碳纳米锥力学特性的分子动力学研究

结合原子间短程作用势(Brenner势)和长程作用势(Lennard-Jones势),利用分子动力学方法对各种锥角的碳纳米锥进行拉伸和压缩实验,获得其载荷-应变关系曲线、受拉/压载荷极限、应变极限和构形演变等力学特性,并与等量原子组成的碳纳米管进行比较研究.研究结果表明,等量碳原子组成的碳纳米锥的受拉/压载荷极限随着锥角的增大先是增大后减小,受拉/压应变极限则随着锥角的增大而增大.与碳纳米锥相比,等量碳原子组成的碳纳米管的受拉/压载荷极限和应变极限显得既不突出也不逊色.在受压构形演化方面,与碳纳米管丰富的径向屈曲/扭转/侧向屈曲组合形变不同,112.88°和83.62°锥角的碳纳米锥受压沿轴向完美内陷,而60.0°和38.94°锥角的碳纳米锥受压发生侧向屈曲.     

一种在线测量微机械薄膜残余应力的新结构

提出了一种利用临界屈曲法在线测量微机械薄膜残余应力的新结构，并采用表面微加工技术制作了两种测试样品.搭建了在线观测实验装置来实时监控释放过程中结构出现的临界屈曲变形模态，由此判断出结构内部的应力状态，同时在测得临界刻蚀深度的情况下，采用有限元方法计算出残余应力大小.借助有限元方法，先研究了多个参数对临界屈曲应力的影响，然后利用这种新结构对薄膜残余应力进行了实际测量，所得结果与微旋转结构的应力测量结果基本吻合.分析及实验表明，新结构在测量薄膜残余应力方面有许多优点，具有较高的实用价值，不仅能满足大量程的应力检测要求，而且只用一个结构就可以同时测量压应力和拉应力，从而极大提高了器件版图空间的利用率.     

一种高温超导材料临界电流密度测试的方法

临界电流密度(J_c)是超导材料的重要特征参数之一,精确的测量临界电流密度对研究超导材料特性及超导器件稳定性具有重要意义.本文介绍了一种基于经典电磁感应理论和超导技术理论测量YBCO超导薄膜临界电流密度的方法和测试装置.研究显示,在液氮环境下,将超导薄膜加入初级线圈和次级线圈中间会明显影响次级线圈的接收效果.我们根据此测量方法搭建了一种测量YBCO薄膜临界电流密度的实验装置.在分析实验测量误差后,通过实验的对比,得到了加入超导薄膜对次级线圈的感应电压的影响,并分析感应电压与线圈互感之间的关系,从而算出超导薄膜的临界电流密度.实验通过噪声抑制和数据校正,准确地测量了超导薄膜的临界电流密度.     

3 T强磁场对真空蒸发Zn薄膜晶体结构的影响

在3 T强磁场下采用真空蒸发沉积在玻璃基片上制备了三种厚度分别为1,2,3 μm的Zn薄膜,并和无磁场下制备的薄膜进行了对比研究.对施加磁场和无磁场环境下制备的试样分别进行了X射线衍射研究.研究表明,3 T磁场下制备的Zn薄膜都是沿（002）面取向,而0 T磁场下制备的薄膜随着厚度的增加c轴取向逐渐减弱. 3 T磁场的取向作用可以维持Zn晶粒沿着c轴取向.利用扫描电子显微镜对薄膜表面形貌的研究发现,施加磁场制备的Zn薄膜表面晶粒要比无磁场条件下制备的薄膜有明显的细化.对磁场下Zn原子团形成进行了热力学分析,推导了磁场作用下的临界形核半径r^*_M和临界形核自由能ΔG^*_M.初步分析表明,r^*_M和ΔG^*_M减小从而增加临界形核浓度是Zn晶粒细化的原因. 关键词： 强磁场 晶体结构 真空蒸发沉积 薄膜     

高温超导薄膜临界电流密度的无损测量研究

临界电流密度Jc是超导薄膜的一个重要参量,它可以衡量超导薄膜的功率承载能力。大面积高温超导薄膜制成后,其Jc需要被无损精确测量。文中提出了一种新的交流磁场下的高温超导薄膜临界态模型:(1)基于此模型对薄膜的临界电流密度进行了精确无损测量;(2)并将实验测量的三次谐波电压曲线进行拟合研究。首先,根据麦克斯韦方程和伦敦方程,计算外加直流磁场超导薄膜Meissner态下电流和磁场在薄膜内的分布;然后分析薄膜进入临界态后内部电流的变化,在考虑顶扎力作用的情况下,提出了临界态电流和磁场非均匀分布模型;最后根据其模型,推导出三次谐波电压的表达式。为了验证该理论,分别对四片超导薄膜在不同频率下进行了三次谐波和临界电流密度测量。实验结果表明:三次谐波电压的理论与实验曲线一致;与四点传输法的测量结果相比较,该方法测量超导薄膜临界电流密度的误差在5%左右,具有高精度、无损伤、方便快捷等优点。     

固态和液态溶液中酞菁铜及其衍生物的光谱变化

研究了三种酞菁铜及其衍生物CuPc,tb-CuPc,oo-CuPc在不同环境状态下的吸收光谱的变化。讨论了三种被质子化前后在溶液中的吸收光谱Q带的红移机制,并与固体分散样品所产生的光谱进行了比较,研究了酞菁铜衍生物分散在聚合物薄膜样品分子间的相互作用导致的吸收光谱的改变。同时结合POM,DSC,XRD方法,进一步对薄膜材料的结构和物相进行了表征。结果表明在不同浓度酞菁铜衍生物掺杂的固体薄膜中,被分散的酞菁铜衍生物的分子之间仍然处于缔合或凝聚状态,降低酞菁铜衍生物掺杂浓度并不能解除缔合作用或改变固体薄膜样品中的吸收光谱。     

氧气退火温度对室温脉冲激光沉积氧化镓薄膜特性的影响

高质量氧化镓薄膜的获得是实现高性能氧化镓电子和光电子器件的重要前提条件之一。采用脉冲激光沉积技术,在室温下蓝宝石衬底上沉积氧化镓薄膜,并在氧气氛围下进行不同温度的退火,研究氧化镓薄膜特性的变化规律。结果表明：室温下沉积的氧化镓薄膜为非晶态,随着退火温度的升高,薄膜结晶程度变高,禁带宽度变大;退火前后氧化镓薄膜中都存在两种氧化价态镓,说明薄膜处于晶格氧缺失的状态;随着退火温度的升高,低价态镓比例减少,晶格氧的比例增加,薄膜质量升高;然而,过高的退火温度导致衬底中的铝扩散进入薄膜,薄膜质量变差,室温下生长的薄膜质量较差且与衬底之间的热膨胀系数和晶格失配,导致氧化镓薄膜高温退火时出现开裂的现象。     

Bi-2212高温超导股线受压临界电流测试与分析

运用Ansys软件建立Bi-2212超导股线简化二维截面模型,采用有限元方法研究平面压缩对热处理后的Bi-2212超导股线在不同的压缩条件下的应力与应变分布。通过分析得出:平板压缩使Bi-2212超导股线中超导区域中间位置的应力应变比靠近外层位置的应力应变要大;并根据分析得出股线在径向受压形变量0.04mm,0.10mm,0.15mm条件下股线超导区域平均应变的大小。通过低温实验测试了Bi-2212超导股线短样样品在4.2K和不同平行磁场强度下的临界电流,并且分析了在室温受压缩0.04mm,0.10mm,0.15mm条件下股线临界电流性能的变化,根据测试结果得出当Bi-2212股线受压缩应变时,股线的临界电流具有明显的下降。     

关于MgB2/Al2O3超导薄膜电阻转变和各向异性的研究

利用电子束蒸发方法将MgB2超导薄膜沉积到Al2O3(001)衬底上.采用标准的四引线法研究了磁场平行和垂直超导薄膜ab平面下的电阻转变.一个激活能模型 U(T,H)= U0(1-T/(Tc+δ))n (1-H/Hc2(0))m被建立用来分析超导薄膜磁通线的激活能和电阻转变,结果表明该模型能够在整个转变温度范围描述超导体磁通线的激活能和电阻转变.另外,利用多项式Hc2(t)=Hc2(0)+At+Bt2分析了MgB2/Al2O3超导薄膜的上临界磁场,获得了该超导薄膜的各向异性参数γ=Hc2ab(0)/Hc2c(0)= 2.26.     

硼对电感耦合等离子体激发温度的影响

研究了制样时加入的硼酸或硼酸盐对感耦等离子体原子发射光谱的基本参数--等离子体激发温度的影响.测温实验用Fe线为温标线,采用多谱线Boltzmann作图法测量含有不同四硼酸钠浓度的溶液进样时的等离子体激发温度.测定结果表明,采用不同lg(gf)文献值计算所得的激发温度有所差距,但是同一lg(gf)文献值下测得的不同硼浓...     

有机固体薄膜的交流电导

本文讨论了有机固体薄膜交流电导的频率依赖性,指出在较高频率下,电导正比于频率两次方的依赖性,是由于电极接触电阻和薄膜电容所引致的假象。作者建议了一种外加串联电阻法来求取电极接触电阻值,从而使电导和电容的频率依赖性实验数据得到改正。提出了表征有机固体薄膜交流电导特性的三个参数,即在极低频下的直流电导率σ_d.c.值、在较高频区σ(f)∝fⁿ中的n值和在lgσ-lgf图上高频区直线与σ_d.c.水平线的交点f_x。对聚乙烯咔唑( 关键词：     

Disorder effect on the traffic flow behavior

The effects of some disorders, on the traffic flow behavior, are studied numerically. Especially, the effect of mixture of vehicles of different velocities and/or lengths, the effects of different drivers reactions, the position and the extraction rate of off-ramp in the free way. Using a generalized optimal velocity model, for a mixture of fast and slow vehicles, we have investigated the effect of delay times τ _f and τ _s on the fundamental diagram. It is Found that the small delay times have almost no effect, while, for sufficiently large delay time τ _s , the current profile displays qualitatively five different forms, depending on τ _f , τ _s and the fractions f _f and f _s of the fast and slow cars, respectively. The velocity (current) exhibits first-order transitions at low and/or high densities, from freely moving phase to the congested state, and from congested state to a jamming one, respectively. The minimal current appears in intermediate values of τ _s . Furthermore there exist, a critical value of τ _f above which the meta-stability and hysteresis appear. The effects of disorder due to drivers behaviors have been introduced through a random delay time τ allowing the car to reach its optimal velocity traffic flow models with open boundaries. In the absence of the variation of the delay time Δτ, it is found that the transition from unstable to meta-stable and from meta-stable to stable state occur under the effect of the injecting and the extracting rate probabilities α and β respectively. Moreover, the perturbation of the traffic flow behavior due to the off-ramp has been studied using numerical simulations in the one dimensional cellular automaton traffic flow model with open boundaries. When the off-ramp is located between two critical positions i _c1 and i _c2 the current remains constant (plateau) for β_0c1 < β₀ < β_0c2, and the density undergoes two successive first order transitions: from high density to plateau current phase and from average density to the low one. In the case of two off-ramps, these transitions occur only when the distance between ramps, is smaller than a critical value.     

In situ observation and analysis of multiple cracking phenomena in thin glass layers deposited on polymer films

The multiple cracking phenomena in thin SiO_x films deposited on 12 μm-thick polyethylene terephthalate (PET) substrates during the tensile test are investigated. Thicknesses of SiO_x films ranged from 43 to 320 nm. The multiple cracking progress is observed in situ by optical microscopy and from which the crack density in SiO_x films is measured. The predicted crack density by the shear lag analysis including residual strains, explains reasonably well the experimental results. The critical energy release rate, G_c, for the first film cracking is also evaluated from simple energy balance arguments. Although it depends on the analytical model, G_c is estimated to be a constant value of about 1.0 J/m² regardless of the thickness.     

The critical layer number of epitaxially grown Cu and Ni films with strained structure

The thickness dependent structural transition of epitaxially grown thin films from a tetragonal structure to the corresponding bulk structure is thermodynamically considered. It is found that there exists a competition between elastic energy of the tetragonal structure and film–substrate interface energy. Equilibrium between these energies is present at a critical layer number n_c. The predictions for n_c are in agreement with the experimental results of some different metallic films deposited on fcc metallic substrates.     

Study of well adherent DLC film deposited on piezoelectric LiTaO3 substrate

A well adherent diamond-like carbon (DLC) film was deposited on piezoelectric LiTaO₃ substrate using PECVD by inserting SiO₂ interlayer. DLC film was characterized using Raman spectroscopy and AFM. Physical and mechanical properties were measured using XRR, ellipsometry, scratch test and nano-indentation. The DLC film exhibits the characteristics of hydrogenated amorphous carbon and a very smooth surface with a 0.25 nm RMS. Scratch test shows that critical load (L_c) is 18 N, which is good enough for applying DLC film to SAW device. The measured mass density, refractive index, hardness and Young’s modulus of DLC film deposited on LiTaO₃ are comparable to the reported values for hydrogenated amorphous carbon film, irrespective of substrates on which the films were deposited.     

Attenuation of interfacial pinning enhancement in YBCO using a PrBCO buffer layer

Numerous experimental results have suggested that the J_c of YBa₂Cu₃O₇ (YBCO) films is significantly higher near the film–substrate interface than in the remainder of the film. We previously proposed that this effect is due to interfacial pinning enhancement caused by stress and the resulting misfit dislocations at the heteroepitaxial interface. To test this hypothesis we have used a non-superconducting PrBa₂Cu₃O_7?δ (PrBCO) buffer layer to minimize the lattice mismatch with YBCO. We find that the PrBCO layers lower J_c of the 0.4 μm YBCO films in a predictable way, and that, if sufficiently thick (～0.5 μm), they eliminate interfacial enhancement altogether. Our interpretation of this result is that the defects responsible for interfacial enhancement of flux pinning originate at the bottom of the non-superconducting PrBCO layer, which screens the pinning centers from vortices in YBCO. This result demonstrates that the pinning enhancement arises from stress at the film–substrate interface.     

The metal-insulator transition in ‘random’ Al−Ge films

Electronic transport properties have been measured on 3500 Å ‘random’ Al?Ge films. The room temperature resistivity exhibits a sharp discontinuous jump at the metal-insulator transition at the critical metallic fraction, φ_c=8.8 vol% Al. A new procedure is described for extracting values for the zero temperature conductivity σ(0) from the metallic low temperature conductivity data. When σ(0) is extrapolated to zero as a function of Al content, the value obtained for the critical aluminum fraction φ_c is in good agreement with the room temperature value.     

The upper critical magnetic field of lead as a function of the mean free path of the electrons

The transition curves of quenched lead films are measured in a perpendicular magnetic field as a function of the field strength. We vary the mean free path of the electrons by different condensation temperatures and by the annealing of the films. An influence of the edge of the film on the resistance measurement is suppressed by the superposition of iron onto the lead film. We will show, that the measured critical fieldB _{c ⊥} of the film is the upper critical fieldB _c2 of a bulk superconductor with the sameeffective mean free path. As a result of the measurements we obtain ?B _c2/?T as a function of the degree of disorder (the mean free path of the electrons) of the films. The results are compared with the theory of Gor'kov for the weak coupling superconductor and the theory of Eilenberger and Ambegaokar for the strong coupling superconductor. They disagree with both theories. From the magnetic measurement we can determine the coherence length of lead. An independent determination at the same film is given by the proximity effect of the system Pb/Fe. The results of both methods are compared.     

Simulation studies of gas-liquid transitions in two dimensions via a subsystem-block-density distribution analysis

The finite-size scaling analysis of the density distribution function of subsystems of a system studied at constant total density is studied by a comparative investigation of two models: (i) the nearest-neighbor lattice gas model on the square lattice, choosing a total lattice size of 64×64 sites. (ii) The two-dimensional off-lattice Lennard-Jones system (truncated at a distance of 2.5 σ, σ being the range parameter of the interaction) withN=4096 particles, applying the NVT ensemble. In both models, the density distribution functionP _L (ρ) is obtained forL×L subsystems for a wide range of temperaturesT, subblock linear dimensionsL and average densities <ρ>. Particular attention is paid to the question whether accurate estimates of critical temperatureT _c and critical density ρ _c can be obtained. In the lattice gas model these critical parameters are known exactly and the limitations of the approach can thus be definitively asserted. The final estimates for the Lennard Jones problem areT _c =0.47±0.01 (in units of the Lennard Jones energy ε) and ρ _c (in units of σ²), a comparison with previous estimates is made.