Stability of siloxane couplers on pure and fluorine doped SnO2 (110) surface: A first principles study

Siloxane is a favorable candidate as an anchor group that can be used to bind organic molecules to SnO₂ surfaces, with a wide range of practical applications. Therefore, adsorption geometries and energies of siloxane coupler on the SnO₂ (110) surface have been investigated in this study using quantum-chemical periodic density functional theory (DFT) calculations. We present a comparative study of different siloxane adsorption arrangements on pristine and fluorine doped SnO₂ surface. According to the calculations, the surface doping with fluorine leads to stabilization of the siloxane network at the stannic oxide surface. The trend is analyzed in terms of additional charge provided by F impurities to the chemisorbed oxygen atoms thus increasing the ionicity of their bonding. Implications of the current findings for the design of organic-metal oxide interface with better thermo-stability and improved electronic properties are discussed.     

Effect of solvent volume on the physical properties of undoped and fluorine doped tin oxide films deposited using a low-cost spray technique

Undoped and fluorine doped tin oxide films were deposited from starting solutions having different values of solvent volume (10-50 ml) by employing a low cost and simplified spray technique using perfume atomizer. X-ray diffraction studies showed that there was a change in the preferential orientation from (2 1 1) plane to (1 1 0) plane as the volume of the solvent was increased. The sheet resistance (R_sh) of undoped SnO₂ film was found to be minimum (13.58 KΩ/□) when the solvent volume was lesser (10 ml) and there was a sharp increase in R_sh for higher values of solvent volume. Interestingly, it was observed that while the R_sh increases sharply with the increase in solvent volume for undoped SnO₂ films, it decreases gradually in the case of fluorine doped SnO₂ films. The quantitative analysis of EDAX confirmed that the electrical resistivity of the sprayed tin oxide film was mainly governed by the number of oxygen vacancies and the interstitial incorporation of Sn atoms which in turn was governed by the impinging flux on the hot substrate. The films were found to have good optical characteristics suitable for opto-electronic devices.     

Ⅲ族元素掺杂对SnO2电子结构及电学性能的影响

采用密度泛函理论研究了Ⅲ族元素掺杂对SnO₂电子结构及电学性能的影响.态密度分析结果表明，以替代位存在的Ⅲ族杂质均使SnO₂的费米能级明显向低能态方向移动，使得价带顶不完全填满，因此在SnO₂中均充当受主作用.部分态密度分析结果表明，相对于掺Al的SnO₂，Ⅲ族元素中的Ga及In对费米能级附近态密度贡献较大，其主要贡献来自Ga3d态或In4d态，这预示着在SnO₂中掺Ga或In能实现更好的p型掺杂效果.电离能计算结果进一步表明，在Al，Ga及In三种元素中，替位In有最小的电离能(0.06 eV)，这说明其在SnO₂中能形成最浅的受主能级，因而在同等掺杂情况下，可引入最高浓度的空穴，从而实现最佳的p型掺杂效果. 关键词： 密度泛函理论 2')" href="#">SnO₂ Ⅲ族元素掺杂 电子结构     

F掺杂SnO2电子结构的模拟计算

采用基于密度泛函理论的平面波赝势方法对SnO₂:F体系的电子结构进行了第一性原理模拟计算.用广义梯度近似方法优化SnO₂:F体系的晶胞结构，计算了体系基态总能.通过确定F掺杂对O的优先替代位置，计算了SnO₂:F的能带结构、态密度、分波态密度.分析了F掺杂对SnO₂晶体的电子结构和晶体性质及光学吸收边的影响，从理论上得出光学吸收边发生蓝移.对不同掺杂量的体系电子结构进行了分析. 关键词： F掺杂 2')" href="#">SnO₂ 电子结构 态密度     

Resistive switching effect in metal–oxide–metal structures with ZnO:Li oxide layer

The resistive switching effect in metal–oxide–metal (MOM) structures has been investigated, where the 10% Li-doped ZnO layer was used as an oxide layer, as well as Pt and 20% fluorine doped SnO₂ (SnO₂:F) were used as a bottom electrodes. The current–voltage (I–V) and switching (I–t) characteristics of Ag/ZnO:Li/Pt and Ag/ZnO:Li/SnO₂:F structures were investigated. The unipolar resistive switching is detected in the structures with the Pt, while the use of transparent conductive SnO₂:F electrode instead of Pt, results to the bipolar memory effect.     

Unravelling the effect of Ni doping on the structural,optical and dielectric properties of nanocrystalline SnO2

Nanocrystalline pristine and Ni doped (x= 0.05, 0.10 and 0.15) SnO₂ samples are synthesized via sol-gel process. An extensive microstructure, optical and dielectric studies are performed through several analytical techniques. Analysis of the x-ray diffraction (XRD) data through Rietveld refinement confirms tetragonal crystal structure with P4₂/mnm space group for all the samples without any impurity or secondary phase. Scanning electron microscopy (SEM) images exhibit smooth surface morphology with agglomeration of the particles and energy dispersive x-ray spectra (EDS) confirm elemental composition of the samples. The average crystallite/particles size of the samples is found to increase for 5% Ni doped SnO₂ but reduces on further increase in the Ni content. Fourier transform infrared (FTIR) spectra show vibrational modes of the functional groups present in the samples. UV-visible absorption spectra indicate a red shift on Ni doping in SnO_2, ascribed to the trapping of excitons by the oxygen vacancies and thereby creating extra energy states within the bandgap. The band gap is found to diminish from 3.81 eV for pristine SnO₂ to 3.57 eV for the sample with 15% Ni concentration. Frequency dependent dielectric measurements at room temperature reveal higher values of the dielectric constant at lower frequencies that can be described on the basis of Maxwell-Wagner theory. The results demonstrate that the oxygen vacancies play a crucial role and concentration of Ni has strong influence on the microstructure, optical and dielectric behaviour of SnO₂.     

使用金属掺杂SnO2(110)作为表面催化剂的电催化CO2还原反应：通过调控Sn:O原子比例来控制产物

电催化CO₂还原反应可以产生HCOOH和CO,目前该反应是将可再生电力转化为化学能存储在燃料中的最有前景的方法之一. SnO₂作为将CO₂转换为HCOOH和CO的良好催化剂,其反应发生的晶面可以是不同的. 其中(110)面的SnO₂非常稳定,易于合成. 通过改变SnO₂(110)的Sn:O原子比例,得到了两种典型的SnO₂薄膜：完全氧化型(符合化学计量)和部分还原型. 本文研究了不同金属(Fe、Co、Ni、Cu、Ru、Rh、Pd、Ag、Os、Ir、Pt和Au)掺杂的SnO₂(110),发现在CO₂还原反应中这些材料的催化活性和选择性是不同的. 所有这些变化都可以通过调控(110)表面中Sn:O原子的比例来控制. 结果表明,化学计量型和部分还原型Cu/Ag掺杂的SnO₂(110)对CO₂还原反应具有不同的选择性. 具体而言,化学计量型的Cu/Ag掺杂的SnO₂(110)倾向于产生CO(g),而部分还原型的表面倾向于产生HCOOH(g). 此外,本文还考虑了CO₂还原的竞争析氢反应. 其中Ru、Rh、Pd、Os、Ir和Pt掺杂的SnO₂(110)催化剂对析氢反应具有较高的活性,其他催化剂对CO₂还原反应具有良好的催化作用.     

Highly conducting and crystalline doubly doped tin oxide films fabricated using a low-cost and simplified spray technique

Doubly doped (simultaneous doping of antimony and fluorine) tin oxide films (SnO₂:Sb:F) have been fabricated by employing an inexpensive and simplified spray technique using perfume atomizer from aqueous solution of SnCl₂ precursor. The structural studies revealed that the films are highly crystalline in nature with preferential orientation along the (2 0 0) plane. It is found that the size of the crystallites of the doubly doped tin oxide films is larger (69 nm) than that (27 nm) of their undoped counterparts. The dislocation density of the doubly doped film is lesser (2.08×10¹⁴ lines/m²) when compared with that of the undoped film (13.2×10¹⁴ lines/m²), indicating the higher degree of crystallinity of the doubly doped films. The SEM images depict that the films are homogeneous and uniform. The optical transmittance in the visible range and the optical band gap of the doubly doped films are 71% and 3.56 eV respectively. The sheet resistance (4.13 Ω/□) attained for the doubly doped film in this study is lower than the values reported for spray deposited fluorine or antimony doped tin oxide films prepared from aqueous solution of SnCl₂ precursor (without using methanol or ethanol).     

Development of high sensitivity ethanol gas sensor based on Co-doped SnO2 nanoparticles by microwave irradiation technique

We have successfully synthesized Co doped SnO₂ nanoparticles by a simple microwave irradiation technique. Powder X-ray diffraction results reveal that the SnO₂ doped with cobalt concentration from 0 to 5 wt % crystallizes in tetragonal rutile-type structure. The products were annealed at 600 °C for 5 h in ambient atmosphere in order to improve crystallinity and structural perfection. Transmission electron microscopy (TEM) studies illustrate that both the undoped and Co doped SnO₂ crystallites form in spherical shapes with an average diameter of 30–15 nm, which is in good agreement with the average crystallite sizes calculated by Scherrer's formula. A considerable red shift in the absorbing band edge was observed with increasing of Co content (0–5 wt %) by using UV–Vis diffuse reflectance spectroscopy (DRS). Oxygen-vacancies, tin interstitial and structural defects were analyzed using photoluminescence (PL) spectroscopy. Electron paramagnetic resonance (EPR) spectroscopic studies clearly showed that the Co²⁺ was incorporated into the SnO₂ host lattice. Ethanol gas sensitivity of pure and Co-doped (5 wt %) SnO₂ nanoparticles were experimented at ambient temperature using optical fiber based on clad-modified method. By modifying the clad exposure to ethanol vapor, the sensitivities were estimated to be 18 and 30 counts/100 ppm for undoped and Co-doped SnO₂ nanoparticles, respectively. These results show that the Co doping into SnO₂ enhances its ethanol gas sensitivity significantly.     

Effect of Er3+ doping in SnO2 semiconductor nanoparticles synthesized by solgel technique

Pure and Er³⁺ doped SnO₂ semiconductor nanoparticles have been synthesized by solgel technique. The X-ray diffraction patterns show peaks corresponding to tetragonal structure of SnO₂. No Er related impurity peaks could be observed. From the TEM micrographs average crystallite size was estimated to be 12 nm. The UV–visible absorption spectra of SnO₂:Er showed blue shift in the absorption shoulder compared with the spectra of undoped SnO₂ sample. Photoluminescence emission intensity of SnO₂:Er nanoparticles was found to be quenched with increasing concentration of Er³⁺ ions. The electron spin resonance (ESR) analysis of Er doped SnO₂ nanoparticles indicated Er in 3 + state with g = 2.     

Evaluation of cerium doped tin oxide nanoparticles as a sensitive sensor for selective detection and extraction of cobalt

Chemo-sensor technology demands to design a single, preconcentrator based sensing system having higher sensitivity, sufficient selectivity and efficient removal of metal ions with simple operating and recognition methodology. Here we effectively deliberated Ce doped SnO₂ nanoparticles based sensing system which can be exploited for the recognition and extraction of Co(II) ions in a single step by strong interaction between Ce doped SnO₂ nanoparticles and Co(II). The sensing ability of Ce doped SnO₂ nanoparticles were deliberated for a selective removal of cobalt using inductively coupled plasma-optical emission spectrometry. The sensing ability of Ce doped SnO₂ is studied for various metal ions, such as Cd(II), Co(II), Cr(III), Cu(II), Fe(III), Ni(II) and Zn(II) but the designed sensor was most selective toward Co(II) which was 5000 time more sensitive to Co(II) rather than different interfering metal ions. In addition, the desorption study for regeneration of Ce doped SnO₂ nanoparticles was carried out. This novel approach provides a new route for simultaneous detection and removal of Co(II) in a single step and can be a time and cost alternative tool for environmental safety.     

Size-dependent luminescence of Sm3+ doped SnO2 nano-particles dispersed in sol-gel silica glass

Sol-gel glasses with composition (100?x)SiO₂–xSnO₂ doped with 0.4 mol% of Sm³⁺, with x ranging from 1 to 10, have been successfully synthesized. Transparent doped nano-glass-ceramics were prepared by thermal treatment of the precursor glasses at 900°C during 4 hours, leading to nanocomposites comprising SnO₂ nanocrystals embedded into an amorphous SiO₂ phase. A structural analysis in terms of X-ray Diffraction and High Resolution Transmission Electron Microscopy confirms the precipitation of SnO₂ nanocrystals within the glassy matrix. The mean radius of the obtained SnO₂ nanocrystals, ranging from 2.1 to 4.7 nm calculated by the Scherrer and Brus equations, similar to the Bohr’s exciton radius, constitutes a wide band-gap semiconductor quantum-dot system. Energy transfer from SnO₂ nanocrystal host to Sm³⁺ ions is confirmed by luminescence spectra and analyzed as a function of SnO₂ concentration, showing an evolution that could be ascribed to selective excitation of nanocrystal sets with predetermined size. Besides, a study of the luminescence as a function of temperature helps to clarify the involved energy transfer mechanisms.     

Tuning electronic properties of In<Subscript>2</Subscript>O<Subscript>3</Subscript> nanowires by doping control

We present two effective routes to tune the electronic properties of single-crystalline In₂O₃ nanowires by controlling the doping. The first method involves using different O₂ concentrations during the synthesis. Lightly (heavily) doped nanowires were produced by using high (low) O₂ concentrations, respectively, as revealed by the conductances and threshold voltages of nanowire-based field-effect transistors. Our second method exploits post-synthesis baking, as baking heavily doped nanowires in ambient air led to suppressed conduction and a positive shift of the threshold voltage, whereas baking lightly doped nanowires in vacuum displayed the opposite behavior. Our approaches offer viable ways to tune the electronic properties of many nonstoichiometric metal oxide systems such as In₂O₃, SnO₂, and ZnO nanowires for various applications. PACS 85.35.-p     

Growth mechanism and photoluminescence of the SnO2 nanotwists on thin film and the SnO2 short nanowires on nanorods

SnO2 nanotwists on thin film and SnO2 short nanowires on nanorods have been grown on single silicon substrates by using Au-Ag alloying catalyst assisted carbothermal evaporation of SnO2 and active carbon powders.The morphology and the structure of the prepared nanostructures are determined on the basis of field-emission scanning electron microscopy(FESEM),transmission electron microscopy(TEM),selected area electronic diffraction(SAED),high-resolution transmission electron microscopy(HRTEM),x-ray diffraction(XRD),Raman and photoluminescence(PL) spectra analysis.The new peaks at 356,450,and 489 nm in the measured PL spectra of two kinds of SnO2 nanostructures are observed,implying that more luminescence centres exist in these SnO2 nanostructures due to nanocrystals and defects.The growth mechanism of these nanostructures belongs to the vapour-liquid-solid(VLS) mechanism.     

Studies on the structural and electrical properties of spray deposited SnO2:Sb thin films as a function of substrate temperature

Thin films of antimony doped tin oxide (SnO₂:Sb) were prepared by spray pyrolysis technique using SnCl₂ as precursor with the various antimony doping levels ranging from 1 to 4 wt%. The XRD analysis showed that the undoped SnO₂ films grow in (211) preferred orientation whereas the Sb doped films grow in (200) plane. Scanning electron microscopy studies indicated that the surface of the films prepared with lower doping level (1 wt%) consists of larger grains whereas those prepared with higher doping levels (>1 wt%) consist of smaller grains. The sheet resistance has been found to be reduced considerably (2.17 Ω/□) for Sb doped films. To the best of our knowledge this is the lowest sheet resistance obtained for Sb doped SnO₂ thin films.     

Optical band-edge absorption of oxide compound SnO2

Tin oxide (SnO₂) is an important oxide for efficient dielectrics, catalysis, sensor devices, electrodes and transparent conducting coating oxide technologies. SnO₂ thin film is widely used in glass applications due to its low infra-red heat emissivity. In this work, the SnO₂ electronic band-edge structure and optical properties are studied employing a first-principle and fully relativistic full-potential linearized augmented plane wave (FPLAPW) method within the local density approximation (LDA). The optical band-edge absorption α(ω) of intrinsic SnO₂ is investigated experimentally by transmission spectroscopy measurements and their roughness in the light of the atomic force microscopy (AFM) measurements. The sample films were prepared by spray pyrolysis deposition method onto glass substrate considering different thickness layers. We found for SnO₂ qualitatively good agreement of the calculated optical band-gap energy as well as the optical absorption with the experimental results.     

Ab initio study of Fe-doped SnO: Local structure and hyperfine interactions at the Fe nucleus

In this work we perform an ab initio study of the electric field gradient (EFG) at the nucleus of Fe impurities in crystalline SnO. The Augmented Plane Waves plus Local Orbitals method is used to obtain the electronic structure of the doped system and the atomic relaxations introduced by the impurities in the SnO host in a fully self-consistent way. Most calculations are performed assuming that Fe ions replace the Sn atoms of the structure, in some cases including oxygen vacancies in order to discuss their role in the hyperfine interactions and in determining the local structure around Fe impurities. The case of interstitial Fe sites is also considered. Our predictions are compared with available Müssbauer spectroscopy results and also with theoretical and experimental results obtained for rutile SnO₂ and TiO₂.     

Mössbauer and vibrational DOS studies of diluted magnetic tin oxides and nano iron oxides

The magnetic properties and Mössbauer results for SnO₂ doped with ⁵⁷Fe are reviewed, and the values of isomer shift and quadrupole splitting are compared with the results obtained by ab initio calculations. It is concluded that the exchange interactions between oxygen defects and magnetic atoms are responsible for long range magnetic interactions of dilute Fe ions dispersed in SnO₂. Fe atom precipitated clusters may be formed in highly Fe doped SnO₂ samples by annealing at relatively high temperatures for several hours. The reduction of the particle size to nano-scale dimensions induces magnetization, which can be associated with oxygen defects. We have measured the nuclear inelastic scattering (NIS) spectra of Fe oxides, and ⁵⁷Fe and (Co or Mn) doped SnO₂ synthesized mainly by sol–gel methods and we have derived the vibration density of states (VDOS). The local phonons are sensitive to the presence of precipitated clusters.     

Effects of SnO2 addition on the microstructure and magnetic properties of NiZn ferrites

The microstructure and magnetic properties of SnO₂-doped NiZn ferrites prepared by a solid-state reaction method have been investigated. Due to its low melting point (∼1127 °C), moderate SnO₂ enhanced mass transfer and sintering by forming liquid phase, which accelerated the grain growth. However, excessive SnO₂ producing much of liquid phase retarded mass transfer and sintering, leading to a decrease in grain size. The diffraction intensity of the samples doped with SnO₂ addition was stronger than that of the sample without addition. The lattice constant initially decreased up to a content of 0.10 wt% and showed an increase at higher content up to 0.50 wt%. The initial permeability (μ_i) initially increased up to a content of 0.15 wt% and showed a decrease at higher content up to 0.50 wt%; however, losses (P_L) measured at 50 kHz and 150 mT changed contrarily. Both saturation induction (B_S) and Curie temperature (T_C) decreased gradually with increasing SnO₂. Finally, the sample doped with 0.10–0.15 wt% SnO₂ showed the higher permeability and lower losses.     

Effects of hydroxyls on the structural and room temperature ferromagnetic properties of Co doped SnO2 nanoparticles

Co doped SnO₂ nanoparticles have been prepared via a wet chemical method with different precipitation processes. The structure and morphology of Co doped SnO₂ nanoparticles demonstrate that the nanoparticles are in a rutile single phase and uniform, respectively. X-ray photoelectron spectroscopy shows that the Co dopants are in 2+ oxidation valence state and doped ∼2 atm% in SnO₂ nanoparticles. Moreover, Raman spectroscopy further confirms that Co doped SnO₂ nanoparticles have single phase crystallinity without forming any extra modes related to secondary phases. The magnetic measurements reveal that all nanoparticles exhibit room temperature ferromagnetism (RTFM) due to the presence of disorders and defects introduced by hydroxyls in the crystal structure. In addition, it has been clearly observed that the saturated magnetic moments are strongly affected by the precipitation processes which control the incorporation of hydroxyls into the lattice.