用于微波滤波器的Tl2Ba2CaCu2O8超导薄膜

本文报导用磁控离子溅射和后热处理方法在LaAlO3(001)衬底上制作2英寸双面Tl2Ba2CaCu2O8(Tl-2212) 超导薄膜的方法和薄膜的特性.XRD测试表明薄膜具有纯的Tl-2212相和c轴垂直于膜面的织构.衬底两侧薄膜的结晶形貌和超导电性均匀,超导转变温度Tc一般为105 K左右,液氮温度下临界电流密度Jc>2×106A/cm2,10GHz频率下表面电阻最小达到350μΩ,可满足超导微波滤波器实用的需要.     

Tl2Ba2CaCu2O8薄膜高温超导滤波器研制

开发了一种基于模型的高温超导滤波器仿真设计方法和一种紧凑的组群式G型谐振器结构,研制出了用于WCDMA系统上的带宽为20MHz中心频率为1950MHz的8阶高温超导滤波器.该滤波器由Tl2Ba2CaCu2O8薄膜制作而成,制作在LaAlO_3衬底上,尺寸大小仅为26mm×18mm.实测结果显示滤波器的最小插入损耗为0.25dB,带外抑制大于70dB,回波损耗好于-16dB,实测的滤波器带宽、中心频率以及边带陡峭度也与仿真设计结果吻合很好,验证了设计方法和制作工艺的准确性.     

67Cu(67Zn) Mössbauer emission spectroscopy of Tl2Ba2CuO6 and Tl2Ba2CaCu2O8

The parameters of the crystal electric-field gradient at the copper sites of Tl₂Ba₂CuO₆ and Tl₂Ba₂CaCu₂O₈ have been determined by Mössbauer emission spectroscopy using the ⁶⁷Cu(⁶⁷Zn) isotope, and calculated in the point-charge approximation. The results obtained are analyzed using the available ⁶³Cu nuclear quadrupole resonance data. The experimental and calculated data can be brought in agreement if one assumes that the holes appearing after part of the thallium atoms lower their valency become localized primarily at the oxygen sites lying in the plane of the copper ions.     

Current-voltage characteristics of voltage-biased Tl2Ba2CaCu2O8 intrinsic Josephson junctions

The voltage-biased current-voltage (I–V) characteristics of intrinsic Josephson junctions (IJJs), which are fabricated with misaligned high temperature superconducting Tl₂Ba₂CaCu₂O₈ (Tl-2212) thin film, are investigated experimentally. Three characteristic regions in the I–V curve are observed at 47 K. In the low voltage part, the current firstly increases and then decreases slowly with increasing the biased voltage, which is shown as a bump. In the next region, the current slightly increases with increasing the biased voltage until a sudden decrease of the current appears. Thereafter, branch structure forms with increasing the voltage on the I–V characteristic. The influence of the self-heating on the I–V characteristics is investigated and the temperature dependence of the I–V characteristics is measured to explore these characteristics in detail.     

在RABiTS基带上制备Tl-2212超导薄膜

我们研究了Tl-2212超导薄膜在带有YSZ/CeO2缓冲层和带有CeO2/YSZ/CeO2缓冲层的Ni金属RABiTS基带上的生长情况.基带上的缓冲层是采用PLD方法制备的,Tl-2212薄膜的制备采用了磁控溅射和后热处理两步方法.XRD 实验结果表明,Tl-2212薄膜都具有很好的c轴垂直于膜面的织构,并具有双向外延生长特性.在CeO2/YSZ/CeO2/Ni基带上制作的Tl-2212薄膜的Tc达到102.8 K,Jc(77K,0T)达到2.6 MA/cm2;在YSZ/CeO2/Ni基带上薄膜的Tc可达97.7K,Jc (77K,0T)也可以达到0.45MA/cm2.     

Anisotropy of the mixed-state resistance of Tl2Ba2CaCu2O8 single crystals

The electrical resistance of single crystals of the high-temperature superconductor Tl₂Ba₂CaCu₂O₈ has been measured as a function of the angle θ between the direction of the magnetic field and the current-carrying CuO₂-planes. The resistance is maximal for θ = 90° ( B ?CuO₂-planes) and decreases to a minimum at θ = 0°. For small angles an anomalous enhancement of the resistance is found. While the general shape of the resistance is generated by the motion of “pancake vortices” in the CuO₂-planes, the anomaly is due to “Josephson vortices” moving perpendicular to the planes.     

在RABiTS基带上制备Tl-2212超导薄膜

我们研究了Tl-2212超导薄膜在带有YSZ／CeO2缓冲层和带有CeO2／YSZ／CeO2缓冲层的Ni金属RABiTS基带上的生长情况．基带上的缓冲层是采用PLD方法制备的，Tl-2212薄膜的制备采用了磁控溅射和后热处理两步方法．XRD实验结果表明，Tl-2212薄膜都具有很好的c轴垂直于膜面的织构，并具有双向外延生长特性．在CeO2／YSZ／CeO2／Ni基带上制作的Tl-2212薄膜的Tc达到102．8K，Jc（77K，0T）达到2．6MA／cm^2；在YSZ／CeO2／Ni基带上薄膜的Tc可达97．7K，Jc（77K，0T）也可以达到0．45MA／cm^2．     

FAR-INFRARED AND INFRARED REFLECTIONS OF Tl2Ba2Ca2Cu3O10 FILM

The far-infrared and infrared reflection spectra of Tl₂Ba₂Ca₂Cu₃O₁₀ superconducting film are reported in this paper. It is found there are three sharp reflection edges in both the superconducting and normal states, their positions being near ≈ 150, ≈ 350 and ≈600 cm^-1. We attribute these reflection spectra to the Drude free carriers and a wide mid-infrared absorption band. When the incident angle increases from 7° to 30°, some additional stractures appear in the refiection spectra, which are the A_2u phonon modes vibrating along c-axis.     

Infrared reflectance spectra and optical conductivity of Tl2CaBa2Cu2O8 and Tl2Ca2Ba2Cu3O10 superconducting thin film samples

Films of the Tl₂CaBa₂Cu₂O₈ (Tl2122 phase) and Tl₂Ca₂Ba₂Cu₃O₁₀ (Tl2223 phase) superconductors were prepared by d.c. magnetron sputtering method. Their C-axes were perpendicular to the surface. We measured their infrared (IR) reflectivity spectra and assignments of the phonon oscillators were made. The optical conductivity of Tl2122 and Tl2223 phases in the normal state have been obtained from measurements of the reflectivity over a wide frequency range. The position of the plasma peak is tentatively determined.     

Tl2Ba2Ca2Cu3O10的化学键性质和同质异能位移研究

在Tl2Ba2Can-1CunO2n 4(n=1,2,3,4)系列超导性氧化物中,Tl2Ba2Ca2Cu3O10具有最高Tc值(125 K)．利用电介质的平均能带模型计算了Tl2Ba2Ca2Cu3O10的局域化学键参数,得到Cu(1)-O键的共价性为0．561,Cu(2)-O键的平均共价性为0．296．应用化学环境因子计算了57Fe在Tl2Ba2Ca2Cu3O10中的穆斯堡尔同质异能位移,证实了57Fe在低掺杂时以Fe3 和Fe4 离子形式占据Cu(1)位置,而在高掺杂时以Fe3 和Fe4 离子形式分别占据Cu(1)和Cu(2)位置．结果表明,化学键理论计算有助于复杂晶体的穆斯堡尔谱的正确分析．     

在MgO衬底上制作Tl2Ba2CaCu2O8超导薄膜

在MgO衬底上,利用共蒸发方法制备DyBa2Cu3O7作为缓冲层,再利用磁控溅射和后处理方法,制备了Tl2Ba2CaCu2O8超导薄膜.X射线衍射θ～2θ及φ扫描结果表明Tl-2212薄膜、Dy-123薄膜与衬底MgO呈外延生长关系.制备的Tl-2212薄膜Tc＝105.5K,液氮温度下临界电流密度Jc＝2.5×106A/cm2.