Phase and electrical behaviour in the Bi14W1 − xLaxO24 − 3x/2 system

The compositional and thermal dependencies of phase and electrical behaviour of compositions in the system Bi₁₄W_1 − xLa_xO_{24 − 3x/2} (0.00 < x < 1.00) have been studied by X-ray powder diffraction, differential thermal analysis and a.c. impedance spectroscopy. The system exhibits polymorphism and phase separation, which shows both compositional and thermal dependence. Compositions with x = 0.25 and x = 0.50 exhibit a single phase tetragonal structure at room temperature. In contrast, the x = 0.75 composition at room temperature shows a mixture of a cubic phase and a secondary β-Bi₂O₃ related tetragonal phase. A full solid solution is observed at high temperatures, corresponding to the occurrence of a δ-Bi₂O₃ type phase. The appearance of the various phases correlates well with the observed electrical behaviour. The x = 0.75 composition exhibits exceptionally high conductivity at high temperatures (σ₈₀₀ = 1.34 S cm^− 1), but also shows significant phase separation at lower temperatures.     

Structural,thermal and electrical properties of the semiconductor system Ag(1−x)CuxInSe2

This paper presents a study of bulk samples synthesized of the Ag_1−xCu_xInSe₂ semiconductor system. Structural, thermal and electrical properties, as a function of the nominal composition (Cu content) x=0.0, 0.2, 0.4, 0.6, 0.8, and 1.0 were studied. The influence of x on parameters such as melting temperature, solid phase transition temperature, lattice parameters, bond lengths, crystallite size t (coherent domain), electrical resistivity, electrical mobility and majority carrier concentration was analyzed. The electrical parameters are analyzed at room temperature. In general, it is observed that the properties of the Ag_1−xCu_xInSe₂ system for x≤0.4 are dominated by n-AgInSe₂, while for x>0.4, these are in the domain of p-CuInSe₂. The crystallite size t in the whole composition range (x) is of the order of the nanoparticles. Secondary phases (CuSe, Ag₂Se and InSe) in small proportion were identified by XRD and DTA.     

Structural and electrical impedance study of Pb(Sr1/3Nb2/3)O3

Lead-based ceramic Pb(Sr_1/3Nb_2/3)O₃ (PSN) is prepared by the columbite precursor method and structurally characterized using XRD. The X-ray diffraction shows a perovskite structure with cubic pyrochlore phase. Detailed studies of ε′ and ε″ of the compounds show that the compounds exhibit dielectric anomaly. Impedance spectroscopy is used to characterize the electrical behaviour. Results indicate that the relaxation mechanism of the material is temperature dependent and has dominant bulk contribution in different temperature ranges. Modulus spectroscopic data were used to gain an insight into the electrical properties of the samples and with a view to observe the relaxations in them. Frequency dependence dielectric permittivity shows typical Debye-type dielectric dispersion. Temperature-dependent DC resistivity shows that resistance decreases with the increase in temperature and follows Arrhenius behaviour in different temperature regions.     

Optical and electrical properties of thermally evaporated In49Se48Sn3 films

Nearly stoichiometric thin films of In₄₉Se₄₈Sn₃ were deposited at room temperature, by conventional thermal evaporation of the presynthesized materials, onto precleaned glass substrates. The microstructural studies on the as-deposited and annealed films, using transmission electron microscopy and diffraction (TEMD), revealed that the as-deposited films are amorphous in nature, while those annealed at 498 K are crystalline. The optical properties of the investigated films were determined from the transmittance and reflectance data, in the spectral range 650-2500 nm. An analysis of the optical absorption spectra revealed a non-direct energy gap characterizing the amorphous films, while both allowed and forbidden direct energy gaps characterized the crystalline films. The electrical resistance of the deposited films was carried out during heating and cooling cycles in the temperature range 300-600 K. The results show an irreproducible behavior, while after crystallization the results become reproducible. The analysis of the temperature dependence of the resistance (ln(R) vs. 1000/T) for crystalline films shows two straight lines corresponding to both extrinsic and intrinsic conduction. The room temperature I-V characteristics of the as-deposited films sandwiched between similar Ag metal electrodes shows an ohmic behavior, while non-ohmic behavior attributed to space charge limited conduction has been observed when the films are sandwiched between dissimilar Ag/Al metal electrodes.     

Effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory

The effects of Si doping on the structural and electrical properties of Ge₂Sb₂Te₅ film are studied in detail. Electrical properties and thermal stability can be improved by doping small amount of Si in the Ge₂Sb₂Te₅ film. The addition of Si in the Ge₂Sb₂Te₅ film results in the increase of both crystallization temperature and phase-transition temperature from face-centered cubic (fcc) phase to hexagonal (hex) phase, however, decreases the melting point slightly. The crystallization activation energy reaches a maximum at 4.1 at.% and then decreases with increasing dopant concentration. The electrical conduction activation energy increases with the dopant concentration, which may be attributed to the increase of strong covalent bonds in the film. The resistivity of Ge₂Sb₂Te₅ film shows a significant increase with Si doping. When doping 11.8 at.% of Si in the film, the resistivity after 460 °C annealing increases from 1 to 11 mΩ cm compared to the undoped Ge₂Sb₂Te₅ film. Current-voltage (I-V) characteristics show Si doping may increase the dynamic resistance, which is helpful to writing current reduction of phase-change random access memory.     

Solid immiscibility and liquid structure in the Ga2(SexTe1−x)3 alloy system

Differential thermal analysis and X-ray diffraction studies of the system Ga₂(Se_xTe_1?x)₃ are reported and correlated with measurements of the electrical conductivity in the liquid state. The experiments reveal that Ga₂Te₃ and Ga₂Se₃ do not form a continuous series of pseudo-binary solid solutions but exhibit solid state immiscibility in the range 0.50 ? x ? 0.90. The composition dependence of the conductivity of the liquid alloys exhibits structure in the range of the solid state phase separation. Such “memory” in the liquid of a solid phase separation has not been reported previously and suggests the importance of concentration fluctuations in determining the electronic properties of the liquid alloys.     

Pulsed Heating of Carbides

Experimental studies of carbides are briefly reviewed. The high-temperature properties of carbides used in nuclear power and aerospace engineering are considered. Temperature is measured from either plane surface emittance or the emittance of thin samples prepared in the form of a melting blackbody model. The following quantities are measured: Joule energy, heat capacity (predominantly С_p), electrical resistance, and phase-transition heat versus temperature (up to 5000 K). The pre-melting heat capacity exceeds the equilibrium value, but temperatures measured at the characteristic points of the phase diagram correspond to the design diagram.     

Effect of the simultaneous substitution of two transition metals on the structural, magnetic and electrical properties of La0.6Sr0.4Mn1−2xCrxFexO3

The structural, magnetic and electrical properties of Cr and Fe simultaneously substituted in the perovskite La_0.6Sr_0.4Mn_1−2xCr_xFe_xO₃ have been studied. The presence of Cr and Fe had no significant effect on the structural properties. Curie temperature and saturation magnetization decrease with increase in Cr and Fe contents. For x=0.20 and 0.25, a steep drop of zero field-cooled (ZFC) magnetization at low temperature signifies the formation of cluster- or spin-glass state. A weak hysteresis at low fields seems to be an indication of phase separation. All the resulting magnetization curves can be explained by a superposition of both ferromagnetic and antiferromagnetic components. All the samples are semiconducting throughout the temperature range studied. Resistivity can be described by the adiabatic small polaron hopping and the variable range hopping model. It was found that the transport mechanism is dominated by the VRH model with an increase of Mott localization energy, which explains the increase of resistivity.     

Transport coefficients and defect structure of Sb2−xAgxTe3 single crystals

Incorporation of Ag in the crystal lattice of Sb₂Te₃ creates structural defects that have a strong influence on the transport properties. Single crystals of Sb_2−xAg_xTe₃ (x=0.0; 0.014; 0.018 and 0.022) were characterized by measurements of the temperature dependence of the electrical resistivity, Hall coefficient, Seebeck coefficient and thermal conductivity in the temperature range of 5-300 K. With an increasing content of Ag the electrical resistance, the Hall coefficient and the Seebeck coefficient all decrease. This implies that the incorporation of Ag atoms in the Sb₂Te₃ crystal structure results in an increasing concentration of holes. However, the doping efficiency of Ag appears to be only about 50% of the expected value. We explain this discrepancy by a model based on the interaction of Ag impurity with the native defects in the Sb_2−xAg_xTe₃ crystal lattice. Defects have a particularly strong influence on the thermal conductivity. We analyze the temperature dependence of the lattice thermal conductivity in the context of the Debye model. Of the various phonon scattering contributions, the dominant influence of Ag incorporation in the crystal lattice of Sb₂Te₃ is revealed to be point-defect scattering where both the mass defect and elastic strain play a pivotal role.     

Detection of structural and magnetic transitions in La0.67Ba0.23Ca0.1MnO3 using the rf resonance technique

We report radio-frequency (rf) electrodynamics in polycrystalline La_0.67Ba_0.23Ca_0.1MnO₃ as a function of temperature and magnetic field using a home-built LC resonant circuit powered by an integrated chip oscillator. The resonance frequency (f_r) of the oscillator and the power (P) absorbed by the sample are measured simultaneously. The paramagnetic to ferromagnetic phase transition in the absence of an external magnetic field is accompanied by a rapid decrease in both P and f_r around the Curie temperature T_C=300 K. However, much below T_C, the f_r shows a step-like anomaly around 165 K (195 K) while cooling (warming), which we attribute to a structural phase transition from high temperature rhombohedral () to low temperature orthorhombic (Imma) phase. The step-like anomaly in f_r versus T disappears in a field of 300 G. Fractional changes as large as 19% in Δf_r/f_r and 10% in ΔP/P are observed under H=1 kG around T_C. Our study suggests that the rf resonance technique is a versatile tool to study the magnetization dynamics as well as to investigate the structural phase transition in manganites.     

A study of the conduction mechanism of single crystal Li0.5Fe2.5O4 through the transition points

The differential thermal analysis, electrical resistivity and thermopower are studied as a function of temperature in the range 300–1100 K. The measurements show two transition points at 905 and 1030 K. The first point is linked with the magnetic transition at the Néel temperature (T_N), and the second with the order-disorder phase. The conduction mechanism through the Néel point is discussed using the spin polaron model.     

Effects of composition on phase structure and electrical properties of (K0.5Na0.5)0.90Li0.06Sr0.02Nb(1−x)SbxO3 ceramics

Lead-free (K_0.5Na_0.5)_0.90Li_0.06Sr_0.02Nb_(1−x)Sb_xO₃ (KNLSN-Sb_x) ceramics were synthesized by ordinary sintering technique. The compositional dependence of phase structure and electrical properties of the ceramics was systematically investigated. All samples possessed pure perovskite structure, showing room temperature symmetries of orthorhombic at x<0.01, coexistence of orthorhombic and tetragonal phases at x=0.01, and tetragonal at 0.02≤x≤0.05. The temperature of the polymorphic phase transition (PPT) was shifted to lower temperature and dielectric relaxor behavior was induced by increasing Sb content. The samples near the coexistence region (x=0.01) exhibited enhanced electrical properties: d₃₃∼145 pC/N, k_p∼38% and P_r∼20.4 μC/cm².     

Magnetic and transport properties in Sr1−xLaxFe1−xMnxO3

The magnetic and transport properties in the perovskite Sr_1−xLa_xFe_1−xMn_xO₃ have been explored. As x rises, the systemic ferromagnetism increases gradually and cluster-spin-glass state occurs in the low-temperature region. For 0.3?x?0.7, the ferromagnetic phase separation from the paramagnetic phase was observed from the results of electron-spin-resonance measurement. Although all samples show a semiconducting behavior, their transport properties are dominated by two different mechanisms, namely, the electronic transport of x?0.5 samples is realized by thermal activation but the variable-range hopping is applied in x?0.7 ones. The different transport mechanism can be understood from the Mn/Fe ions interaction.     

Modification of the electrical properties in Fe-Al2O3 granular thin films due to increased bias potential

We studied the electrical properties in Fe-Al₂O₃ granular films when the injected direct current or bias potential are varied in the low-field regime (eΔV?k_BT). Measurements of the electrical resistance as a function of temperature and applied bias at different temperatures were performed. We found that the electrical properties are best described using variable range hopping. The variation in resistance showed unexpected characteristics in distinct regions of potential. These regions of potential could be due to modification of the electronic localization length. We have shown that the electrical resistance decreases when the applied bias and/or current increases. We associate this behavior of the resistance with the activation of new electronic paths. The total resistance of our samples is reduced as additional parallel electronic paths are formed.     

Effect of Cr doping on the magnetic and electrical transport properties of charge-ordered Bi0.5Ca0.5MnO3

An experimental study on the magnetic and electrical transport properties of the manganites Bi_0.5Ca_0.5Mn_1−xCr_xO₃ (BCMCO) (0≤x≤0.12) is carried out. The results show that Cr doping can suppress the charge-ordering transition, favoring the ferromagnetic clusters. For x=0.12, the charge-ordering transition disappears but a very broad paramagnetic-ferromagnetic-like transition is detected at the Curie temperature T_C=72.6 K. It is caused by phase separation or coexistence of the charge-ordering and ferromagnetic phase. Moreover, the critical Cr content to destroy charge ordering phase in BCMCO does not match the general monotonous tendencies shown by Cr-doped Re_0.5Ca_0.5MnO₃ (Re-rare-earth). These differences are ascribed to the fact that the ground state in BCMCO differs markedly from the ferromagnetic metallic phase in Cr-doped Re_0.5Ca_0.5MnO₃ compounds.     

Influence of Ce doping on electrical and thermal properties of La0.7−xCexCa0.3MnO3 (0.0≤x≤0.7) manganites

The effect of Ce-doping on structural, magnetic, electrical and thermal transport properties in hole-doped manganites La_0.7−xCe_xCa_0.3MnO₃ (0.0≤x≤0.7) is investigated. The structure of the compounds was found to be crystallized into orthorhombically distorted perovskite structure. dc Susceptibility versus temperature curves reveal various magnetic transitions. For x≤0.3, ferromagnetic regions (FM) were identified and the magnetic transition temperature (T_C) was found to be decreasing systematically with increasing Ce concentration. The electrical resistivity ρ(T) separates the well-define metal-semiconducting transition (T_MS) for low Ce doping concentrations (0.0≤x≤0.3) consistent with magnetic transitions. For the samples with 0.4≤x≤0.7, ρ(T) curves display a semiconducting behavior in both the high temperature paramagnetic (PM) phase and low temperature FM or antiferromagnetic phase. The electron–phonon and electron–electron scattering processes govern the low temperature metallic behavior, whereas small polaron hopping model is found to be operative in PM phases for all samples. These results were broadly corroborated by thermal transport measurements for metallic samples (x≤0.3) in entire temperature range we investigated. The complicated temperature dependence of Seebeck coefficient (S) is an indication of electron–magnon scattering in the low temperature magnetically ordered regime. Specific heat measurements depict a broadened hump in the vicinity of T_C, indicating the existence of magnetic ordering and magnetic inhomogeneity in the samples. The observation of a significant difference between ρ(T) and S(T) activation energies and a positive slope in thermal conductivity κ(T) implying that the conduction of charge carriers were dominated by small polaron in PM state of these manganites.     

Microstructure and piezoelectric properties of Bi0.5(Na0.82K0.18)0.5TiO3−NaSbO3 ceramics

Lead-free piezoelectric ceramics (1−x)Bi_0.5(Na_0.82K_0.18)_0.5TiO₃−xNaSbO₃ have been prepared by a conventional ceramics technique, and their microstructure and electrical properties have been investigated. The addition of NaSbO₃ has no remarkable effect on the crystal structure within the studied doping content; however, an obvious change in microstructure took place. With increase in NaSbO₃ content, the temperature from a ferroelectric to antiferroelectric phase transition increases, and the temperature for a transition from antiferroelectric phases to paraelectric phases changes insignificantly. Simultaneously, the temperature range between the rhombohedral phase transition point and the Curie temperature point becomes smaller. The piezoelectric properties significantly increase with increase in NaSbO₃ content and the piezoelectric constant and electromechanical coupling factor attain maximum values of d₃₃=160 pC/N and k_p=0.333 at x=0.01. The results indicate that (1−x)Bi_0.5(Na_0.82K_0.18)_0.5TiO₃−xNaSbO₃ ceramic is a promising lead-free piezoelectric candidate material.     

Effect of temperature on the electrical properties of (WO3·Co2O3) composite

The composite with the mole ratio of WO₃ to Co₂O₃ being 3:1 was fabricated by the conventional solid-state reaction process. The electrical properties of the sample were measured at various ambient temperatures in a low electric field (E<200 V/mm). The results demonstrated that the electrical behavior of the composite was sensitive to the variation of the ambient temperature. As the temperature increased, the composite displayed negative differential resistance characteristic within the temperature range of about 50-130 °C. When the temperature was between 140 and 300 °C the composite exhibited sublinear electrical behavior where current rose more weakly than voltage, which is sharply unlike those in varistors. An obviously superlinear property, exploited in varistors, was observed at the temperature of 500 °C. The present results also suggested that the composite did not obey the Arrhenius law. The current-voltage (I-V) properties of the composite could be explained by the double p-n junction and Joule heat.     

Electronic transport properties of stuffed compositions of ferromagnetic copper chromium telluride: Cu1+xCr2Te4 (x=0-1)

We present here a detailed study of electronic transport properties of the metallic-ferromagnetic compounds Cu_1+xCr₂Te₄, having excess Cu atoms with x=0-1, from 2 to 400 K. The stuffing of the copper atoms in the parent structure reduces the ferromagnetic ordering temperature T_C from 325 to 156 K, while for the entire range the dependence of the electrical resistance and the thermopower with temperature and the anomalies in them on the magnetic ordering remain similar. All the compounds show a magnon-drag contribution in thermopower as a positive maximum around T_C/3, and a T² - dependence of resistivity at low temperatures. The increasing effects of the short range magnetic ordering in the paramagnetic resistivity are seen with the increase in the stuffing of atoms in these compounds. The transport properties are explained by the current carriers —the holes in a wide energy band dominated by the p-state of Te-atoms, which are scattered by the spindisorder in the paramagnetic phase and from the magnons in the ferromagnetic phase.     

Thermoelectric properties of SnzCo8Sb24 skutterudites

Sn-filled CoSb₃ skutterudite compounds were synthesized by the induction melting process. Formation of a single δ-phase of the synthesized materials was confirmed by X-ray diffraction analysis. The temperature dependences of the Seebeck coefficient, electrical resistivity and thermal conductivity were examined in the temperature range of 300-700 K. Positive Seebeck and Hall coefficients confirmed p-type conductivity. Electrical resistivity increased with increasing temperature, which shows that the Sn-filled CoSb₃ skutterudite is a degenerate semiconductor. The thermal conductivity was reduced by Sn-filling because the filler atoms acted as phonon scattering centers in the skutterudite lattice. The lowest thermal conductivity was achieved in the composition of Sn_0.25Co₈Sb₂₄.