一种碳纳米管场效应管的HSPICE模型

为在HSPICE中建立一种计算简单且精度较高的碳纳米管场效应管 (carbon nanotube field effect transistor, CNTFET) 模型, 在CNTFET半经典建模方法的基础上, 分析了自洽电势与载流子密度之间的关系, 提出用线性近似进行拟合, 并推导了自洽电势的显式表达式, 从而避免了积分方程的迭代求解过程. 然后在HSPICE中建立了相应的CNTFET模型, 通过仿真比较, 结果表明该模型具有较高的精度, 用其构建的逻辑门电路能够实现相应逻辑功能, 且运算时间大为减少. 关键词： 碳纳米管场效应管 半经典模型 线性近似拟合 HSPICE仿真     

基于梯度掺杂策略的碳纳米管场效应管性能优化

双极性传输特性是制约碳纳米管场效应管(carbon nanotube field effect transistors,CNFETs)性能提高的一个重要因素.为降低器件的双极性传输特性并获得较大的开关电流比,提出了一种漏端梯度掺杂策略,该策略不仅适合于类MOS碳纳米管场效应管(C-CNFETs),同时也适合于隧穿碳纳米管场效应管(T-CNFETs).基于非平衡格林函数的数值研究结果表明,该策略不仅能有效降低器件的双极传输特性,而且能将器件开关电流比提高数个数量级.进一步研究发现,该掺杂策略在这两类碳纳米管 关键词： 梯度掺杂 带间隧穿 双极性传输 碳纳米管场效应管     

欠叠异质栅纳米碳管场效应管的量子输运特性（英文）

采用量子力学模型,对欠叠栅对传统单质栅碳纳米管场效应管(简称C-CNTFET)和异质栅碳纳米管场效应管(简称HMG-CNTFET)电学特性的影响进行理论研究,该模型基于二维非平衡格林函数(NEGF)泊松方程自洽求解.仿真结果表明,C-CNTFET的截止频率可高达THz量级,另外,通过比较C-和HMG-CNTFET可以看出,CCNTFET增加欠叠栅后能够提高器件的开关速度,但不利于提高器件的开关电流比.在HMG-CNTFET中,欠叠栅的采用不仅能够同时改善亚阈值特性和开关电流比,还能降低输出电导.     

浅海小掠射角的海底界面声反向散射模型的简化

在浅海,尤其是负梯度声速剖面和海面较为平静的浅海波导,海底界面反向散射是浅海混响的主要来源.经验散射模型只适用于分析浅海混响平均强度衰减特性,而基于物理机理建立的反向散射模型克服了这一缺陷,但同时也引入了其受地声模型约束的问题.本文结合了海底反射系数的三参数模型,对浅海远场海底反向散射模型进行了简化,以减少地声模型的输入参数.理论分析了海底反射系数的相移参数可以描述海底对声场的散射作用,无需任何海底地声参数的先验知识.通过对海底反向散射模型近似简化,结果表明在临界角附近和甚小掠射角范围内的海底粗糙界面反向散射模型的角度特性和强度特性受海底沉积层的影响不同:在临界角附近,海底反向散射的角度特性受海底反射系数的相移参数加权,而其散射系数则近似与相移参数无关;对于甚小掠射角,海底反向散射的角度特性近似与海底反射系数的相移参数无关,其散射系数则近似与相移参数的4次方成正比.     

一种碳纳米管场效应管半经典模型计算方法

基于弹道输运的碳纳米管场效应管半经典模型求解自洽电势通常采用牛顿-拉夫逊迭代法,每次迭代都需要对态密度方程积分计算,运算量巨大.我们用支持向量回归机近似表达自洽电势与载流子密度之间的关系,不需要反复迭代积分,并用梯度下降法求解自洽电势.仿真结果表明,与牛顿-拉夫逊迭代法比较,该方法精度较高,有效降低了运算量,为今后大规模集成电路中碳纳米管器件的设计和应用奠定理论基础.     

AlGaN/GaN高电子迁移率晶体管中二维电子气的极化光学声子散射

Al Ga N/Ga N界面处的二维电子气迁移率是描述高电子迁移率晶体管特性的一个重要参数,极化光学声子散射是高温时限制二维电子气迁移率的主要散射机制.本文对极化光学声子散射进行计算,结果表明在二维电子气浓度为6×10~(11)—1×10~(13) cm~(–2),温度为200—400 K范围内,极化光学声子散射因素决定的迁移率随温度的变化近似为μPO=AT-α(α=3.5);由于Ga N中光学声子能量较大,吸收声子对迁移率的影响远大于发射声子的影响.进一步讨论了极化光学声子散射因素决定的迁移率随光学声子能量变化的趋势,表明增加极化光学声子能量可提高二维电子气的室温迁移率.     

GaN薄膜的热导率模型研究

准确预测GaN半导体材料的热导率对GaN基功率电子器件的热设计具有重要意义.本文基于第一性原理计算和经典Debye-Callaway模型,通过分析和完善Debye-Callaway模型中关于声子散射率的子模型,建立了用于预测温度、同位素、点缺陷、位错、薄膜厚度、应力等因素影响的GaN薄膜热导率的理论模型.具体来说,对声子间散射项和同位素散射项基于第一性原理计算数据进行了系数拟合,讨论了两种典型的处理点缺陷和位错散射的散射率模型,引入了应用抑制函数描述的各向异性边界散射模型,并对应力的影响进行了建模.热导率模型预测值和文献中典型实验数据的对比表明,基于第一性原理计算数据拟合的热导率模型和实验测量值总体符合较好,300 K温度附近热导率数值及其随温度变化的趋势存在20%左右的偏差.结合实验数据和热导率模型进一步确认了第一性原理计算会高估同位素散射的影响,给出了薄膜热导率随薄膜厚度、位错面密度、点缺陷浓度的具体变化关系,同位素和缺陷散射会减弱薄膜热导率的尺寸效应,主要体现在100 nm附近及更小的厚度范围.     

一种基于双栅材料的单极性类金属氧化物半导体碳纳米管场效应管设计方法

由于导电沟道-源/漏电极界面处可能发生的载流子带间隧穿,传统类金属氧化物半导体(MOS)碳纳米管场效应管呈现双极性传输特性,极大影响了器件性能的提高及其在电路中的应用.为获得具有理想单极性传输特性的类MOS碳纳米管场效应管,本文提出了一种基于双栅材料的器件设计方法.模拟结果表明,通过合理选取调节电极材料,在不影响器件亚阈值斜率的同时,该设计方法不仅能使开关电流比增大6—9个数量级,有效调节阈值范围,而且能有效消除传统类MOS碳纳米管场效应管的双极性传输特性.进一步研究表明,该设计所获得的器件性能提高与调节     

亚微米DSOI MOSFET非平衡热电耦合模拟

本文利用电子-光学声子-声学声子散射非平衡能量热电耦合模型数值模拟了DSOI MOSFET,得到了器件静电势、电子浓度和温度分布、声子温度等分布,分析了其热电性质。结果表明在栅极靠漏区是器件热电特性变化最为显著,DSOI器件自热效应很小,具有很好的热电特性,在亚微米器件中的确存在非平衡能量状态。     

非共振条件下单壁碳纳米管拉曼散射强度的计算

利用非共振情况下的键极化模型理论，对单壁碳纳米管的拉曼光谱强度进行了研究.考察了碳纳米管结构、入射光和散射光的偏振方向以及管轴的取向对散射光强度的影响.计算结果表明，光的偏振方向对拉曼散射强度影响较大，而手性对拉曼光谱的影响较小.针对碳管样品的实际情况，给出了无规取向碳管的拉曼散射光谱. 关键词： 碳纳米管 拉曼散射 声子 键极化     

Monte Carlo study of coaxially gated CNTFETs: capacitive effects and dynamic performance

Carbon nanotubes (CNT) appear as a promising candidate to shrink field-effect transistors (FET) to the nanometer scale. Extensive experimental works have been performed recently to develop the appropriate technology and to explore DC characteristics of a carbon nanotube field effect transistor (CNTFET). In this work, we present results of a Monte Carlo simulation of a coaxially gated CNTFET, including electron–phonon scattering. Our purpose is to present the intrinsic transport properties of such material through the evaluation of the electron mean-free-path. To highlight the potential of the high performance level of CNTFET, we then perform a study of the DC characteristics and of the impact of capacitive effects. Finally, we compare the performance of CNTFET with that of a Si nanowire MOSFET. To cite this article: H. Cazin d'Honincthun et al., C. R. Physique 9 (2008).     

Contact and phonon scattering effects on quantum transport properties of carbon-nanotube field-effect transistors

We investigated the phonon scattering effects on the transport properties of carbon nanotube devices with micron-order lengths at room temperature, using the time-dependent wave-packet approach based on the Kubo formula within a tight-binding approximation. We studied the scattering effects of both the longitudinal acoustic and the optical phonons on the transport properties. The conductance of semiconducting nanotubes is decreased by the acoustic phonon, instead of the optical phonon. Furthermore, we clarified how the electron mobilities of the devices are affected by the acoustic phonon.     

LDC-CNTFET: A carbon nanotube field effect transistor with linear doping profile channel

In this paper, a novel carbon nanotube field effect transistor with linear doping profile channel (LDC-CNTFET) is presented. The channel impurity concentration of the proposed structure is at maximum level at source side and linearly decreases toward zero at drain side. The simulation results show that the leakage current, on-off current ratio, subthreshold swing, drain induced barrier lowering, and voltage gain of the proposed structure improve in comparison with conventional CNTFET. Also, due to spreading the impurity throughout the channel region, the proposed structure has superior performance compared with a single halo CNTFET structure with equal saturation current. Design considerations show that the proposed structure enhances the device performance all over a wide range of channel lengths.     

Scattering effects on the performance of carbon nanotube field effect transistor in a compact model

Carbon nanotube field-effect transistors (CNTFET) are being extensively studied as possible successors to CMOS. Device simulators have been developed to estimate their performance in sub-10-nm and device structures have been fabricated. In this work, a new compact model of single-walled semiconducting CNTFET is proposed implementing the calculation of energy conduction sub-band minima and the treatment of scattering effects through energy shift in CNTFET. The developed model has been used to simulate I-V characteristics using VHDL-AMS simulator.     

基于异质双栅电极结构提高碳纳米管场效应晶体管电子输运效率

为改善碳纳米管场效应晶体管(CNTFET)器件性能, 提高电子输运效率, 提出了一种异质双金属栅(HDMG)电极结构CNTFET器件. 通过对单金属栅(SMG)-CNTFET器件输运模型的适当修改, 实现了对HDMG-CNTFET器件电子输运特性的研究.研究结果表明, 对于所提出的HDMG结构器件, 如果固定源端金属栅S-gate的功函数W_GS使其等于本征CNT 的功函数, 而选取漏端金属栅D-gate的功函数W_Gd, 使其在一定范围内小于W_GS, 可优化器件沟道中的电场分布, 提高器件沟道电子平均输运速率; 同时由于HDMG-CNTFET的D-gate对沟道电势具有调制作用, 使该器件阈值电压降低, 导致在相同的工作电压下, HDMG-CNTFET器件具有更大的通态电流; 而D-gate对漏电压的屏蔽作用又使HDMG-CNTFET与SMG-CNTFET相比具有更好的栅控能力 及减小 漏极感应势垒降低效应、热电子效应和双极导电性等优点. 本研究通过合理选取HDMG-CNTFET双栅电极的功函数, 有效克服了现有研究中存在的改善CNTFET性能需要以减小通态电流为代价的不足, 重要的是提高了器件的电子输运效率, 进而可提高特征频率、减小延迟时间, 有利于将CNTFET器件应用于高速/高频电路. 关键词： CNTFET 异质双栅 电子输运效率 双极导电性     

Low bias electron scattering in structure-identified single wall carbon nanotubes: role of substrate polar phonons

We have performed temperature-dependent electrical transport measurements on known structure single wall carbon nanotubes at low bias. The experiments show a superlinear increase in nanotube resistivity with temperature, which is in contradiction with the linear dependence expected from nanotube acoustic-phonon scattering. The measured electron mean free path is also much lower than expected, especially at medium to high temperatures (>100 K). A theoretical model that includes scattering due to surface polar phonon modes of the substrates reproduces the experiments very well. The role of surface phonons is further confirmed by resistivity measurements of nanotubes on aluminum nitride.     

基于碳纳米管场效应管构建的纳电子逻辑电路

展示了由碳纳米管场效应管构成的三种逻辑电路，分别为单个p型碳纳米管场效应管的开关电路、由集成在同一片硅片上的单个p型碳纳米管场效应管和单个n型掺氮碳纳米管场效应管构成的互补型反相器，以及两个独立的p型碳纳米管场效应管构成的或非门. 其中p型碳纳米管场效应管以单壁碳纳米管作为沟道，而n型碳纳米管场效应管则以掺氮的多壁碳纳米管作为沟道，器件的源漏电极均为铂电极. 关键词： 碳纳米管 场效应管 逻辑电路     

Specific features of low-frequency vibrational dynamics and low-temperature heat capacity of double-walled carbon nanotubes

A continuous model has been constructed for low-frequency dynamics of a double-walled carbon nanotube. The formation of the low-frequency part of the phonon spectrum of a double-walled nanotube from phonon spectra of its constituent single-walled nanotubes has been considered in the framework of the proposed approach. The influence of the environment on the phonon spectrum of a single double-walled carbon nanotube has been analyzed. A combined method has been proposed for estimating the coefficients of the van der Waals interaction between the walls of the nanotube from the spectroscopic data and the known values of the elastic moduli of graphite. The low-temperature specific heat has been calculated for doublewalled carbon nanotubes, which in the field of applicability of the model (T < 35 K) is substantially less than the sum of specific heats of two individual single-walled nanotubes forming it.