特性,并在Blumlein传输线结构中,研究了该大功率激光脉冲二极管的输出特性对工作于高增益模式下的光导开关的导通电阻、开关抖动等主要导通性能参数的影响规律。实验结果表明,激光脉冲的能量和功率越大,光斑面积越大、分布越均匀,在相同偏置电压条件下,光导开关的导通性能越好。     

面曝光选区激光熔化成形形状精度研究

主要研究面曝光选区激光熔化单层成形时,激光光斑搭接率和电流对形状精度的影响。实验通过控制变量法研究搭接率、曝光时间、电流等工艺参数对激光光斑、熔道、圆环、尖角等成形形状精度的影响。实验结果表明:一定范围内,电流越大,激光光斑更均匀,成形一致性更好;搭接率38.4%能够获得最低的形状误差的熔道;搭接率一定,圆环成形误差随电流的增加而增加;尖角成形误差随着电流增加,呈现先增后减的趋势;搭接率为46.1%、38.4%时,零级衍射带来的形状误差降低。     

用于低噪声DPL激光器的高稳定性LD驱动源的研制

根据高稳定性、低噪声半导体泵浦激光器(DPL激光器)对于激光电源的要求,研制了一台工作电流可达7A、集电流慢启动和过流保护等多重保护于一体的高稳定性LD驱动源,分析了其高稳定性电源的工作原理和影响电流稳定度的主要因素,得到了电流稳定度为2.0×10-4的高稳定性电流输出。以此激光电源作为高稳定性DPL激光器的LD驱动源,获得了3.5h内功率稳定性小于4‰的激光输出。     

A new design of pulsed laser diode driver system for multistate quantum key distribution

In this paper, we describe a new design of laser diode driver system based on MOSFET current mirror and digital signal controller (DSC). The system is designed to emit stream pairs of photons from three semiconductor laser diodes. The DSC is able to switch between the three laser diodes at constant rate. The duty cycle is maintained at 1% in order to reduce its thermal effect and thus prolong the laser diodes’ life cycles. The MOSFET current mirror circuits are capable of delivering constant modulation current with peak current up to 58 mA to each laser diode. This laser driver system will allow the generating biphotons automatically with qubit rate around 8-13% for μ less than or equal to 1, thus making it practical for six-states quantum key distribution implementation.     

锗硅异质结晶体管单粒子效应激光微束模拟

对国产锗硅异质结双极晶体管(SiGe HBT)进行了单粒子效应激光微束辐照试验,观测SiGe HBT单粒子效应的敏感区域,测试不同外加电压和不同激光能量下SiGe HBT集电极瞬变电流和电荷收集情况,并结合器件结构对试验结果进行分析。试验结果表明:国产SiGe HBT位于集电极/衬底结内的区域对单粒子效应敏感,波长为1064 nm的激光在能量约为1.5 nJ时诱发SiGe HBT单粒子效应,引起电流瞬变。入射激光能量增强,电流脉冲增大,电荷收集量增加;外加电压增大,电流脉冲的波峰增大;SiGe HBT的单粒子效应与外加电压大小和入射激光能量都相关,电压主要影响瞬变电流的峰值,而电荷收集量主要依赖于入射激光能量。     

On the discharge in laser plasma in an external electric field

The possibility of creating discharge in laser plasma in an external electric field with quasi-static current generation along the field is discussed. The knowledge of the quasi-static current generation mechanism in laser plasma, associated with the rarefaction shock wave (RSW), allows the determination of the spatial distribution of these currents during laser irradiation of a planar target. Having included the (planar or cylindrical) target into an external contour, we propose a discharge scheme in laser plasma, where the discharge current increases during the laser pulse.     

窄台衬底内条形半导体激光器

研制了一种新型结构双异质结半导体激光器,这种激光器是利用非平面衬底液相外延的特点,使电流阻挡层和四层双异质结构在腐蚀成窄台的衬底上一次外延完成生长,内条形电流通路在外延生长中自然形成.工艺特别简单,且具有良好线性输出和稳定基横模式振荡等特点.     

外腔半导体激光器用恒流源电路设计与实现

由于外腔半导体激光器系统中的核心部分——激光器受外界环境影响较大,在装配或工作中极易受到电压、电流和静电荷的影响而损坏.为减少由于电路不稳定产生的激光器损坏,在借鉴各种传统的恒流源电路实现方式的基础上,运用反馈恒流原理,慢启动慢关闭原理,利用场效应管特性,给出一种高准确度恒流电路实现方式.将此电路直接运用于中心波长1550 nm激光器作为驱动电路,工作稳定、输出电流受负载影响很小且输出准确度达到同行业先进水平.电流稳定达到0.01％以上.此电路实现方式简单,实用性较强,对整个电路做出了实验仿真和测试,很好地解决了由于驱动电流不稳造成的激光器损坏的问题.     

双预燃闪光灯泵浦钛宝石激光输出的实验研究

对强预燃闪光灯泵浦的钛宝石激光器进行了研究。实验采用双直流预燃电路，研究强预燃对激光输出的影响。     

可控制变频率微片激光器

 用20 W光纤耦合LD作为泵浦光源，对Nd^{3+sup>:YVO_{4/sub>微片进行了增益开关实验，获得了可控制变重复频率（1 Hz～25 kHz）的调Q激光输出。输出脉冲激光的宽度为16 ns，输出的峰值功率在几W。从速率方程出发进行了增益开关理论研究，通过数值解，分析了输出激光特性：当泵浦电流高于产生单脉冲的电流时，增加泵浦电流将在一个泵浦脉宽中出现多个激光脉冲输出；增加泵浦脉宽，将在一个泵浦脉宽中出现多个激光脉冲输出，泵浦脉宽越大，子脉冲个数越多；当增加重复频率时，输出与泵浦激光重复频率完全一致的激光脉冲，但也将在一个泵浦脉宽中出现多个激光脉冲输出。}}     

基于光场离化电流机制产生强太赫兹辐射的参数优化研究

基于超短激光脉冲与气体作用通过光场离化电流产生太赫兹(THz)辐射的模型, 研究了用双色激光脉冲的方法产生强THz辐射的优化参数条件. 数值计算表明, 导致THz辐射产生的离化电流主要是由一阶电离过程产生的, 高阶离化对该电流产生的贡献很小. 通过调节基频光与倍频光的配比、相位差都能增大离化电流, 从而可以提高THz辐射振幅. 将激光波长拓展到中红外波段, 也有利于提高离化电流. 此外,改变作用气体的种类也能改变离化电流. 在激光和密度参数相等的情况下, 在氦气中可以产生高于氮气中2倍左右的离化电流.     

Suppression of laser noise in CW 337μm HCN lasers

In a d.c.-discharge-excited 337 μm HCN laser, amplitude laser noise has been observed at the frequency range of 30 kHz to 1 MHz. The laser noise is classified into three types; oscillation noise having sharp peaks, broadly distributed noise having a center frequency and 1/f-noise. Characteristics of the laser noise have been studied experimentally. The laser noise is caused by small oscillation which appears on d.c.-discharge current and by random fluctuations of current and plasma density. The laser noise has been suppressed more than 30 dB by adjusting the laser parameters such as discharge current, pressure and flow rates of mixed gas (CH4₄ + N₂ + He) and added He.     

干涉测量用半导体激光器驱动电源

设计了一种可调制的高稳定度半导体激光器驱动电路。该电路的直流稳定度高达1.5×10-5，输出电流在0～200mA内连续可调，长时间工作（12h以上）电流变化小于1μA；在直流基础上注入100kHz～300kHz的调制电流，其调制深度为0～100mA连续可调，可实现在激光干涉测量中对光波频率和光波强度的调制。将该电路驱动的光栅外腔半导体激光器和辅助温度控制电路应用于光干涉测量技术中，得到了功率稳定、波长单一的激光输出，解决了激光器的跳模现象，完成了对远距离微小振动（纳米量级）的测量。     

Effect of normal and reversed polarizations on optical characteristics of ultraviolet-violet InGaN laser diodes

The optical characteristics of ultraviolet-violet InGaN laser diodes with different numbers of quantum wells under normal and reversed polarizations are numerically investigated. For the laser structures under normal polarization, the lowest threshold current is obtained when the number of quantum wells is two in the spectral range of 380-408 nm. For the laser structures under reversed polarization, the single quantum-well laser structure possesses the lowest threshold current. The simulation results suggest that the physical origin for these phenomena is caused by the sufficiently suppressed electron and hole leakage currents when the laser diode is under reversed polarization.     

基于PSpice的半导体激光高频调制系统设计

为了实现高频率的调制激光输出,设计了一种驱动系统由信号放大、电流调制、过流保护和具有慢启动功能的直流偏置电路高度集成的半导体激光高频调制系统。此系统采用了结构简单的直接调制方式,运用线性调频的高频信号去控制半导体激光器发射激光的强度,从而实现高频调制。在运用OrCAD/PSpice对高频调制驱动系统进行模拟仿真的基础上,最终研制出的半导体激光高频调制系统实现了频率为40.02 MHz、直流偏置为493.326 mA、正弦波调制电流峰峰值为850 mA的高频调制输出,调制激光平均功率为300 mW。     

Influence of Z-pinch evolution on laser pulse duration at 46.9 nm in Ne-like Ar ions

A capillary discharge 46.9 nm Ne-like Ar laser is achieved with peak current of 20–23 kA. The variation of laser pulse duration with initial Ar pressure and rise-time of main current is reported. Measurements show that the laser pulse durations slightly increase with the increased pressure and increased rise-time of current. A comparison of the experimental results with the calculation of snow-plow model indicates that the increase of laser pulse duration is the result of decreased Z-pinch velocity at the pinch time when the radius of plasma is minimal.