Exchange-induced splitting of radiative exciton levels in a single quantum wire

We report on polarization-resolved micro-photoluminescence experiments performed on a single GaAs/GaAlAs V-shaped quantum wire. At low temperature the micro-photoluminescence spectra are composed of sharp peaks corresponding to excitons localized in naturally formed quantum boxes. We observed splittings of the radiative doublet of these exciton levels into two linearly polarized states due to the exchange interaction. The exchange splittings are of the order of 100 μeV. A theoretical model of the exchange interaction on localized states in quantum wires is developed. It shows that the exchange splitting is characteristic of the uniaxial anisotropy of the localized states and thus related to their extension along the wire axis. The experimental results are discussed within the frame of this model.     

Localized exciton dynamics in AlInGaN alloy

Carrier recombination dynamics in AlInGaN alloy has been studied by photoluminescence (PL) and time-resolved PL (TRPL) at various temperatures. The fast red-shift of PL peak energy is observed and well fitted by a physical model considering the thermal activation and transfer processes. This result provides evidence for the exciton localization in the quantum dot (QD)-like potentials in our AlInGaN alloy. The TRPL signals are found to be described by a stretched exponential function of exp[(−t/τ)^β], indicating the presence of a significant disorder in the material. The disorder is attributed to a randomly distributed QDs or clusters caused by indium fluctuations. By studying the dependence of the dispersive exponent β on temperature and emission energy, we suggest that the exciton hopping dominate the diffusion of carriers localized in the disordered QDs. Furthermore, the localized states are found to have 0D density of states up to 250 K, since the radiative lifetime remains almost unchanged with increasing temperature.     

Exciton and biexciton fine structure in single elongated islands grown on a vicinal surface

We report a microphotoluminescence study of the exciton and the biexciton localized in very elongated islands formed by well-width fluctuations in a thin CdTe/CdMgTe quantum well grown on a vicinal surface. The electron-hole exchange interaction in a local reduced symmetry splits the exciton states. The resulting transitions are linearly polarized along the two orthogonal principal axes of the island. The valence band mixing induced by the elongated shape of the potential leads to a strong polarization anisotropy and to the observation of dark exciton states under magnetic field. The biexciton-exciton transition reproduces all the fine structure of the exciton state including the transition of the biexciton to the dark exciton state.     

Photoluminescence quantum and surface states of excitons in ZnSe and CdS nanoclusters

The optical spectra of quantum dots (QDs) of CdS and ZnSe grown in borosilicate glass by the sol-gel method are obtained and analyzed. It is found that at concentrations of the two semiconductors x<0.06% the emission spectra are due to annihilation of free (internal) excitons in quantum states. The mean size of the quantum dots for a given concentration of ZnSe and CdS is calculated and found to be in good agreement with the X-ray data, and the exciton binding energy is calculated with allowance for the dielectric mismatch between the semiconductor and matrix. It is proposed that this mismatch may be the cause giving rise to the exciton percolation level that is observed in QD arrays for both systems at x>0.06%. The emission from the surface level of CdS QDs in the region ~2.7 eV, formed by the outer atoms with dangling bonds, is observed for the first time, as is the emission band from surface localized states. The relation between the position of the maximum of this band and the energy of the 1S state of the free exciton is established. It is shown that the properties of surface localized states are largely similar to the analogous properties of localized states of 3D (amorphous semiconductors, substitutional solid solutions of substitution) and 2D (quantum wells and superlattices) structures.     

Exciton Recombination and Spin Dynamics in Indirect-Gap Quantum Wells and Quantum Dots

The behavior of excitons in heterostructures with indirect-gap GaAs/AlAs quantum wells and (In, Al)As/AlAs quantum dots is discussed. The possibilities of controlled change of the exciton radiative recombination time in the range from dozens of nanoseconds to dozens of microseconds, experimental study of the spin dynamics of long-lived localized excitons, and use of the optical resonant methods for exciting the indirect-band exciton states are demonstrated.     

Electrons and excitons in an imperfect superlattice in electric fields

We present variational calculations of excitonic states in a superlattice coupled with a wide quantum well in electric fields. The electronic states in the structure are analyzed by using both exact solutions of the one-dimensional Schrödinger equation and the simple tight-binding approximation. We demonstrate the latter method to be well applicable to calculating and designing complicated irregular superlattices. The electron spectrum can be conveniently interpreted as a result of field-induced mixing and anticrossing of electron quantized states in the enlarged quantum well with non-equidistant Stark-ladder states in the semi-infinite ideal superlattice. The electron-hole Coulomb attraction results in a relative redistribution between the extended and the localized states in the exciton. The allowance for this redistribution has a particularly strong influence upon the exciton oscillator strength and radiative lifetime.     

Confinement versus localization for quantum wells and quantum wires in a self-assembled structure

We investigate the effects of interface localization due to microroughness in a sample presenting a quantum well and a quantum wire. The magnetoshift of the emission lines measured at different temperatures are analysed using a model where the average effect of the microroughness is represented by a Gaussian defect. We obtain a quantitative estimate of the exciton localization due to the microroughness. As the temperature increases the excitons are released from the weak localized defects. Time-resolved luminescence results corroborate this interpretation.     

Fine structure of localized exciton levels in quantum wells

A theory is constructed for the long-range exchange and retarding interactions between an electron and a hole in a quantum well. A method is developed that makes it possible to calculate the ground and excited states of an exciton localized as a whole on a width fluctuation of a quantum well in the form of a rectangular island. It is shown that taking into account the electron-hole interaction mechanisms considered here causes the radiation doublet of the exciton to split into two components polarized along the sides of the rectangle. The dependence of the magnitude and sign of this splitting on the linear dimensions of the island and the level number of the localized exciton are analyzed. Zh. éksp. Teor. Fiz. 113, 703–714 (February 1998)     

Effect of localized-exciton energy relaxation on the emission spectrum of ZnS-ZnSe single quantum wells

A study is reported on the dependence of exciton photoluminescence spectra of ZnS-ZnSe quantum wells with different localization-center concentrations on the excitation intensity and temperature. The shape of the experimental low-temperature photoluminescence band is shown to agree well with that calculated in a model of exciton hopping to the nearest localization center and in one that takes into account transitions of a localized exciton to all centers in its local environment. The parameters characterizing localized excitons in these quantum structures of a submonolayer thickness have been determined.     

The symmetry of the relative motion of excitons in semiconductor heterostructures

A theoretical model of excitonic states in semiconductor heterostructures is presented. The approach employs the envelope function approximation, and involves a two parameter variational calculation in which the symmetry of the component of the wave function representing the relative motion is allowed to vary between the two- and three-dimensional limits. Detailed calculations are described for a variety of single quantum wells and superlattices. The results show that the excitons are neither 2D nor 3D like, but are intermediate in character. Furthermore, in the main, they assume the symmetry of a prolate spheroid. An exception to this occurs in the special case of an asymmetric double quantum well close to resonance, where two stable exciton states are found for the same one-particle states. One of these ‘twin’ exciton states is an oblate spheroid. The results illustrate the need for accurate determination of excitonic properties if the dynamical evaluation of exciton states, in for example, quantum well lasers, is to be readily determined.     

Adiabatic Passage of Collective Excitations in Atomic Ensembles

We describe a theoretical scheme that allows for transfer of quantum states of atomic collective excitation between two macroscopic atomic ensembles localized in two spatially-separated domains. The conception is based on the occurrence of double-exciton dark states due to the collective destructive quantum interference of the emissions from the two atomic ensembles. With an adiabatically coherence manipulation for the atom-field couplings by stimulated Ramann scattering, the dark states will extrapolate from an exciton state of an ensemble to that of another. This realizes the transport of quantum information among atomic ensembles.     

Adiabatic Passage of Collective Excitations in Atomic Ensembles

We describe a theoretical scheme that allows for transfer of quantum states of atomic collective excitation between two macroscopic atomic ensembles localized in two spatially-separated domains. The conception is based on the occurrence of double-exciton dark states due to the collective destructive quantum interference of the emissions from the two atomic ensembles. With an adiabatically coherence manipulation for the atom-field couplings by stimulated Rmann scattering, the dark states will extrapolate from an exciton state of an ensemble to that of another. This realizes the transport of quantum information among atomic ensembles.     

Exciton states and optical absorption in quantum wires under laser radiation

We analyze the exciton states in a quantum wire under intense laser radiation. Electrons and holes are confined by the parabolic potential of the quantum wire. An exactly solvable model is introduced for calculating the exciton binding energy, replacing the actual Coulomb interaction between the electron and the hole by a projective operator.     

Emission and energy relaxation of excitons in quantum dots with disordered interfaces grown in a low-permittivity matrix

Samples of borosilicate glasses doped by CdS with concentrations smaller than 1% are studied. It is shown that, due to a disorder at interfaces of quantum dots, the main channels of emission of excitons by quantum dots are the annihilation of excitons in quantum and localized surface states, while the efficiency of interaction between the channels largely depends on the radius of quantum dots. It is found for the first time that states that form the second emission channel are not discrete energy levels in the band gap, as is usually assumed in some experimental and theoretical works, but rather form a quasi-continuous tail of the density of localized states. These localized states appear as a result of dangling bonds of outer atoms of quantum dots. Energy relaxation of carriers via localized states is the reason for a long response time of these structures to an external action and can be enhanced due to a polarization effect caused by different dielectric constants of materials of quantum dots and matrix.     

High-resolution nonlinear laser spectroscopy of exciton relaxation in GaAs quantum wells

This paper describes measurements of exciton relaxation in GaAs/AlGaAs quantum well structures based on high resolution nonlinear laser spectroscopy. The nonlinear optical measurements show that low energy excitons can be localized by monolayer disorder of the quantum well interface. We show that these excitons migrate between localization sites by phonon assisted migration, leading to spectral diffusion of the excitons. The frequency domain measurements give a direct measure of the quasi-equilibrium exciton spectral redistribution due to exciton energy relaxation, and the temperature dependence of the measured migration rates confirms recent theoretical predictions. The observed line shapes are interpreted based on solutions we obtain to modified Bloch equations which include the effects of spectral diffusion.     

Exciton polaritons and their one-dimensional localization in disordered quantum-well structures

A theory of the Anderson localization of light in randomly arranged ultrathin layers (quantum wells) uniform in lateral dimensions and possessing intrinsic optical resonances is put forward. To solve the multiple-scattering problem, a model of layers with a δ-function resonance dielectric polarization is proposed. The model is an electromagnetic counterpart of the electronic model of zero-radius potentials. Interlayer disorder is included under the assumption of a low average concentration of identical layers in order to calculate analytically the one-and two-photon characteristics of electromagnetic-radiation transport, in particular, the average energy density and the Anderson localization length of light. The analysis is carried out for a structure with randomly distributed quantum wells in which quasi-two-dimensional excitons of different quantum wells are in resonance while their wave functions do not overlap. It is shown that the average electromagnetic field propagates through this disordered structure in the form of polaritons but are produced in exciton reemission between quantum wells. The localization length of light in the polariton spectral region decreases substantially, because the scattering (reflection) of light by individual quantum wells grows near the excitonic resonance.     

Charge and energy transfer in double asymmetric quantum wells with quantum dots

The luminescence and luminescence excitation spectra of CdSe/ZnSe quantum dots are studied in a set of double quantum wells with the ZnSe barrier of width 14 nm, the same amount of a deposited CdSe layer forming a deep well and shallow wells with different depths. It is found that for a certain relation between the depths of shallow and deep wells in this set, conditions are realized under which the exciton channel in the luminescence excitation spectrum of a shallow well dominates in the region of kinetic exciton energies exceeding 10 longitudinal optical phonons above the bottom of the exciton band of the ZnSe barrier. A model is developed for the transfer of electrons, holes, and excitons between the electronic states of shallow and deep quantum wells separated by wide enough barriers. It is shown that the most probable process of electronic energy transfer between the states of shallow and deep quantum wells is indirect tunneling with the simultaneous excitation of a longitudinal optical phonon in the lattice. Because the probability of this process for single charge carriers considerably exceeds the exciton tunneling probability, a system of double quantum wells can be prepared in which, in the case of weak enough excitation, the states of quantum dots in shallow quantum wells will be mainly populated by excitons, which explains experimental results obtained.     

纤锌矿InGaN staggered量子阱中的激子态和光学性质

本文将基于有效质量近似下的变分法,理论研究了纤锌矿InGaN/GaN staggered量子阱中的激子态和光学性质.数值结果显示了InGaN量子阱中的量子尺寸和staggered受限垒对束缚于量子阱中的激子态和光学性质有着明显的影响.当阱宽增加时,量子受限效应减弱,激子结合能降低,带间发光波长增加.另一方面,当量子阱中staggered受限势增加时,量子受限效应增强,激子结合能升高,带间发光波长降低.本文的理论结果证明了可以通过调节staggered垒高和量子尺寸来调控纤锌矿InGaN staggered量子阱中的激子态和光学性质.     

Resonant Raman scattering spectra in a ZnCdSe/ZnSe structure with a quantum well and open nanowires

Resonance Raman scattering (RS) spectra of a ZnCdSe/ZnSe sample containing a single quantum well and quantum well-based open nanowires were studied at T=300 K. The longitudinal optical (LO) phonons involved in the formation of the observed spectra of the quantum-well and nanowire regions differ noticeably in energy. The LO phonon energies in the structures under study were calculated taking into account the compositional effect (doping of Cd into ZnSe) and biaxial strain. When excited in the exciton resonance region, RS is shown to occur via free (extended) excitonic states with the involvement of LO phonons of the ZnCdSe strained layer with final wave vectors near the Brillouin zone center. When excited below the excitonic resonance in the ZnCdSe layer, resonance scattering via localized exciton states provides a noticeable contribution to the observed RS lines. Because of the finite size of a localized state, phonons with large wave vectors are involved in these scattering processes. The RS lines produced under excitation in the excitonic region of the thick barrier layers are due to scattering from the ZnSe barrier phonons.     

纤锌矿InGaN staggered量子阱中的激子态和光学性质

本文将基于有效质量近似下的变分法,理论研究了纤锌矿InGaN/GaN staggered 量子阱中的激子态和光学性质。数值结果显示了InGaN量子阱中的量子尺寸和staggered受限垒对束缚于量子阱中的激子态和光学性质有着明显地影响。当阱宽增加时,量子受限效应减弱,激子结合能降低, 带间发光波长增加。另一方面,当量子阱中staggered受限势增加时,量子受限效应增强,激子结合能升高,带间发光波长降低。本文的理论结果证明了可以通过调节staggered垒高和量子尺寸来调控纤锌矿InGaN staggered 量子阱中的激子态和光学性质。