Effect of temperature oscillation on thermal characteristics of an aluminum thin film

Energy transport in aluminum thin film is examined due to temperature disturbance at the film edge. Thermal separation of electron and lattice systems is considered in the analysis, and temperature variation in each sub-system is formulated. The transient analysis of frequency-dependent and frequency-independent phonon radiative transport incorporating electron–phonon coupling is carried out in the thin film. The dispersion relations of aluminum are used in the frequency-dependent analysis. Temperature at one edge of the film is oscillated at various frequencies, and temporal response of phonon intensity distribution in the film is predicted numerically using the discrete ordinate method. To assess the phonon transport characteristics, equivalent equilibrium temperature is introduced. It is found that equivalent equilibrium temperature in the electron and lattice sub-systems oscillates due to temperature oscillation at the film edge. The amplitude of temperature oscillation reduces as the distance along the film thickness increases toward the low-temperature edge of the film. Equivalent equilibrium temperature attains lower values for the frequency-dependent solution of the phonon transport equation than that corresponding to frequency-independent solution.     

Nonequilibrium Green's function approach to phonon transport in defective carbon nanotubes

We have developed a new theoretical formalism for phonon transport in nanostructures using the nonequilibrium phonon Green's function technique and have applied it to thermal conduction in defective carbon nanotubes. The universal quantization of low-temperature thermal conductance in carbon nanotubes can be observed even in the presence of local structural defects such as vacancies and Stone-Wales defects, since the long wavelength acoustic phonons are not scattered by local defects. At room temperature, however, thermal conductance is critically affected by defect scattering since incident phonons are scattered by localized phonons around the defects. We find a remarkable change from quantum to classical features for the thermal transport through defective carbon nanotubes with increasing temperature.     

Mesoscopic thermal and thermoelectric measurements of individual carbon nanotubes

We discuss the mesoscopic experimental measurements of electron energy dissipation, phonon thermal transport, and thermoelectric phenomena in individual carbon nanotubes. The temperature distributions in electrically heated individual multiwalled carbon nanotubes have been measured with a scanning thermal microscope. The temperature profiles along the tube axis in nanotubes indicate the bulk dissipation of electronic energy to phonons. In addition, thermal conductivity of an individual multiwalled nanotube has been measured using a microfabricated suspended device. The observed thermal conductivity is two orders of magnitude higher than the estimation from previous experiments that used macroscopic mat samples. Finally, we present thermoelectric power (TEP) of individual single walled carbon nanotubes using a novel mesoscopic device. A strong modulation of TEP as a function of the gate electrode was observed.     

Electron transport and hot phonons in carbon nanotubes

We demonstrate the key role of phonon occupation in limiting the high-field ballistic transport in metallic carbon nanotubes. In particular, we provide a simple analytic formula for the electron transport scattering length, which we validate by accurate first principles calculations on (6, 6) and (11, 11) nanotubes. The comparison of our results with the scattering lengths fitted from experimental I-V curves indicates the presence of a nonequilibrium optical phonon heating induced by electron transport. We predict an effective temperature for optical phonons of thousands Kelvin.     

Contact and phonon scattering effects on quantum transport properties of carbon-nanotube field-effect transistors

We investigated the phonon scattering effects on the transport properties of carbon nanotube devices with micron-order lengths at room temperature, using the time-dependent wave-packet approach based on the Kubo formula within a tight-binding approximation. We studied the scattering effects of both the longitudinal acoustic and the optical phonons on the transport properties. The conductance of semiconducting nanotubes is decreased by the acoustic phonon, instead of the optical phonon. Furthermore, we clarified how the electron mobilities of the devices are affected by the acoustic phonon.     

Phonon and electron transport in aluminum thin film: Influence of film thickness on electron and lattice temperatures

Influence of film thickness on non-equilibrium energy transport in the aluminum thin film is examined. The solutions of Boltzmann equation and the modified two-equation model are presented to predict electron and phonon temperatures in the film for various film thicknesses. It is found that electron and phonon temperatures predicted from the Boltzmann equation differ from the solution of two-equation model in the film for small film thickness. As the film thickness increases, this difference becomes negligibly small. Two-equation model predicts higher electron and phonon temperatures than those obtained from the solutions of the Boltzmann equation in the vicinity of the high temperature edge. This becomes opposite in the region of the low temperature edge.     

Low bias electron scattering in structure-identified single wall carbon nanotubes: role of substrate polar phonons

We have performed temperature-dependent electrical transport measurements on known structure single wall carbon nanotubes at low bias. The experiments show a superlinear increase in nanotube resistivity with temperature, which is in contradiction with the linear dependence expected from nanotube acoustic-phonon scattering. The measured electron mean free path is also much lower than expected, especially at medium to high temperatures (>100 K). A theoretical model that includes scattering due to surface polar phonon modes of the substrates reproduces the experiments very well. The role of surface phonons is further confirmed by resistivity measurements of nanotubes on aluminum nitride.     

Phonon spectromicroscopy of carbon nanostructures with atomic resolution

The vibrational properties of single-wall carbon nanotubes have been probed locally with atomic-scale resolution by inelastic electron tunneling spectroscopy with a low-temperature scanning tunneling microscope. The high spatial resolution has allowed the unraveling of changes in the local phonon spectrum related to topological defects. We demonstrated that the radial breathing mode is suppressed within tube segments of lengths below approximately 3 nm, and that in the cap region phonon modes characteristic of the fullerene hemisphere are emerging. Phonon spectromicroscopy should lead to a better understanding of the mechanisms that limit the transport of heat or electrical charge inside nanostructured carbon materials.     

Electron transport through a quantum-dot superlattice

Miniband electron transport through a laterally-confined superlattice is investigated using the balance equation approach. Up to 15 subbands with intraband and interband impurity and phonon scatterings are included. The nonlinear drift velocity and electron temperature, calculated as functions of the applied electric field for systems of varying degrees of confinement, exhibit significant subband effects, and the cross-over from one-dimensional to three-dimensional behavior.     

High-field quasiballistic transport in short carbon nanotubes

Single walled carbon nanotubes with Pd Ohmic contacts and lengths ranging from several microns down to 10 nm are investigated by electron transport experiments and theory. The mean-free path (MFP) for acoustic phonon scattering is estimated to be l(ap) approximately 300 nm, and that for optical phonon scattering is l(op) approximately 15 nm. Transport through very short (approximately 10 nm) nanotubes is free of significant acoustic and optical phonon scattering and thus ballistic and quasiballistic at the low- and high-bias voltage limits, respectively. High currents of up to 70 microA can flow through a short nanotube. Possible mechanisms for the eventual electrical breakdown of short nanotubes at high fields are discussed. The results presented here have important implications to high performance nanotube transistors and interconnects.     

An electrohydrodynamics model for non-equilibrium electron and phonon transport in metal films after ultra-short pulse laser heating

The electrons and phonons in metal films after ultra-short pulse laser heating are in highly non-equilibrium states not only between the electrons and the phonons but also within the electrons. An electrohydrodynamics model consisting of the balance equations of electron density, energy density of electrons, and energy density of phonons is derived from the coupled non-equilibrium electron and phonon Boltzmann transport equations to study the nonlinear thermal transport by considering the electron density fluctuation and the transient electric current in metal films, after ultra-short pulse laser heating. The temperature evolution is calculated by the coupled electron and phonon Boltzmann transport equations, the electrohydrodynamics model derived in this work, and the two-temperature model. Different laser pulse durations, film thicknesses, and laser fluences are considered. We find that the two-temperature model overestimates the electron temperature at the front surface of the film and underestimates the damage threshold when the nonlinear thermal transport of electrons is important. The electrohydrodynamics model proposed in this work could be a more accurate prediction tool to study the non-equilibrium electron and phonon transport process than the two-temperature model and it is much easier to be solved than the Boltzmann transport equations.     

Low-field carrier transport properties in biased bilayer graphene

Based on a semiclassical Boltzmann transport equation in random phase approximation, we develop a theoretical model to understand low-field carrier transport in biased bilayer graphene, which takes into account the charged impurity scattering, acoustic phonon scattering, and surface polar phonon scattering as three main scattering mechanisms. The surface polar optical phonon scattering of carriers in supported bilayer graphene is thoroughly studied using the Rode iteration method. By considering the metal–BLG contact resistance as the only one free fitting parameter, we find that the carrier density dependence of the calculated total conductivity agrees well with that observed in experiment under different temperatures. The conductivity results also suggest that in high carrier density range, the metal–BLG contact resistance can be a significant factor in determining the BLG conductivity at low temperature, and both acoustic phonon scattering and surface polar phonon scattering play important roles at higher temperature, especially for BLG samples with a low doping concentration, which can compete with charged impurity scattering.     

超晶格和层状结构传热特性的连续模型及其在能源材料设计中的应用

层状材料和超晶格结构为提高热电材料和隔热涂层提供了新的设计思路, 并成为最近的研究热点. 应用连续波动方程和线性阻尼理论, 本文研究了此类材料中的声子输运特性. 给出了在整个相空间里的界面调制和声子局域化效应, 得出了超晶格材料热导率的上极限和下极限; 同时, 分析表明界面锐化加强了声子带隙, 使得部分模态的声子局域化加强. 最后, 通过对石墨烯/氮化硼超晶格(G/hBN)和硅/锗超晶格的分子模拟(Si/Ge), 验证了该理论模型. 该方法适用于所有的层状材料和超晶格结构, 对此类新能源材料的设计提供了普适的设计思路.     

Effect of optical phonons scattering on electronic current in metallic carbon nanotubes

The effect of optical phonons scattering on electronic current has been studied in metallic carbon nanotubes. The current has been calculated self-consistently by total voltage equation and the heat transport equation. The total voltage equation consists of three terms, optical phonons collision term, acoustic phonon scattering term, and contact resistance one. Including LO, A₁, and E₁(2) phonons in collision term, we can reproduce the experimental I-V curves displaying negative differential conductance. Furthermore, one conclusion is made that the more optical phonons are scattered by electron, the lower current is in metallic carbon nanotubes. By comparing the current under different conditions, we can make another conclusion that there should be nonequilibrium optical phonons under high bias in spite of whether the metallic nanotube is suspended or not. This result agrees well with the others [M. Lazzeri, F. Mauri, Phys. Rev. B 73 (2006) 165419]. Based on these results, we do not only explain the experiment, but also propose to design a heat-controlling electronic transistor with metallic carbon nanotubes as its channel, in which the electronic current can be controlled by optical phonons.     

Transport theory for quantum crystals

A correlation function approach is developed to treat non-equilibrium phenomena of quantum crystals at low frequency and long wavelength within the renormalized harmonic approximation (RHA). The derivation of the transport equations is carried out by studying the hierarchy of equations of motion for the retarded Green's functions of a pure, nonprimitive, nonionic, anharmonic lattice. Using a factorization technique to take into account the most important terms due to the particle fluctuations and the leading contributions to the hydrodynamic singularities of the phonon self-energy, we find a differential equation for the displacement field and a generalized transport equation for the phonon gas. The microscopic RHA expressions for the local temperature, the local heat density and the energy current are derived; the quasiparticle parameters (elastic constants, generalized Grüneisen parameters, quasiparticle interaction) entering the equations of motion are shown to be consistent with the RHA. In the hydrodynamic regime the general equations are reduced to two coupled differential equations for the lattice deformations and for the local temperature. Then only the displacement-displacement, the displacement-energy density and the energy density-energy density correlation functions show macroscopic fluctuations; for these functions thermodynamical sum-rules are derived.     

考虑界面散射的金属纳米线热导率修正

理论分析了声子和电子输运对Cu, Ag金属纳米线热导率的贡献. 采用镶嵌原子作用势模型描述纳米尺寸下金属原子间的相互作用, 应用平衡分子动力学方法和Green-Kubo函数模拟了金属纳米线的声子热导率; 采用玻尔兹曼输运理论和Wiedemann-Franz定律计算电子热导率; 并通过散射失配模型和Mayadas-Shatzkes模型引入晶界散射的影响. 在此基础上, 考察分析了纳米线尺度和温度的影响. 研究结果表明: Cu, Ag纳米线热导率的变化规律相似; 电子输运对金属纳米线的导热占主导地位, 而声子热导率的贡献也不容忽视; 晶界散射导致热导率减小, 尤其对电子热导率作用显著; 纳米线总热导率随着温度的升高而降低; 随着截面尺寸减小而减小, 但声子热导率所占份额有所增加. 关键词： 纳米线 热导率 表面散射 晶界散射     

Spin-dependent thermoelectric effect in polaronic Kondo transport through a Rashba quantum dot coupled with ferromagnetic leads

We investigate the spin-dependent thermoelectric effect of a Rashba molecular quantum dot coupled with both ferromagnetic leads and a phonon bath in the Kondo regime. A transport formula is derived to deal with the strong electron–electron and electron–phonon interaction with the spin–orbit coupling of arbitrary intensity simultaneously. The numerical results show that only strengthening the electron–phonon coupling can improve the charge thermopower, while even very small spin–orbit coupling can suppress both the thermocharge figure of merit and the thermospin one at the Kondo temperature greatly. It is also found that the electron–phonon coupling in conjunction with the spin–orbit coupling can rebuild Fermi liquid state in the Kondo regime.     

Stochastic method for in-situ damage analysis

We are going to apply dissipative energy method, considered as perturbation method, in order to investigate the effects of electron-optical phonon coupling on the electronic transport of armchair single wall carbon nanotubes. This method almost deals with the modeling of the behavior of electrons near ballistic regime. The results of calculations indicate that this model can be applied in estimating the current and the differential conductance of the armchair single-wall carbon nanotubes at low bias; however the perturbation method fails to reproduce the current and differential conductance at high voltages. Furthermore, this approach suggests a method that the observation of phonon energy modes involved in electron-phonon coupling becomes possible experimentally at low temperature.     

Carrier transport in Bi2Se3 topological insulator slab

Electron transport in Bi₂Se₃ topological insulator slabs is investigated in the thermal activation regime (>50 K) both in the absence (ballistic) and presence of weak and strong acoustic phonon scattering using the non-equilibrium Green function approach. Resistance of the slab is simulated as a function of temperature for a range of slab thicknesses and effective doping in order to gain a handle on how various factors interact and compete to determine the overall resistance of the slab. If the Bi₂Se₃ slab is biased at the Dirac point, resistance is found to display an insulating trend even for strong electron–phonon coupling strength. However, when the Fermi-level lies close to the bulk conduction band (heavy electron doping), phonon scattering can dominate and result in a metallic behavior, although the insulating trend is retained in the limit of ballistic transport. Depending on values of the operating parameters, the temperature dependence of the slab is found to exhibit a remarkably complex behavior, which ranges from insulating to metallic, and includes cases where the resistance exhibits a local maximum, much like the contradictory behaviors seen experimentally in various experiments.     

Size effect on phonon transport in two-dimensional silicon film

Phonon transport in two-dimensional silicon film is investigated and frequency dependent Boltzmann transport equation is solved numerically using discrete ordinate method. The transient effects of phonon transport in the film are incorporated in the analysis. The influence of film size on phonon transport is examined through equivalent equilibrium temperature in the film. It is found that increasing film thickness enhances phonon scattering and dispersion in the film while increasing equivalent equilibrium temperature. The rate of equivalent equilibrium temperature increase is high in the early heating period ( \(\hbox {t} \le 50\,\hbox {ps}\) ) and the rate of temperature increase becomes gradual in the film as the heating period progresses.