Magnetic properties of Co implanted TlInS2 and TlGaSe2 crystals

The results of investigations of magnetic properties of ternary layered TlInS₂ and TlGaSe₂ ferroelectric crystals implanted with 40 keV Co⁺ ions at the fluency of 1.0×10¹⁷ ion cm^?2 are presented. It has been revealed that high-fluence implantation with Co ions results in metal nanoparticle formation in the near-surface irradiated region. The calculations of Co concentration profiles and SEM studies show that the metal nanoparticles are located under the surface at the depth of about 20 nm, and they originate the irregular-shaped bumps on the surface. The Co-implanted samples exhibited superparamagnetic behaviour at high temperatures and ferromagnetic state at temperatures lower than T_b, where T_b is a “blocking temperature” of superparamagnetic nanoparticles. It has been suggested that the observed phenomena can be discussed on the basis of strong magnetic dipolar interaction between Co nanoparticles inside the granular composite film formed as a result of implantation.     

Ion bombardment induced phase transformations and inert gas mobility in the semiconductors Ge,Si, and GaAs

Abstract

The present study contributes some new aspects to the general understanding of the ion implantation behaviour of 3 common semiconductor materials, and of diffusion processes in these materials. Single crystals of Si, Ge, and GaAs were bombarded with Kr- or Xe-ions at energies of 40 or 500 keV and doses between 10¹¹ and 2 × 10¹⁶ ions/cm². Gas release measurements and Rutherford scattering of 1 MeV He⁺-ions combined with channeling were used to study bombardment damage (amorphization) and inert gas diffusion. At low bombardment doses (10¹¹ ions/cm²) and energy (40 keV), no damage was observed and the gas release was compatible with volume diffusion resembling Group I and VIII behaviour. Hence, the pre-exponential terms, D ₀, were low (range 10-^5±1 cm² sec^?1) and the activation enthalpies, Δ H, were much lower than those of self-diffusion or of diffusion of Group III and V elements. The Δ H's for gas diffusion followed the relation Δ H = (1.05±0.1) × 10^?3 T_m eV with the melting point, T_m , in °K. The mechanism of gas mobility might be the Turnbull dissociative mechanism. Rutherford scattering and channeling data indicated that part of the gas occupied lattice sites.

At higher doses, the bombarded layers turned amorphous. Channeling experiments showed a coincidence in temperatures for a gas release process different from the above one of volume diffusion, and recrystallization of the disordered layer to the single crystalline state. Both processes occurred in the temperature range 0.60 to 0.65 T_m . The gas release indicated a (partial) single jump character with implied Δ H's following the relation Δ H = (2.1±0.1) × 10^?3 T_m eV. Contrary to previous results on oxides, this new gas release occurred at temperatures near to those or even above those of volume diffusion of the gas.

Due to the easy formation of an amorphous layer it was difficult to observe the retarded release (trapping of gas) that has been found in many materials at high gas and damage concentrations. However, in a separate series of experiments with 500 keV Kr-ions, a release retarded with respect to volume diffusion of the gas was observed in Si and Ge.     

The scattering of slow neutrons by cobalt

Different techniques have been used to determine with slow neutrons the coherent scattering amplitude b_c and the total scattering cross-section σ_sc of Co. We found values for the bound atom b_c=2.78+0.04 fm and for the free nucleus σ_sc=5.95+0.05 barns.From these quantities, the spin state scattering amplitudes b₊ and b_? corresponding to the compound nucleus states of spin I+1/2 or I?1/2 have been determined as b₊=?2.78±0.04 fm and b_?=+9.91±0.06 fm. These results are not in agreement with previous data, but they are found to be consistent with data obtained from resonance parameters.     

Emission of quasi-thermal ions from a solid bombarded by cluster ions

Comparative studies of the emission of quasi-thermal atomic and cluster ions from V, Nb, Ta, Au, and In targets bombarded by cluster ions Au _m ⁻(m = 1–9), as well as from Si and Bi targets bombarded by cluster ions Au _m ⁻(m = 1–9) and Bi _m ⁻(m = 1–5), with energy E ₀ ranging from 6 to 21 keV are carried out. In the case of bombardment by heavy cluster ions, the fraction of the quasi-thermal component in the energy spectra of sputtered atomic ions reaches 50 (for V, In, and Au), 70 (Nb), or more than 90% (Ta). In addition, quasi-thermal ions play a considerable part in the emission of small cluster ions Au₂⁺, In₂⁺, In₃⁺, and Bi _n ⁺(n = 2–7). The results of the generalizing investigation favor the presence of thermal spike conditions at cluster bombardment and their appreciable contribution to the emission of atomic and small cluster ions.     

Quantitative surface analysis using ion-induced secondary ion and photon emission

The secondary ion and photon yield from a stainless steel target bombarded with Ar⁺ ions has been studied. The yields have been measured in a variety of oxygen background pressures. From the distribution of photon intensities, an effective arc temperature, T, for the bombarded surface has been derived. An empirical relationship has then been used to obtain the free electron density N_e, of the ion bombardment induced surface “plasma”. The derived values of (T, N_e) are then used in the Andersen-Hinthorne model, to calculate the changes in the Cr/Fe ratio as a function of the oxygen background pressure. The Cr/Fe ratio under the cleanest conditions available agrees very well with an electron microprobe measurement of the same ratio, while the changes in the Cr/Fe ratio as a function of oxygen pressure are consistent with electron spectroscopy studies of the changes in the Cr/Fe ratios in oxidised stainless steel.     

Atomic excitations in sputtering studied with the use of composite targets

Atomic excitation phenomena in sputtering have been studied with the following combinations of projectile and target. (i) Be, B, Mg, Al, and Si bombarded with 80 keV Ar⁺ at UHV as well as with the target chamber backfilled with oxygen. (ii) Mg bombarded with 80 keV O⁺, F⁺, Ne⁺, Na⁺ Cl⁺, and Ar⁺. (iii) MgO, MgF₂, MgCl₂, MgSO₄, and several alkali halides bombarded with 80 keV Ar⁺ at UHV. Results are discussed. It is concluded that the excited-state formation takes place as electron tunneling at a fairly large separation between the target surface and the particle being sputtered. It is suggested with composite targets containing a metal element that excitation takes place predominantly at locations of the target surface where the work function is low, due to a thin, metallic surface layer, and that production of ground-state, positive secondary ions mainly takes place at target surface regions with high work function. For semiconductors, the changes caused by presence of oxygen are related to the change of the bonds in the solid from being of covalent nature to being fractionally ionic.     

Low-temperature x-ray diffraction studies of the crystallographic parameters and thermal expansion of (CH3)2NH2Al(SO4)2 · 6H2O crystals

The a, b, c, and β crystallographic parameters of the (CH₃)₂NH₂Al(SO₄)₂ · 6H₂O crystal (DMAAS) have been measured by x-ray diffraction in the 90–300-K temperature range. The thermal expansion coefficients along the principal crystallographic axes α_a, α_b, and α_c have been determined. It was shown that, as the temperature is increased, the parameter α decreases and b increases, whereas c decreases for T<T _c (where T _c is the transition temperature) and increases for T>T _c, so that one observes a minimum in the c=f(T) curve in the region of the phase transition (PT) temperature T _c ～ 152 K. The thermal expansion coefficients α_a, α_b, and α_c vary in a complicated manner with increasing temperature, more specifically, α_a and α_c assume negative values at low temperatures, and the α_a=f(T), α_b=f(T), and α_c=f(T) curves exhibit anomalies at the PT point. The crystal has been found to be substantially anisotropic in thermal expansion.     

Approximant crystals of icosahedral Mg–(Ga,Al)–Zn alloys

The zero field cooled (ZFC) and field cooled (FC) low-field magnetic moment m of a dense frozen ferrofluid containing Fe₅₅Co₄₅ particles of size 4.6nm in hexane exhibits irreversibility at temperatures T?T _b≈ 30?K. FC in μ ₀ H ≤ 1?T gives rise to shifted minor hysteresis loops below T _b. At T _c≈ 10?K, sharp peaks of m ^ZFC and of the ac susceptibility χ ′, a kink of the thermoremanent magnetic moment m ^TRM, a sizeable reduction of the coercive field H _c, and the appearance of a spontaneous moment m ^SFM indicate a phase transition with near mean-field critical behaviour of both m ^SFM and χ ′ . These features are explained within a core-shell model of nanoparticles, whose strongly disordered shells gradually become blocked below T _b, while their soft ferromagnetic cores couple dipolarly and become superferromagnetic (SFM) below T _c.     

Saha’s ionization equation for highZ elements

Saha’s ionization equation has been solved for highZ elements with the aim of providing input for opacity calculations. Results are presented for two elements, tungsten and uranium. The ionization potentials have been evaluated using the simple Bohr’s formula with suitable effective charges for ions. The reliability of the free electron density, ion concentrations, etc., obtained from the Saha’s equation solutions has been checked by comparing theP _T andE _T computed from them with those given by the Thomas-Fermi-Dirac equation of state. The agreement between the two is good from temperatures above 0.2 keV.     

Critical Exponents of Kappa Carrageenan in the Coil-Helix and Helix-Coil Hysteresis Loops

The steady-state fluorescence technique was used to study coil-helix (sol-gel) and helix-coil (gel-sol) transitions of the kappa carrageenan-water system with various carrageenan contents. Fluorescence (I) and scattered light (I_sc ) intensities were measured against temperature to determine critical phase transition temperatures and exponents. It was observed that the coil-helix transition temperatures, T_ch were much lower than the helix-coil (T_hc ) transition temperatures due to the hysteresis of the phase transition loops. The gel fraction exponent (β) was measured and found to be in accord with the classical Flory-Stockmayer model.     

Determination and analysis of opiates in complex mixtures by surface-ionization mass spectrometry

The results of studies of the analytical opportunities of surface-ionization mass spectrometry (SIMS) for high-sensitivity and selective detection and analysis of opiate mixtures—natural opium, crude heroin, and narcotic analgesic omnopon—are presented. The experiments were carried out using an MX-1320 chemical mass spectrometer modernized for studying surface ionization (SI). It was ascertained that the opiate mixtures are ionized by highly efficient surface ionization. The bands of M⁺ (for papaverine), (M-H)⁺, (M-H-2nH)⁺, (M-R)⁺, and (M-R-2nH)⁺ ions, where M is a molecule, H is a hydrogen atom, R is a radical, are observed in the mass spectra; they are the sum of the SI mass spectra of components of the mixtures. The series of bands of ions with m/z of 144 and 146 that is characteristic of SI-morphinelike molecules is the main one in the mass spectrum of crude heroin, while for omnopon and natural opium this series is the main at low temperatures of a thermionic emitter (up to ∼900 K). At high temperatures of the thermionic emitter, the band series with m/z of 218 and 220 is the main series. Studies of natural opium, crude heroin, and omnopon have shown that the SIMS method allows analyzing mixtures without preliminary chromatographic separation thereof. The study also contains the results of comparative analyses of opiate mixtures by SIMS and chromate- and mass spectrometry (HP-6890) with electronic ionization.     

Shape- and field-dependent Morin transitions in structured α-Fe2O3

We report shape- and field-dependent magnetic properties of ellipsoid-, spindle-, flattened- and rhombohedra-shaped α-Fe₂O₃ samples prepared by solvothermal technique. We observed that a magnetic spin-flip mechanism, mostly known as Morin transition (T_M), depends on the shape of α-Fe₂O₃ as well as on the applied magnetic field. In each of these structures the obtained value of T_M was less than its bulk value of 263 K. We observed that T_M shifted from highest 251.4 K for ellipsoid to lowest 220.8 K for rhombohedra structure, with intermediate values of T_M for the other two structures. However, for rhombohedra structure T_M shifted from 220.8 to 177.5 K under the external magnetic field of 100 Oe-30 kOe, respectively. The observed lowering of T_M in the structured sample was analyzed in terms of elementary size, shape of the nanocrystallites, lattice parameters and occupancy of Fe⁺³ ions as well. These parameters were determined from the Rietveld refinement process using MAUD software.     

Spectres auger et sections efficaces d'ionisation de la couche L23 du magnésium et de l'aluminium sous impact de protons et d'ions lourds (10–100 keV)

A comparison of Auger structures observed on the energy distributions of secondary electrons emitted from Mg and A1 solid targets bombarded by either light particles (H⁺ and He⁺) or heavy ions (Ne⁺, Ar⁺, …) is presented. With incident protons, it essentially appears a broad peak corresponding to a L₂₃VV transition and a weak shoulder due to the surface and bulk plasmon excitation. The Auger structures obtained with heavy ions are richer and the peaks which compose it are sharper. Such atomic-like structures correspond to Auger transitions from excited (with one or two L₂₃ holes) moving recoiling atoms. The experimental L₂₃ Mg and A1 ionization cross sections were determined from Auger spectra. In H⁺?Mg (or A1) collisions our results are in good agreement with the theoretical values calculated in a PWBA model. In the case of heavy ion-target interactions, we compared the experimental measurements with ionization cross section calculations obtained in a Landau-Zener model.     

Anomalous enhancement of negative sputtered ion emission by oxygen

Enhancement of negative sputtered ion yields by oxygen (either O⁺₂ bombardment or O₂ gas with Ar⁺ bombardment) is demonstrated for Si^?, As^?, P^?, Ga^?, Cu^? and Au^?, sputtered from a variety of matrices. Because oxygen also enhances positive ion yields of the same species, this effect cannot be simply explained on the basis of existing sputtered ion emission models. To rationalize these phenomena, a surface polarization model is developed which invokes localized electron emissive or electron retentive sites associated with differently oriented surface dipoles in the oxygenated surface. Such sites are considered to dominate the emission of negative and positive ions respectively. The model is shown to correctly predict that Au⁺ and Au^? ion yields are much more strongly enhanced by oxygen in dilute Au-Al alloys than in pure gold.     

Electronic phase separation in TmBa2Cu4O8

The NQR spectra of Cu(2) in the superconductor TmBa₂Cu₄O₈ are studied at temperatures from 300 to 4.2 K. In analyzing the spectra it is assumed that the NQR line of each isotope contains two Gaussian components — narrow (n) and broad (b). It is discovered that the NQR frequencies have a minimum at the temperature T*=150 K. The frequencies of the components of the spectrum are close at temperatures from T* to 4.2 K and differ substantially at temperatures T>T*. Both components are broadened as the temperature decreases, but this broadening occurs especially rapidly at temperatures T<T*. The relative intensity of the narrow component I _n/(I _n+I _b) equals 1/6 for T=225−160 K, increases abruptly at T=T*, and remains constant (1/3) at temperatures T from 125 to 4.2 K. Analysis of the experimental data showed that the anomalous temperature dependences of the Cu(2) NQR spectra could be due to electronic phase separation (stratification) in the CuO₂ planes at temperatures T⩽T*. Pis’ma Zh. éksp. Teor. Fiz. 63, No. 3, 214–219 (10 February 1996)     

Secondary ion emission from Si bombarded with large Ar cluster ions under UHV conditions

Si was bombarded with size-selected 40 keV Ar cluster ions and positive secondary ions were measured using the time-of-flight technique under high and ultra-high vacuum (HV and UHV respectively) conditions. Si⁺ ions were main species detected under the incidence of 40 keV Ar cluster ions, and the yields of Si cluster ions such as Si₄⁺ were also extremely high under both conditions. On the other hand, oxidized secondary ions such as SiO⁺ were detected with high intensity only under the HV condition. The yield ratios of oxidized ions decreased in UHV to less than 1% of their values in HV. The effect of residual gas pressure on Si cluster ion yields is relatively low compared to oxidized ions, and the UHV condition is required to obtain accurate secondary ion yields.     

A comparative study of ESD of positive and negative ions from CO on tungsten

Electron stimulated desorption of O^? ions has been demonstrated from the CO/W system. Ion yields are shown to be approximately a factor of 50 smaller for O^? than for O⁺. The O^? species is shown to originate from both α-CO adsorption states with an estimated 80% of the O^? signal coming from the CO⁺ producing α-state. Preliminary results indicate that the ion energy distribution for O^? is broader and peaks at a higher energy than for the O⁺ ions.     

N2微空心阴极放电特性及其阴极溅射的PIC/MC模拟

采用两维PIC/MCC模型模拟了氮气微空心阴极放电以及轰击离子 (N₂⁺,N⁺) 的钛阴极溅射. 主要计算了氮气微空心阴极放电离子 (N₂⁺,N⁺) 及溅射原子Ti的行为分布, 并研究了溅射Ti 原子的热化过程. 结果表明: 在模拟条件下, 空心阴极效应是负辉区叠加的电子震荡; 在对应条件下, 微空心较传统空心放电两种离子 (N₂⁺,N⁺) 密度均大两个量级, 两种离子的平均能量的分布及大小几乎相同; 在放电空间N⁺的密度约为N₂⁺的1/6, 最大能量约大2倍; 在不同参数 (P, T, V)下, 轰击阴极内表面的氮离子(N₂⁺,N⁺)的密度近似均匀, 其平均能量几乎相等; 从阴极溅射出的Ti原子的初始平均能量约6.8 eV, 离开阴极约0.15 mm处几乎完全被热化. 模拟结果为N₂微空心阴极放电等离子体特性的认识提供了参考依据. 关键词： 微空心阴极放电 PIC/MC模拟 2等离子体')" href="#">N₂等离子体     

Magnetostriction of the spin-Peierls compound CuGeO3

The longitudinal and transverse magnetostriction λ of the spin-Peierls compound CuGeO₃ in the b-c plane is measured in magnetic fields up to 20 T both above and below the transition temperature T _sp=14.3K. It is found that for a given crystallographic direction the value of magnetostriction is weakly dependent on the magnetic field direction. In the uniform U phase at T⩾T _sp, λ is negative and approximately equal in the b and c directions, while in the dimerized D phase at T<T _sp, λ is positive and λ _b >λ _c . At low temperatures, λ increases sharply at the magnetic-field-induced transition from the dimerized to the magnetic M phase. The experimental data allow estimation of the stress derivatives of the antiferromagnetic intrachain exchange interaction parameter and of the stress dependence of the critical field of the D-Mphase transition. Pis’ma Zh. éksp. Teor. Fiz. 64, No. 3, 156–159 (10 August 1996) Published in English in the original Russian journal. Edited by Steve Torstveit.     

重离子轰击Ta靶引起的多电离效应

在兰州重离子加速器国家实验室分别测量了H⁺, He²⁺, Ar¹¹⁺和Xe²⁰⁺离子轰击Ta表面过程中辐射的X射线谱, 并得到了Ta特征X射线谱中M_γ (M₃N₅)和N_αβ (M_4,5N_6,7)线的强度, 即I_γ和I_αβ. 分析结果表明, 强度比值I_γ/I_αβ 随着入射离子原子序数的增加而显著增加, 这是由于碰撞过程中Ta原子的多电离效应使M₃支壳层的荧光产额ω₃产生了显著增强.