The gallium-site donors germanium and silicon in gallium phosphide

The node in the Bloch part of the electron wave function expected for a Ga-site donor in GaP removes the usual valley-orbit splitting and associated chemical shift. However, the T₂ ground state can still show a small spin-valley splitting into Γ₈ and Γ₇ states, as previously verified for the Sn donor. We find that the optical properties of the Ge and Si donors deviate appreciably from this “normal” behaviour. The Ge donor is anomalously deep, E_D ～ 202 meV, yet binds an exciton by ～63 meV consistent with the Haynes rule for neutral donors in GaP. We find that this exciton possesses the large oscillator strength, f～3.5 × 10^-3, Zeeman and piezo-optical splittings characteristic of a Γ₆, 1s(A₁) ground state, like a P rather than Ga-site donor. However, f and the exciton localization energy are consistent with expectation for E_D ～ 200 meV, as measured from the lowest set of X conduction band minima, if we assume a symmetric A₁-like wave function. A possible explanation for this unexpected result is advanced. The much shallower Si donor, E_D～82 meV, binds an exciton by only ～ 14 meV, also consistent with the Haynes rule. By contrast, we find this Ga-site donor to be normal except that our Zeeman and piezo-optical results indicate an inverted spin-valley splitting, about 25% of that for the still shallower Sn donor. We also discuss the numerous low-lying excited states, some anomalous phonon replicas in the Ge and Si donor bound exciton spectra and the magneto-optical properties of a sharp line near 2.24 eV, attributed to the decay of excitons bound to (S)_p-(Ge)_p donor-acceptor associates.     

Tailoring MoS2 Ultrathin Sheets Anchored on Graphene Flexible Supports for Superstable Lithium‐Ion Battery Anodes

2D MoS₂ has a significant capacity decay due to the stack of layers during the charge/discharge process, which has seriously restricted its practical application in lithium‐ion batteries. Herein, a simple preform‐in situ process to fabricate vertically grown MoS₂ nanosheets with 8–12 layers anchored on reduced graphene oxide (rGO) flexible supports is presented. As an anode in MoS₂/rGO//Li half‐cell, the MoS₂/rGO electrode shows a high initial coulomb efficiency (84.1%) and excellent capacity retention (84.7% after 100 cycles) at a current density of 100 mA g^?1. Moreover, the MoS₂/rGO electrode keeps capacity as high as 786 mAh g^?1 after 1000 cycles with minimum degradation of 54 µAh g^?1 cycle^?1 after being further tested at a high current density of 1000 mA g^?1. When evaluated in a MoS₂/rGO//LiCoO₂ full‐cell, it delivers an initial charge capacity of 153 mAh g^?1 at a current density of 100 mA g^?1 and achieves an energy density of 208 Wh kg^?1 under the power density of 220 W kg^?1.     

Band renormalization and spin polarization of MoS2 in graphene/MoS2 heterostructures

Transition metal dichalcogenides exhibit spin–orbit split bands at the K‐point that become spin polarized for broken crystal inversion symmetry. This enables simultaneous manipulation of valley and spin degrees of freedom. While the inversion symmetry is broken for monolayers, we show here that spin polarization of the MoS₂ surface may also be obtained by interfacing it with graphene, which induces a space charge region in the surface of MoS₂. Polarization induced symmetry breaking in the potential gradient of the space charge is considered to be responsible for the observed spin polarization. In addition to spin polarization we also observe a renormalization of the valence band maximum (VBM) upon interfacing of MoS₂ with graphene. The energy difference between the VBM at the Γ‐point and K‐point shifts by ～150 meV between the clean and graphene covered surface. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Layered MoS2 grown on c ‐sapphire by pulsed laser deposition

Layered growth of molybdenum disulphide (MoS₂) was successfully achieved by pulsed laser deposition (PLD) method on c ‐plane sapphire substrate. Growth of monolayer to a few monolayer MoS₂, dependent on the pulsed number of excimer laser in PLD is demonstrated, indicating the promising controllability of layer growth. Among the samples with various pulse number deposition, the frequency difference (A_1g–E¹_2g) in Raman analysis of the 70 pulse sample is estimated as 20.11 cm^–1, suggesting a monolayer MoS₂ was obtained. Two‐dimensional (2D) layer growth of MoS₂ is confirmed by the streaky reflection high energy electron diffraction (RHEED) patterns during growth and the cross‐sectional view of transmission electron microscopy (TEM). The in‐plane relationship, (0006) sapphire//(0002)MoS₂and sapphire//MoS₂ is determined. The results imply that PLD is suitable for layered MoS₂ growth. Additionally, the oxide states of Mo 3d core level spectra of PLD grown MoS₂, analysed by X‐ray photoelectron spectroscopy (XPS), can be effectively reduced by adopting a post sulfurization process. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Three‐Dimensional Multilayer Assemblies of MoS2/Reduced Graphene Oxide for High‐Performance Lithium Ion Batteries

Three‐dimensional (3D) multilayer molybdenum disulfide (MoS₂)/reduced graphene oxide (RGO) nanocomposites are prepared by a solution‐processed self‐assembly based on the interaction using different sizes of MoS₂ and GO nanosheets followed by in situ chemical reduction. 3D multilayer assemblies with MoS₂ wrapped by large RGO nanosheets and good interface are observed by transmission electron microscopy. The interaction of Na⁺ ions with oxygen‐containing groups of GO is also investigated. The measurement of lithium ion batteries (LIBs) shows that MoS₂/RGO anode nanocomposite with a weight ratio of MoS₂ to GO of 3:1 exhibits an excellent rate performance of 750 mAh g^?1 at 3 A g^?1 outperforming many previous studies and a high reversible capacity up to ≈1180 mAh g^?1 after 80 cycles at 100 mA g^?1. Good rate performance and high capacity of MoS₂/RGO with 3D unique layered‐structures are attributed to the combined effects of continuous conductive networks of RGO, good interface facilitating charge transfer, and strong RGO sheets preventing the volume expansion. Results indicate that 3D multilayer MoS₂/RGO prepared by a facile solution‐processed assembly can be developed to be an excellent nanoarchitecture for high‐performance LIBs.     

Fracture‐induced nanoscrolls from CVD‐grown monolayer molybdenum disulfide

We report a simple and effective way of fabricating molybdenum disulfide (MoS₂) nanoscrolls by self‐rolling up fractured monolayer CVD‐grown MoS₂ microflakes. Morphological results reveal that MoS₂ nanoscrolls are formed only at newly formed edges, owing to an orientation‐specific fracture behavior. Using Raman spectroscopy, we show that the E¹_2g Raman peak (A_1g peak) for MoS₂ nanoscrolls significantly red‐shifts (blue‐shifts), indicating structural change. The proposed mechanism is that the newly formed edges induced by fracture behavior self‐roll up to nanoscrolls to minimize the surface free energy, meanwhile, the serious lattice contradiction of upper sulfur plane controls the rolling directions. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Effect of temperature–bias annealing on the hysteresis and subthreshold behavior of multilayer MoS2 transistors

The transfer characteristics (I_D–V_G) of multilayers MoS₂ transistors with a SiO₂/Si backgate and Ni source/drain contacts have been measured on as‐prepared devices and after annealing at different temperatures (T_ann from 150 °C to 200 °C) under a positive bias ramp (V_G from 0 V to +20 V). Larger T_ann resulted in a reduced hysteresis of the I_D–V_G curves (from ～11 V in the as‐prepared sample to ～2.5 V after T_ann at 200 °C). The field effect mobility (～30 cm² V^–1 s^–1) remained almost unchanged after the annealing. On the contrary, the subthreshold characteristics changed from the common n‐type behaviour in the as‐prepared device to the appearance of a low current hole inversion branch after annealing. This latter effect indicates a modification of the Ni/MoS₂ contact that can be explained by the formation of a low density of regions with reduced Schottky barrier height (SBH) for holes embedded in a background with low SBH for electrons. Furthermore, a temperature dependent analysis of the subthreshold characteristics revealed a reduction of the interface traps density from ～9 × 10¹¹ eV^–1cm^–2in the as‐prepared device to ～2 × 10¹¹ eV^–1cm^–2after the 200 °C temperature–bias annealing, which is consistent with the observed hysteresis reduction.

Schematic representation of a back‐gated multilayer MoS₂ field effect transistor (left) and transfer characteristics (right) measured at 25 °C on an as‐prepared device and after the temperature–bias annealing at 200 °C under a positive gate bias ramp from 0 V to +20 V.     

Significant Enhancement of Hydrogen Production in MoS2/Cu2ZnSnS4 Nanoparticles

Hydrogen produced from water splitting is a renewable and clean energy source. Great efforts have been paid in searching for inexpensive and highly efficient photocatalysts. Here, significant enhancement of hydrogen production has been achieved by introducing ≈1 mol% of MoS₂ to Cu₂ZnSnS₄ nanoparticles. The MoS₂/Cu₂ZnSnS₄ nanoparticles showed a hydrogen evolution rate of ≈0.47 mmol g⁻¹ h⁻¹ in the presence of sacrificial agents, which is 7.8 times that of Cu₂ZnSnS₄ nanoparticles (0.06 mmol g⁻¹ h⁻¹). In addition, the MoS₂/Cu₂ZnSnS₄ nanoparticles exhibited high stability, and only ≈3% of catalytic activity was lost after a long time irradiation (72 h). Microstructure investigation on the MoS₂/Cu₂ZnSnS₄ nanoparticles reveals that the intimate contact between the nanostructured MoS₂ and Cu₂ZnSnS₄ nanoparticles provides an effective one‐way expressway for photogenerated electrons transferring from the conduction band of Cu₂ZnSnS₄ to MoS₂, thus boosting the lifetime of charge carriers, as well as reducing the recombination rate of electrons and holes.     

Spectroscopic search for the free carrier screening of the excitonic binding

A spectroscopic determination of the energy gap E_g and the exciton energy E_x in highly excited Ge at T = 5–20K is presented. Within 0.05 meV we observe no shift of E_g and E_x up to electron-hole densities of 10¹⁴?10¹⁵ cm^?3. In this range all previous theories predict a sizeable band renormalization (ΔE_g ≈?0.3 meV to ? 2 meV).     

Light Auxiliary Hydrogen‐Evolution Catalyst Based on Uniformly Pt Nanoparticles Decorated Molybdenum Sulfide Hybrids

The electrocatalytic splitting of water via hydrogen evolution reaction (HER) is one of the most efficient technologies for hydrogen production, while the massive consumption of precious Pt‐based catalysts hinders its commercialization, bringing an urgent task to explore low‐cost and earth‐abundant alternatives. Herein, a cost‐efficient system composed of metal Pt/molybdenum disulphide (MoS₂) nanosheets hybrids for the HER by auxiliary of solar light is reported. The uniformly Pt nanoparticle decorated MoS₂ sheets can be easily obtained under hydrothermal condition using oleylamine as capping agent and N,N‐dimethylmethanamide (DMF) as intercalation molecule for MoS₂ exfoliation. The Pt/MoS₂ hybrid shows a significantly enhanced HER activity compared with bare MoS₂ due to enhancing conductivity and reducing overpotential by electron transport between Pt and MoS₂. As a result, a Tafel slope of 38 mV per decade is obtained, suggesting a highly efficient Volmer–Heyrovsky reaction of hydrogen evolution.     

Classical in-plane negative magnetoresistance and quantum positive magnetoresistance in undoped InSb thin films on GaAs (1 0 0) substrates

Magnetoresistance (MR) effects have been investigated in perpendicular and parallel magnetic fields at 300, 80 K and liquid He temperatures for undoped InSb thin films 0.1–2.3 μm thick grown on GaAs(1 0 0) substrates by MBE. At high temperatures, the intrinsic carriers show the parabolic negative MR observable only in magnetic fields parallel to the film. The skipping-orbit effect due to surface boundary scattering in the classical orbits in the plane vertical to the film has been argued to be responsible for the negative MR. At low temperatures (T=80 K), the transport is dominated by the two-dimensional (2D) electrons in the accumulation layers at the InSb/GaAs(1 0 0) hetero interface; MR is positive and shows a logarithmic increase with anisotropy between parallel and perpendicular field orientation, arising from the 2D weak anti-localization (WAL) that reflects the interplay between the spin-Zeeman effect and strong spin–orbit interaction caused by the asymmetric potential at the interface (Rashba term). The zero-field spin splitting energy of Δ₀13 meV, the electron effective mass of m^*0.10m₀ seven times of the band edge mass in bulk InSb and the effective g-factor of |g^*|15 in the accumulation layer have been inferred from fits of MR for the 0.1 μm thick film to the 2D WL theory.     

Photoluminescence study of hydrogen donors in ZnO

A photoluminescence study of hydrogenated ZnO bulk crystals is presented. Two excitonic recombination lines at 3362.8 and 3360.1 meV are assigned to hydrogen shallow donors. Experimental evidence is presented that the corresponding donor to the line at 3362.8 meV, previously labeled I₄, originates from hydrogen trapped within the oxygen vacancy, H_O. The line at 3360.1 meV was found to be due to hydrogen located at the bond-centered lattice site, H_BC. The corresponding shallow donor has an ionization energy of 53 meV.     

Raman scattering studies of spin‐waves in hexagonal BaFe12O19

We present the results of polarized Raman spectroscopy of hexagonal BaFe₁₂O₁₉ single crystal. The spectra, recorded from 200 to 800 cm^–1 and 1100 to 1700 cm^–1 in the 20–250 K temperature range, are analyzed on the basis of both crystal vibrations and spin‐waves. In the low wavenumber range, the Γ‐point phonons are observed. In the high wavenumber range, phonon mixings are observed; more interestingly, four modes of spin‐waves are identified in hexagonal BaFe₁₂O₁₉. Both have not been studied previously. Our analyses of the spin‐waves provide an optical method for quantitatively estimating the spin exchange interactions in hexagonal BaFe₁₂O₁₉. The four strong exchange integrals are found to have the values of J_ce = 1.31 meV, J_ae = 1.36 meV, J_cd = 1.46 meV, and J_bd = 1.71 meV. Our results also indicate that at ~200 and ~80 K, there would be additional spin‐ordering transitions in hexagonal BaFe₁₂O₁₉. Copyright © 2012 John Wiley & Sons, Ltd.     

Measurement of C2 and CH temperatures in argon‐acetylene low‐pressure microwave‐induced plasma

The emission spectra of C₂(d³Π_g–a³Π_u), CH(A²Δ–X²Π), and CH(B²Σ–X²Π) bands are analysed to measure rotational T_rot, vibrational T_vib, and gas temperature T_g from Ar/C₂H₂ (5–20% C₂H₂) microwave‐induced plasma (MIP). In case when helium and hydrogen are used in the gas mixture instead of argon, no significant change in T_rot is noticed. Both studied temperatures are insensitive in terms of the C₂H₂ percentage. From CH(0–0, A²Δ–X²Π) band R₂ branch lines, two T_rot (T_rot ～ 520–580 K for J′ = 3–9 and T_rot ～ 1,700–1,800 K for J′ = 10–17) are determined. The lower T_rot equals the T_g (500–700 K) measured from C₂ bands in this study. The H₂ Fulcher‐α diagonal bands are recorded as well in the H₂/C₂H₂ mixtures and T_rot～750–900 K of the H₂ ground state measured. T_vib ～ 6,000 K in Ar/C₂H₂ MIP is calculated from the integral intensity ratio of C₂(2,1) and C₂(3,2) bands.     

Layer‐dependent resonant Raman scattering of a few layer MoS2

We report resonant Raman scattering of MoS₂ layers comprising of single, bi, four and seven layers, showing a strong dependence on the layer thickness. Indirect band gap MoS₂ in bulk becomes a direct band gap semiconductor in the monolayer form. New Raman modes are seen in the spectra of single‐ and few‐layer MoS₂ samples which are absent in the bulk. The Raman mode at ~230 cm⁻¹ appears for two, four and seven layers. This mode has been attributed to the longitudinal acoustic phonon branch at the M point (LA(M)) of the Brillouin zone. The mode at ~179 cm⁻¹ shows asymmetric character for a few‐layer sample. The asymmetry is explained by the dispersion of the LA(M) branch along the Γ‐M direction. The most intense spectral region near 455 cm⁻¹ shows a layer‐dependent variation of peak positions and relative intensities. The high energy region between 510 and 645 cm⁻¹ is marked by the appearance of prominent new Raman bands, varying in intensity with layer numbers. Resonant Raman spectroscopy thus serves as a promising non invasive technique to accurately estimate the thickness of MoS₂ layers down to a few atoms thick. Copyright © 2012 John Wiley & Sons, Ltd.     

NMR-ON measurements of187WFe,182,183,186ReNi,186ReFe and203PbFe

The magnetic hyperfine splitting frequencies of¹⁸⁷WFe,¹⁸²Re(j ^π=2⁺)Ni,¹⁸³ReNi,¹⁸⁶ReNi,¹⁸⁶ReFe and²⁰³PbFe in a zero external magnetic field have been determined by the NMR-ON method at about 7 mK as 225.56(6), 130.9(1), 98.17(4), 136.6(4), 1007.0(3) and 58.43(3) MHz, respectively. With the knowng-factors ofg(¹⁸⁶Re, 1⁻)=1.739(3) andg(²⁰³Pb, 5/2⁻)=0.27456(20), the following hyperfine fields were deduced:B _HF(¹⁸⁶ReNi)=−103.05(35) kG;B _HF(¹⁸⁶ReFe)=−759.7(13) kG;B _HF(²⁰³PbFe)=+279.18(25) kG. Taking hyperfine anomalies into account, theg-factor of¹⁸³Re was deduced as |g(¹⁸³Re, 5/2⁺)|=1.267(6). With the assumption of Knight shift factorK=0, theg-factors of¹⁸²Re and¹⁸⁷W and the hyperfine field of¹⁸⁷WFe were determined as |g(¹⁸²Re, 2⁺)|=1.63(5), |g(¹⁸⁷W, 3/2⁻)|=0.414(10) andB _HF(¹⁸⁷WFe) =−714(18) kG. The large hyperfine anomaly was deduced to be¹⁸³W Δ¹⁸⁷W =−0.124(22).     

Wintersweet Branch‐Like C/C@SnO2/MoS2 Nanofibers as High‐Performance Li and Na‐Ion Battery Anodes

Structure and morphology of molybdenum disulfide (MoS₂) play an important role in improving its reversible lithium storage and sodium storage as anodes. In this study, a facile method is developed to prepare C/C@SnO₂/MoS₂ nanofibers with MoS₂ nanoflakes anchoring on the core–shell C/C@SnO₂ nanofibers through hydrothermal reaction. By adjusting the concentration of MoS₂ precursors, the synthesized MoS₂ with different slabs dimensions, size, and morphologies are obtained, constituting budding and blooming wintersweet branch‐like composite structure, respectively. Owing to scattered MoS₂ nanoparticles and sporadic MoS₂ nanoflakes, the budding wintersweet branch‐like composite nanofibers processes less slabs of staking in number and large specific surface area. Benefiting from the exposed C@SnO₂ shell layer, the synergistic effect among SnO₂, carbon, and MoS₂ is strengthened, which maximizes the advantage of each material to exhibit stable specific capacities of 650 and 230 mAh g^?1 for Li‐ion batteries and Na‐ion batteries after 200 cycles.     

Reevaluation of bandgap and free exciton binding energy of GaP

Very sensitive measurements on the spectral behaviour of the free-to-bound excitation σ_pl^°(hν) from the valence band to the deep 0 donor in GaP at low temperatures are presented. Evaluation of the threshold energy for the electronic transition, together with the known value of the 0 binding energy, provides a simple and accurate way to determine the indirect bandgap E_g of GaP. Our new value is E_g = 2.3525 ± 0.003 eV at 1.5 K, which gives an exciton binding energy E_x = 24 ± 3 meV, considerably larger than previously used values. These data also imply an upward revision of acceptor binding energies in GaP with 10 ± 2 meV.     

Low-temperature photoluminescence in CuIn<Subscript>5</Subscript>S<Subscript>8</Subscript> single crystals

Photoluminescence (PL) spectra of CuIn₅S₈ single crystals grown by Bridgman method have been studied in the wavelength region of 720–1020 nm and in the temperature range of 10–34 K. A broad PL band centred at 861 nm (1.44 eV) was observed at T = 10 K. Variations of emission band has been studied as a function of excitation laser intensity in the 0.5– 60.2 mW cm^?2 range. Radiative transitions from shallow donor level located at 17 meV below the bottom of the conduction band to the acceptor level located at 193 meV above the top of the valence band were suggested to be responsible for the observed PL band. An energy level diagram showing transitions in the band gap of the crystal has been presented.     

High‐order Stokes and anti‐Stokes Raman generation in monoisotopic CVD 12C‐diamond

We determined, for the first time, the room temperature phonon energy related to the F_2g vibration mode (ω_SRS(12C) ～ 1333.2 cm^–1) in a mono‐crystalline single‐isotope CVD ¹²C‐diamond crystal by means of stimulated Raman scattering (SRS) spectroscopy. Picosecond one‐micron excitation using a Nd³⁺:Y₃Al₅O₁₂‐laser generates a nearly two‐octave spanning SRS frequency comb (～12000 cm^–1) consisting of higher‐order Stokes and anti‐Stokes components. The spacing of the spectral lines was found to differ by Δω_SRS ～ 0.9 cm^–1 from the comb spacing (ω_SRS(natC) ～ 1332.3 cm^–1) when pumping a conventional CVD diamond crystal with a natural composition of the two stable carbon isotopes ¹²C (98.93%) and ¹³C (1.07%). (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)