退火处理对ZnO薄膜发光特性的影响

用脉冲激光沉积法(PLD)在MgO(100)、α-Al2O3(0001)和MgAl2O4(111)衬底上沉积了ZnO薄膜,测量了它们的发射光谱,观察到430nm的蓝光发射,并研究了退火、衬底和激发波长对ZnO薄膜这一蓝光发射的影响.指出ZnO薄膜中430nm的蓝光发射是由锌填隙原子缺陷能级到价带顶能级间的跃迁以及电子从氧空位浅施主能级到价带顶能级间的跃迁两种机理共同作用的结果.在MgO衬底上沉积的ZnO薄膜在350nm光激发下蓝光发射峰最强.     

CsB_3O_5晶体潮解机理及防潮研究

三硼酸铯(CsB3O5)晶体在Nd:YAG 1064 nm激光三倍频转换方面具有优良的性能,限制该晶体器件实用化的一个重要因素是其在空气中较易潮解.本文用化学侵蚀法研究了CsB3O5晶体的潮解取向,并从晶体结构上给予了解释:由于CsB3O5晶体的B-O骨架在(010)方向存在较大的通道,水分子较易沿(010)方向进入晶体而导致晶体潮解.采用了用光学增透膜结合疏水保护膜的方法防止CsB3O5晶体潮解的技术手段,使CBO晶体器件能够在常规环境中保存及使用.     

B3O7基团型硼酸盐非线性光学晶体研究进展

以B3O7基团为基本结构单元的硼酸盐非线性光学晶体LiB3O5,CsB3O5,CsLiB6O10具有紫外透过波段宽,非线性光学系数较大,光损伤阈值高的共同特性,有利于紫外波段激光频率变换,本文综合叙述了B3O7基团型硼酸盐非线性光学晶体的研究进展。     

助熔剂法生长非线性光学晶体Cd3Zn3B4O12及其性质研究

本文以PbO-0.25B2O3为助熔剂,利用顶部籽晶法获得了较大块的Cd3Zn3B4O12单晶.透过率测试结果显示该晶体的紫外截止波长位于310 nm处.利用Kurtz-Perry的方法对晶体的倍频效应进行了测试,结果显示该晶体的粉末倍频效应约为KDP的5倍,且能实现相位匹配.晶体的光损伤阈值约为840 MW(1064 nm,10 ns).该晶体的热分析结果显示Cd3Zn3B4O12晶体在熔点温度以上会产生分解,这也是阻碍高质量大块Cd3Zn3B4O12晶体生长最主要的因素.     

K3B6O10Br非线性光学晶体的生长及性质研究

采用顶部籽晶法,KF.2H2O-PbO复合助熔剂生长K3B6O10Br晶体,获得了18 mm×18 mm×10 mm尺寸的单晶。K3B6O10Br紫外透过截止边约为210 nm,粉末倍频效应为3倍KDP,利用德拜公式计算了阴离子基团的偶极矩。采用直角棱镜法测试了晶体折射率并拟合了Sellmeier方程。计算及实验表明,K3B6O10Br能够实现532 nm及355 nm倍频输出。对晶体的激光损伤阈值、硬度及潮解性进行了测试。     

铁电铌酸钾锂晶体的生长

用电阻加热引上法生长了不开裂、全透明的具有倍频性能的铌酸钾锂(KLN)晶体.研究了影响晶体开裂的主要因素和晶体生长的稳定性.发现用引上法生长KLN晶体时,要得到全透明、不开裂的KLN晶体,熔体中Li2O的含量应该低于26.5mol;,拉速应低于0.5mm/h,以及生长过程中应该选择凸的固液界面以保证晶体生长的稳定性.在Li2O含量较高的熔体中生长KLN晶体时,[100]取向的籽晶比[001]取向的籽晶更有利于晶体生长.用由Li2O含量为26mol;的熔体中沿[100]取向生长的KLN晶体对Ti:Al2O3激光器输出的820nm的激光倍频,获得410nm的蓝光输出.     

原料的均匀性对CsB3O5晶体光学性质的影响

本文是针对紫外非线性光学晶体CsB3O5的原料处理对晶体光学质量的影响的研究报道.利用液相法合成出高度分散的原料,生长出高光学质量的CBO单晶.消除了晶体内部的光散射颗粒,并测量了该晶体的透过光谱、光学均匀性和抗激光损伤阈值.     

溶胶-凝胶法制备紫外及蓝光双截止润眼镀膜玻璃

采用溶胶-凝胶法,在3 mm厚的普白玻璃含锡面镀制镶嵌Ag纳米粒子的氧化硅薄膜,达到吸收蓝光的效果,在其非锡面镀制纤锌矿结构的氧化锌薄膜,达到阻隔紫外效果.通过双膜层的相互作用,达到对紫外和短波蓝光有效阻隔吸收,从而获得具有紫外蓝光防护及润眼功能的镀膜玻璃.研究了热处理温度和膜层厚度对近紫外和蓝光阻隔率的影响.结果表明:随着退火温度的升高,膜层更加致密,且退火温度越高,蓝光的吸收率也逐渐提高,吸收峰位红移.利用浮法玻璃本体的富锡表面还原AgNO3成Ag纳米粒子分散镶嵌在氧化硅薄膜的结构,能有效吸收380～450 nm的短波蓝光.实验样品呈现出美观的淡金黄色,且随着膜厚的增大,金黄色程度逐渐加深.以样品a为例,所制备的氧化锌膜层为稳定的纤锌矿结构,膜厚为438 nm,表面为球状颗粒,对380 nm以下的紫外光阻隔率为98.83;;所制备氧化硅薄膜厚为200 nm,表面致密,对380～450 nm的蓝光阻隔率为90.73;,样品整体450～780 nm可见光透过率为77.8;.     

980nm红外激发下氟氧化物中Er3+的上转换可见发光

制备了掺杂Er3+的氟氧化物(10ZrF4-10PbF2-10NaF-5Na2O-60SiO2)材料,测量了样品的吸收谱、上转换荧光发射谱和上转换发光强度与激光泵浦功率的对数关系.分析了Er3+的上转换可见发光机制,证实了在980nmLD的激发下,Er3+在402nm、449nm蓝光波段和520nm、551nm绿光波段的上转换荧光发射来自于4f电子的2H9/2、4F5/2、4S3/2、2H11/2激发态到基态4I15/2的跃迁,给出了2H9/2→4I15/2、4F5/2→4I15/2蓝光三光子激发态吸收(ESA)和4S3/2→4I15/2、2H11/2→4I15/2绿光双光子激发态吸收(ESA)的上转换发光机制.     

Nd∶GdVO4晶体生长及其1064nm的激光特性

本文报道了用Czochralski方法生长Nd∶GdVO4晶体,测量了该晶体的偏振吸收谱和荧光谱,表明晶体在808.5nm有吸收峰,其发射波长在1064nm.晶体中掺Nd浓度的原子分数为1.56;的Nd∶GdVO4的4F3/2荧光寿命为100μs.用激光二极管泵浦1mm厚的Nd∶GdVO4晶体,得到了超过1W 1064nm的输出光,泵浦阈值为20mW,光-光转换效率为55.9;,斜效率为63;.     

高可靠性无铝有源层808 nm半导体激光器泵浦源

针对高功率808 nm激光器泵浦源的应用需求,设计并制备了InGaAsP/GaInP材料体系的无铝有源区半导体激光器。使用双非对称的限制层及波导层结构,降低了P侧材料的热阻及光吸收。优化了金属有机化学气相沉积(MOCVD)中As和P混合材料的生长条件,制备出界面陡峭的四元InGaAsP单晶外延薄膜。制作的激光器室温测试阈值电流为1.5 A,斜率效率为1.26 W/A,10 A下的功率达到10.5 W,功率转换效率为58%。连续电流测试最大功率为23 W@24.5 A,准连续电流测试最大功率为54 W@50 A,没有产生灾变性光学损伤(COD)。在15 A电流加速老化下,激光器工作4 200 h未出现功率衰减及COD现象,说明制备的无铝有源区808 nm激光器具有高可靠性的输出性能。     

Growth of Nd:GdVO4 Single Crystal and its Laser Output at 1062 nm,1342 nm

A new liquid‐phase method synthesizing Nd:GdVO₄ polycrystalline materials was introduced. High optical quality Nd:GdVO₄ single crystals have been successfully grown by the Czochralski method. The effective segregation coefficients of Nd ion in Nd:GdVO₄ crystal have been measured and discussed. Laser outputs at 1.06 μm and at 1.34 μm were achieved when Nd:GdVO₄ crystal samples of 0.52 at% Nd concentration were pumped by a high‐power LD. A maximum output of 14.5 W at 1.06 μm has been obtained when the pump power is to 26 W, giving the slope efficiency of 63%. It is reported the first time that up to 4.64 W power laser at 1.34 μm has been achieved with optical conversion efficiency of 31.4% and slope efficiency of 32.9%.     

Photochemical vapor deposition of amorphous silicon through 185 nm excitation of monosilane

Photochemical vapor deposition of a-Si films at a high rate using SiH₄ and a 185 nm low pressure mercury lamp is described. A maximum rate of 1 nm/sec was attained using the 185 nm lamp. This rate was about ten times higher than that using a 254 nm lamp. Assuming that there is no interaction between the effects of the two wavelengths, the deposition rate per light output power of 184.9 nm light is 160 times larger than that for 253.7 nm light. The absorption cross-section of the 184.9 nm light is ten times greater than that for the 253.7 nm light.     

Effect of laser‐induced nanocrystallisation on the properties of electroless Ni‐P/Ni‐W‐P duplex coatings

This paper presents a comparative study of nanocrystallisation and the wear resistance of electroless plated Ni‐P/Ni‐W‐P duplex coatings with a single Ni‐W‐P coating before and after high‐ power diode laser treatment. Effects of the laser operating parameters on microstructures, in terms of crystallisation, porosity formation, phase transformation and grain growth, were investigated using scanning electron microscopy (SEM) with energy dispersive X‐ray spectroscopy (EDX) and quantitatively X‐ray Diffraction (XRD). Microhardness and wear behaviour of the coatings before and after laser treatment were evaluated by measurement of coating surface and cross‐section hardness as well as un‐lubricated friction and wear tests. The results revealed that in the case of laser treatment, the Ni‐P/Ni‐W‐P duplex coatings offered better wear resistance than the single Ni‐W‐P coating, while the as‐plated, single Ni‐W‐P coating showed better wear resistance than the Ni‐P/Ni‐W‐P duplex coatings. Adhesive wear mechanism prevails in the laser‐treated coatings when subjected to wear test against hardened steel material. The effects of microstructural characteristics in the coatings, in particularly the grain size of Ni₃P phase and the degree of crystallisation, on the adhesive wear behaviour have been investigated and found to be dominant besides the effect of hardness.     

多晶硅的反应离子刻蚀(R IE)制绒绒面研究

实验基于反应离子刻蚀(Reaction Ion Eatching RIE)技术进行的多晶硅片纳米绒面制备,这种结构的绒面可明显降低晶体硅电池反射率,提高电池短路电流.实验具体指将多晶硅片在同一条件混酸溶液中腐蚀去除表面损伤,然后利用RIE制绒技术进行不同尺寸纳米绒面制备,根据绒面变化分别调整工艺进行清洗及电池制备,发现绒面小到一定程度时RIE制绒过程造成的损伤不易清洗去除且抗反射SiNx膜沉积困难.所以多晶硅片RIE制绒不可单纯的追求小绒面和低反射率,实验证明纳米绒面凹坑尺寸最小应控制在240~360 nm才能更稳定地匹配清洗、沉积抗反射膜等工艺从而制备出高光电转换效率的多晶硅电池.     

MOCVD生长低阈值电流GaInP/AlGaInP650nm激光器

通过MOCVD外延实现了限制层高铝组分及高掺杂,制作出低阈值电流密度的压应变多量子阱激光器材料,后工艺制备了低阈值电流基横模弱折射率脊形波导激光器.该激光器阈值电流最低达到6.2mA,这是我们所见报道的650nm AlGaInP红光激光器的最低阈值电流. 在25mA 工作电流下,基横模连续输出功率达到18mW.     

The influence of window layers on the performance of 650 nm AlGaInP/GaInP multi-quantum-well light-emitting diodes

In this article, we investigate the influence of AlGaAs and GaP window layers on the device performance of 650 nm AlGaInP/GaInP multi-quantum-well (MQW) light-emitting diodes (LEDs) grown by metalorganic chemical-vapor deposition. The AlGaInP/GaInP MQW structure with different window layers are characterized by double-crystal X-ray diffraction, secondary ion mass spectrometry and photoluminescence. By using the AlGaAs window layer, the LEDs have a lower cut-in voltage, a smaller dynamic series resistance and a higher breakdown voltage, while the LEDs with a GaP window layer show a stronger electroluminescence intensity, a higher light output power, a higher external quantum efficiency and a slower degradation of light output with increasing bias current. These results indicate that the GaP material is more adequate to be used as a window layer for the AlGaInP optical devices.     

High quality nanocrystalline silicon thin film fabricated by inductively coupled plasma chemical vapor deposition at 350 °C

High quality nanocrystalline silicon (nc-Si) film was deposited by inductively coupled plasma chemical vapor deposition (ICP-CVD) without substrate RF bias at 350 °C. The nc-Si with a dense crystalline structure of the columnar type grew from the bottom to the top of the nc-Si film. A troublesome incubation layer did not exist at the bottom of the fabricated nc-Si film. A grain size of 40 nm was measured by using a SEM image. When a RF bias of 100 and 200 W was applied to the substrate to induce ion bombardment on the substrate, the crystalline structure and grains were not observed and a-Si deposition became dominant. The transition from nc-Si deposition into a-Si deposition can be attributed to ion bombardment which prevents nucleation and crystal growth at the surface of deposition. This shows that the reduction of ion bombardment can be a key factor to fabricate high quality nc-Si film. By using ICP-CVD with no substrate RF bias, ion bombardment can be reduced, while the density of plasma is kept high, so that high quality nc-Si can be fabricated due to the enhancement of crystalline growth on the surface.     

Substrate temperature effect on the optical properties of amorphous Sb2S3 thin films

Sb₂S₃ amorphous thin films were prepared by thermal evaporation of corresponding powder on thoroughly cleaned glass substrates held at temperature in the range 300‐473 K. X‐ray diffraction and atomic force microscopy have been used to order to identify the structure and morphology of surface thin films. The optical constants of the deposition films were obtained from the analysis of the experimental recorded transmission data over the wavelength range 400‐1400 nm. An analysis of the absorption coefficient values revealed an optical indirect transition with the estimation of the corresponding band gap values. It was found that the optical band gap energy decrease with substrate temperature from 1.67 eV at 300 K to 1.48 eV at 473K. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effect of oxygen content on barrier properties of silicon oxide thin film deposited by dual ion-beam sputtering

A silicon oxide thin film barrier was prepared with various oxygen contents and its chemical composition, surface morphology and optical and barrier properties were related to the deposition conditions used. Our study showed that under Ar and O₂ assisted process conditions, a stoichiometric silicon oxide thin film formed at a critical oxygen content during deposition of 40-50%. The thin films deposited at the critical condition showed the lowest surface roughness giving similar or higher optical transmittance than that of the bare polycarbonate (PC) substrate. The boiling and tensile strength test performed on the thin film deposited with assisted ions before the deposition process showed improvement in the adhesion between the oxide layer and the polymer substrate. In addition, interface modification to improve for improving the barrier layer properties of the silicon oxide thin film was achieved through the introduction of dual ion beam sputtering without pre-treatment.