Recent progress in design of conductive polymers to improve the thermoelectric performance

Organic semiconductors,especially polymer semiconductors,have attracted extensive attention as organic thermoelectric materials due to their capabilities for flexibility,low-cost fabrication,solution processability and low thermal conductivity.However,it is challenging to obtain high-performance organic thermoelectric materials because of the low intrinsic carrier concentration of organic semiconductors.The main method to control the carrier concentration of polymers is the chemical doping process by charge transfer between polymer and dopant.Therefore,the deep understanding of doping mechanisms from the point view of chemical structure has been highly desired to overcome the bottlenecks in polymeric thermoelectrics.In this contribution,we will briefly review the recently emerging progress for discovering the structure–property relationship of organic thermoelectric materials with high performance.Highlights include some achievements about doping strategies to effectively modulate the carrier concentration,the design rules of building blocks and side chains to enhance charge transport and improve the doping efficiency.Finally,we will give our viewpoints on the challenges and opportunities in the field of polymer thermoelectric materials.     

Review of electronic transport models for thermoelectric materials

Thermoelectric devices have gained importance in recent years as viable solutions for applications such as spot cooling of electronic components, remote power generation in space stations and satellites etc. These solid-state devices have long been known for their reliability rather than their efficiency; they contain no moving parts, and their performance relies primarily on material selection, which has not generated many excellent candidates. Research in recent years has been focused on developing both thermoelectric structures and materials that have high efficiency. In general, thermoelectric research is two-pronged with (1) experiments focused on finding new materials and structures with enhanced thermoelectric performance and (2) analytical models that predict thermoelectric behavior to enable better design and optimization of materials and structures. While numerous reviews have discussed the importance of and dependence on materials for thermoelectric performance, an overview of how to predict the performance of various materials and structures based on fundamental quantities is lacking. In this paper we present a review of the theoretical models that were developed since thermoelectricity was first observed in 1821 by Seebeck and how these models have guided experimental material search for improved thermoelectric devices. A new quantum model is also presented, which provides opportunities for the optimization of nanoscale materials to enhance thermoelectric performance.     

N-type core-shell heterostructured Bi2S3@Bi nanorods/polyaniline hybrids for stretchable thermoelectric generator

With the growing need on distributed power supply for portable electronics,energy harvesting from environment becomes a promising solution.Organic thermoelectric(TE)materials have advantages in intrinsic flexibility and low thermal conductivity,thus hold great prospect in applications as a flexible power generator from dissipated heat.Nevertheless,the weak electrical transport behaviors of organic TE materials have severely impeded their development.Moreover,compared with p-type organic TE materials,stable and high-performance n-type counterparts are more difficult to obtain.Here,we developed a n-type polyaniline-based hybrid with core-shell heterostructured Bi;S;@Bi nanorods as fillers,showing a Seebeck coefficient-159.4μV/K at room temperature.Further,a couple of n/p legs from the PANI-based hybrids were integrated into an elastomer substrate forming a stretchable thermoelectric generator(TEG),whose function to output stable voltages responding to temperature differences has been demonstrated.The in situ output performance of the TEG under stretching could withstand up to 75%elongation,and stability test showed little degradation over a one-month period in the air.This study provides a promising strategy to develop stable and high thermopower organic TEGs harvesting heat from environment as long-term power supply.     

Facile synthesis of nanostructured n-type SiGe alloys with enhanced thermoelectric performance using rapid solidification employing melt spinning followed by spark plasma sintering

SiGe alloy is widely used thermoelectric materials for high temperature thermoelectric generator applications. However, its high thermoelectric performance has been thus far realized only in alloys synthesized employing mechanical alloying techniques, which are time-consuming and employ several materials processing steps. In the current study, for the first time, we report an enhanced thermoelectric figure-of-merit (ZT) ∼ 1.1 at 900 °C in n-type Si₈₀Ge₂₀ nano-alloys, synthesized using a facile and up-scalable methodology consisting of rapid solidification at high optimized cooling rate ∼ 3.4 × 10⁷ K/s, employing melt spinning followed by spark plasma sintering of the resulting nano-crystalline melt-spun ribbons. This enhancement in ZT > 20% over its bulk counterpart, owes its origin to the nano-crystalline microstructure formed at high cooling rates, which results in crystallite size ∼7 nm leading to high density of grain boundaries, which scatter heat-carrying phonons. This abundant scattering resulted in a very low thermal conductivity ∼2.1 Wm⁻¹K⁻¹, which corresponds to ∼50% reduction over its bulk counterpart and is amongst the lowest reported thus far in n-type SiGe alloys. The synthesized samples were characterized using X-ray diffraction, scanning electron microscopy and transmission electron microscopy, based on which the enhancement in their thermoelectric performance has been discussed.     

Thermoelectric properties of nano-bulk bismuth telluride prepared with spark plasma sintered nano-plates

The pursuit for a high-performance thermoelectric n-type bismuth telluride-based material is significant because n-type materials are inferior to their corresponding p-type materials in highly efficient thermoelectric modules. Herein, to improve the thermoelectric performance of an n-type Bi₂Te₃, we prepared Bi₂Te₃ nano-plates with a homogeneous sub-micron size distribution and thickness range of about a few tens of nanometers. This was achieved using a typical nano-chemical synthetic method, and the prepared materials were then spark plasma sintered to fabricate n-type nano-bulk Bi₂Te₃ samples. We observed a significant enhancement of the anisotropic electrical transport properties for the nano-bulk sample with a higher power factor along the in-plane direction (24.3?μW?cm^?1?K^?2 at 300?K) than that along the out-of-plane direction (8.1?μW?cm^?1?K^?2 at 300?K). However, thermal transport properties were insensitive along the measured direction for the nano-bulk sample. We used a dimensionless figure of merit ZT to calculate the thermoelectric performance. The results showed that the maximum ZT value of 0.69 was achieved along the in-plane direction at 440?K for the nano-bulk n-type Bi₂Te₃ sample, which was however smaller than that of the previously reported n-type samples (ZT of 1.1). We believe that a further enhancement of the ZT value in the fabricated nano-bulk sample could be accomplished by effectively removing the surface organic ligand of the Bi₂Te₃ nano-plate particles and optimizing the spark plasma sintering conditions, maintaining the nano-plate morphology intact.     

Strategies for optimizing the thermoelectricity of PbTe alloys

The thermoelectric materials have been considered as a potential candidate for the new power generation technology based on their reversible heat and electricity conversion.Lead telluride(Pb Te) is regarded as an excellent mid-temperature thermoelectric material due to its suitable intrinsic thermoelectric properties.So tremendous efforts have been done to improve the thermoelectric performance of Pb Te,and figures of merit,z_T 2.0,have been reported.Main strategies for optimizing the thermoelectric performance have been focused as the main line of this review.The band engineering and phonon scattering engineering as two main effective strategies are systemically summarized here.The band engineering,like band convergence,resonant levels,and band flatting have been addressed in improving the power factor.Additionally,phonon scattering engineerings,such as atomic-scale,nano-scale,meso-scale,and multi-scale phonon scatterings have been applied to reduce the thermal conductivity.Besides,some successful synergistic effects based on band engineerings and phonon scatterings are illustrated as a simultaneous way to optimize both the power factor and thermal conductivity.Summarizing the above three main parts,we point out that the synergistic effects should be effectively exploited,and these may further boost the thermoelectric performance of Pb Te alloys and can be extended to other thermoelectric materials.     

Electronic and thermoelectric properties of Mg_2Ge_xSn-_(1-x)(x=0.25,0.50,0.75) solid solutions by first-principles calculations

The electronic structure and thermoelectric(TE) properties of Mg_2Ge_xSn_(1-x)(x = 0.25, 0.50, 0.75) solid solutions are investigated by first-principles calculations and semi-classical Boltzmann theory. The special quasi-random structure(SQS) is used to model the solid solutions, which can produce reasonable band gaps with respect to experimental results.The n-type solid solutions have an excellent thermoelectric performance with maximum zT values exceeding 2.0, where the combination of low lattice thermal conductivity and high power factor(PF) plays an important role. These values are higher than those of pure Mg_2Sn and Mg_2Ge. The p-type solid solutions are inferior to the n-type ones, mainly due to the much lower PF. The maximum zT value of 0.62 is predicted for p-type Mg_2Ge_(0.25)Sn_(0.75) at 800K. The results suggest that the n-type Mg_2Ge_xSn_(1-x) solid solutions are promising mid-temperature TE materials.     

Thermoelectric generator based on a bismuth-telluride alloy fabricated by addition of ethylene glycol

This paper introduces a new method to selectively fabricate n-type and p-type bismuth (Bi)-telluride (Te) thermoelectric materials by the rate of addition of ethylene glycol (EG) in the Bi–Te co-electrodeposition solution. As the amount of added EG is increased, the atomic ratio of Bi in the deposited Bi–Te alloy reached a slope of 0.463 (at.% of Bi/vol.% of EG), and increased in a linear manner. When the EG content reached approximately 20%v/v, the n-type material changed into a p-type. This change implies that adjusting the EG content in the electrodeposition solution affords simple control of the Bi–Te composition. To demonstrate the applicability of the developed thermoelectric materials, thermoelectric generators (TEGs) were fabricated using electrodeposited n-type (using solution without EG) and p-type (using solution with 30%v/v EG) Bi–Te alloys. The Seebeck voltage of the pair of n-type and p-type thermoelectric materials was 140 mV and the power generated from the pair was 24.36 nW at a 10 °C temperature difference.     

Fundamental and progress of Bi_2Te_3-based thermoelectric materials

Thermoelectric materials,enabling the directing conversion between heat and electricity,are one of the promising candidates for overcoming environmental pollution and the upcoming energy shortage caused by the over-consumption of fossil fuels.Bi_2Te_3-based alloys are the classical thermoelectric materials working near room temperature.Due to the intensive theoretical investigations and experimental demonstrations,significant progress has been achieved to enhance the thermoelectric performance of Bi_2Te_3-based thermoelectric materials.In this review,we first explored the fundamentals of thermoelectric effect and derived the equations for thermoelectric properties.On this basis,we studied the effect of material parameters on thermoelectric properties.Then,we analyzed the features of Bi_2Te_3-based thermoelectric materials,including the lattice defects,anisotropic behavior and the strong bipolar conduction at relatively high temperature.Then we accordingly summarized the strategies for enhancing the thermoelectric performance,including point defect engineering,texture alignment,and band gap enlargement.Moreover,we highlighted the progress in decreasing thermal conductivity using nanostructures fabricated by solution grown method,ball milling,and melt spinning.Lastly,we employed modeling analysis to uncover the principles of anisotropy behavior and the achieved enhancement in Bi_2Te_3,which will enlighten the enhancement of thermoelectric performance in broader materials     

Recent advances in non-Pb-based group-Ⅳ chalcogenides for environmentally-friendly thermoelectric materials

Pb-based group-IV chalcogenides including Pb Te and Pb Se have been extensively studied as high performance thermoelectric materials during the past few decades.However,the toxicity of Pb inhibits their applications in vast fields due to the serious harm to the environment.Recently the Pb-free group-IV chalcogenides have become an extensive research subject as promising thermoelectric materials because of their unique thermal and electronic transport properties as well as the enviromentally friendly advantage.This paper briefly summarizes the recent research advances in Sn-,Ge-,and Sichalcogenides thermoelectrics,showing the unexceptionally high thermoelectric performance in Sn Se single crystal,and the significant improvement in thermoelectric performance for those polycrystalline materials by successfully modulating the electronic and thermal transport through using some well-developed strategies including band engineering,nanostructuring and defect engineering.In addition,some important issues for future device applications,including N-type doping and mechanical and chemical stabilities of the new thermoelectrics,are also discussed.     

Recent advances on thermoelectric materials

By converting waste heat into electricity through the thermoelectric power of solids without producing greenhouse gas emissions, thermoelectric generators could be an important part of the solution to today’s energy challenge. There has been a resurgence in the search for new materials for advanced thermoelectric energy conversion applications. In this paper, we will review recent efforts on improving thermoelectric efficiency. Particularly, several novel proof-of-principle approaches such as phonon disorder in phonon-glass-electron crystals, low dimensionality in nanostructured materials and charge-spin-orbital degeneracy in strongly correlated systems on thermoelectric performance will be discussed.      

Emerging Theory,Materials, and Screening Methods: New Opportunities for Promoting Thermoelectric Performance

High‐performance thermoelectric materials have attracted immense interest due to the capability of directly converting thermal energy into electrical energy. The correlation and inherent complexity between the thermoelectric parameters pose serious challenges to improving the materials’ thermoelectric performance. Herein, the emerging novel theories in the field of thermoelectrics are summarized, such as the coherent phonon, nanophononic metamaterial, rattling effect, topological phonon, and topological electron. The impacts of these new concepts on thermoelectric performance are then reviewed. Finally, a number of promising thermoelectric materials such as one‐dimensional nanowires, two‐dimensional layered materials, and nanomesh structures are discussed. The advanced understanding of thermal and electrical transport properties in thermoelectric materials is presented herein, providing new opportunities for improving thermoelectric performance.     

Investigation of the thermoelectric properties of one-layer transition metal dichalcogenides

Transition metal dichalcogenides (TMDCs) have attracted various research interests as one of the priorities of materials research due to their promising properties, especially in the field of thermoelectricity. The efficiency or performance of thermoelectric devices is expressed in terms of the thermoelectric figure-of-merit (ZT) – a standard indicator of a material's thermoelectric properties for use in cooling systems. The evaluation of ZT is principally determined by the thermoelectric characteristics of the nanomaterials. In this paper, a set of investigative computations was performed to study the thermoelectric properties of monolayer TMDCs according to the semiclassical treatment of the Boltzmann transport equation. It was confirmed that the thermoelectric properties of 2D materials can be greatly improved compared with their bulk properties. Calculations show an improvement in the power factor for the TMDCs under consideration, and, thus, the ZT compared to the bulk state due to an improvement in the Seebeck modulus and electrical conductivity, without significantly affecting the thermal conductivity and negatively affecting the ZT. These materials show clear characteristic variations at room temperature, with the highest ZT values of 2.919 and 2.873 obtained for WSe2 and WS2, respectively.     

Excellent thermoelectric performance predicted in Sb2Te with natural superlattice structure

Using first-principles calculations combined with the Boltzmann transport theory, we explore the thermoelectric properties of natural superlattice (SL) structure Sb₂Te. The results show that n-type Sb₂Te possesses larger Seebeck coefficient of 249.59 (318.87) μV/K than p-type Sb₂Te of 219.85 (210.38) μV/K and low lattice thermal conductivity of 1.25 (0.21) W/mK along the in-plane (out-of-plane) direction at 300 K. The excellent electron transport performance is mainly attributed to steeper density of state around the bottom of conduction band. The ultralow lattice thermal conductivity of Sb₂Te is mainly caused by low phonon group velocity and strong anharmonicity. Further analysis shows that the decrease of group velocity comes from flatter dispersion curves which are contributed by the Brillouin-zone folding. The strong anharmonicity is mainly due to the presence of lone-pair electrons in Sb₂Te. Combining such a high Seebeck coefficient with the low lattice thermal conductivity, maximum n-type thermoelectric figure of merit (ZT) of 1.46 and 1.38 could be achieved along the in-plane and out-of-plane directions at room temperature, which is higher than the reported values of Sb₂Te₃. The findings presented here provide insight into the transport property of Sb₂Te and highlight potential applications of thermoelectric materials at room temperature.     

Advances in thermoelectrics

Thermoelectric generators, capable of directly converting heat into electricity, hold great promise for tackling the ever-increasing energy sustainability issue. The thermoelectric energy conversion efficiency is heavily dependent upon the materials’ performance that is quantified by the dimensionless figure-of-merit (ZT). Therefore, the central issue in the research of thermoelectric materials lies in continuously boosting the ZT value. Although thermoelectric effects were discovered in the nineteenth century, it was only until the 1950s when classic materials like Bi₂Te₃ and PbTe were developed and basic science of thermoelectrics was established. However, the research of thermoelectrics did not take a smooth path but a rather tortuous one with ups and downs. After hiatus in the 1970s and 1980s, relentless efforts starting from the 1990s were devoted to understanding the transport and coupling of electrons and phonons, identifying strategies for improving the thermoelectric performance of existing materials, and discovering new promising compounds. Rewardingly, substantial improvements in materials’ performance have been achieved that broke the ZT limit of unity. Meanwhile, advancements in fundamental understanding related to thermoelectrics have also been made. In this Review, recent advances in the research of thermoelectric materials are overviewed. Herein, strategies for improving and decoupling the individual thermoelectric parameters are first reviewed, together with a discussion on open questions and distinctly different opinions. Recent advancements on a number of good thermoelectric materials are highlighted and several newly discovered promising compounds are discussed. Existing challenges in the research of thermoelectric materials are outlined and an outlook for the future thermoelectrics research is presented. The paper concludes with a discussion of topics in other fields but related to thermoelectricity.     

Two-dimensional square-Au_2S monolayer: A promising thermoelectric material with ultralow lattice thermal conductivity and high power factor

The search for new two-dimensional(2 D) harvesting materials that directly convert(waste) heat into electricity has received increasing attention. In this work, thermoelectric(TE) properties of monolayer square-Au_2S are accurately predicted using a parameter-free ab initio Boltzmann transport formalism with fully considering the spin–orbit coupling(SOC),electron–phonon interactions(EPIs), and phonon–phonon scattering. It is found that the square-Au_2S monolayer is a promising room-temperature TE material with an n-type(p-type) figure of merit ZT = 2.2(1.5) and an unexpected high n-type ZT = 3.8 can be obtained at 600 K. The excellent TE performance of monolayer square-Au_2S can be attributed to the ultralow lattice thermal conductivity originating from the strong anharmonic phonon scattering and high power factor due to the highly dispersive band edges around the Fermi level. Additionally, our analyses demonstrate that the explicit treatments of EPIs and SOC are highly important in predicting the TE properties of monolayer square-Au_2S. The present findings will stimulate further the experimental fabrication of monolayer square-Au_2S-based TE materials and offer an in-depth insight into the effect of SOC and EPIs on TE transport properties.     

基于可拉伸有机晶体管的高性能生理信号传感器

近来,以共轭聚合物为沟道材料的有机电化学晶体管(OECT)因其易于制备、具有离子–电子转换能力和生物界面相容性而成为研究热点。然而,已报道的用于OECT沟道材料的大多是p型共轭聚合物,而基于n型共轭聚合物开发的OECT则很少,而不平衡的发展阻碍了复杂互补电路的实现。最近被报道的新兴n型共轭聚合物半导体Poly (benzimidazobenzophenanthroline)(BBL) OECT为解决上述问题提供了一个有效的方案。但BBL薄膜本身具有脆性无法拉伸,无法满足柔性器件的使用需求,大大阻碍了其应用及发展。本工作中,我们提出了一种器件可拉伸的n型BBL OECT器件的制备方法,并验证了其在汗液传感方面的可行性。     

低维纳米材料热电性能测试方法研究

通过近几十年的研究,人们对于块体及薄膜材料的热电性能已经有了较全面的认识,热电优值ZT的提高取得了飞速的进展,比如碲化铋相关材料、硒化亚铜相关材料、硒化锡相关材料的最大ZT值都突破了2.但是,这些体材料的热电优值距离大规模实用仍然有较大的差距.通过理论计算得知,当块体热电材料被制作成低维纳米结构材料时,比如二维纳米薄膜、一维纳米线,热电性能会得到显著的改善,具有微纳米结构材料的热电性能研究引起了科研人员的极大兴趣.当块体硅被制作成硅纳米线时,热电优值改善了将近100倍.然而,微纳米材料的热电参数测量极具挑战,因为块体材料的热电参数测量方法和测试平台已经不再适用于低维材料,需要开发出新的测量方法和测试平台用来研究低维材料的热导率、电导率和塞贝克系数.本文综述了几种用于精确测量微纳米材料热电参数的微机电结构,包括双悬空岛、单悬空岛、悬空四探针结构,详细介绍了每一种微机电结构的制备方法、测量原理以及对微纳米材料热电性能测试表征的实例.     

Changes in the electronic properties of Bi2X3 (X: Se, Te) single crystals due to intercalation

Bi₂Se₃ and Bi₂Te₃ are layered semiconductors n-type and p-type, respectively, which belong to the family of thermoelectric materials. In this work we examine the insertion of Cu in Bi₂Te₃ and Bi₂Se₃ single crystals through an intercalation reaction. The inserted Cu acting as donor enhances the n-type character of Bi₂Se₃ while changing the native p-type character of Bi₂Te₃ to n-type. The spatial distribution of the intercalated species was monitoring by X-ray microanalysis and microscopic IR reflectivity measurements. Paper presented at the 4th Euroconference on Solid State Ionics, Renvyle, Galway, Ireland, Sept. 13–19, 1997     

Characterization of heat flow in silicon nanowire arrays for efficient thermoelectric power harvesting

We report the performance of Silicon Nanowire Arrays (SiNWA) with two different lengths (30 μm and 50 μm) for both p- and n-type Si(100) as a material applied for thermoelectric power harvesting, followed by comparing the recorded performance to that bulk Si. Heat flow from top to the bottom Cu sheet had noticeably decreased in SiNWA samples, resulting in a higher temperature difference, ΔT and Seebeck voltage, Voc than in bulk Si. The results suggested that both p- and n-type SiNWA samples (50 μm) have achieved 100 and 80% increase in ΔT, respectively, relative to the bulk Si.