Luminescence of excitons and antisite defects in Lu<Subscript>3</Subscript>Al<Subscript>5</Subscript>O<Subscript>12</Subscript>:Ce single crystals and single-crystal films

The luminescence of excitons and antisite defects (ADs) was investigated, as well as the specific features of the excitation energy transfer from excitons and ADs to the activator (Ce³⁺ ion) in phosphors based on Lu₃Al₅O₁₂:Ce (LuAG:Ce) single crystals and single-crystalline films, which are characterized by significantly different concentrations of ADs of the Lu _Al ³⁺ type and vacancy-type defects. The luminescence band with λ_max = 249 nm in LuAG:Ce single-crystal films is due to the luminescence of self-trapped excitons (STEs) at regular sites of the garnet lattice. The excited state of STEs is characterized by the presence of two radiative levels with significantly different transition probabilities, which is responsible for the presence of two excitation bands with λ_max = 160 and 167 nm and two components (fast and slow) in the decay kinetics of the STE luminescence. In LuAG:Ce single crystals, in contrast to single-crystal films, the radiative relaxation of STEs in the band with λ_max = 253.5 nm occurs predominantly near Lu _Al ³⁺ ADs. The intrinsic luminescence of LuAG:Ce single crystals at 300 K in the band with λ_max = 325 nm (τ = 540 ns), which is excited in the band with λ_max = 175 nm, is due to the radiative recombination of electrons with holes localized near Lu _Al ³⁺ ADs. In LuAG:Ce single crystals, the excitation of the luminescence of Ce³⁺ ions occurs to a large extent with the participation of ADs. As a result, slow components are present in the luminescence decay of Ce³⁺ ions in LuAG:Ce single crystals due to both the reabsorption of the UV AD luminescence in the 4f-5d absorption band of Ce³⁺ ions with λ_max = 340 nm and the intermediate localization of charge carriers at ADs and vacancy-type defects. In contrast to single crystals, in phosphors based on LuAG:Ce single-crystal films, the contribution of slow components to the luminescence of Ce³⁺ ions is significantly smaller due to a low concentration of these types of defects.     

Luminescence and thermally stimulated recombination processes in Li<Subscript>6</Subscript>Gd(BO<Subscript>3</Subscript>)<Subscript>3</Subscript>:Ce<Superscript>3+</Superscript> crystals

The luminescence and thermally stimulated recombination processes in lithium borate crystals Li₆Gd(BO₃)₃ and Li₆Gd(BO₃)₃:Ce have been studied. The steady-state luminescence spectra under X-ray excitation (X-ray luminescence), temperature dependences of the intensity of steady-state X-ray luminescence (XL), and thermally stimulated luminescence (TSL) spectra of these compounds have been investigated in the temperature range of 90–500 K. The intrinsic-luminescence 312-nm band, which is due to the ⁶ P _J → ⁸ S _7/2 transitions in Gd³⁺ matrix ions, dominates in the X-ray luminescence spectra of these crystals; in addition, there is a wide complex band at 400–420 nm, which is due to the d → f transitions in Ce³⁺ impurity ions. It is found that the steady-state XL intensity in these bands increases several times upon heating from 100 to 400 K. The possible mechanisms of the observed temperature dependence of the steady-state XL intensity and their correlation with the features of electronic-excitation energy transfer in these crystals are discussed. The main complex TSL peak at 110–160 K and a number of minor peaks, whose composition and structure depend on the crystal type, have been found in all crystals studied. The nature of the shallow traps that are responsible for TSL at temperatures below room temperature and their relation with defects in the lithium cation sublattice are discussed.     

Energy levels of rare-earth ions in Gd<Subscript>2</Subscript>O<Subscript>2</Subscript>S

The energies of the ground 4f ⁿ levels of tri- and divalent rare-earth ions with respect to the conduction and valence bands of Gd₂O₂S crystal has been determined. It is shown that the Pr³⁺, Tb³⁺, and Eu³⁺ ions can be luminescence centers in Gd₂O₂S. The levels of the Nd³⁺, Dy³⁺, Er³⁺, Tm³⁺, Sm³⁺, and Ho³⁺ ions lie in the valence band; therefore, these ions cannot play the role of activators. The ground 4f level of the Ce³⁺ ion is near the midgap, due to which Ce³⁺ effectively captures holes from the valence band and electrons from the conduction band and significantly decreases the afterglow level of the Gd₂O₂S:Pr and Gd₂O₂S:Tb phosphors.     

luminescence of BaGa<Subscript>2</Subscript>Se<Subscript>4</Subscript> crystals activated by Eu<Superscript>2+</Superscript> and Ce<Superscript>3+</Superscript> ions

We have studied the effect of doping with Eu²⁺ and Ce³⁺ ions on the photoluminescence (PL) of BaGa₂Se₄ crystals in the temperature range 77–300 K. We have established that the broad bands with maxima at wavelengths 456 nm and 506 nm observed in the photoluminescence spectra of BaGa₂Se₄:Ce³⁺ crystals are due to intracenter transitions 5d → ²F_7/2 and 5d →²F_5/2 of the Ce³⁺ ions, while the broad photoluminescence band with maximum at 521 nm in the spectrum of BaGa₂Se₄:Eu²⁺ is associated with 4f⁶ 5d → 4f⁷ (⁸S_7/2) transitions of the Eu²⁺ ion. We show that in BaGa₂Se₄:Eu²⁺,Ce³⁺ crystals, excitation energy is transferred from the Ce³⁺ ions to the Eu²⁺ ions.     

Restored thermoluminescence in oxide crystals

In this paper, we present the results of a thermoluminescence study on several oxide crystals, including Y₃Al₅O₁₂ (YAG), Y₃Al₅O₁₂:Nd (YAG:Nd), Lu₂SiO₅:Ce (LSO:Ce), Y₂SiO₅:Ce (YSO:Ce), Gd₂SiO₅:Ce (GSO:Ce), PbWO (PWO), and PbWO:La (PWO:La). A phenomenon involving restoration of thermoluminescence (TL) glow peaks is found to occur in some of the crystals investigated; crystals γ-irradiated at room temperature and subsequently stored for some time in the dark at 77 K exhibit TL glow peaks in the range below room temperature. This phenomenon is caused not by a thermally or optically stimulated process, but rather as a by-product of a tunneling process. The intensity of the restored TL glow peaks measured in LSO:Ce crystals is found to be proportional both to the radiation dose and to the storage-time at low temperature. A phenomenological theoretical model is proposed, in which tunneling recombination occurs between deep electron and hole traps accompanied by the simultaneous ejection of an electron to the conduction band; some of these conduction electrons then repopulate shallow traps. An oxygen vacancy with two trapped electrons is assumed to be the deep electron trap in this model. The role of oxygen vacancies is confirmed by heating in air at 1000 °C. This model is applied specifically to LSO:Ce, and several possible candidates are suggested for shallow traps in that material.     

Luminescence and electronic excitations in Li<Subscript>6</Subscript>Gd(BO<Subscript>3</Subscript>)<Subscript>3</Subscript>: Ce<Superscript>3+</Superscript> crystals

This paper reports on a study of the luminescence emitted by Li₆Gd(BO₃)₃: Ce³⁺ crystals under selective photoexcitation to lower excited states of the host ion Gd³⁺ and impurity ion Ce³⁺ within the 100–500-K temperature interval, where the mechanisms of migration and relaxation of electronic excitation energy have been shown to undergo noticeable changes. The monotonic 10–15-fold increase in intensity of the luminescence band at 3.97 eV has been explained within a model describing two competing processes, namely, migration of electronic excitation energy over chains of Gd³⁺ ions and vibrational energy relaxation between the ⁶ I _j and ⁶ P _j levels. It has been shown that radiative transitions in Ce³⁺ ions from the lower excited state 5d ¹ to ² F _5/2 and ² F _7/2 levels of the ground state produce two photoluminescence bands, at 2.08 and 2.38 eV (Ce1 center) and 2.88 and 3.13 eV (Ce2 center). Possible models of the Ce1 and Ce2 luminescence centers have been discussed.     

Spectral-kinetic characteristics of crystals and nanoceramics based on BaF<Subscript>2</Subscript> and BaF<Subscript>2</Subscript>: Ce

Optical characteristics of BaF₂ and BaF₂: Ce single crystals and nanoceramic materials prepared from these single crystals by uniaxial hot pressing have been studied. It has been shown that the introduction of Ce₃₊ ions into BaF₂ hardly affects the ultrafast (∼0.9 ns) luminescence component. The integrated luminescence intensity of the BaF₂: Ce nanoceramics is higher than that of the corresponding single crystal and considerably higher that the intensity of the undoped BaF₂ crystal. It has been demonstrated that the slow (several hundred nanoseconds) component of the luminescence decay of BaF₂: Ce is due to the energy transfer from excitons to Ce³⁺ ions.     

Investigation of luminescence spectra of the Y<Subscript>3</Subscript>Al<Subscript>5</Subscript>O<Subscript>12</Subscript> and Y<Subscript>3</Subscript>Al<Subscript>5</Subscript>O<Subscript>12</Subscript>:Ce single-crystal films

The luminescence spectra of single-crystal films and bulk crystals of yttrium-aluminum garnet Y₃Al₅O₁₂ and Ce³⁺-activated Y₃Al₅O₁₂ were investigated. It was shown that the room-temperature luminescence intensity of the Ce³⁺-free single-crystal Y₃Al₅O₁₂ film was considerably lower than that of the bulk crystals, while the luminescence intensity of the Ce³⁺ ions in the Y₃Al₅O₁₂:Ce films was considerably higher than that one for the corresponding bulk crystal.     

Thermal quenching of luminescence of BaY<Subscript>2</Subscript>F<Subscript>8</Subscript> crystals activated with Er<Superscript>3+</Superscript> and Tm<Superscript>3+</Superscript> ions

Thermal quenching of interconfigurational 5d-4f luminescence of Er³⁺ and Tm³⁺ ions in BaY₂F₈ crystals is studied in the temperature range of 330–790 K. The quenching temperatures are ~575 and ~550 K for Er³⁺ and Tm³⁺, respectively. It is shown that quenching of 5d-4f luminescence of Tm³⁺ ions is caused by thermally stimulated ionization of 5d electrons to the conduction band.     

Luminescence properties of phosphors based on Tb<Subscript>3</Subscript>Al<Subscript>5</Subscript>O<Subscript>12</Subscript> (TbAG) terbium-aluminum garnet

The processes of excitation energy transfer in phosphors based on single-crystal Tb₃Al₅O₁₂:Ce (TbAG:Ce) and Tb₃Al₅O₁₂:Ce,Eu (TbAG:Ce,Eu) garnet films have been investigated. These films are considered to be promising materials for screens for X-ray images and luminescence converters of blue LED radiation. The conditions for excitation energy transfer from the matrix (Tb³⁺ cations) to Ce³⁺ and Eu³⁺ ions in TbAG:Ce and TbAG:Ce,Eu phosphors have been analyzed in detail. It is established that a cascade process of excitation energy transfer from Tb³⁺ ions to Ce³⁺ and Eu³⁺ ions and from Ce³⁺ ions to Eu³⁺ ions is implemented in TbAG:Ce,Eu via dipole-dipole interaction and through the Tb³⁺ cation sublattice.     

Photodynamic processes in CaF<Subscript>2</Subscript> crystals activated by Ce<Superscript>3+</Superscript> and Yb<Superscript>3+</Superscript> ions

The photochemical properties of CaF₂ crystals activated by Ce³⁺ and Yb³⁺ ions are studied. A model of the photodynamic processes induced by pumping UV or VUV radiation in active media is suggested and experimentally verified. This model explains both the presence of color centers of electronic and hole nature in crystals activated by cerium and the mechanism of suppressing of solarization processes after additional activation of the samples by Yb³⁺ ions. The cross sections of the processes of free-carrier capture by various ytterbium impurity centers are estimated. These impurity centers are established to be effective centers of recombination of free carriers of both signs.     

Crystal field of Yb<Superscript>3+</Superscript> tetragonal centers in the YbRh<Subscript>2</Subscript>Si<Subscript>2</Subscript> intermetallic compound

The spectra of electron paramagnetic resonance and inelastic neutron scattering in crystals of the heavy-fermion intermetallic compound YbRh₂Si₂ are interpreted. The phenomenological potentials of the crystal electric field of Yb³⁺ tetragonal centers and the parameter of the Hamiltonian for the spin-orbit interaction of electrons are determined from the experimental energy level schemes. A comparison of the results obtained from experimental data on electron paramagnetic resonance, inelastic neutron scattering, and Mössbauer spectroscopy shows that the most probable ground state of Yb³⁺ ions in the YbRh₂Si₂ crystal is the Kramers doublet Γ _t6 ^? .     

Electron paramagnetic resonance and photoluminescence of NaBi(MoO<Subscript>4</Subscript>)<Subscript>2</Subscript> crystals doped with gadolinium ions

The results of electron paramagnetic resonance (EPR) and photoluminescence studies of large NaBi(MoO₄)₂ crystals grown by the low-gradient Czochralski method and doped with gadolinium ions (0.1 wt %) have been presented. It has been found from the analysis of the angular dependence of EPR spectra that the gadolinium ions enter into the crystal structure in the state Gd³⁺ and occupy the bismuth position. The parameters of the EPR spectra of the gadolinium ions have been calculated and the analogy has been drawn based on these data between the specific features of the incorporation of gadolinium ions into the structures of double tungstates and molybdates. The observed shift of the maximum of the photoluminescence band of the NaBi(MoO₄)₂ crystals doped with Gd³⁺ ions with respect to the spectrum of the undoped crystal suggests the influence of gadolinium ions on the formation of the bottom of the conduction band caused by the states of the (MoO₄)^2?.     

Spectral kinetics of Ce<Superscript>3+</Superscript> ions in double-fluoride crystals with a scheelite structure

The influence of the cation composition on the spectral kinetics of Ce³⁺ ions in double-fluoride crystals with a scheelite structure is studied. The importance of the photodynamic processes induced in these crystals by the exciting radiation is demonstrated. The difference in luminescence quantum efficiency between Ce³⁺ ions in LiYF₄ and LiLuF₄ crystals is found to be due to the different lifetimes of color centers produced in the samples by the exciting radiation and to the different efficiency of the free-carrier recombination at cerium impurity centers. It is shown that Yb³⁺ ions can increase the carrier recombination rate in the crystals.     

On the distribution coefficient of Ce<Superscript>3+</Superscript> ions in LiF-LuF<Subscript>3</Subscript>-YF<Subscript>3</Subscript> solid-solution crystals

The optimum ratio of the numbers of the Y³⁺ and Lu³⁺ ions in LiF-LuF₃-YF₃ solid solutions at which the distribution (introduction) coefficient of Ce³⁺ ions is three to five times larger than that in LiYF₄ and LiLuF₄ crystals has been determined by the EPR and optical spectroscopy methods.     

Study of ESR spectra of Ce<Superscript>3+</Superscript> ions in polycrystalline Sr<Subscript>2</Subscript>B<Subscript>5</Subscript>O<Subscript>9</Subscript>Br

ESR spectra of Ce³⁺ ions in polycrystalline Sr₂B₅O₉Br were studied, and the two crystallographic positions of the Ce³⁺ ion in this compound were identified on the basis of the data obtained. The ESR spectrum of Ce³⁺ ions with local charge compensation contains a broad line indicating the existence of several types of charge compensation. ESR spectra of Ce³⁺ ions in samples activated additionally by K⁺ ions are similar to those of the regular Ce³⁺ centers, which indicates that the effect of the univalent cation on Ce³⁺ is negligible.     

Nanoparticles size effects in thermoluminescence of oxyfluoride glass-ceramics containing Sm<Superscript>3+</Superscript>-doped CaF<Subscript>2</Subscript> nanocrystals

Oxyfluoride glass-ceramic in the system SiO₂–Al₂O₃–CaF₂–SmF₃ containing Sm³⁺-doped CaF₂ nanocrystals in the range from 15 to 150 nm size were produced by using the controlled ceramization of the precursor glass. The incorporation of the Sm³⁺-dopant ion in the glass ceramic creates new electron-trapping centers and thermoluminescence (TL) method has been used in order to trace their evolution during glass ceramization. The 370 °C TL peak observed in precursor glass has been assigned to the recombination of the electrons released from the Sm²⁺-traps in the amorphous glass network. In the glass-ceramic sample containing nanocrystals with about 15 nm size the new weak TL peaks at 270, 290, and 310 °C were attributed to the recombination of the electrons released from the Sm²⁺-traps located mainly at the surface of the CaF₂ nanocrystals. In the glass-ceramic sample containing nanocrystals with about 150 nm size, the new TL peaks at 232, 270, and 302 °C size have been assigned to the recombination of the electrons released from the Sm²⁺-traps located inside the CaF₂ nanocrystals.     

Analysis of the charge transfer mechanisms responsible for the current-voltage characteristics of Ca<Subscript>4</Subscript>Ga<Subscript>2</Subscript>S<Subscript>7</Subscript>: Eu<Superscript>3+</Superscript> single crystals

The current-voltage characteristics of Ca₄Ga₂S₇: Eu³⁺ single crystals are measured for the first time, and the processes affecting these characteristics are analyzed theoretically. It is demonstrated that Ca₄Ga₂S₇: Eu³⁺ single crystals are high-resistance semiconductors with a resistivity of ～10⁹ Ω cm and a relative permittivity of 10.55. The electrical properties of the studied materials are governed by traps with activation energies of 0.13 and 0.19 eV and a density ranging from 9.5×10¹⁴ to 2.7×10¹⁵ cm^?3. The one-carrier injection is observed in weak electric fields. In electric fields with a strength of more than 4×10³ V/cm, traps undergo thermal field ionization according to the Pool-Frenkel mechanism. At low temperatures and strong fields (160 K and 5×10⁴ V/cm), the electric current is most likely due to hopping conduction by charge carriers over local levels in the band gap in the vicinity of the Fermi level.     

Electron paramagnetic resonance of Mn<Superscript>2+</Superscript> ions in single crystals of yttrium aluminum borate YAl<Subscript>3</Subscript>(BO<Subscript>3</Subscript>)<Subscript>4</Subscript>

Single crystals of yttrium aluminum borate YAl₃(BO₃)₄ doped with manganese ions are studied using electron paramagnetic resonance spectroscopy. It is shown that manganese ions introduced at low concentrations into the sample predominantly occupy yttrium ion sites in the crystal structure. The shape of the electron paramagnetic resonance spectrum unambiguously indicates that the valence of manganese ions in this case is equal to 2+. The parameters of the spin Hamiltonian of Mn²⁺ ions in the YAl₃(BO₃)₄ matrix are determined at room temperature. The magnitude and sign of the fine structure parameter D allow the conclusion that the YAl₃(BO₃)₄ single crystals doped with manganese ions have a strong crystal field at the yttrium ion sites and easy-axis anisotropy.     

Electron paramagnetic resonance of Ce<Superscript>3+</Superscript> and Nd<Superscript>3+</Superscript> impurity ions in YBa<Subscript>2</Subscript>Cu<Subscript>3</Subscript>O<Subscript>6.13</Subscript>

The electron paramagnetic resonance (EPR) spectra of Ce³⁺ and Nd³⁺ impurity ions in unoriented powders of the YBa₂Cu₃O_6.13 compound are observed and interpreted for the first time. It is demonstrated that, upon long-term storage of the samples at room temperature, the EPR signals of these ions are masked by the spectral line (with the g factor of approximately 2) associated with the intrinsic magnetic centers due to the significant increase in its intensity.