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1.
RC电路时间常数的电压对称法快速测量   总被引:1,自引:0,他引:1  
研究发现,在因果周期方波信号激励下,一阶动态电路的稳态响应是因果周期信号.设方波信号电压的最大值u0,电容电压的最大值uCmax和最小值uCmin满足关系u0-uCmax=uCmin.电容电压波形关于时间轴有特殊的对称性.利用RC电路稳态响应的电压对称性,可导出电路时间常数r的快速测量方法和计算公式,为电容量测量提供可靠的快捷方法.  相似文献   

2.
本文处理了含激波的柱对称或球对称抛射体超音速统流Mach-Zehnder干涉图分析的Abel变换问题。我们对一般的Abel积分方程研究了具有有限个间断点的解的某些性质;将其应用到Mach-Zehnder干涉图的干涉条纹移动δ(x)和密度ρ(x)间的Abel变换上,得到了三个有明显物理意义的结论,(1)干涉图上的任一直线上的干涉条纹移动δ(x)是x的连续函数;(2)若在截面1-1上的圆环r=c处有激波,则当x→c_时,δ’(x)~L/(c-x)~(1/2);(3)若除尖点c外,干涉条纹移动δ(x)是光滑的,limδ’(x)存在,且当x→c_时,δ’(x)~L/(c-x)~(1/2),则流场中于圆环r=c处出现激波,在激波两侧密度跳跃值为Δρ=λ*L/K(2c)~(1/2),且对r≥c和r相似文献   

3.
利用电子束蒸发方法将MgB2超导薄膜沉积到Al2O3(001)衬底上.采用标准的四引线法研究了磁场平行和垂直超导薄膜ab平面下的电阻转变.一个激活能模型 U(T,H)= U0(1-T/(Tc+δ))n (1-H/Hc2(0))m被建立用来分析超导薄膜磁通线的激活能和电阻转变,结果表明该模型能够在整个转变温度范围描述超导体磁通线的激活能和电阻转变.另外,利用多项式Hc2(t)=Hc2(0)+At+Bt2分析了MgB2/Al2O3超导薄膜的上临界磁场,获得了该超导薄膜的各向异性参数γ=Hc2ab(0)/Hc2c(0)= 2.26.  相似文献   

4.
本文给出了无箔二极管物理特性的数值模拟研究结果。研究得到了二极管电流与二极管结构参数、二极管电压以及外加磁场强度等参数的变化关系特性,并且应用这些关系特性得到了在外加磁场强度足够大情况下二极管电流的近似表达为Ib=(7.5/x)(x+(0.81-x)/(1+0.7Ld2/δr))(r2/3-1)3/2,其中Ld为阴阳极间距;Rc为阴极发射端面的外半径;Rp为漂移管管壁半径;x=ln(Rp/Rc),δr =Rp-Rc。这一表达式在大量二极管结构参数和二极管电压参数情况下与数值模拟结果在10%误差范围内相一致,能够比较准确的表达无箔二极管的电流电压关系。  相似文献   

5.
借助光子导出了E=mc2和m=(m0)/(1-v2/c2).  相似文献   

6.
鲍城志 《物理学报》1962,18(8):411-421
【摘 要】在本论文里,作者对一个由下列形式的三阶非线性微分方程A(d3δ)/(dt3)+(d2δ)/(dt2)-Acotδ(dδ)/(dt)(d2δ)/(dt2)+((PiA)/M)cotδ+Csin2δ)(dδ)/(dt)+ +Bsinδ-(Pi)/M=0。所表征的电力机械振荡问题,进行了透彻的拓扑形象分析,并提出了一简易图解法来计算这振荡系统的性能。文中还举出一实例来说明这种分析方法。  相似文献   

7.
中学物理实验参考资料《有效数字和误差》(山西人民出版社,1984年)练习题五2—(4)题中(p.71)给出函数式 f=ab/(a-b)(ab) (1) 在练习题答案中又给出了(1)式的偶然误差传递式(p.76),f的相对误差δf为δf=Δa/a+Δb/b+(Δa+Δb)/(a-b) (2) 公式(2)是一个错误的误差传递公式。因为根据误差传递理论,间接测量偶然误差进行算术合成时,任意函数的通用误差传递式(相对误差)为ΔF/F=|  相似文献   

8.
郭世宠  蔡诗东 《物理学报》1984,33(6):861-866
电阻率型m≥2的撕裂模在线性不稳定性阈值附近的非线性演化方程可以表示为 ?-Q2A+K2/2A2à-Q2(δ△1e)/(△1e)A3=0。这里A为模的幅值,Q为线性增长率,K为模的波矢,△e为线性模匹配计算中的外区解的对数微分差,δ△1e为非线性效应对于对数微分差的贡献。本文除在拟线性近似下推导出该方程外,还仔细讨论了该模的非线性行为。在对称电流分布sheet pinch模型的特例下,可以证明δ△1e=0,不存在新的平衡点。 关键词:  相似文献   

9.
本文提出一个非晶态非过渡金属超导体的T_c经验公式,T_c=Aλ<ω>~(1/2)/(<ω>/ω_0+(1+λ)/20),式中A=(1/5)~(K~(1/2))。计算值和实验值,以及和Garland理论值的比较表明,T_c经验公式能很好地描述非晶态超导体的T_c值。  相似文献   

10.
1问题的引出【题目】如图1所示,电源电压为200V,两个电容器C1,C2完全相同,静电计读数U和电压表读数U′,以下结果正确的是A.U=100V,U′=100VB.U=0,U′=200VC.U=200V,U′=0D.U=100V,U′=0图1错解:许多学生(甚至教师)认为电压表和静电计都是测量电压的仪器,两者的读数应相同,错选选项A.静电计是研究  相似文献   

11.
An analytical model of the nonlinear bubble evolution of single-mode, classical Rayleigh-Taylor instability at arbitrary Atwood numbers (A(T)) is presented. The model is based on an extension of Layzer's theory [Astrophys. J. 122, 1 (1955)] previously applied only to the fluid-vacuum interfaces (A(T) = 1). The model provides a continuous bubble evolution from the earlier exponential growth to the nonlinear regime when the bubble velocity saturates at U(b) = square root of [2A(T)/(1+A(T)) (g/C(g)k)], where k is the perturbation wave number, g is the interface acceleration, and C(g) = 3 and C(g) = 1 for the two-dimensional and three-dimensional geometries, respectively.  相似文献   

12.
We study the structural properties of self-attracting walks in d dimensions using scaling arguments and Monte Carlo simulations. We find evidence of a transition analogous to the Theta transition of polymers. Above a critical attractive interaction u(c), the walk collapses and the exponents nu and k, characterizing the scaling with time t of the mean square end-to-end distance approximately t(2nu) and the average number of visited sites approximately t(k), are universal and given by nu=1/(d+1) and k=d/(d+1). Below u(c), the walk swells and the exponents are as with no interaction, i.e., nu=1/2 for all d, k=1/2 for d=1 and k=1 for d>/=2. At u(c), the exponents are found to be in a different universality class.  相似文献   

13.
The growth rate of the ablative Rayleigh-Taylor instability is approximated by gamma = square root[kg/(1 + kL)] - beta km/rho(a), where k is the perturbation wave number, g the gravity, L the density scale length, m the mass ablation rate, and rho(a) the peak target density. The coefficient beta was evaluated for the first time by measuring all quantities of this formula except for L, which was taken from the simulation. Although the experimental value of beta = 1.2+/-0.7 at short perturbation wavelengths is in reasonably good agreement with the theoretical prediction of beta = 1.7, it is found to be larger than the prediction at long wavelengths.  相似文献   

14.
The excitation and propagation of finite-amplitude low-frequency solitary waves are investigated in an argon plasma impregnated with kaolin dust particles. A nonlinear longitudinal dust acoustic solitary wave is excited by pulse modulating the discharge voltage with a negative potential. It is found that the velocity of the solitary wave increases and the width decreases with the increase of the modulating voltage, but the product of the solitary wave amplitude and the square of the width remains nearly constant. The experimental findings are compared with analytic soliton solutions of a model Korteveg-de Vries equation.  相似文献   

15.
对RC充,放电实验中易于被忽视的:(1)方波频率对电容充,放电的影响;(2)对RC电路时间常数实验测定数值小于理论值(RC乘积)等问题,给出了理论分析和精确的实验结果。  相似文献   

16.
We have investigated the quantum-statistics behavior of the exciton-biexciton system from the photoluminescence properties in (GaAs) m /(AlAs) m type-II superlattices with m = 12 and 13 monolayers, where the lowest-energy type-II exciton consists of the n = 1 X electron of AlAs and n = 1 o heavy hole of GaAs. The long exciton lifetime of the order of w s due to the indirect transition nature enables us to obtain precisely the density relation between the exciton and biexciton from the line-shape analysis of time-resolved photoluminescence spectra. In a relatively low exciton-density region, the biexciton density obeys a well-known square law. At an exciton density around 1 2 10 10 cm m 2 , the biexciton density suddenly increases with a threshold-like nature. This behavior, which is realized at a bath temperature up to 8 K under an excitation power of the order of 100 mW/cm 2 , results from the characteristics of Bose-Einstein statistics of the exciton-biexciton system.  相似文献   

17.
崔言程  杨汉武  高景明  李嵩  时承瑜  伍麒霖 《强激光与粒子束》2018,30(10):105001-1-105001-4
磁开关因其独特的饱和导通机制而在脉冲功率技术领域应用广泛,利用磁开关饱和前后电感差异大的特点,可以将其用作撬断开关来陡化脉冲后沿。利用金属氧化物压敏电阻的稳压特性,能在负载上得到具有一定平顶的脉冲准方波,进而可通过改变磁开关的伏秒积来进行脉宽调整。提出一种脉宽可调的高压脉冲发生器技术方案,利用压敏电阻产生高压脉冲准方波,用磁开关作为撬断开关来陡化脉冲后沿,并通过改变磁开关复位电流的大小来控制磁开关的复位深度,进而实现脉宽可调。首先进行了理论分析及软件模拟研究,然后基于模拟结果开展了初步实验研究。初步实验得到的负载电压波形后沿小于30 ns,脉宽可调范围大约30%,验证了磁开关的后沿陡化效果以及用于脉宽调整的可行性。  相似文献   

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