| 高可靠性无铝有源层808 nm半导体激光器泵浦源 |
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| 引用本文： | 刘鹏,朱振,陈康,王荣堃,夏伟,徐现刚.高可靠性无铝有源层808 nm半导体激光器泵浦源[J].人工晶体学报,2021,50(4):757-761. |
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| 作者姓名： | 刘鹏 朱振 陈康 王荣堃 夏伟 徐现刚 |
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| 作者单位： | 1.山东大学,新一代半导体材料研究院,晶体材料国家重点实验室,济南 250100;2.山东华光光电子股份有限公司,济南 250101;3.济南大学物理科学与技术学院,济南 250022 |
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| 基金项目： | 山东省激光装备创新创业共同体项目 |
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| 摘 要： | 针对高功率808 nm激光器泵浦源的应用需求,设计并制备了InGaAsP/GaInP材料体系的无铝有源区半导体激光器。使用双非对称的限制层及波导层结构,降低了P侧材料的热阻及光吸收。优化了金属有机化学气相沉积(MOCVD)中As和P混合材料的生长条件,制备出界面陡峭的四元InGaAsP单晶外延薄膜。制作的激光器室温测试阈值电流为1.5 A,斜率效率为1.26 W/A,10 A下的功率达到10.5 W,功率转换效率为58%。连续电流测试最大功率为23 W@24.5 A,准连续电流测试最大功率为54 W@50 A,没有产生灾变性光学损伤(COD)。在15 A电流加速老化下,激光器工作4 200 h未出现功率衰减及COD现象,说明制备的无铝有源区808 nm激光器具有高可靠性的输出性能。
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| 关 键 词： | 无铝材料 高可靠性 InGaAsP 808nm 非对称 泵浦源 半导体激光器 |
| 收稿时间： | 2021-03-01 |
High Reliable Al-Free 808 nm Semiconductor Laser Diode Pump Source |
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| LIU Peng,ZHU Zhen,CHEN Kang,WANG Rongkun,XIA Wei,XU Xiangang.High Reliable Al-Free 808 nm Semiconductor Laser Diode Pump Source[J].Journal of Synthetic Crystals,2021,50(4):757-761. |
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| Authors: | LIU Peng ZHU Zhen CHEN Kang WANG Rongkun XIA Wei XU Xiangang |
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| Affiliation: | 1. Institute of Novel Semiconductors, State Key Laboratory of Crystal Material, Shandong University, Jinan 250100, China;2. Shandong Huaguang Optoelectronics Co., Ltd., Jinan 250101, China;3. School of Physics and Technology, University of Jinan, Jinan 250022, China |
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| Abstract: | For 808 nm high power laser used as pump source, Al-free active-region laser diode was designed and fabricated, consisting of InGaAsP/GaInP. In this work, a double asymmetric structure of cladding and waveguide layers to reduce the thermal resistance and optical loss of P-side layers were proposed. By optimizing the MOCVD growth of As and P hybrid material, InGaAsP single-crystal epitaxial film with steep interface was fabricated. The threshold current is 1.5 A at room temperature and the slope efficiency is 1.26 W/A. The output power is 10.5 W at 10 A and the power efficiency is 58%. Under continuous wave (CW) operation, the maximum output power is 23 W@24.5 A, while it can reach 54 W@50 A under quasi continuous wave (QCW) mode without catastrophic optical damage (COD). No power degradation or COD occurred for accelerated aging over 4 200 h at 15 A, showing high long-term reliability of Al-free active-region 808 nm laser diode. |
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| Keywords: | Al-free material high reliabile InGaAsP 808 nm asymmetric pump source semiconductor laser diode |
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