光探测与器件

为了实现软X射线波段光源相对光谱分布的测量,引进了一种利用新型软X射线波段传递标准探测器一Si光电二极管对软X射线探测器进行标定。标定了软X射线波段光谱测量实验中常用的探测器一通道电子倍增器在放大电压为1.3 kV时的量子效率,并对实验结果进行了分析,得出在8一3Onm波     

天文观察用超软X射线探测器的标定

在北京同步辐射装置3W1B光束线上,对天文观测用超软X射线(0.2keV—3.5keV)正比计数管探测器进行了系统地标定.得到了正比计数管的死时间、计数率坪曲线、能量线性、能量分辨、窗材料透过比曲线;借助于已标定过的光电二极管探测器,测量了正比管探测器的能量响应效率,标定不确定度在10%—18%之间.另外,还对正比管系统在卫星上的六道记录和在实验室里的多道记录进行了对比,两种记录方式符合得很好.     

X射线探测器的脉冲标定技术

利用强流电子束技术产生通量密度为10¹⁸—10¹⁹X-ray photon/sr·s的脉冲CuKX射线源,标定PIN型硅二极管半导体探测器对X光子的脉冲灵敏度。用绝对X射线监测器——P10气体脉冲电离室作为脉冲X射线通量密度的标准。脉冲电荷自动测量仪由微处理机进行程序控制,并予以实时校准。该电离室测量通量密度的精度为±5％,适用的能通量率范围可达4×10^-9—2×10²W/cm²,适用的光子能量范围为1.5—10keV,标定探测器的精度为±7.0％,并发现PIN型硅二极管的脉冲灵敏度比稳态X射线束标定的灵敏度高30％左右。 关键词：     

标定脉冲星导航探测器的荧光X射线光源

为标定X射线脉冲星导航用探测器, 设计了一种荧光X射线源, 该射线源的工作原理是 用X射线管的出射线轰击特定荧光靶材, 从而获得能量一定的荧光X射线, 并以此作为标定探测器的荧光X射线光源. 采用硅漂移半导体探测器在大气环境下测试了按上述原理搭建的荧光X射线光源的能谱分布和光子流量, 从光子流量入手推算了该荧光X射线光源用于真空系统中对探测器进行标定的可行性. 研制出了荧光X射线光源样机, 并在真空系统中对荧光X射线光源样机光子流量做了测试. 在探测距离D_x=300 cm, X射线管管流I_a=200 μA时, 所测得的荧光X射线光源光子流量可达19.57 ph/s@4.51 keV, 25.22 ph/s@5.41 keV, 33.27 ph/s@8.05 keV, 确认了所提方法的可行性, 获得了标定探测器的荧光X射线光源.     

基于APD单光子探测器的光子到达时间标记精度研究EI北大核心CSCD

为了准确测量X射线脉冲星导航中的光子到达时间,提出了一种X射线探测器光子到达时间精度的测试系统,该系统主要由脉冲X射线发生器、任意波形发生器、雪崩光电二极管探测器和时间标记光子计数器组成。系统测量脉冲X射线发生器的控制脉冲信号与雪崩光电二极管探测器测量的输出信号之间的时间延迟,研究时间延迟的分布情况,该分布的标准差可以反映被测探测器的光子到达时间测量精度。实验结果显示,雪崩光电二极管探测器输出信号相比控制信号的时间延迟约9.03 ns,标准差为2.23 ns,即雪崩光电二极管探测器的光子到达时间精度为2.23 ns,表明其能够实现对X射线单光子的快时间响应与高精度标记。     

同步辐射在ICF研究中的应用

介绍同步辐射在ICF研究中的应用,对多种ICF实验诊断用软X光探测元器件及设备利用北京同步辐射装置(BSRF)-3W1B作能量响应绝对标定.首先采取透射光栅分光和软X光面陈CCD观测记录,对光源进行性能研究.在50—1500eV能区分7个能段,通过不同材料的前置滤片抑制高次谐波,获得单色性好于95%的单色光.采用美国IRD公司生产的AXUV-100硅光二极管作次级标准探测器.利用BSRL的反射率计靶室及其相关联动调束系统,获得连续可调的单色光标定束.在该束线上进行了多轮实验.获得大量探测器标定数据用于ICF实验研究,提高了实验精度.     

天文观察用超软X射线探测器的标定

在北京同步辐射装置3WlB光束线上,对天文观测用超软X射线(0.2keV-3．5keV)正比计数管探测器进行了系统地标定．得到了正比计数管的死时间、计数率坪曲线、能量线性、能量分辨、窗材料透过比曲线;借助于已标定过的光电二极管探测器,测量了正比管探到器的能量响应效率,标定不确定度在10％一18％之间．另外,还对正比管系统在卫星上的六道记录和在实验室里的多道记录进行了对比,两种记录方式符合得很好．     

CsI光阴极在10-100 keV X射线能区的响应灵敏度计算

为了满足10-100 keV高能X射线光电探测器研究的需要,对CsI光阴极在该能量范围的响应灵敏度进行了研究.基于高能量X射线光子与材料相互作用的物理过程,分析了康普顿散射等效应对CsI响应灵敏度的影响.推导了CsI的响应灵敏度与二次电子平均逃逸深度和光阴极厚度的关系式和二次电子平均逃逸深度与入射光子能量的关系式,计算了CsI在10-100 keV范围内的响应灵敏度,计算结果与实验测试数据相符,验证了分析与推导的可靠性.根据计算可以获得不同入射X射线能量下CsI光阴极的最佳厚度,从而为高能X射线光电探测器的设计优化提供了理论参考.     

同步辐射软X射线源用于软X射线探测元件定标

用于惯性约束聚变诊断的软Ｘ射线探测元器件的能量响应曲线定标，利用北京同步辐射装置（BSRF-3B1束线，束流为20—80mA，光子能量为250—1000eV,通量约为10¹²photon/s·mm²·mr²·0.1%band width）及反射率计靶室，采用AXUV-100硅光二极管作源强绝对监测．对X射线二极管（XRD）及金刚石光电导探测器等五种探测元件进行能量响应曲线定标，获得初步实验结果，并对数据进行了分析 关键词：     

软X光平面镜反射率标定实验

报道了掠入射软X光平面镜反射率标定实验。实验利用北京同步辐射装置 (BSRF) 3W 1B束线及反射率计靶室 ,在束流 35mA～ 110mA、贮存环电子能量 2GeV专用光运行模式下 ,在 5 0eV～ 85 0eV能区分四个能段 ,进行了 5°掠入射Ni平面镜反射率标定实验。标定过程中用高灵敏度无死层的硅光二极管代替X射线二极管作探测器 ,输出信号提高 2～ 3个量级 ,可标定能区从 15 0eV～ 2 70eV拓展到 5 0eV～ 85 0eV ,给出了完整的 5°Ni平面镜反射率标定曲线。最后把实验数据与理论计算作了比对并进行了分析。     

金阴极微通道板探测器X射线段的能谱响应

 利用表面镀金阴极膜的微通道板(MCP)构成一种金阴极MCP光电探测器,根据MCP的电阻电容特性提出了一种特殊的能谱响应测量方法。在北京同步辐射3B3中能束线上对该探测器在2.1～6.0 keV能段的谱响应进行了实验标定。以美国NIST绝对定标的美国IRD公司生产的AXUV-100硅光二极管为次级标准探测器,标定金膜厚度分别为25和100 nm的金阴极MCP探测器的能谱响应。经分析发现,阴极材料和MCP材料的元素吸收边是造成量子效率曲线出现突变点的原因。对比两种MCP的能谱响应标定结果,金膜厚度为100 nm探测器的能谱响应高于金膜厚度为25 nm的探测器。     

Low-loss photon-to-electron conversion

Silicon photodiodes with induced junction structure can reach low-loss photon-to-electron conversion. The calculated conversion efficiency in the visible wavelength range typically deviates less than 10 ppm from unity and its uncertainty is about 100 ppm at room temperature or as low as 1 ppm at 78 K. Here we show experimentally that our dedicated induced junction photodiodes indeed have very low conversion losses when they are assembled in a light trapping structure as provided by, for example, the predictable quantum efficient detector (PQED). It is concluded that the remaining measured losses, if any, are probably due to surface recombination of electrons and holes close to the silicon/silicon dioxide interface of the photodiode.     

Preliminary characterization of semiconductor detectors in the soft X-ray range using synchrotron radiation from the VEPP-4 storage ring

A photodiode developed at the Ioffe Physico-Tech nical Institute (St. Petersburg) and referred to in the literature as the SPD has been preliminarily calibrated by the primary-detector-based method. The possibility of application of SPD photodiodes as radiometric detectors has been investigated. The AXUV-100 photodiode (IRD Inc., United States) was used as a primary detector. The radiation strength of both detectors has been tested. It was revealed that, being more radiation-resistant, the SPD had radiometry characteristics that were not worse than those of the AXUIV-100.     

Absolute efficiency calibration of high-purity germanium detector in the range 120–8500 keV

This article reports the efficiency response curve of the high-purity germanium detector over the wide energy range, covering from 120 to 8500 keV. The efficiencies were measured for different counting geometries by using point radionuclide standards (mono-energetic as well as multi-gamma emitters) supplied by IAEA and the capture gamma-ray facility installed at PINSTECH nuclear reactor PARR-1. The measured efficiencies were required to fit with a suitable fitting function for interpolation within the energy range of interest. Several fitting functions were proposed in the literature covering different energy ranges. The functions giving the best fit to experimental data are presented. The work has successfully extended the response curve beyond 1500–8500 keV, which is the region where the standard calibration radionuclides are not available. The thermal neutron capture gamma-ray facility provided the collimated neutron beam, extracted from the core of the reactor and made to react with ammonium chloride target to produce the capture gamma rays for determining the efficiencies in the extended region. It was found that the capture gamma-ray provides a satisfactory solution to extend the absolute efficiency calibration in the MeV range. It was also found that the fitting function that is linear in its parameter was highly satisfactory up to 1500 keV but proved insufficient upto 8500 keV. The exponential function giving the good fit over the range has been presented. Good agreement has been found between the experimentally measured absolute efficiencies and the predicted result.     

XRD灵敏度在同步辐射源上的绝对刻度

 在BEPC同步辐射的3B1束线上，利用多层镜分光，获得了单色性较好，强度较高的软X光光源。采用美国进口的AXUV-100Si光二极管作为二级标准，对XRD探测器和滤片进行绝对刻度，获得了各种阴极XRD的灵敏度，其结果与LLNL的实验结果吻合，并对实验结果作了分析。     

Investigation of GEM-Micromegas detector on X-ray beam of synchrotron radiation

To reduce the discharge of the standard bulk Micromegas and GEM detectors, a GEM-Micromegas detector was developed at the Institute of High Energy Physics. Taking into account the advantages of the two detectors, one GEM foil was set as a preamplifier on the mesh of Micromegas in the structure and the GEM preamplification decreased the working voltage of Micromegas to significantly reduce the effect of the discharge. At the same gain, the spark probability of the GEM-Micromegas detector can be reduced to a factor 0.01 compared to the standard Micromegas detector, and an even higher gain could be obtained. This paper describes the performance of the X-ray beam detector that was studied at 1W2B Laboratory of Beijing Synchrotron Radiation Facility. Finally, the result of the energy resolution under various X-ray energies was given in different working gases. This indicates that the GEM-Micromegas detector has an energy response capability in an energy range from 6 keV to 20 keV and it could work better than the standard bulk-Micromegas.     

Measurement of the temporal and spectral characteristics of silicon p-i-n photodiodes in the soft x-ray range

A procedure is briefly described for investigating the temporal and spectral characteristics of a soft x-ray detector in the range of photon energies from a few tenths of an electron-volt to more than a thousand electron-volts. The measured characteristics (signal rise time, time resolution, and absolute responsivity) are given, along with parameters (thicknesses of the contact layer, dead layer, and sensitive layer) determined from the measurement results for certain commercial brands of fast silicon p-i-n photodiodes from various manufacturers (Siemens, Hamamatsu, Motorola, and NIIIT/Moscow), which can be used in x-ray plasma diagnostic apparatus with a time resolution of 1 ns or better. Zh. Tekh. Fiz. 69, 83–88 (May 1999)