Theoretical investigation of laser pulse width dependence in a thermal confinement regime

Previous molecular dynamics (MD) simulations of ultraviolet (UV) laser ablation demonstrate the distinct dependence of material ejection on laser fluence and laser pulse duration. In this paper, we examine the pulse width dependence when the laser pulse widths are appropriate for the thermal confinement regime. We perform MD simulations of laser ablation with a laser pulse duration of 1 ns and compare with a pulse width of 150 ps as in previous simulations. The simulations confirm that the pulse width in thermal confinement regime does not dramatically influence the molecular ejection mechanism. The simulations reveal differentiations, however, in plume composition and the ablation threshold value. PACS 02.70.Ns; 61.80.Az; 79.20.Ap     

短脉冲激光刻蚀加工铜材料的机制

 利用数值模拟方法，研究波长1 064 nm、脉冲宽度介于1~20 ps的激光在刻蚀铜靶时，单次脉冲作用下非平衡场刻蚀和热平衡刻蚀两种机制的竞争过程。结果表明：随着脉冲宽度的增加，刻蚀过程由非平衡电荷分离场刻蚀占主导地位转变为热平衡刻蚀起主要作用，且脉冲宽度和激光峰值功率密度增大到一定程度后，各种电子加速机制在不同时刻开始突显，电子能量分布出现多峰结构。在能量密度为15 J/cm2的激光作用下，1和5 ps脉宽对应的非平衡场刻蚀深度分别为110和101 nm，10和20 ps脉宽分别为25和18 nm。     

Laser processing for deposition of high Tc superconducting films

Model considerations are applied to investigate the process of pulsed laser deposition of high T_c superconducting films. At low power densities, heat conduction and evaporation above a thermal threshold energy dominate. Increase of the laser flux results in the generation of a dense plasma with a mass ablation flow away from the target. According to different wave lengths the relation of the energy density to the pulse duration is estimated. Very short light pulses above a threshold energy density favour the ablation of a stoichiometric mass flow from a multicomponent target and suppress evaporation according to different vapor pressures.     

高温合金不同脉宽超快激光作用下多脉冲去除阈值

实验研究了激光脉冲宽度和脉冲个数对镍基高温合金材料去除阈值的影响,分别在290 fs,1 ps和7 ps脉宽的激光下,使用1,10,50,100,300,500和1000个不同能量的激光脉冲辐照高温合金样品表面。实验结果表明,烧蚀坑尺寸会随脉冲数的增加而增加,而脉冲宽度的增加会加大脉冲个数对烧蚀坑直径的影响。通过烧蚀坑直径的平方值与激光脉冲能量之间存在的对数关系,得到了不同脉冲宽度下镍基高温合金的多脉冲材料阈值。3种不同脉宽下的高温合金多脉冲去除阈值都存在显著的累积效应。根据去除阈值计算得到290 fs,1 ps和7 ps脉宽下的累积效应系数分别为0.88,0.86和0.78。     

Single-shot UV-laser ablation of polyimide with variable pulse lengths

Single-shot laser ablation of polyimide has been investigated with UV-Ar⁺-laser radiation ( = 270-315 nm) for pulse lengths between 140 ns and 5 µs. The irradiated polymer surface was studied with respect to its morphology and ablated depth by means of atomic force microscopy. The dependence of the ablation threshold on laser pulse-length and intensity can be tentatively interpreted on the basis of a thermal process and a (thermal or non-thermal) mechanism which diminishes the activation energy for the desorption of species from the surface.     

Dynamics of the ejected material in ultra-short laser ablation of metals

A molecular dynamics model is applied to study the formation and the early stages of ejection of material in ultra-short laser ablation of metals in vacuum. Simulations of the ablation process for iron at a pulse duration of 0.1 ps and at different laser fluences are performed. Different features of the ejection mechanism are observed below, near, and above the ablation threshold. The last is estimated as approximately 0.1 J/cm². The structure of the ablated material is found to depend on the applied laser fluence. The expanded plume consists mainly of large clusters at fluences near to the threshold. With the increase of the laser fluence the presence of the large clusters decreases. Clear spatial segregation of species with different sizes is observed in the direction normal to the surface several tens of picoseconds after the laser pulse onset. The angular distribution of the ejected material is estimated for different regimes of material removal. Above the ablation threshold the distribution is forward peaking. PACS 79.20.Ds; 52.38.Mf; 02.70.Ns; 81.05.Bx     

飞秒激光激发空气电离的阈值研究

报道在脉宽50fs—22ps,波长800nm脉冲激光作用下的空气电离阈值的研究结果.利用探测等离子体发光信号的方法,实验测量了激发空气电离所需的阈值激光强度.结果表明,当激光脉冲宽度从50fs增加到22ps时,阈值光强I_th从8.7×10¹⁴W/cm²下降到2.7×10¹³W/cm²;I_th经历了由迅速降低逐渐发展为缓慢降低的过程.在50fs—1p 关键词： 飞秒激光 阈值 多光子电离 碰撞电离     

短脉冲激光加工双温方程的优化运算

为研究双温方程中电子热传导项和电子与晶格耦合项对激光辐照物体表面温度场求解的影响,对这两项施加了约束条件。由于飞秒和亚皮秒激光与物质相互作用时间短,电子与晶格来不及耦合,所以对耦合项施加时间约束;根据相分离条件(CPPS),对热传导项施加空间约束。利用有限元方法建立了激光烧蚀金属铜膜表面的有限元模型。通过分析双温方程中热传导项和耦合项对计算结果的影响,发现短脉冲激光与铜金属相互作用过程中电子与晶格耦合项可以忽略,而传导项不可忽略。求解适当激光功率下的双温方程,得到了激光作用中心电子与晶格在不同脉冲宽度激光辐照下的温度变化关系。根据100 fs激光作用后晶格温度场的空间分布情况,研究了激光作用的相分离区域、相爆炸区域以及熔融区域的分布情况。     

飞秒激光激发空气电离的阈值研究

报道在脉宽50fs—22ps，波长800nm脉冲激光作用下的空气电离阈值的研究结果.利用探测等离子体发光信号的方法，实验测量了激发空气电离所需的阈值激光强度.结果表明，当激光脉冲宽度从50fs增加到22ps时，阈值光强I_th从8.7×10¹⁴W/cm²下降到2.7×10¹³W/cm²；I_th经历了由迅速降低逐渐发展为缓慢降低的过程.在50fs—1p     

Surface ablation оf aluminum and silicon by ultrashort laser pulses of variable width

Single-shot thresholds of surface ablation of aluminum and silicon via spallative ablation by infrared (IR) and visible ultrashort laser pulses of variable width τ_las (0.2–12 ps) have been measured by optical microscopy. For increasing laser pulse width τ_las < 3 ps, a drastic (threefold) drop of the ablation threshold of aluminum has been observed for visible pulses compared to an almost negligible threshold variation for IR pulses. In contrast, the ablation threshold in silicon increases threefold with increasing τ_las for IR pulses, while the corresponding thresholds for visible pulses remained almost constant. In aluminum, such a width-dependent decrease in ablation thresholds has been related to strongly diminished temperature gradients for pulse widths exceeding the characteristic electron-phonon thermalization time. In silicon, the observed increase in ablation thresholds has been ascribed to two-photon IR excitation, while in the visible range linear absorption of the material results in almost constant thresholds.     

Selective ablation of thin SiO<Subscript>2</Subscript> layers on silicon substrates by femto- and picosecond laser pulses

The selective ablation of thin (∼100 nm) SiO₂ layers from silicon wafers has been investigated by applying ultra-short laser pulses at a wavelength of 800 nm with pulse durations in the range from 50 to 2000 fs. We found a strong, monotonic decrease of the laser fluence needed for complete ablation of the dielectric layer with decreasing pulse duration. The threshold fluence for 100% ablation probability decreased from 750 mJ/cm² at 2 ps to 480 mJ/cm² at 50 fs. Significant corruption of the opened Si surface has been observed above ∼1200 mJ/cm², independent of pulse duration. By a detailed analysis of the experimental series the values for melting and breaking thresholds are obtained; the physical mechanisms responsible for the significant dependence on the laser pulse duration are discussed.     

Nanosecond pulsed laser ablation of silicon in liquids

Laser fluence and laser shot number are important parameters for pulse laser based micromachining of silicon in liquids. This paper presents laser-induced ablation of silicon in liquids of the dimethyl sulfoxide (DMSO) and the water at different applied laser fluence levels and laser shot numbers. The experimental results are conducted using 15 ns pulsed laser irradiation at 532 nm. The silicon surface morphology of the irradiated spots has an appearance as one can see in porous formation. The surface morphology exhibits a large number of cavities which indicates as bubble nucleation sites. The observed surface morphology shows that the explosive melt expulsion could be a dominant process for the laser ablation of silicon in liquids using nanosecond pulsed laser irradiation at 532 nm. Silicon surface’s ablated diameter growth was measured at different applied laser fluences and shot numbers in both liquid interfaces. A theoretical analysis suggested investigating silicon surface etching in liquid by intense multiple nanosecond laser pulses. It has been assumed that the nanosecond pulsed laser-induced silicon surface modification is due to the process of explosive melt expulsion under the action of the confined plasma-induced pressure or shock wave trapped between the silicon target and the overlying liquid. This analysis allows us to determine the effective lateral interaction zone of ablated solid target related to nanosecond pulsed laser illumination. The theoretical analysis is found in excellent agreement with the experimental measurements of silicon ablated diameter growth in the DMSO and the water interfaces. Multiple-shot laser ablation threshold of silicon is determined. Pulsed energy accumulation model is used to obtain the single-shot ablation threshold of silicon. The smaller ablation threshold value is found in the DMSO, and the incubation effect is also found to be absent.     

一种激光驱动的超短X射线光源

介绍一种可产生超短脉冲的新型Ｘ射线光源。它由多碱光电阴极、金靶及铍输出窗组成，当该射线管的阴极受到强光照射时，产生光电子发射，并经电场加速后轰击金靶，产生连续谱的Ｘ射线轫致辐射，经铍窗输出。用超短的可见光脉冲驱动该光源，并借助Ｘ射线扫描相机测量了该管的Ｘ射线输出，获得了５ｐｓ的Ｘ射线脉冲，这种光源可方便地用来标定Ｘ射线扫描相机的时间分辨率，此种产生超短电子脉冲的方法可在其他方面获得应用。     

532nm皮秒脉冲激光对单晶硅的损伤特性研究

随着光电对抗和超短脉冲激光技术的发展,研究超短脉冲激光与单晶硅相互作用具有非常重要的理论和实际意义.为了进一步明确532 nm皮秒脉冲激光对单晶硅的损伤机理,本文开展了532 nm皮秒脉冲激光辐照单晶硅的损伤效应实验研究,测定了损伤阈值,明确了损伤机理,探讨了低通量下的脉冲累积效应.首先,利用波长为532 nm、脉冲宽...     

Dynamics of excimer laser ablation of polyimide determined by time-resolved reflectivity

The time-dependent intensity profile of pulsed KrF excimer laser radiation reflected from polyimide is determined over a range of laser fluences, from well below to above the ablation threshold. The reflected laser beam is truncated once the incident laser radiation exceeds a threshold fluence, i.e., truncation depends on the energy per unit area and not on the intensity, analogous to results for the ablation threshold and the etch depth per pulse. The threshold fluence for pulse truncation corresponds to the onset of ablation. The results indicate that the truncation is not due to laser plasma interactions at these fluences. A general mechanism is discussed involving a time dependent index of refraction.     

Investigation of the passive mode locking in a La-Nd-Mg hexaaluminate-doped laser

Passive mode locking is reported for the first time in a La-Nd-Mg hexaaluminate-doped laser. A 10 ps duration of an ultrashort pulse limited by the optical damage threshold of the crystal is attained.     

数值模拟飞秒激光加热金属的热电子发射

研究了超短超强激光脉冲与薄膜靶相互作用中产生的电子热发射.当超短激光脉冲与薄膜靶相互作用时,首先入射超短脉冲激光对吸收深度内的自由电子进行热激发,接下来热激发电子将能量传递到附近的晶格,再通过电子和晶格二体系的热传导,以及电子晶格间的热耦合,将能量传递到材料的内部.因此,电子在皮秒级甚至更短的时间内不能与晶格进行能量耦合,使电子温度超出晶格温度很多,电子热发射就变得非常明显了.用双温方程联合Richardson-Dushman方程的方法对飞秒脉冲激光照射金属靶的电子热发射进行了研究,结果发现电子热发射对飞     

脉冲CO2激光烧蚀锡靶等离子体的数值研究

使用一维辐射流体力学程序MULTI模拟了脉冲CO2激光烧蚀平面锡靶的过程,研究了脉冲宽度、峰值功率密度、靶材初始密度对锡等离子体电子密度、电子温度的时空分布的影响,并结合统计分析得到最有利于产生13.5 nm 极紫外光的激光脉冲宽度。模拟结果表明,脉冲宽度为100~200 ns的长脉冲激光产生的等离子体有利于实现极紫外输出的最佳条件,通过分析等离子体的电子密度、电子温度的分布对这一结论进行了解释。临界电子密度区域有效吸收了脉冲能量,而低密度的羽辉对激光与极紫外辐射的吸收很少。采用长脉冲激光,使得辐射极紫外等离子体持续时间更长,是提高极紫外辐射效率的有效手段。同时模拟还发现,靶材初始密度对等离子体参数的影响不大。     

Analysis of Frequency Spectrum of Laser-Induced Vibration of Microbeam Resonators

The vibration phenomenon during pulsed laser heating of micro-beams is investigated. The beam is made of silicon and is heated by a laser pulse with a non-Gaussian temporal profile and with an ultrashort pulse duration of 2ps, which incites vibration due to the thermoelastic damping effect. This coupled thermoelastic problem is solved using an analytical-numerical technique based on the Laplace transformation. The damping ratio and resonant frequency shift ratio of beams due to the air damping effect and the thermoelastic damping effect are also examined and discussed.