Studies on Structural,Morphological and Optical Properties of Chemically Deposited CdS<Subscript>1-x</Subscript>Se<Subscript>x</Subscript> Thin Films

The thin films of CdS_1-xSe_x were successfully deposited over glass substrates by chemical bath deposition technique. Cadmium acetate, thiourea and sodium selenosulfate were used as source materials for Cd²⁺, S^2? and Se^2? ions, while 2-mercaptoethanol was used as capping agent. The various deposition conditions such as precursor concentration, deposition temperature, pH and deposition time were optimized for the deposition of CdS_1-xSe_x thin films of good quality and the films were annealed at 200° and 300 °C. The structural, morphological, chemical and optical properties were examined by various characterization techniques and discussed in detail. The optical band gap of CdS_1-xSe_x thin film samples were estimated and found in the range from 2.11 to 1.79 eV for as-deposited and annealed thin films.     

Effect of deposition time on structural and physical properties of Cu<Subscript>2</Subscript>CdSnS<Subscript>4</Subscript> thin films prepared by spray pyrolysis technique: experimental and ab initio study

Cu₂CdSnS₄ (CCdTS) thin films were synthesized using chemical spray pyrolysis deposition technique. The effect of various deposition times (20, 40, 60 min) on growth of these films was investigated. The as-synthesized Cu₂CdSnS₄ thin films were characterized by X-ray diffraction (XRD), ultraviolet–visible (UV–Vis) spectroscopy, Raman spectroscopy and Hall Effect measurements. The XRD pattern of Cu₂CdSnS₄ structured in stannite phase with preferential orientations along (112) planes. Raman spectrum revealed very strong peak at about 333 cm^?1. The films have the direct optical band gaps of 1.39–1.5 eV. The optimum hole mobility was found to be 3.212 × 10¹ cm² v^?1 s^?1 for the film deposited on 60 min. The electronic structure and optical properties of the stannite structure Cu₂CdSnS₄ were obtained by ab initio calculations using the Korringa–Kohn–Rostoker method combined with the Coherent Potential Approximation (CPA), as well as CPA confirms our results.     

Gamma irradiation effects on structural and optical properties of amorphous and crystalline Nb<Subscript>2</Subscript>O<Subscript>5</Subscript> thin films

The structural and optical properties of RF sputtered Nb₂O₅ thin films are studied before and after gamma irradiation. The films are subjected to structural and surface morphological analyses by using X-ray (XRD) and field emission scanning electron microscope techniques. In the wavelength range of 300–2000 nm, the optical parameters for amorphous and crystalline Nb₂O₅ thin films are estimated at differently exposed γ-irradiation doses (0, 50, 100 and 200 kGy). The optical constants, such as optical energy band gap, absorption coefficient, refractive index and oscillators parameters of amorphous and crystalline Nb₂O₅ thin films are calculated. The optical band gaps of γ-irradiated amorphous and crystalline Nb₂O₅ thin films are determined. In the non-absorbing region, the real part of the refractive index of amorphous and crystalline Nb₂O₅ thin films slightly increases with the increase in the exposed γ-irradiation dose.     

Optoelectronics properties of TiO<Subscript>2</Subscript>:Cu thin films obtained by sol gel method

In this research, Cu-doped TiO₂ thin films have been successfully deposited onto a glass substrate by Sol–gel technique using dip coating method. The films were annealed at different annealing temperatures (400–500 °C) for 1 h. The structural, optical and electrical properties of the films were investigated and compared using X-ray Diffraction, UV–visible spectrophotometer and 4-point probe method. Optical analysis by mean transmittance T(λ) and absorption A(λ) measurements in the wavelength range between 300 to 800 nm allow us to determine the indirect band gap energy. DRX analysis of our thin films of TiO₂:Cu shows that the intensities of the line characteristic of anatase phase increasing in function of the temperature.     

The effect of argon gas pressure on structural,morphological and photoluminescence properties of pulsed laser deposited KY<Subscript>3</Subscript>F<Subscript>10</Subscript>:Ho<Superscript>3+</Superscript> thin films

KY₃F₁₀:Ho³⁺ thin films were deposited by a pulsed laser deposition technique with Nd–YAG laser radiation (λ = 266 nm) on (100) silicon substrate. The XRD and FE-SEM results show improved crystalline structure for the film deposited at a pressure of 1 Torr. The AFM results show that the RMS roughness of the films increases with rise in argon gas pressure. The EDS elemental mapping shows Y-excess for all the films deposited under all pressures, and this is attributed to its higher mass and low volatility as compared to K and F. XPS analysis further confirmed Y-excess in the deposited films. Green PL emission at 540 nm was investigated at three main excitation wavelengths, namely 362, 416 and 454 nm. The PL emission peaks increase with rise in background argon gas pressure for all excitation wavelengths. The highest PL intensity occurred at excitation of 454 nm for all the thin films. In addition, faint red (near infrared) emission was observed at 750 nm for all the excitations. The green emission at 540 nm is ascribed to the ⁵F₄–⁵I₈ and ⁵S₂–⁵I₈ transitions, and the faint red emission at 750 nm is due to the ⁵F₄–⁵I₇ and ⁵S₂–⁵I₇ transitions of Ho³⁺.     

Characterization of Zn<Subscript>2</Subscript>SnO<Subscript>4</Subscript> Thin Films Prepared by RF Magnetron Sputtering

Zn₂SnO₄ (ZTO) is a stable semiconductor in ZnO–SnO₂ system and important transparent conducting oxide (TCO) predominantly used in optoelectronic devices. ZTO thin films were prepared by RF magnetron sputtering using Zn₂SnO₄ ceramic target in this paper. The effects of annealing temperatures and oxygen contents on characterization of ZTO thin films were studied. The results show that ZTO thin films prepared by RF magnetron sputtering are amorphous with an optical band gap of 3.22 eV. After annealing at 650°C in Ar atmosphere for 40 min, ZTO films possess a spinel structure with an optical band gap of 3.62 eV. The atomic force microscope (AFM) data of morphology reveals that the surface roughness of films is about 2 nm. The results of energy dispersive spectrometer (EDS) show that the concentration ratio of Zn to Sn is in the range from 1.44 to 1.57. The results of Hall-effect-measurement system reveal that the resistivity of films varies from 102 to 10–1 Ωcm, carrier concentration is about 10¹⁷ cm^–3, and mobility ranges from 10⁰ to 10¹ cm² v^–1 s^–1.     

Fast electrochromic response of porous-structured cobalt oxide (Co<Subscript>3</Subscript>O<Subscript>4</Subscript>) thin films by novel nebulizer spray pyrolysis technique

Electrochromic effect of cobalt oxide thin films was studied as a function of substrate temperature (573–673 K). Tricobalt tetraoxide (Co₃O₄) thin films were deposited on glass and fluorine-doped tin oxide (FTO) substrates by nebulized spray technique using cobalt nitrate as precursor material. The XRD patterns indicated (311) plane was dominant for all the films irrespective of the deposition temperature. Williamson-Hall (W-H) analysis was made to understand the strain variation in the prepared Co₃O₄ films under different deposition temperature by employing uniform deformation model (UDM). Scanning electron microscopy images revealed porous morphology for the film prepared at 623 K. The optical parameters such as refractive index (n), extinction coefficient (k), and band gap were derived from UV-visible spectra of Co₃O₄ films. The electrochromic performance of the deposited Co₃O₄ films was analyzed through cyclic voltammetry, chronocoulometry, chronoamperometry, and iono-optical studies.     

Exciton absorption spectrum of thin CsPbI<Subscript>3</Subscript> and Cs<Subscript>4</Subscript>PbI<Subscript>6</Subscript> films

A method for preparing thin films of CsPbI₃ and Cs₄PbI₆ complex compounds has been developed. Their absorption spectrum is investigated in the energy range of 2–6 eV at temperatures from 90 to 500 K. It is found that the CsPbI₃ compound is unstable and passes to the Cs₄PbI₆ phase upon heating at T ≥ 400 K.     

Volume of precursor solution effect on the properties of SnO<Subscript>2</Subscript> thin films prepared by nebulized spray pyrolysis technique

Undoped SnO₂ thin films have been deposited on amorphous glass substrates with different precursor solution volume (10, 15, 20 and 25 ml) using simple and cost-effective nebulized spray pyrolysis technique. The influence of precursor solution on structural, optical, photoluminescence and electrical properties had been studied. The X-ray diffraction spectra prove the polycrystalline nature of SnO₂ with tetragonal structure. All the films show a preferred growth orientation along (110) diffraction plane. The average transmittance of SnO₂ thin films varied between 82 and 75% in the visible as well as IR region. The band gap energy decreases from 3.74 to 3.64 eV corresponding to direct transitions with the precursor solution volume had increased from 10 to 20 ml and then increased as 3.72 eV for 25 ml. SEM pictures demonstrated polyhedrons like grains. EDX confirmed the existence of Sn and O elements in all the prepared SnO₂ thin films. Photoluminescence spectra at room temperature revealed that the four emission bands in all the samples such as sharp dominant peak at 361 nm with shoulder peak at 377 nm (UV region), a broad and low intensity peak at 492 nm (blue region) and 519 nm (green region). The electrical parameters were examined by Hall effect measurements, which demonstrated that the film prepared at 20 ml precursor solution volume possess minimum resistivity 2.76?×?10^?3 Ω-cm with activation energy 0.10 eV and maximum figure of merit 1.54?×?10^?2 (Ω/sq)^?1.     

Semiconducting SnO<Subscript>2</Subscript>-TiO<Subscript>2</Subscript> (S-T) composites for detection of SO<Subscript>2</Subscript> gas

SnO₂-TiO₂ (S-T) composites with different molar ratios were prepared by mechanical mixing followed by sintering at 700 °C for 4 h in air. The structural and microstructural properties of the composites were investigated using powder X-ray diffraction (PXRD) and scanning electron microscopy (SEM). S-T composites were investigated by introducing SO₂ to test their chemical stability using PXRD and SEM coupled with energy dispersive X-ray (EDX) analysis. The sensing performance was measured at different temperatures using various SO₂ concentrations (10–100 ppm). A composite comprising 25 mol% of SnO₂ and 75 mol% TiO₂ (S25-T75) exhibited the highest sensitivity comparing to other S-T composites studied under the presently investigated conditions. t ₉₀ (90 % of response time) was found to be ～5 min for thick pellet (~2 mm in thickness). SO₂ sensing mechanism has been explained through the band structure model.     

On the response of semitransparent nanoparticulated films of LuPO<Subscript>4</Subscript>:Eu in poly-energetic X-ray imaging applications

In the present work, we demonstrate the fabrication technique of highly translucent layers of nanoparticulated (~50 nm) LuPO₄:Eu phosphor, present their basic luminescent properties and give results of their performance in a planar imaging system coupled to a CMOS photodetector. For comparison, the imaging performance of an opaque Gd₂O₂S:Eu phosphor screen prepared by sedimentation is also shown. The X-ray detection parameters as well as the luminescence efficiency of the investigated films were discussed. Results show that the in-line transmittance at ~600–700 nm, in the range of the phosphor luminescence, varies with respect to the thickness of the films from 40 to 50 % for a film of 67 μm thick to 4–12 % when the thickness increases to 460 μm. Yet, X-ray detection parameters get enhanced as the thickness of the films increases. Those results affect the luminescence efficiency curves of the films under poly-energetic X-ray radiation of various tube energies. The normalized noise power spectrum values were found similar for LuPO₄:Eu films and a phosphor screen made using commercial Gd₂O₂S:Eu powder. The detective quantum efficiency of our films is clearly lower compared to the Gd₂O₂S:Eu screen from 2 to 10 cycles mm^?1 frequency range while the modulation transfer function is lower from 0 to 5.5 cycles mm^?1 frequency range. The acquired data allow to predict that high-temperature sintering of our films under pressure may help to improve their imaging quality, since such a processing should increase the luminescence efficiency without significant growth of the grains and thus without sacrificing their translucent character.     

Photovoltaic structures using AgSb(S x Se1−x )2 thin films as absorber

Photovoltaic structures were prepared using AgSb(S _x Se_1?x )₂ as absorber and CdS as window layer at various conditions via a hybrid technique of chemical bath deposition and thermal evaporation followed by heat treatments. Silver antimony sulfo selenide thin films [AgSb(S _x Se_1?x )₂] were prepared by heating multilayers of sequentially deposited Sb₂S₃/Ag dipped in Na₂SeSO₃ solution, glass/Sb₂S₃/Ag/Se. For this, Sb₂S₃ thin films were deposited from a chemical bath containing SbCl₃ and Na₂S₂O₃. Then, Ag thin films were thermally evaporated on glass/Sb₂S₃, followed by selenization by dipping in an acidic solution of Na₂SeSO₃. The duration of dipping was varied as 3, 4 and 5 h. Two different heat treatments, one at 350 °C for 20 min in vacuum followed by a post-heat treatment at 325 °C for 2 h in Ar, and the other at 350 °C for 1 h in Ar, were applied to the multilayers of different configurations. X-ray diffraction results showed the formation of AgSb(S _x Se_1?x )₂ thin films as the primary phase and AgSb(S,Se)₂ and Sb₂S₃ as secondary phases. Morphology and elemental detection were done by scanning electron microscopy and energy dispersive X-ray analysis. X-ray photoelectron spectroscopic studies showed the depthwise composition of the films. Optical properties were determined by UV–vis–IR transmittance and reflection spectral analysis. AgSb(S _x Se_1?x )₂ formed at different conditions was incorporated in PV structures glass/FTO/CdS/AgSb(S _x Se_1?x )₂/C/Ag. Chemically deposited post-annealed CdS thin films of various thicknesses were used as window layer. J–V characteristics of the cells were measured under dark and AM1.5 illumination. Analysis of the J–V characteristics resulted in the best solar cell parameters of V _oc = 520 mV, J _sc = 9.70 mA cm^?2, FF = 0.50 and η = 2.7 %.     

Effect of Al doping on structural,optical and electrical properties of SnO2 thin films synthesized by pulsed laser deposition

Aluminium-doped (Al = 0–5?wt.%) SnO₂ thin films with low-electrical resistivity and high optical transparency have been successfully synthesized by pulsed laser deposition technique at 500 °C. Structural, optical and electrical properties of the as-deposited and post-annealed thin films were investigated. X-ray diffraction patterns suggest that the films transform from crystalline to amorphous state with increasing aluminium content. The root mean square (R_q) surface roughness parameter, determined by atomic force microscopy decreases upon annealing of the as-deposited film. While resistivity of the film is the lowest (9.49 × 10^?4 Ω-cm) at a critical doping level of 1?wt.% Al, optical transparency is the highest (nearly 90%) in the as-deposited condition. Temperature dependence of the electrical resistivity suggests that the Mott’s variable range hopping process is the dominant carrier transport mechanism in the lower temperature range (40–135 K) for all the films whereas, thermally activated band conduction mechanism seems to account for conduction in the higher temperature region (200–300 K).     

Characterization and electrical properties of high-<Emphasis Type="Italic">k</Emphasis> GdScO<Subscript>3</Subscript> thin films grown by atomic layer deposition

Gadolinium scandium oxide (Gd-scandate, GdScO₃) thin films were grown by atomic layer deposition (ALD) from β-diketonate precursors M(thd)₃ (M=Gd, Sc; thd=2,2,6,6-tetramethyl-3,5-heptanedionato) and ozone. The deposition parameters were optimized to produce films with the stoichiometric 1:1 metal ratio and a series of samples with nominal thicknesses of 5, 10, 15, and 20 nm were prepared. At 300 °C the metal precursor pulsing ratio Gd:Sc=5:6 yielded amorphous stoichiometric films and a growth rate of 0.21 Å/cycle. The films stayed amorphous up to 900 °C. The surface was probed with an AFM and the rms roughness was found to be 0.3 nm for the 5–20 nm thick films. The electrical properties of the as-deposited films proved to be very promising, with a dielectric constant of ～22 and leakage current density of 340 μA/cm², measured at -2 V.     

Correlation of plume dynamics and oxygen pressure with VO2 stoichiometry during pulsed laser deposition

Vanadium dioxide thin films have been deposited on Corning glass substrates by a KrF laser ablation of V₂O₅ target at the laser fluence of 2 J?cm^?2. The substrate temperature and the target-substrate distance were set to 500 ^°C and 4 cm, respectively. X-ray diffraction analysis showed that pure VO₂ is only obtained at an oxygen pressure range of 4×10^?3–2×10^?2 mbar. A higher optical switching contrast was obtained for the VO₂ films deposited at 4×10^?3–10^?2 mbar. The films properties were correlated to the plume-oxygen gas interaction monitored by fast imaging of the plume.     

Titanium-modified Li<Subscript>4</Subscript>Ti<Subscript>5</Subscript>O<Subscript>12</Subscript> with a synergistic effect of surface modifying,bulk doping,and size reducing

In this work, a one-step solid-phase sintering process via TiO₂ and Li₂CO₃ under an argon atmosphere, with ultra-fine titanium powder as the modifying agent, was used to prepare a nano-sized Li₄Ti₅O₁₂/Ti composite (denoted as LTO–Ti) at 800 °C. The introduction of ultra-fine metal titanium powder played an important role. First, X-ray photoelectron spectroscopy demonstrates that Ti⁴⁺ was partially changed into Ti³⁺, through the reduction of the ultra-fine metal titanium powder. Second, X-ray diffraction revealed that the ultra-fine metal titanium powder did not react with the bulk structure of Li₄Ti₅O₁₂, while some pure titanium peaks could be seen. Additionally, the size of LTO–Ti particles could be significantly reduced from micro-scale to nano-scale. The structure and morphology of LTO–Ti were characterized by X-ray diffraction, X-ray photoelectron spectroscopy, Raman spectroscopy, scanning electron microscopy, and transmission electron microscopy. Electrochemical tests showed a charge/discharge current of 0.5, 1, 5, and 10 C; the discharge capacity of the LTO–Ti electrode was 170, 161, 140, and 111 mAh g^?1. It is believed that the designed LTO–Ti composite makes full use of both components, thus offering a large contact area between the electrolyte and electrode, high electrical conductivity, and lithium-ion diffusion coefficient during electrochemical processes. Furthermore, ultra-fine titanium powder, as the modifying agent, is amenable to large-scale production.     

Spray pyrolysis-deposited TiO<Subscript>2</Subscript> thin films as high-performance lithium ion battery anodes

Focusing on additive-free electrodes, thin films are of typical interest as electrodes for lithium ion battery application. Herein, we report the fabrication of TiO₂ thin films by spray pyrolysis deposition technique. X-ray diffraction and transmission electron microscopic analysis confirms the formation of anatase TiO₂. Electrochemical evaluation of these sub-micron TiO₂ thin films exhibits high-rate performance and long cycling stability. At 1C rate (1C?=?335 mA/g), the electrode delivered discharge capacity of 247 mAh/g allowing about 0.74 lithium into the structure. The electrodes also delivered specific capacities of 122 and 72 mAh/g at 10 and 30C rates, respectively. Without conductive additives, this excellent performance can be attributed to the nanosize effect of TiO₂ particles combined with the uniform porous architecture of the electrode. Upon cycling at high rates (10 and 30C), the electrode exhibited excellent cycling stability and retention, specifically only <?0.6% capacity loss per cycle over 2500 cycles.     

Large optical nonlinearity in CaCu<Subscript>3</Subscript>Ti<Subscript>4</Subscript>O<Subscript>12</Subscript> thin films

CaCu₃Ti₄O₁₂ (CCTO) thin films were successfully prepared on LaAlO₃ substrates by pulsed laser deposition technique. We measured the nonlinear optical susceptibility of the thin films using Z-scan method at a wavelength of 532 nm with pulse durations of 25 ps and 7 ns. The large values of the third-order nonlinear optical susceptibility, χ ⁽³⁾, of the CCTO film were obtained to be 2.79×10⁻⁸ esu and 3.30×10⁻⁶ esu in picosecond and nanosecond time regimes, respectively, which are among the best results of some representative nonlinear optical materials. The origin of optical nonlinearity of CCTO films was discussed. The results indicate that the CCTO films on LaAlO₃ substrates are promising candidate materials for applications in nonlinear optical devices.     

Modification of structure, morphology and physical properties of tin sulfide thin films by pulsed laser irradiation

This paper presents modification of tin sulfide (SnS) thin films by pulsed laser irradiation. Tin sulfide films of 1 μm thickness were prepared using chemical bath deposition (CBD) technique. The chemical bath contained 5 ml acetone, 12 ml of triethanolamine, 8 ml of 1 M thioacetamide, 10 ml of 4 M ammonium hydroxide and 65 ml of distilled water. The chemical bath was kept at a constant temperature of 60 °C for 6 h which resulted in SnS films with 500 nm thickness. By double deposition, the final thickness of SnS thin films obtained was 1 μm. Laser processing was conducted to modify the structure, morphology and physical properties of the SnS thin films. The laser specifications were pulsed Nd:YAG laser with 532 nm wavelength, 300 mJ pulse energy and 10 ns pulse width. Properties of the laser-irradiated SnS thin films were compared with the as-prepared SnS thin films. The changes in structure, morphology, optical and electrical properties of the laser-irradiated SnS thin films were described.     

Structure and optical properties of Cd-substituted ZnO (Zn1−x Cd x O) thin films synthesized by the dc reactive magnetron sputtering

The ternary Zn_1?x Cd _x O (x = 0, 0.2) thin films with wurtzite structure and highly (002)-preferred orientations were deposited on glass substrates by the direct current (dc) reactive magnetron sputtering method. The X-ray diffraction, X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), optical absorption spectra and photoluminescence (PL) were employed to investigate the structural and the optical properties in detail. The results indicated that as x varied from x = 0–0.2, the diffraction angle of the (002) peaks decreased from ~34.36° to ~33.38° and the lattice spacing increased from 0.260 to 0.268 nm. Moreover, the optical band-gap of the Zn_1?x Cd _x O thin films with the wurtzite structure decreased from 3.20 eV at x = 0–2.70 eV at x = 0.2. Correspondingly, the near-band-edge PL was tuned in a wide visible region from ~393 to 467 nm. The chemical bonding states of Cd in Zn_1?x Cd _x O alloy thin films were examined by XPS analysis.