Polaronic shift of the Wannier-Mott exciton binding energy in a quantum wire with allowance for the phonon confinement effect

Within the framework of the Li-Low-Pines model the interaction of a Wannier-Mott exciton with polar optical phonons in a cylindrical semiconductor wire is studied, taking into account the phonon confinement effect. An analytical expression for the exciton binding energy with allowance for the polaronic effect is obtained. Numerical calculations of the binding energy are carried out for AlAs/GaAs/AlAs and ZnSe/CdSe/ZnSe wires with a various degree of polarity of quantum wire materials. The polaronic shift of the binding energy of light and heavy hole excitons is calculated.     

Nonradiative exciton transfer by the Förster mechanism from InAs/AlAs quantum dots to dye molecules in hybrid structures

Förster resonance transfer of excitons from self-assembled InAs/AlAs quantum dots to cyanine dye molecules deposited on the structure surface is investigated. It is shown that the efficiency of the exciton transfer changes upon the interaction of cyanine dye molecules with chloroform due to a change in the molecule dipole moment.     

Collective behavior of interwell excitons in GaAs/AlGaAs double quantum wells

Photoluminescence spectra of interwell excitons in double GaAs/AlGaAs quantum wells (n-i-n structures) have been investigated (an interwell exciton in these systems is an electron-hole pair spatially separated by a narrow AlAs barrier). Under resonance excitation by circularly polarized light, the luminescence line of interwell excitons exhibits a significant narrowing and a drastic increase in the degree of circular polarization of photoluminescence with increasing exciton concentration. It is found that the radiative recombination rate significantly increases under these conditions. This phenomenon is observed at temperatures lower than the critical point and can be interpreted in terms of the collective behavior of interwell excitons.     

Excitonic transitions in Be-doped GaAs/AlAs multiple quantum well

A series of GaAs/AlAs multiple-quantum wells doped with Be is grown by molecular beam epitaxy. The photoluminescence spectra are measured at 4, 20, 40, 80, 120, and 200 K, respectively. The recombination transition emission of heavy-hole and light-hole free excitons is clearly observed and the transition energies are measured with different quantum well widths. In addition, a theoretical model of excitonic states in the quantum wells is used, in which the symmetry of the component of the exciton wave function representing the relative motion is allowed to vary between the two- and threedimensional limits. Then, within the effective mass and envelope function approximation, the recombination transition energies of the heavy- and light-hole excitons in GaAs/AlAs multiple-quantum wells are calculated each as a function of quantum well width by the shooting method and variational principle with two variational parameters. The results show that the excitons are neither 2D nor 3D like, but are in between in character and that the theoretical calculation is in good agreement with the experimental results.     

Energy relaxation and transport of indirect excitons in AlAs/GaAs coupled quantum wells in magnetic field

The evolution of indirect exciton luminescence in AlAs/GaAs coupled quantum wells after excitation by pulsed laser radiation has been studied in strong magnetic fields (B⩽12 T) at low temperatures (T⩾1.3 K), both in the normal regime and under conditions of anomalously fast exciton transport, which is an indication of the onset of exciton superfluidity. The energy relaxation rate of indirect excitons measured in the range of relaxation times between several and several hundreds of nanoseconds is found to be controlled by the properties of the exciton transport, specifically, this parameter increases with the coefficient of excitonic diffusion. This behavior is qualitatively explained in terms of migration of excitons between local minima of the random potential in the plane of the quantum well. Zh. éksp. Teor. Fiz. 114, 1115–1120 (September 1998)     

Interwell excitons in GaAs/AlGaAs double quantum wells and their collective properties

Luminescence spectra of interwell excitons in GaAs/AlGaAs double quantum wells with electric-field-tilted bands (n-i-n) structures were studied. In these structures the electron and the hole in the interwell exciton are spatially separated between neighboring quantum wells by a narrow AlAs barrier. Under resonant excitation by circularly polarized light the luminescence line of the interwell excitons exhibited appreciable narrowing as their concentration increased and the degree of circular polarization of the photoluminescence increased substantially. Under resonant excitation by linearly polarized light the alignment of the interwell excitons increased as a threshold process with increasing optical pumping. By analyzing time-resolved spectra and the kinetics of the photoluminescence intensity under pulsed excitation it was established that under these conditions the rate of radiative recombination increases substantially. The observed effect occurs at below-critical temperatures and is interpreted in terms of the collective behavior of the interwell excitons. Studies of the luminescence spectra in a magnetic field showed that the collective exciton phase is dielectric and in this phase the interwell excitons retain their individual properties.     

Electro-optical trap for dipolar excitons in a GaAs/AlAs Schottky diode with a single quantum well

An electro-optical trap for spatially indirect dipolar excitons has been implemented in a GaAs/AlAs Schottky diode with a 400-Å-wide single quantum well. In the presence of a bias voltage applied to a gate, the trap for excitons appears upon ring illumination of the structure by a continuous-wave or pulsed laser generating hot electron-hole pairs in the quantum well. A barrier for excitons collected inside the illuminated ring appears because of the screening of the applied electric field by nonequilibrium carriers directly in the excitation region. Excitons are collected inside the ring owing to the ambipolar drift of carriers and dipole-dipole exciton repulsion in the optical pump region. For dipolar excitons thus collected in the center of the ring electrooptical trap, a significant narrowing of the luminescence line that accompanies an increase in the density of excitations indicates the collective behavior of dipolar excitons.     

Ground state energy of the electron-hole liquid in type-II (GaAs)m/(AlAs)m quantum wells

The ground state energy of quasi-two-dimensional electron-hole liquid (EHL) at zero temperature is calculated for type-II (GaAs)_m/(AlAs)_m (5≤m≤10) quantum wells (QWs). The correlation effects of Coulomb interaction are taken into account by a random phase approximation of Hubbard. Our EHL ground state energy per electron-hole pair is lower than the exciton energy calculated recently for superlattices, so we expected that EHL is more stable state than excitons at high excitation density. It is also demonstrated that the equilibrium density of EHL in type-II GaAs/AlAs QWs is of one order of magnitude larger than that in type-I GaAs/AlAs QWs.     

Negatively Charged Excitons in a Quantum Disk

The method of few-body physics is applied to treating negatively charged excitons in a quantum disk. The energies of low-lying states of a negatively charged exciton are calculated for a few values of the electron-to-hole mass ratio. A new bound state of a negatively charged exciton in a quantum disk with orbital angular momentum L = 1 and the triplet state of the two bound electrons are predicted. The binding energy of a negatively charged exciton asfunction of disk radius for the heavy hole and the light hole is investigated.     

Strong coupling between Tamm plasmon and QW exciton

We report on the strong coupling between a Tamm plasmon mode and excitons from inorganic quantum wells. The sample is formed by an AlAs/GaAlAs Bragg reflector containing InGaAs QWs in its high refractive index layers, on top of which a thin silver film is deposited. Angle resolved reflectometry experiments at low temperature (77 K) show a clear anticrossing in the dispersion relations, evidencing the strong coupling regime. The Rabi splitting amounts to 11.5 meV. Emission from low and high energy Tamm plasmon/exciton polaritons is also demonstrated. Experimental data are in very good agreement with transfer matrix simulations.     

半导体量子点中弱耦合激子的性质

研究了抛物型半导体量子点中弱耦合激子的性质,在有效质量近似下,采用线性组合算符和幺正变换的方法,导出了抛物型半导体量子点中激子的基态能量。讨论了量子点半径和受限强度对半导体量子点中弱耦合激子的基态能量的影响。以GaAs半导体为例进行了数值计算,结果表明:在弱耦合情况下,重空穴激子和轻空穴激子的基态能量随量子点半径的减小而增大,随受限强度ω₀的增强而增大。     

Quantum mechanical repulsion of exciton levels in a disordered quantum well

Spatially resolved photoluminescence spectra of a single quantum well are recorded by near-field spectroscopy. A set of over four hundred spectra displaying sharp emission lines from localized excitons is subject to a statistical analysis of the two-energy autocorrelation function. An accurate comparison with a quantum theory of the exciton center-of-mass motion in a two-dimensional spatially correlated disordered potential reveals clear signatures of quantum mechanical energy level repulsion, giving the spatial and energetic correlations of excitons in disordered quantum systems.     

High-Density Effects on the Exciton Systems and Their Dynamical Behavior in Al x Ga 1− x As/AlAs Quantum Wires

In Al x Ga 1 m x As/AlAs quantum wire (QWR) structures, the lower lying indirect exciton (IE) photoluminescence (PL) peak shows remarkable blue-shift under intense light-excitation contrary to the higher lying direct exciton (DE) PL band with very small blue-shift, although the two kinds of exciton states consist of the common hole state. In time-resolved PL spectra in the type-II QWR of x = 0.4, the DE PL band appears at an earlier stage without peak-shift and the excitons relax to the IE state making the IE PL peak dominant with time evolution. The blue-shift of the IE peak in a quasi equilibrium after the relaxation seriously depends on the excitation density. The origin of the blue-shift is explained in terms of many-body effects including band-bending effect due to the electric field induced by spatially separated electrons and holes in the QWR structures.     

Quantum Monte Carlo simulation of exciton–exciton scattering in a GaAs/AlGaAs quantum well

We present a computer simulation of exciton–exciton scattering in a quantum well. Specifically, we use quantum Monte Carlo techniques to study the bound and continuum states of two excitons in a 10 nm wide GaAs/Al_0.3Ga_0.7As quantum well. From these bound and continuum states we extract the momentum-dependent phase shifts for s-wave scattering. A surprising finding of this work is that a commonly studied effective-mass model for excitons in a 10 nm quantum well actually supports two bound biexciton states. The second, weakly bound state may dramatically enhance exciton–exciton interactions. We also fit our results to a hard-disk model and indicate directions for future work.     

Quantum wells for femtosecond optoelectronics applications

The ultrafast nonlinear optical properties of quantum well excitons have been studied extensively in recent years. Quantum well excitons, which are sharp and well-resolved at room temperature, are well suited to optoelectronics applications, having large electroabsorption response. In this review, we discuss experiments which use simultaneously the nonlinear optical response of the quantum well exciton and the electroabsorption response in order to characterize electrical signals in the femtosecond time scale. In addition, we discuss intrinsic speed limitations in excitonic optoelectronics and extensions to one- and two-dimensional spatiotemporal field mapping.     

Absorption Spectra and Refractive Index Changes of an Exciton in a Core/Shell Quantum Dot

The absorption spectra and the refractive index changes are calculated theoretically for an exciton in a core/shell quantum dot. The advantage of our methodology is that one can investigate the influence of the repulsive core by varying two parameters in the confinement potential. The dimensionality effect of exciton quantum dots on the optical absorptions has been studied. It has been found that in the same regime, the optical absorption intensities of excitons are much smaller for the core/shell quantum dots than for the two-dimensional quantum rings. The linear and the nonlinear optical absorption coefficients and refractive index changes have been examined with the change of the confinement potential. The results show that the optical absorptions and the refractive index changes are strongly affected by the repulsive core of core/shell quantum dots. Moreover, the calculated results also reveal that as the inner radius increases, the peak values of the absorption coefficients and the refractive index changes of an exciton will show the optical Aharonov–Bohm oscillation in core/shell quantum dots.     

Magnetic-field-effects on photoluminescence polarization in type II GaAs/AlAs superlattices

Optical orientation and alignment in the presence of a magnetic field have been applied to study the fine structure of excitons in type II GaAs/AlAs superlattices. We have developed a theory of polarized photoluminescence taking into account the anisotropic exchange splitting of the radiative excitonic doublet. The observed effects of the longitudinal and transverse magnetic fields on the polarization of the exciton emission unambiguously confirm that the actual symmetry of the exciton is lower that D_2d and that there exist two classes of excitons with opposite signs of the anisotropic exchange splitting.     

Quantum Noise and Squeezed Light by Dipolaritons in the Nonlinear Regime

The quantum noise and the squeezing effect, in the transmitted light, by a dipolariton system formed by a double quantum wells microcavity in the strong coupling regime are investigated. It is shown that the indirect exciton nonlinearity generates stronger squeezing than the direct exciton nonlinearity, nevertheless produces very high fluctuations for some particular detunings and nonlinearities. The system shows a considerable sensitivity to the thermal excitations where the coupling to the direct and indirect excitonic thermal baths progressively destroys the nonclassical effect. Despite that, indirect exciton squeezing manifests a higher resistance against the thermal bath temperature. As a result, the emission field is strongly governed by the indirect excitons, varying between robust squeezing and excess noise.     

Negative Trions Trapped by a Spherical Parabolic Quantum Dot

In this paper, a negatively charged exciton trapped by a spherical parabolic quantum dot has been investigated. The energy spectra of low-lying states are calculated by means of matrix diagonalization. The important feature of the low-lying states of the negatively charged excitons in a spherical quantum dot is obtained via an analysis of the energy spectra.