Effect of out-of-plane misfit strain on phase diagrams and ferroelectric properties of ferroelectric films in vertical nanocomposite structures

A phenomenological thermodynamic Landau–Devonshire theory is developed to investigate phase diagrams of epitaxial ferroelectric films with out-of-plane misfit strain induced by vertical nanocomposites. The thermodynamic potential of ferroelectric films is obtained based on the boundary conditions of three-dimensional clamping induced by the vertical nanocomposites. Our calculated results indicate that the out-of-plane misfit strain modulates the transition temperature and spontaneous polarization of ferroelectric films in a wide range even the substrate does not provide an effective in-plane misfit strain control. An enhanced critical transition temperature up to 803 °C in BaTiO₃ films under a tensile out-of-plane misfit strain is predicted, which is consistent with the experimental result very well. The polarization properties of BaTiO₃ films can also be effectively modulated by the out-of-plane misfit strain which is controlled by the volume fraction of nanopillars in the vertical nanocomposites. Our method provides a theoretical guide for the out-of-plane strain engineering of ferroelectric films.     

Proton conductivity and ferroelectric phase transition in hydrogen-bonded ferroelectric NH4IO3

We report on the ac dielectric permittivity (ε) and the electric conductivity (σ_ω), as function of the temperature 300?K?T4IO₃. The main feature of our measured parameters is that, the compound undergoes a ferroelectric phase transition of an improper character, at (368?±?1)K from a high temperature paraelectric phase I (Pm2₁ b) to a low temperature ferroelectric phase II (Pc21n). The electric conduction seems to be protonic. The frequency dependent conductivity has a linear response following the universal power law (σ_{( ω )}?=?A(T)ω ^{s (T)}). The temperature dependence of the frequency exponent s suggests the existence of two types of conduction mechanisms.     

Microwave study of the soft ferroelectric mode in Sn2P2S6 crystals

This paper presents the results of the investigation of dielectric dispersion in semiconductive ferroelectric Sn₂P₂S₆ crystals over the frequency range 1 kHz to 78.5 GHz. The main dielectric dispersion in Sn₂P₂S₆ is caused by the soft ferroelectric B_u mode and in the vicinity of the Curie point it occurs in the millimeter region. The frequency of the soft mode in the paraelectric phase varies according to v_s = 35 (T-T_c )^½ GHz on approaching the Curie point. The soft mode is strongly overdamped. Close to T_c the relative damping is y/v_s = 14. The dielectric contribution of the soft mode is equal to the static dielectric permittivity and it explains its whole temperature-dependence.     

In-plane and out-of-plane ferroelectric instabilities in epitaxial SrTiO3 films

The in-plane and out-of-plane ferroelectric instabilities in compressed (100)-epitaxial SrTiO3 films were examined by infrared reflection spectroscopy. The strongly stiffened in-plane soft mode frequency softened very slowly on cooling. On the other hand, the silent mode appeared at around 150 K, indicating an out-of-plane ferroelectric transition. This behavior points to a split of in-plane and out-of-plane ferroelectric instability temperatures due to the lowered symmetry of the SrTiO3 lattice caused by mechanical misfit strain. Infrared spectroscopy provides a possibility to detect such an effect in the strained epitaxial ferroelectric films.     

Microwave dielectric dispersion in ferroelectric telluric acid ammonium phosphate

The paper presents the results of the investigation of dielectric dispersion in monoclinic telluric acid ammonium phosphate crystal over the frequency range 1 MHz to 77 GHz. It is shown that ferroelectric dispersion of the Debye type along the direction perpendicular to the plane (101) occurs in the frequency range 10⁸ to 10¹¹ Hz and is caused by a single relaxational soft mode. The relaxational soft mode is caused by the flipping motion of protons between two potential minima in a hydrogen bond. The frequency of the flipping proton mode in the paraelectric phase varies according to v_s = 0.94 (T – T_o ) GHz and decreases to 1.75 GHz at T_c = 317.3 K. The relaxational mode gives the main contribution to the high static dielectric permittivity of this crystal which fits the Curie-Weiss law. The results confirm the order-disorder nature of a proper ferroelectric phase transition of second order.     

High-pressure dielectric studies of a novel hydrogen-bonded ferroelectric (NH4)2H2P2O6

The hydrostatic pressure effect on the dielectric properties of (NH₄)₂H₂P₂O₆ ferroelectric crystal was studied for pressures from 0.1 MPa to 360 MPa and for temperatures from 100 to 190 K. The pressure–temperature phase diagram obtained is linear with increasing pressure. The paraelectric–ferroelectric phase transition temperature decreases with increasing pressure with the pressure coefficient dT_c/dp=?5.16×10^?2 K MPa^?1. Additionally, the pressure dependences of Curie–Weiss constants for the crystal in paraelectric (C₊) and ferroelectric (C_?) phases are evaluated and discussed. The possible mechanism of paraelectric–ferroelectric phase transition is also discussed.     

The thermodynamic functions of ferroelectric and paraelectric SbSI

A first-principle method is used to calculate phonon density of states, Helmholtz free energy, internal energy, and entropy for ferroelectric and paraelectric SbSI. Theoretical phase transition temperature was obtained using the difference of the Helmholtz free energy, internal energy, and entropy term between ferroelectric and paraelectric phases on temperature. The obtained value is in reasonable agreement with the experimental second-order phase transition temperature T_c2 = 233 K.     

Ab initio studies of dielectric,piezoelectric, and elastic properties of BaTiO 3 /SrTiO 3 ferroelectric superlattices

The phonon spectrum; crystal structure of the polar phase; spontaneous polarization; dielectric constant, piezoelectric, and elastic moduli tensors for free_standing and substrate_supported superlattices mBaTiO₃/nSrTiO₃ (with m = n = 1–4) were calculated within the density functional theory. The simulation of properties of the disordered Ba_0.5Sr_0.5TiO₃ solid solution using two special quasirandom SQS-4 structures and their comparison with the properties of the superlattices revealed a tendency of the BaTiO₃-SrTiO₃ system to superstructure ordering and showed that the superlattices are thermodynamically quite stable. The ground state of the free-standing superlattice corresponds to the monoclinic polar phase Cm, which transforms to the tetragonal polar phase P4mm under in-plane compressive strain of the superlattice and to the orthorhombic polar phase Amm2 under in-plane tensile strain. With a change in the in-plane lattice parameter, in the vicinity of boundaries between neighboring polar phases, some optical and acoustic modes soften and some components of the static dielectric constant, piezoelectric, and elastic moduli tensors diverge critically.     

Soft modes and phonon interactions in studied by neutron scattering

The low frequency lattice dynamics and its relationship to the second order paraelectric-to-ferroelectric transition in Sn₂P₂S₆ is studied. The dispersion branches of the acoustic and lowest lying optical phonons in the a^*-c^* plane have been obtained in the ferroelectric phase, for x-polarized phonons. Close to the phase transition a considerable softening is found for the lowest optical mode (P_x), comparable to the behaviour observed in previous Raman investigations. As found previously in Sn₂P₂Se₆, a strong coupling between the TO(P_x) and TA(u_xz) phonons is observed, although, apparently, not strong enough to lead to an incommensurate phase. The soft TO(P_x) mode at the zone center is observed. The temperature dependence of its frequency and damping shows that the transition is not entirely displacive. At low temperatures an unusual apparent negative LO-TO splitting is observed which is shown to arise from the coupling of the x-polarized soft mode to the nearby z-polarized optical phonon. For comparison, the soft TO(P_x) dispersion in the a^*-b^* plane is measured in both the paraelectric and ferroelectric phases. Consistent frequency changes and LO-TO splitting are observed, revealing a significant interaction between the TA(u_yx) and LA(u_xx) acoustics branches and the TO and LO soft optic branches, respectively. In contrast, the nearby y-polarized optic branch shows almost no temperature dependence. Finally, the influence of piezoelectric effects on the limiting acoustic slopes in the ferroelectric phase is discussed. Received: 11 May 1998 / Revised and Accepted: 15 June 1998     

Ferroelectric phase transitions of the 0.32PIN-0.345PMN-0.335PT single crystals studied by temperature-dependent Raman spectroscopy,dielectric and ferroelectric performance

The ferroelectric phase transition characteristics of the 0.32Pb(In_1/2Nb_1/2)O₃-0.345Pb(Mg_1/3Nb_2/3)O₃-0.335PbTiO₃ (0.32PIN-0.345PMN-0.335PT) single crystals were studied by the temperature-dependent Raman spectroscopy and some electrical properties. Ferroelectric monoclinic phase was confirmed at room temperature by the numbers of the Raman modes. Successive ferroelectric phase transitions, i.e. ferroelectric monoclinic phase to ferroelectric tetragonal phase transition (FE_M-FE_T) and ferroelectric tetragonal phase to paraelectric cubic phase transition (FE_T-P_C), are evidenced by the anomalies of Raman modes line width, peaks intensity and their ratios around T_M-T and T_C/T_m temperatures. The temperature dependent permittivity derivative ξ = d?/dT not only provides further evidence of the successive ferroelectric phase transitions, but also demonstrates the second-order transition characteristic of the FE_M-FE_T phase transition and the first-order transition feature of the FE_T-P_C phase transition. The FE_M-FE_T phase transition is also confirmed by the abnormal narrowing of the P-E loops, decrease of the P_r and E_c values, and extremums of the pyroelectric performance.     

Structural phase transition in ferroelectric NH4103

The structural phase transformation between the ferroelectric and paraelectric form of NH₄IO, near 83°C is dominated by tilt motions of IO₆-octahedra within a perovskite-like framework. Simultaneously, small displacements of NH₄ along the polar axis give rise to a switchable spontaneous polarization at low temperatures. As the transition mechanism is governed by the tilting of octahedra and not by the appearance of ferroelectricity, NH₄IO₃ is characterised as an improper ferroelectric material. Although the space group of the high-temperature β-phase is polar, the polarization moment is zero. Raman-active thermal soft modes appear in the ferroelectric phase. The phase transition is first order with anomalies of dielectric, piezoelectric and elastic constants.     

Absence of relaxor-like ferroelectric phase transition in (Pb,Sr)TiO3 thin films

We have performed dielectric and micro-Raman spectroscopy measurements in the 298–673 K temperature range in polycrystalline Pb_0.50Sr_0.50TiO₃ thin films prepared by a soft chemical method. The phase transition have been investigated by dielectric measurements at various frequencies during the heating cycle. It was found that the temperature corresponding to the peak value of the dielectric constant is frequency-independent, indicating a non-relaxor ferroelectric behavior. However, the dielectric constant versus temperature curves associated with the ferroelectric to paraelectric phase transition showed a broad maximum peak at around 433 K. The observed behavior is explained in terms of a diffuse phase transition. The obtained Raman spectra indicate the presence of a local symmetry disorder, due to a higher strontium concentration in the host lattice. The monitoring of some modes, conducted in the Pb_0.50Sr_0.50TiO₃ thin films, showed that the ferroelectric tetragonal phase undergoes a transition to the paraelectric cubic phase at around 423 K. However, the Raman activity did not disappear, as would be expected from a transition to the cubic paraelectric phase. The strong Raman spectrum observed for this cubic phase is indicative that a diffuse-type phase transition is taking place. This behavior is attributed to distortions of the perovskite structure, allowing the persistence of low-symmetry phase features in cubic phase high above the transition temperature. This result is in contrast to the forbidden first-order Raman spectrum, which would be expected from a cubic paraelectric phase, such as the one observed at high temperature in pure PbTiO₃ perovskite. PACS 78.30.-j; 77.80.Bh; 64.70.Kb; 68.55.-a; 77.22.-a; 77.55.+f     

Equal-permittivity states induced in a ferroelectric

Conditions under which a ferroelectric subjected to an electric field acquires equal-permittivity paraelectric states at different temperatures are studied. The temperature dependences of the control (inducing) field intensity and feasible permittivity interval (ɛ_min-ɛ_max) are obtained. The effect of intersection of the ɛ(E, T _i ) characteristics of the ferroelectric in the paraelectric state is analyzed. With the control field and temperature varying consistently, the permittivity ɛ_i of strontium titanate films and films of the barium titanate-strontium titanate solid solution may be kept constant in a wide (200–320 K) temperature range and, at the same time, changed by more than twofold by varying the electric field.     

A new ferroelectric compound: Methylammonium trichloromercurate (CH3NH3HgCl3)

Measurements of the dielectric constants revealed a ferro- to paraelectric transition in methylammonium trichloromercurate (CH₃NH₃HgCl₃). Thermal analysis by differential scanning calorimetry indicates a transition temperature of Tc ≈ 60°C. The structures of both phases were determined from single crystal X-ray measurements. The ferroelectric phase crystallizes at room temperature in the polar trigonal space group $\text{P}\text{3}{}_2\text{(a = b =}\text{7.8117(3)}\text{, c =}\text{9.826(3)}\text{A}\text{?}\text{, Z =}\text{3}\text{)}$. The refinement of the ferroelectric structure included the fractional contribution of the two domains present. The paraelectric phase has monoclinic symmetry (space group C2 with $\text{a =}\text{13.816(2)}\text{, b =}\text{7.880(1)}\text{, c =}\text{9.734(3)}\text{A}\text{?}\text{, β =}\text{90.49(5)°}\text{, Z =}\text{6}\text{)}$ and contains an almost completely disordered methylammonium group while order with pronounced thermal motion is observed in the ferroelectric phase.     

Effects of oxygen partial pressure on the ferroelectric properties of pulsed laser deposited Ba0.8Sr0.2TiO3 thin films

The Ba_0.8Sr_0.2TiO₃ thin films were grown on the Pt–Si substrate at 700 °C by using a pulsed laser deposition technique at different oxygen partial pressure (PO₂) in the range of 1–20 Pa and their properties were investigated. It is observed that the PO₂ during the deposition plays an important role on the tetragonal distortion ratio, surface morphology, dielectric permittivity, ferroelectric polarization, switching response, and leakage currents of the films. With an increase in PO₂, the in-plane strain for the BST films changes from tensile to compressive. The films grown at 7.5 Pa show the optimum dielectric and ferroelectric properties and also exhibit the good polarization stability. It is assumed that a reasonable compressive strain, increasing the ionic displacement, and thus promotes the in-plane polarization in the field direction, could improve the dielectric permittivity. The butterfly features of the capacitance–voltage (C–V) characteristics and the bell shape curve in polarization current were attributed to the domain reversal process. The effect of pulse amplitude on the polarization reversal behavior of the BST films grown at PO₂ of 7.5 Pa was studied. The peak value of the polarization current shows exponential dependence on the electric field.     

Dy掺杂对Sr2Bi4Ti5O18铁电陶瓷性能的影响

用传统固相烧结法制备了Sr₂Bi_4-xDy_xTi₅ O₁₈(SBDT-x, x=0—0.20)陶瓷样品. x射线衍射分析表明, 微量的Dy掺杂没有影 响Sr₂Bi₄Ti₅O₁₈(SBTi) 原有的层状钙钛 矿结构. 通过研究样品的介电特性, 发现Dy掺杂减小了材料的损耗因子, 降低了样品铁电- 顺电相转变的居里温度. 铁电性能测量结果表明, 随Dy含量的增加, SBDT-x系列样品的剩余 极化先增大, 后减小. 当Dy掺杂量为0.01时, 剩余极化达到最大值, 约为20.1 μC·cm^-2. 掺杂引起剩余极化的变化, 与材料中缺陷浓度、内应力以及晶格畸变程度等因 素有关, 是多种作用机理相互竞争的结果. (Bi₂O₂)²⁺ 层通常被看作是绝缘层和空间电荷库, 对材料的铁电性能起关键作用. 掺杂离子进入(Bi2O₂)²⁺层会导致铁电性能变差. 关键词： 2Bi₄Ti₅O₁₈陶瓷')" href="#">Sr₂Bi₄Ti₅O₁₈陶瓷 Dy掺 杂 铁电性能 居里温度     

Propagation of longitudinal ultrasonic waves in RbH2PO4 near its ferroelectric phase transition temperature

Ferroelectric phase transition in RbH₂PO₄ has been investigated using propagation of longitudinal acoustic waves along the polar axis near the transition temperature. The velocity of this mode is continuous across the transition temperature. Velocity data in the ferroelectric phase are analyzed in terms of coupled soft modeacoustic mode model of Pytte to obtain the temperature dependence of the soft mode frequency. The attenuation data in the ferroelectric phase show power law dependence. It follows scaling behaviour of the type predicted by Kawasaki from the mode-mode coupling theory and the dynamical scaling.     

钽酸锂铁电相变的喇曼光谱研究

本文测定了钽酸锂晶体从室温到居里温度以上(20—800℃)的喇曼光谱。没有观察到软模现象。我们发现在居里点附近,铁电相和顺电相的喇曼光谱十分一致,经过居里点喇曼光谱不发生变化。根据这个新的实验结果和文献上关于用中子衍射测定的晶体结构资料,我们做出了钽酸锂的铁电相变为有序无序型的推论。 关键词：     

极性相变的介电谱研究

用时域和频域方法研究了(Ba_1-xSr_x)TiO₃陶瓷的极性相变.类似于单晶的铁电相变所观察到的晶格软化,屏蔽电荷激发和畴运动讯号外,在陶瓷中还出现空间电荷运动的强讯号.空间电荷和电畴属于凝聚态物质的高级结构,它提供慢极化效应.慢效应使频域测量结果不能得到确定值.从统计观点给出高级结构的历史记忆效应对频域测量结果的影响;解释了频域介电常量的倒数在一级结构的转变中发生线性软化,而在高级结构的转变中发生抛物型软化. 关键词：     

High-temperature phase transitions in the improper ferroelectric KIO3

The ac conductivity (σ_ac) and dielectric permittivity (?) are determined in the temperature range 300?K?T3 compound. The results indicated that the compound behaves as an improper ferroelectric and undergoes a ferroelectric phase transition from a high temperature rhombohedral phase I to a low temperature monoclinic phase II at T _c?=?(486?±?1)?K. A second structural phase transition was observed around 345?K. The conductivity varies with temperature range and for T?>?428?K intrinsic conduction prevails. Different activation energies in the different temperature regions were calculated. The frequency dependence of σ(ω) was found to follow the universal dynamic response [σ(ω)∝(ω) ^s(T)]. The thermal behaviour of the frequency exponent s(T) suggests the hopping over the barrier model rather than the quantum mechanical tunneling model for the conduction mechanism.