Magnetic phase diagram of double-layered La2−2xCa1+2xMn2O7 manganite

Double-layered manganite La_2−2xCa_1+2xMn₂O₇ have been synthesized for compositions ‘x’=0.0, 0.1, 0.2, 0.3, 0.4 and 0.5 by solid state reaction method. From X-ray diffraction study, their crystal structures were found to be tetragonal perovskite with lattice parameters decreasing with increasing ‘x’. The decreasing lattice parameters affect the balance between in-plane, intra-bilayer and inter-bilayer exchange interactions, which is reflected on magnetotransport properties. The metal-to-insulator transition temperature is found to vary with composition and peaked around ‘x’=0.3. From ac-susceptibility study, 2D-ferromagnetic ordering was observed at higher temperatures for all compositions whereas 3D-ferromagnetic ordering was observed at quite low temperatures. In low-temperature region, decreasing susceptibility shows antiferromagnetic state for all compositions. On the basis of electrical and magnetic properties, a magnetic phase diagram is given.     

The effect of Ag substitution in the mixed conductor Cu7PSe6

Cu₇PSe₆ is a mixed conductor that crystallizes in the simple cubic structure at room temperature. Structural transitions above and below room temperature are accompanied by step-like changes in electrical conductivity. The substitution of Ag⁺ for Cu⁺ in Cu₇PSe₆ stabilized the simple cubic structure over a wider range of temperatures than is observed for the pure compound. A disproportionate decrease in electrical conductivity accompanies modest levels of silver substitution. The prominent step in electrical conductivity associated with the low-temperature crystallographic phase transition disappears in (Ag_xCu_1−x)₇PSe₆ solid solutions for a composition parameter x=0.20, replaced by two distinct changes in the slope of conductivity below room temperature.     

Structure and magnetic properties of Ca1−x−yMgxCu2+yO3 influenced by isoelectronic substitution x

Phases of the composition Ca_1−x−yMg_xCu_2+yO₃ have been prepared for the first time. The compounds are isostructural with the known end-members CaCu₂O₃ and MgCu₂O₃ showing a two-leg spin-ladder-like connection of copper and oxygen atoms within the Cu₂O₃-layer. Opposite the spin ladders this layer is folded, which results in a long-range antiferromagnetic ordering of these phases. The Néel temperature can be adapted by variation of x in Ca_1−x−yMg_xCu_2+yO₃ between 24 and 80 K. Several structural features, which influence the magnetic ordering, are discussed.     

Transport coefficients and defect structure of Sb2−xAgxTe3 single crystals

Incorporation of Ag in the crystal lattice of Sb₂Te₃ creates structural defects that have a strong influence on the transport properties. Single crystals of Sb_2−xAg_xTe₃ (x=0.0; 0.014; 0.018 and 0.022) were characterized by measurements of the temperature dependence of the electrical resistivity, Hall coefficient, Seebeck coefficient and thermal conductivity in the temperature range of 5-300 K. With an increasing content of Ag the electrical resistance, the Hall coefficient and the Seebeck coefficient all decrease. This implies that the incorporation of Ag atoms in the Sb₂Te₃ crystal structure results in an increasing concentration of holes. However, the doping efficiency of Ag appears to be only about 50% of the expected value. We explain this discrepancy by a model based on the interaction of Ag impurity with the native defects in the Sb_2−xAg_xTe₃ crystal lattice. Defects have a particularly strong influence on the thermal conductivity. We analyze the temperature dependence of the lattice thermal conductivity in the context of the Debye model. Of the various phonon scattering contributions, the dominant influence of Ag incorporation in the crystal lattice of Sb₂Te₃ is revealed to be point-defect scattering where both the mass defect and elastic strain play a pivotal role.     

Compositional behaviour of Urbach absorption edge and exciton-phonon interaction parameters in Cu6PS5I1−xBrx superionic mixed crystals

Temperature behaviour of optical absorption edge in Cu₆PS₅I_1−xBr_x mixed crystals is studied in the interval 77-325 K. It is shown that the absorption edge has Urbach shape in the 215-325 K temperature interval. The influence of temperature and compositional disorder on the Urbach absorption edge parameters is presented. The mechanism of the Urbach bundle formation and the effect of I→Br anionic substitution on the exciton-phonon interaction parameters is elucidated.     

Magnetic properties for the Cu2MnSnSe4 and Cu2FeSnSe4 compounds

Magnetic susceptibility χ measurements in the range from 2 to 300 K were carried out on samples of the Cu₂FeSnSe₄ and Cu₂MnSnSe₄ compounds. It was found that Cu₂FeSnSe₄ was antiferromagnetic showing ideal Curie-Weiss behavior with a Néel temperature T_N of about 19 K and Curie-Weiss temperature θ=−200 K, while for Cu₂MnSnSe₄ the behavior was spin-glass with a freezing temperature T_f of about 22 K and Curie-Weiss temperature θ=−25 K. The spin-glass order parameter q(T), determined from the susceptibility data, was found to be in agreement with the prediction of conventional spin-glass theory.     

Electrical and optical absorption studies of Cu7GeS5I fast-ion conductor

Electrical conductivity and fundamental absorption spectra of monocrystalline Cu₇GeS₅I were measured in the temperature ranges 95-370 and 77-373 K, respectively. A rather high electrical conductivity (σ_t=6.98×10⁻³Ω⁻¹ cm⁻¹ at 300 K) and low activation energy (ΔE_a=0.183 eV) was found. The influence of different types of disordering on the Urbach absorption edge and electron-phonon interaction parameters were calculated, discussed and compared with the same parameters in Cu₇GeS₅I, Cu₆PX₅I (X=S,Se) and Ag₇GeX₅I (X=S,Se) compounds. We have concluded that the P→Ge and Cu→Ag cation substitution results in an increase of the electrical conductivity and a decrease of the activation energy. Besides, P→Ge substitution, results in complete smearing and disappearance of the exciton absorption bands and in blue shift of the Urbach absorption edge, an increase of the edge energy width and an electron-phonon-interaction enhancement.     

Spectroscopic studies of thermal treatment effect on the composition and size of CdS1−xSex nanocrystals in borosilicate glass

The effect of heat treatment parameters on the chemical composition and average size of CdS_1−xSe_x nanocrystals obtained in borosilicate glass by diffusion-limited growth is studied by optical absorption and Raman scattering spectroscopy. An increase of selenium content from 0.75 to 0.83 in the nanocrystals with the heat treatment temperature and duration is observed. Three lowest-energy optical transitions in CdS_1−xSe_x nanocrystals are assigned to corresponding electronic transitions based on the observed dependence of the confinement-related absorption maxima on the nanocrystal size.     

The influence of microscopic parameters on the ionic conductivity of SrBi2(Nb1−xVx)2O9−δ(0≤x≤0.3) ceramics

Layered SrBi₂(Nb_1−xV_x)₂O_9−δ (SBVN) ceramics with x lying in the range 0-0.3 (30 mol%) were fabricated by the conventional sintering technique. The microstructural studies confirmed the truncating effect of V₂O₅ on the abnormal platy growth of SBN grains. The electrical conductivity studies were centred in the 573-823 K as the Curie temperature lies in this range. The concentration of mobile charge carriers (n), the diffusion constant (D₀) and the mean free path (a) were calculated by using Rice and Roth formalism. The conductivity parameters such as ion-hopping rate (ω_p) and the charge carrier concentration (K′) term have been calculated using Almond and West formalism. The aforementioned microscopic parameters were found to be V₂O₅ content dependent on SrBi₂(Nb_1−xV_x)₂O_9−δ ceramics.     

Crystal structure, electronic and transport properties of AgSbSe2 and AgSbTe2

Undoped and p- and n-doped AgSbX₂ (X=Se and Te) materials were synthesized by direct fusion technique. The structural properties were investigated by X-ray diffraction and SEM microscopy. The electrical conductivity, thermal conductivity and Seebeck coefficient have been measured as a function of temperature in the range from 300 to 600 K.To enlighten electron transport behaviours observed in AgSbSe₂ and AgSbTe₂ compounds, electronic structure calculations have been performed by the Korringa-Kohn-Rostoker method as well as KKR with coherent potential approximation (KKR-CPA) for ordered (hypothetical AgX and SbX as well as AgSbX₂ approximates) and disordered systems (Ag_1−xSb_xX), respectively. The calculated density of states in the considered structural cases shows apparent tendencies to opening the energy gap near the Fermi level for the stoichiometric AgSbX₂ compositions, but a small overlap between valence and conduction bands is still present. Such electronic structure behaviour well agrees with the semimetallic properties of the analyzed samples.     

Electronic transport and magnetic studies of La1−xCax−0.08Sr0.04Ba0.04MnO3

Lanthanum based mixed valence manganite system La_1−xCa_x−0.08Sr_0.04Ba_0.04MnO₃ (LCSBMO; x=0.15, 0.24 and 0.33) synthesized through the sol-gel route is systematically investigated in this paper. The electronic transport and magnetic susceptibility properties are analyzed and compared, apart from the study of unit cell structure, microstructure and composition. Second order phase transition is observed in all the samples and significant difference is observed between the insulator to metal transition temperature (T_MI) and paramagnetic (PM) to ferromagnetic (FM) transition temperature (T_C). In contrast to the insulating FM behaviour usually observed in La_1−xCa_xMnO₃ (LCMO) for x=0.15, a clear insulator to metal transition is observed for LCSBMO for the same percentage of lanthanum. The temperature dependent resistivity of polycrystalline pellets, when obeying the well studied law ρ=ρ_o+ρ₂T² for T<T_MI, is observed to differ significantly in the values of ρ_o and ρ₂, with the electrical conductivity increasing with x. The variable range hopping model has been found to fit resistivity data better than the small polaron model for T>T_MI. AC magnetic susceptibility study of the polycrystalline powders of the manganite system shows the highest PM to FM transition of 285 K for x=0.33.     

Microstructure and piezoelectric properties of Bi0.5(Na0.82K0.18)0.5TiO3−NaSbO3 ceramics

Lead-free piezoelectric ceramics (1−x)Bi_0.5(Na_0.82K_0.18)_0.5TiO₃−xNaSbO₃ have been prepared by a conventional ceramics technique, and their microstructure and electrical properties have been investigated. The addition of NaSbO₃ has no remarkable effect on the crystal structure within the studied doping content; however, an obvious change in microstructure took place. With increase in NaSbO₃ content, the temperature from a ferroelectric to antiferroelectric phase transition increases, and the temperature for a transition from antiferroelectric phases to paraelectric phases changes insignificantly. Simultaneously, the temperature range between the rhombohedral phase transition point and the Curie temperature point becomes smaller. The piezoelectric properties significantly increase with increase in NaSbO₃ content and the piezoelectric constant and electromechanical coupling factor attain maximum values of d₃₃=160 pC/N and k_p=0.333 at x=0.01. The results indicate that (1−x)Bi_0.5(Na_0.82K_0.18)_0.5TiO₃−xNaSbO₃ ceramic is a promising lead-free piezoelectric candidate material.     

XRD, microstructural and EPR susceptibility characterization of combustion synthesized nanoscale Mg1−xNixO solid solutions

The lattice parameter a(x) of the stoichiometric Mg_1−xNi_xO (0?x?1) solid solutions prepared by urea-based combustion synthesis with fuel to oxidizer ratio (ψ=1) was determined by X-ray diffraction. It was found that the dependence of the lattice parameter a(x) on the composition deviated more from the linear Vegard's model (VM) when compared to Kuzmin-Mironova (KM) model. a(x) in the Mg_1−xNi_xO system differs nontrivially from the predictions of both VM and KM models. For x=0.4 (Mg_0.6Ni_0.4O), the maximum deviation was about 2 and 1.7 pm, respectively. The increase in the intensity of (1 1 1) peak in XRD with increase of nickel concentration confirms that the substitution induces changes at the unit cell level. Nelson-Riley function (NRF) and Williamson-Hall plots are used to calculate micro strain in the solid solution. This analysis indicates that the micro strain is maximum for the compositions 60-40 (Mg_0.6Ni_0.4O), 50-50 (Mg_0.5Ni_0.5O) and 40-60 (Mg_0.4Ni_0.6O). The crystallite size was estimated using Williamson-Hall plot. We conclude that almost similar sized crystallite is formed in all the compositions studied. Porosity determined using XRD increases with a raise in the nickel concentration. The SEM morphology provides corroborative evidence. EPR susceptibilities of solid solution Mg_1−xNi_xO are determined at room temperature. Variable temperature of EPR allowed to check the Curie-Weiss law for solid solution. The linearity of C_M(x) and Θ(x) with concentration of nickel has ruled out chemical clustering in the samples.     

Reactive sputtering: A method to modify the metallic ratio in the novel silver-copper oxides

Composite silver-copper targets were sputtered for the first time in various reactive Ar-O₂ mixtures to deposit the novel silver-copper oxides on glass substrates. The effect of two deposition parameters (oxygen flow rate and target composition) on the films structure was investigated. Depending on these two deposition parameters, three types of silver-copper oxides were synthesised using the reactive sputtering process: Ag_xCu_2−xO, Ag_xCu_4−xO₃ and Ag_1−xCu_1+xO₂. Although conventional processes led to the formation of silver-copper oxides with stoichiometric Cu/Ag atomic ratio, it was demonstrated that the reactive sputtering process was suitable to modify this ratio in the deposited films. Finally, the optical and electrical properties of the silver-copper oxides were investigated and compared to that of copper oxides exhibiting similar structures.     

Electrical conduction and magnetoelectric effect of (x) BaTiO3 + (1−x) Ni0.92Co0.03Cu0.05Fe2O4 composites in ferroelectric rich region

Particulate composites with composition (x)BaTiO₃+(1−x)Ni_0.92Co_0.03Cu_0.05Fe₂O₄ in which x varies as 1, 0.85, 0.70, 0.55 and 0 (in mol%) were prepared by the conventional double sintering ceramic technique. The presence of two phases viz. ferromagnetic (Ni_0.92Co_0.03Cu_0.05Fe₂O₄) and ferroelectric (BaTiO₃) was confirmed by X-ray diffraction analysis. The dc resistivity and thermo-emf measurements were carried out with variation of temperature. The ac conductivity (σ_ac) measurements investigated in the frequency range 100 Hz to 1 MHz conclude that the conduction in these composites is due to small polarons. The variation of dielectric constant and loss tangent with frequency (20 Hz to 1 MHz) was studied. The static magnetoelectric conversion factor, i.e. dc (dE/dH)_H was measured as a function of intensity of applied magnetic field. The changes were observed in electrical properties as well as in magnetoelectric voltage coefficient as the molar ratio of the constituent phases was varied. A maximum value of magnetoelectric conversion factor of 536.06 μV/cm Oe was observed for the composite with 70% BaTiO₃+30% Ni_0.92Co_0.03Cu_0.05Fe₂O₄ at a dc magnetic field of 2.3 K Oe. The maximum magnetoelectric conversion output has been explained in terms of ferrite-ferroelectric content, applied static magnetic field and resistivity.     

Thermoelectric performance of ternary Bi-Sb-Ag alloys prepared by mechanical alloying and subsequent pressureless sintering

The alloys with the general formula of Bi₈₅Sb_15−xAg_x (x=0, 1, 3, 5, 7) were prepared by mechanical alloying and subsequent pressureless sintering (Bi₈₅Sb₁₅ alloy was used for comparison). Their transport properties involving electrical conductivity, Seebeck coefficient, and thermal conductivity had been investigated in the temperature range of 80-300 K. The maximum absolute value of Seebeck coefficient (120 μV/K) was found at 160 K in the alloy Bi₈₅Sb_15−xAg_x (x=3). The figure-of-merit of alloy Bi₈₅Sb_15−xAg_x (x=1) reached a maximum value of 2.16×10⁻³ K⁻¹ at 219 K, which is as large again as that of the reference sample Bi₈₅Sb₁₅.     

The suppression of structural phase transformation in LaVO3 and La1−xSrxVO3 thin films fabricated by pulsed laser deposition

Highly oriented (100) thin films of LaVO₃ and La_1−xSr_xVO₃ have been fabricated by pulsed laser deposition in a reducing atmosphere. The films show a transition from insulating to metallic behaviour in the composition region of x, 0.175<x<0.200. In the single crystals of the antiferromagnetic insulating phase, a first-order structural phase transition is observed few degrees below the magnetic transition, which manifests itself as a kink in the temperature dependence of resistivity. In the highly oriented thin films of LaVO₃ and La_1−xSr_xVO₃ fabricated on lattice matched substrates in this study, the structural phase transformation in the insulating phase has been suppressed. The electrical conduction is found to take place via hopping through localized states at low temperatures. The metallic compositions show a non-linear (T^1.5) behaviour in the temperature dependence of resistivity. V (2p) core level spectra of these films show a gradual change in the relative intensities of V³⁺ and V⁴⁺ ions as the value of x increases.     

Temperature dependence of thermoelectric properties of Ni-doped CoSb3

Temperature dependences of the Hall coefficient, Hall mobility and thermoelectric properties of Ni-doped CoSb₃ have been characterized over the temperature range from 20 to 773 K. Ni-doped CoSb₃ is an n-type semiconductor and the conduction type changes from n-type to p-type at around 450 K. The temperature for the transition from n-type to p-type increased with increasing Ni content x. The Seebeck coefficient reaches a maximum value near the transition temperature. The electrical resistivity indicates that Co_1−xNi_xSb₃ is a typical semiconductor when x≤0.03 and a degenerate semiconductor when x>0.03. Thermal conductivity analyses show that the lattice component is predominant at lower temperatures and carrier and bipolar components become large at temperatures higher than the transition temperature. The thermoelectric figure of merit reaches a maximum value close to the transition temperature and the largest value, 4.67×10⁻⁴ K⁻¹ at 600 K, was obtained for x=0.05.     

Optical and electronic properties of nano-Cd1−xMnxTe alloy

Cd_1−xMn_xTe thin films were fabricated by thermal interdiffusion of multilayers of sputtered compound semiconductors as well as thermally evaporated elements. Electron microscopy revealed their nanostructures. The alloys have been investigated for evaluation of optical and electronic parameters. Spectrophotometry helped to find out the bandgap and composition; photoluminescence was used for observing relative transition probabilities at room temperature. Photoresponse showed the light dependence of the resistance of the alloy films. Hall measurements and four-probe tests indicated the influence of manganese on the room-temperature electronic properties of the alloy.     

Effect of Bi2O3 on EPR, optical transmission and DC conductivity of vanadyl doped alkali bismuth borate glasses

Glasses with composition xBi₂O₃·(30−x)M₂O·70B₂O₃ (M=Li, Na) containing 2 mol% V₂O₅ have been prepared over the range 0≤x≤15 (x is in mol%). The electron paramagnetic resonance spectra of VO²⁺ of these glasses have been recorded in the X-band (≈9.3 GHz) at room temperature (RT≈300 K). Spin Hamiltonian parameters, g_∥, g_⊥, A_∥, A_⊥, dipolar hyperfine coupling parameter, P, and Fermi contact interaction parameter, K, have been calculated. The molecular orbital coefficients, α² and γ², have been calculated by recording the optical transmission spectra. In xBi₂O₃·(30−x)Li₂O·70B₂O₃ glasses there is decrease in the tetragonality of the V⁴⁺O₆ complex for x up to 6 mol% whereas for x≥6 mol%, tetragonality increases. In xBi₂O₃·(30−x)Na₂O·70B₂O₃ glasses there is increase in the tetragonality of the V⁴⁺O₆ complex with increasing x. The 3d_xy orbit expands with increase in Bi₂O₃:M₂O ratio. Values of the theoretical optical basicity, Λ_th, have also been reported. The DC conductivity increases with increase in temperature. The order of conductivity is 10⁻⁵ ohm⁻¹ m⁻¹ at low temperature and 10⁻³ ohm⁻¹ m⁻¹ at high temperature. The DC conductivity decreases and the activation energy increases with increase in Bi₂O₃:M₂O ratio.