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1.
Quantum Hall effect (QHE), as a class of quantum phenomena that occur in macroscopic scale, is one of the most important topics in condensed matter physics. It has long been expected that QHE may occur without Landau levels so that neither external magnetic field nor high sample mobility is required for its study and application, Such a QHE free of Landau levels, can appear in topological insulators (TIs) with ferromagnetism as the quantized version of the anomalous Hall effect, i.e., quantum anomalous Hall (QAH) effect. Here we review our recent work on experimental realization of the QAH effect in magnetically doped TIs. With molecular beam epitaxy, we prepare thin films of Cr-doped (Bi,Sb)2Te3 TIs with well- controlled chemical potential and long-range ferromagnetic order that can survive the insulating phase. In such thin films, we eventually observed the quantization of the Hall resistance at h/e2 at zero field, accompanied by a considerable drop in the longitudinal resistance. Under a strong magnetic field, the longitudinal resistance vanishes, whereas the Hall resistance remains at the quantized value. The realization of the QAH effect provides a foundation for many other novel quantum phenomena predicted in TIs, and opens a route to practical applications of quantum Hall physics in low-power-consumption electronics.  相似文献   

2.
Quantum anomalous Hall(QAH) effect is a quantum Hall effect that occurs without the need of external magnetic field. A system composed of multiple parallel QAH layers is an effective high Chern number QAH insulator and the key to the applications of the dissipationless chiral edge channels in low energy consumption electronics. Such a QAH multilayer can also be engineered into other exotic topological phases such as a magnetic Weyl semimetal with only one pair of Weyl points. This work reports the first experimental realization of QAH multilayers in the superlattices composed of magnetically doped(Bi,Sb)_2Te_3 topological insulator and Cd Se normal insulator layers grown by molecular beam epitaxy. The obtained multilayer samples show quantized Hall resistance h/N_e~2, where h is Planck's constant, e is the elementary charge and N is the number of the magnetic topological insulator layers, resembling a high Chern number QAH insulator. The QAH multilayers provide an excellent platform to study various topological states of matter.  相似文献   

3.
杨菲  王海龙  潘晖 《中国物理 B》2017,26(1):17102-017102
The exchange field effects on topological Dirac semimetal(DSM) films are discussed in this article. A topological phase transition can be controlled by tuning the exchange field together with the quantum confinement effects. What is more interesting is that the system can transit into the quantum anomalous Hall(QAH) state from the topologically trivial state(Z_2 = 0) or from the topologically nontrivial state(Z_2 = 1), depending on the thickness of the DSM films. This provides a useful mechanism to realize the QAH state from the DSM.  相似文献   

4.
We examine quantum anomalous Hall(QAH) insulators with intrinsic magnetism displaying quantized Hall conductance at zero magnetic fields.The spin-momentum locking of the topological edge stats promises QAH insulators with great potential in device applications in the field of spintronics.Here,we generalize Haldane's model on the honeycomb lattice to a more realistic two-orbital case without the artificial real-space complex hopping.Instead,we introduce an intraorbital coupling,stemming directly from the local spin-orbit coupling(SOC).Our d_(xy)/d_(x~2-y~2) model may be viewed as a generalization of the bismuthene p_x/p_y-model for correlated d-orbitals.It promises a large SOC gap,featuring a high operating temperature.This two-orbital model nicely explains the low-energy excitation and the topology of two-dimensional ferromagnetic iron-halogenides.Furthermore,we find that electronic correlations can drive the QAH states to a c=0 phase,in which every band carries a nonzero Chern number.Our work not only provides a realistic QAH model,but also generalizes the nontrivial band topology to correlated orbitals,which demonstrates an exciting topological phase transition driven by Coulomb repulsions.Both the model and the material candidates provide excellent platforms for future study of the interplay between electronic correlations and nontrivial band topology.  相似文献   

5.
We discuss electronic and magnetic properties of the Fe-doped GaBi honeycomb using first principles calculations. Our analysis shows that the pristine GaBi honeycomb transitions from being a two-dimensional quantum spin Hall (QSH) insulator to a quantum anomalous Hall (QAH) insulator when it is doped with one Fe atom in a 4 × 4 GaBi honeycomb. The QAH phase in Fe-doped GaBi is found to be robust in that it maintains its Chern number (C = 1) under fairly large strains ( ∼ 4%) and supports a gap as large as 112 meV at 2.21% strain. The QAH phase is also retained when the Fe-doped GaBi is placed on a CdTe substrate, suggesting that Fe-doped GaBi films could be useful for spintronics applications.  相似文献   

6.
There has been a great deal of interest over the last two decades on the fractional quantum Hall effect, a novel quantum many-body liquid state of strongly correlated two-dimensional electronic systems in a strong perpendicular magnetic field. The most pronounced fractional quantum Hall states occur at odd denominator filling factors of the lowest Landau level and are described by the Laughlin wave function. It is well known that exact closed-form solutions for many-body wave functions, including the Laughlin wave function, are generally very rare and hard to obtain. In this work we present some exact results corresponding to small systems of electrons in the fractional quantum Hall regime at odd denominator filling factors. Use of Jacobi coordinates is the key tool that facilitates the exact calculation of various quantities. Expressions involving integrals over many variables are considerably simplified with the help of Jacobi coordinates allowing us to calculate exactly various quantities corresponding to systems with several electrons.  相似文献   

7.
We theoretically discuss the influence of driving laser field on the topological nature, one of the manifestation of the electron Berry phase effect, in two-dimensional electronic systems. Adiabatic change of the laser amplitude with circular polarization alters the “order parameter”, termed the Chern number, in topological insulator with broken time-reversal symmetry, resulting in photo-induced phase transition. The finding is an optical analog of the integer quantum Hall effect, that is triggered by the laser field instead of magnetic field. This parallelism suggests the similarity of effects to electron dynamics between circularly polarized light and magnetic field.  相似文献   

8.
The quantum spin Hall (QSH) effect and the quantum anomalous Hall (QAH) effect in Lieblattice are investigated in the presence of both Rashba spin-orbit coupling (SOC) anduniform exchange field. The Lieb lattice has a simple cubic symmetry, which ischaracterized by the single Dirac-cone per Brillouin zone and the middle flat band in theband structure. The intrinsic SOC is essentially needed to open the full energy gap in thebulk. The QSH effect could survive even in the presence of the exchange field. In terms ofthe first Chern number and the spin Chern number, we study the topological nature and thetopological phase transition from the time-reversal symmetry broken QSH effect to the QAHeffect. For Lieb lattice ribbons, the energy spectrum and the wave-function distributionsare obtained numerically, where the helical edge states and the chiral edge states revealthe non-trivial topological QSH and QAH properties, respectively.  相似文献   

9.
Here, we show that the incompressible Pfaffian state originally proposed for the 5/2 fractional quantum Hall states in conventional two-dimensional electron systems can actually be found in a bilayer graphene at one of the Landau levels. The properties and stability of the Pfaffian state at this special Landau level strongly depend on the magnetic field strength. The graphene system shows a transition from the incompressible to a compressible state with increasing magnetic field. At a finite magnetic field of ~10 T, the Pfaffian state in bilayer graphene becomes more stable than its counterpart in conventional electron systems.  相似文献   

10.
The quantum Hall effect is usually observed when a two-dimensional electron gas is subjected to an external magnetic field, so that their quantum states form Landau levels. In this work we predict that a new phenomenon, the quantum anomalous Hall effect, can be realized in Hg{1-y}Mn{y}Te quantum wells, without an external magnetic field and the associated Landau levels. This effect arises purely from the spin polarization of the Mn atoms, and the quantized Hall conductance is predicted for a range of quantum well thickness and the concentration of the Mn atoms. This effect enables dissipationless charge current in spintronics devices.  相似文献   

11.
We investigate the algebraic structure of flat energy bands a partial filling of which may give rise to a fractional quantum anomalous Hall effect (or a fractional Chern insulator) and a fractional quantum spin Hall effect. Both effects arise in the case of a sufficiently flat energy band as well as a roughly flat and homogeneous Berry curvature, such that the global Chern number, which is a topological invariant, may be associated with a local non-commutative geometry. This geometry is similar to the more familiar situation of the fractional quantum Hall effect in two-dimensional electron systems in a strong magnetic field.  相似文献   

12.
S. Das Sarma  Kun Yang   《Solid State Communications》2009,149(37-38):1502-1506
We apply Laughlin’s gauge argument to analyze the ν=0 quantum Hall effect observed in graphene when the Fermi energy lies near the Dirac point, and conclude that this necessarily leads to divergent bulk longitudinal resistivity in the zero temperature thermodynamic limit. We further predict that in a Corbino geometry measurement, where edge transport and other mesoscopic effects are unimportant, one should find the longitudinal conductivity vanishing in all graphene samples which have an underlying ν=0 quantized Hall effect. We argue that this ν=0 graphene quantum Hall state is qualitatively similar to the high field insulating phase (also known as the Hall insulator) in the lowest Landau level of ordinary semiconductor two-dimensional electron systems. We establish the necessity of having a high magnetic field and high mobility samples for the observation of the divergent resistivity as arising from the existence of disorder-induced density inhomogeneity at the graphene Dirac point.  相似文献   

13.
A striking rf or microwave resonance is a generic feature of electron solid phases of two-dimensional electron systems. These resonances have served to identify and characterize such solids, in the insulator that terminates the series of fractional quantum Hall effects at high magnetic field, in the range of the integer quantum Hall effect, and in bubble phases in the first excited and higher Landau levels.  相似文献   

14.
15.
The conductivity of the high magnetic field insulating phases of two-dimensional electron and hole systems (2DES and 2DHS) of sufficiently low disorder exhibits a resonance at microwave frequency. We present and compare results on this resonance in a moderate disorder 2DES and in a high quality 2DHS. The 2DES exhibits the resonance even though the high- insulator is not reentrant around the fractional quantum Hall effect. The resonance in the 2DHS is much sharper than that in the 2DES, and appears to be inconsistent with the standard model of a two-dimensional harmonic oscillator in a magnetic field.  相似文献   

16.
17.
Tunneling characteristics of a two-dimensional lateral tunnel junction are reported. A pseudogap on the order of Coulomb energy is detected in the tunneling density of states (TDOS) when two identical two-dimensional electron systems are laterally separated by a thin energy barrier. The Coulombic pseudogap remains robust well into the quantum Hall regime until it is overshadowed by the cyclotron gap in the TDOS. The pseudogap is modified by the in-plane magnetic field, demonstrating a nontrivial effect of the in-plane magnetic field on the electron-electron interaction.  相似文献   

18.
We report the observation of a reentrant quantum Hall state at the Landau level filling factor ν=1 in a two-dimensional hole system confined to a 35-nm-wide (001) GaAs quantum well. The reentrant behavior is characterized by a weakening and eventual collapse of the ν=1 quantum Hall state in the presence of a parallel magnetic field component B(∥), followed by a strengthening and reemergence as B(∥) is further increased. The robustness of the ν=1 quantum Hall state during the transition depends strongly on the charge distribution symmetry of the quantum well, while the magnitude of B(∥) needed to invoke the transition increases with the total density of the system.  相似文献   

19.
In this paper, we find that topological insulators with time-reversal symmetryand inversion symmetry featuring two-dimensional quantum spin Hall (QSH) state can be divided into 16 classes, which are characterized by four Z2topological variables ζk=0,1 at four points with high symmetry in the Brillouin zone. We obtain the corresponding edge states for each one of these sixteen classes of QSHs. In addition, it is predicted that massless fermionic excitations appear at the quantum phase transition between different QSH states. In the end, we also briefly discuss the three-dimensional case.  相似文献   

20.
The quantum Hall liquid is a novel state of matter with profound emergent properties such as fractional charge and statistics. The existence of the quantum Hall effect requires breaking of the time reversal symmetry caused by an external magnetic field. In this work, we predict a quantized spin Hall effect in the absence of any magnetic field, where the intrinsic spin Hall conductance is quantized in units of 2(e/4pi). The degenerate quantum Landau levels are created by the spin-orbit coupling in conventional semiconductors in the presence of a strain gradient. This new state of matter has many profound correlated properties described by a topological field theory.  相似文献   

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