Enhancement of subgap conductance in a graphene superconductor junction by valley polarization

We theoretically study the differential conductance of a graphene/graphene superconductor junction, where the valley polarization of Dirac electrons is considered in the nonsuperconducting region. It is shown that the subgap conductance will increase monotonically with the valley-polarization strength when the chemical potential μ is near the Dirac point μ≤ 3?(? is the superconducting gap), whereas it will decrease monotonically when μ is far away from the Dirac point, μ≥ 5?.The former case is induced by the specular Andreev reflection while the retro-reflection accounts for the later result. Our findings may shed light on the control of conductance of a graphene superconductor junction by valley polarization.     

A new type of Andreev reflection

正Andreev reflection (AR) [1] refers to a peculiar quasiparticle reflection process that takes place at the interface between a normal metal and a superconductor.Specifically,an electron impinging from the normal metal is reflected back as a hole,which effectively describes that two electrons in the normal metal penetrate into the superconductor and form a Cooper pair.AR dominates the electron transport below the superconducting gap in the superconductor junctions,which is an important experimental approach for the detection of various properties of electronic systems,such as the pairing symmetry of the unconventional superconductors,the spin polarization of the itinerant electrons and most recently,Majorana zero mode in topological systems.     

Spin-Triplet Andreev Reflection in Ferromagnet/Ferromangnet/s-Wave Superconductor Junctions

Four-component Bogoliubov-de Gennes equations are applied to study the tunnelling conductance spectra G（ E） of half-metallic ferromagnet/ferromagnet/s-wave superconductor tunnel junctions. It is found that only for noncollinear magnetizations, there exists nonzero G（ E） structure within the energy gap, which is a signature of appearance of the novel Andreev reflection and spin-triplet pairing correlations.     

Andreev reflection in three dimensions

正When an electron with negative charge-e is incident from a normal metal to an interface with a superconductor,it may be reflected as a hole with positive charge e at the interface.In such a way,a pair of electrons can be transferred to the superconductor and form a Cooper pair.This process of electron-hole conversion is called Andreev reflection(AR)[1].In two dimensions where the normal metal-superconductor junction is assumed to be along the x direction,     

Resonant Andreev reflection in a normal-metal/quantum-dot/superconductor system with coupled Majorana bound states

Andreev reflection(AR) in a normal-metal/quantum-dot/superconductor(N–QD–S) system with coupled Majorana bound states(MBSs) is investigated theoretically. We find that in the N–QD–S system, the AR can be enhanced when coupling to the MBSs is incorporated. Fano line-shapes can be observed in the AR conductance spectrum when there is an appropriate QD–MBS coupling or MBS–MBS coupling. The AR conductance is always e~2/2h at the zero Fermi energy point when only QD–MBSs coupling is considered. In addition, the resonant AR occurs when the MBS–MBS coupling roughly equals to the QD energy level. We also find that an AR antiresonance appears when the QD energy level approximately equals to the sum of the QD–MBS coupling and the MBS–MBS coupling. These features may serve as characteristic signatures for the probe of MBSs.     

Properties of pseudospin polarization on a graphene-based spin singlet superconducting junction

We investigate theoretically transport characteristics in a graphene-based pseudospinmagnet/superconductor junction, including the s-wave and the d-wave pairing symmetry potential in the superconducting region. It is found that the pseudospin polarization, in sharp contrast to spin polarization in the graphene-based ferromagnet/superconductor junction, holds no influence on the specular Andreev reflection for a negligible Fermi energy. Furthermore, the Fano factor is cru-ially affected by the zero bias state. Therefore, we suggest here that the findings could shed light on the realization of graphene-based pseudospintronics devices and provide a new way to detect the specular Andreev reflection and the zero bias state in the actual experiments.     

Tunneling conductance in quantum wire/insulator/dx2 -y2 + idxy mixed wave superconductor junctions

Using the extended Blonder-Tinkham-Klapwijk (BTK) theory, this paper calculates the tunnelling conductance in quantum wire/insulator/dx2-y2 + idxy mixed wave superconductor (q/I/dx2-y2 + idxy) junctions. That is different from the case in d- and p-wave superconductor junctions. When the angle α between a-axis of the dx2-y2 wave superconductor and the interface normal is π/4, there follows a rather distinctive tunnelling conductance. The zero-bias conductance peak (ZBCP) may or may not appear in the tunnelling conductance. Both the interface potential z and the quasi-particle lifetime factor Γ are smaller, there is no ZBCP. Otherwise, the ZBCP will appear. The position of bias conductance peak (BCP) depends strongly on the amplitude ratio of two components for dx2-y2 + idxy mixed wave. The low and narrow ZBCP may coexist with the BCP in the tunnelling conductance. Using those features in the tunnelling conductance of q/I/dx2-y2 + idxy junctions, it can distinguish dx2-y2 + idxy mixed wave superconductor from d- and p-wave one.     

Spin Polarization and Andreev Conductance through a Diluted Magnetic Semiconductor Quantum Wire with Spin--Orbit Interaction

Spin-dependent Andreev reflection and spin polarization through a diluted magnetic semiconductor quantum wire coupled to normal metallic and superconductor electrodes are investigated using scattering theory. When the spin-orbit coupling is considered, more Andreev conductance steps appear at the same Fermi energy. Magnetic semiconductor quantum wire separates the spin-up and spin-down electrons. The Fermi energy, at which different- spin-state electrons begin to separate, becomes lower due to the effect of the spin-orbit interaction. The spin filter effect can be measured more easily by investigating the Andreev conductance than by investigating the normal conductance.     

Resonance Transport of Graphene Nanoribbon T-Shaped Junctions

We investigate the transport properties of T-shaped junctions composed of armchair graphene nanoribbons of different widths. Three types of junction geometries are considered. The junction conductance strongly depends on the atomic features of the junction geometry. When the shoulders of the junction have zigzag type edges, sharp conductance resonances usually appear in the low energy region around the Dirac point, and a conductance gap emerges. When the shoulders of the junction have armchair type edges, the conductance resonance behavior is weakened significantly, and the metal-metal-metal junction structures show semimetallic behaviors. The contact resistance also changes notably due to the various interface geometries of the junction.     

Magnetic field enhanced single particle tunneling in MoS_2–superconductor vertical Josephson junction

As a prototypical transition-metal dichalcogenide semiconductor, MoS_2 possesses strong spin–orbit coupling, which provides an ideal platform for the realization of interesting physical phenomena. Here, we report the magnetotransport properties in NbN–MoS_2–NbN sandwich junctions at low temperatures. Above the critical temperature around ～11 K, the junction resistance shows weak temperature dependence, indicating a tunneling behavior. While below ～11 K, nearly zero junction resistance is observed, indicating the superconducting state in the MoS_2 layer induced by the superconducting proximity effect. When a perpendicular magnetic field ～1 T is applied, such proximity effect is suppressed, accompanying with insulator-like temperature-dependence of the junction resistance. Intriguingly, when further increasing the magnetic field, the junction conductance is significantly enhanced, which is related to the enhanced single particle tunneling induced by the decrease of the superconducting energy gap with increasing magnetic fields. In addition, the possible Majorana zero mode on the surface of MoS_2 can further lead to the enhancement of the junction conductance.     

Influence of the in-plane magnetic field on the Andreev conductance of a superconductor–insulator–normal metal structure

Pronounced conductance due to electrons experiencing Andreev reflection from a superconducting condensate has been observed in superconductor (aluminum)–insulator (aluminum oxide)–normal metal (copper) tunnel junctions at low voltages, along with single-electron tunneling. It has been discovered experimentally that the collective current is suppressed in the magnetic field parallel to the tunnel junction plane and the Andreev conductance decreases nearly twofold in a field of ～20–30 mT.     

镁基合金自由枝晶生长的相场模拟研究

利用定量相场模型, 以Mg-0.5 wt.%Al合金为例模拟了基面((0001)面)内镁基合金的等温自由枝晶生长过程. 通过研究该合金体系数值模拟的收敛性, 获得了最优化值耦合参数λ = 5.5及网格宽度Δx/W₀ = 0.4, 并在该参数下系统研究了各向异性强度和过饱和度对枝晶尖端生长速度、尖端曲率半径、Péclet数及稳定性常数σ^* 的影响. 结果表明, 由微观可解性理论得到的稳定性系数σ^* 与ε₆ 拟合值σ^*≅ ε₆ ^1.81905, 更接近理想值σ ^* (ε₆) ≅ε₆ ^1.75. 此外, 当过饱和度Ω < 0.6时, 稳定性系数σ ^* 不随ε₆ 的变化而变化, 而当Ω > 0.6时, 稳定性系数σ ^* 随着ε₆ 的增加而减小. 这反映了枝晶的生长由扩散控制向动力学控制的转变. 随着过饱和度的增加, 枝晶形貌由雪花状枝晶向圆状枝晶转变.     

基于太极形介质柱六角光子晶体禁带特性研究

提出了一种新型的非对称性散射体的二维六角晶格光子晶体结构–-太极形介质柱光子晶体. 利用平面波展开法从理论研究这种光子晶体结构的能带特性以及结构参数对完全禁带的影响. 研究表明:散射体对称性的打破, TE模和TM模能带宽度和数目都会有所增加, 有益于获得更宽的完全禁带以及更多条完全禁带.通过参数优化, 发现在ε = 17, R=0.38 μm, r=0.36R, θ = 0° 时, 获得最大完全带隙宽度0.0541(ωa/2πc); 在ε = 16, R=0.44, r=0.2R, θ = 0°时, 光子晶体完全带隙数目最多达到8条. 关键词： 光子晶体 禁带 平面波展开     

有限深两层流体中内孤立波造波实验及其理论模型

将置于大尺度密度分层水槽上下层流体中的两块垂直板反方向平推, 以基于 Miyata-Choi-Camassa (MCC)理论解的内孤立波诱导上下层流体中的层平均水平速度作为其运动速度, 发展了一种振幅可控的双推板内孤立波实验室造波方法. 在此基础上, 针对有限深两层流体中定态内孤立波 Korteweg-de Vries (KdV), 扩展KdV (eKdV), MCC和修改的Kdv (mKdV)理论的适用性条件等问题, 开展了系列实验研究.结果表明, 对以水深为基准定义的非线性参数ε 和色散参数μ, 存在一个临界色散参数μ₀, 当μ < μ₀ 时, KdV理论适用于ε ≤μ 的情况, eKdV理论适用于μ < ε ≤√μ 的情况, 而MCC理论适用于ε > √μ 的情况, 而且当μ ≥μ₀ 时MCC理论也是适用的.结果进一步表明, 当上下层流体深度比并不接近其临界值时, mKdV理论主要适用于内孤立波振幅接近其理论极限振幅的情况, 但这时MCC理论同样适用.本项研究定量地表征了四类内孤立波理论的适用性条件, 为采用何种理论来表征实际海洋中的内孤立波特征提供了理论依据. 关键词： 两层流体 内孤立波 双板造波 临界色散参数     

Andreev reflection and bound states in topological insulator based planar and step Josephson junctions

A superconductor-topological insulator-superconductor (S/TI/S) junction having normal region at angle θ is studied theoretically to investigate the junction angle dependency of the Andreev reflection and the formation of the Andreev bound states in the step and planar S/TI/S structures. It is found that the Andreev reflection becomes θ dependent only in the presence of the potential barrier at the TI/S interface. In particular, the step and planar TI/S junction have totally different conductive behavior with bias voltage and potential barrier in the regime of retro and specular Andreev reflection. Interestingly, we find that the elliptical cross section of Dirac cone, an important feature of topological insulator with step surface defect, affects the Fabry-Perot resonance of the Andreev reflection induced Andreev bound states (which become Majorana zero energy states at low chemical potential) in the step S/TI/S structure. Unlike the usual planar S/TI/S structures, we find these ellipticity affected Andreev bound states lead to non-monotonic Josephson super-current in the step S/TI/S structure whose non-monotonicity can be controlled with the use of the potential barrier, which may find applications in nanoelectronics.     

Spin transport properties in ferromagnet/superconductor junctions on topological insulator

The spin-dependent Andreev reflection is investigated theoretically by analyzing the electronic transport in a thin-film topological insulator (TI) ferromagnet/superconductor (FM/SC) junction. The tunneling conductance and shot noise are calculated based on the Dirac-Bogoliubov-de Gennes equation and Blonder-Tinkham-Klapwijk theory. It is found that the magnetic gap in ferromagnet can enhance the Andreev retro-reflection but suppress the specular Andreev reflection. The gate potential applied to the electrode on top of superconductor can enhance the two types of reflections. There is a transition between the two types of reflections at which both the tunneling conductance and differential shot noise become zero. These results provide a method to realize and detect experimentally the intra-band specular Andreev reflection in thin film TI-based FM/SC structures.     

一端附壁高分子链的Monte Carlo研究

采用简立方格点上的Monte Carlo模拟,研究一端被无限大不可穿透平面壁吸附的高分子链的均方末端距<R²>,以及高分子链的质量中心到平面吸附壁的平均距离<Z>,与链长N、参数u(u=e^-ε/kT,ε是链骨架原子间的相互作用能量,k是玻耳兹曼常数,T是热力学温度)的关系。结果表明:<R²>和<Z>都服从标度律,<R²>=αN^γ,<Z>=βN^η,其中,γ、η、α、β都是u的函数;u从1减小到0.5,则γ从1.01增大到1.19,η从0.51增大到0.60.     

Conductance of SIN and SIS junctions with chiral superconductors

Low-temperature conductance peaks due to the surface Andreev bound states in SIN and SIS junctions with chiral superconductors are considered. It is shown that, in SIN junctions, the conductance as a function of voltage, G(V), is highly sensitive to the dependence of the barrier transparency on the direction of the quasiparticle momentum. A weak magnetic field applied to the junction shifts the conductance peaks. In symmetric SIS junctions, the presence of chiral levels of Andreev bound states on both sides of the barrier gives rise to a conductance peak at V=0.     

两端线型双量子点分子Aharonov-Bohm干涉仪电输运

设计一个两端线型双量子点分子Aharonov-Bohm (A-B)干涉仪. 采用非平衡格林函数技术, 理论研究无含时外场作用下的体系电导和引入含时外场作用下的体系平均电流. 在不考虑含时外场时, 调节点间耦合强度或磁通可以诱导电导共振峰劈裂. 控制穿过A-B干涉仪磁通的有无, 实现了共振峰电导数值在0与1之间的数字转换, 为制造量子开关提供了一个新的物理方案. 同时借助磁通和Rashba自旋轨道相互作用, 获得了自旋过滤. 当体系引入含时外场时, 平均电流曲线展示了旁带效应. 改变含时外场的振幅, 实现了体系平均电流的大小与位置的有效控制, 而调节含时外场的频率, 则可以实现平均电流峰与谷之间的可逆转换. 通过调节磁通与Rashba自旋轨道相互作用, 与自旋相关的平均电流亦得到有效控制. 研究结果为开发利用耦合多量子点链嵌入A-B 干涉仪体系电输运性质提供了新的认知. 上述结果可望对未来的量子器件设计与量子计算发挥重要的指导作用.