Bulk- and surface-sensitive high-resolution photoemission study of two mott-hubbard systems: SrVO3 and CaVO3

We study the electronic structure of Mott-Hubbard systems SrVO3 and CaVO3 with bulk and surface-sensitive high-resolution photoemission spectroscopy, using a vacuum ultraviolet laser, synchrotron radiation, and a discharge lamp (hv = 7-21 eV). A systematic suppression of the density of states (DOS) within approximately 0.2 eV of the Fermi level (EF) is found on decreasing photon energy, i.e., on increasing bulk sensitivity. The coherent band in SrVO3 and CaVO3 is shown to consist of surface and bulk-derived features, separated in energy. The stronger distortion on surface of CaVO3 compared to SrVO3 leads to a higher surface metallicity in the coherent DOS at EF, consistent with recent theory.     

Valence surface electronic states on Ge(001)

The optical, electrical, and chemical properties of semiconductor surfaces are largely determined by their electronic states close to the Fermi level (E{F}). We use scanning tunneling microscopy and density functional theory to clarify the fundamental nature of the ground state Ge(001) electronic structure near E{F}, and resolve previously contradictory photoemission and tunneling spectroscopy data. The highest energy occupied surface states were found to be exclusively back bond states, in contrast to the Si(001) surface, where dangling bond states also lie at the top of the valence band.     

Electronic structure of La (0001) thin films on W (110) studied by photoemission spectroscopy and first principle calculations

Surface states that have a dz2 symmetry around the center of the surface Brillouin zone(BZ)have been regarded common in closely-packed surfaces of rare-earth metals.In this work,we report the electronic structure of dhcp La(0001)thin films by ultrahigh energy resolution angle-resolved photoemission spectroscopy(ARPES)and first principle calculations.Our first principle analysis is based on the many-body approach,therefore,density function theory(DFT)combined with dynamic mean-field theory(DMFT).The experimentally observed Fermi surface topology and band structure close to the Fermi energy qualitatively agree with first principle calculations when using a renormalization factor of between 2 and 3 for the DFT bands.Photon energy dependent ARPES measurements revealed clear kZ dependence for the hole-like band around the BZ center,previously regarded as a surface state.The obtained ARPES results and theoretical calculations suggest that the major bands of dhcp La(0001)near the Fermi level originate from the bulk La 5d orbits as opposed to originating from the surface states.     

Photoemission study of the carrier bands in Bi(111)

We present high-resolution photoemission data from the Bi(111)-surface. The electronic structure of the semimetal close to the Fermi level has been found to change dramatically with respect to the well established bulk band structure. The Fermi surfaces observed for the electron and hole bands resemble those of the next group-V element, antimony, probably as a consequence of surface relaxation. This results in a relatively high surface charge density. The observed temperature dependence of the electron Fermi energy confirms this result. Received 8 June 2000     

一种由自由电子能带模型计算费米能级的方法

对面心立方（fcc)、体心立方（bcc)和六角密堆积（hcp)三种不同结构的晶体,在假设它们的原胞中包含8个价电子并将价电子近似为自由电子的情况下,采用“自由电子气理论”和“自由电子能带模型”,研究其根据费米球确定的费米能级EF与根据自由电子能带模型计算的平均键能Em。研究结果表明,由自由电子能带模型计算所得3种不同结构晶体（因而电子密度也不一样）的平均键能Em等于各自自由电子系统的费米能级EF。平均键能Em是我们在异质结带阶理论计算中建议的一种参考能级,研究结果在深化对平均键能Em物理实质认识的同时,提供了一种借助于自由电子能带模型计算自由电子系统费米能级EF的新方法。     

Continuous transition from two- to one-dimensional states in Si(111)-( 5x2)-Au

A strong, gold-induced surface state is found on single-domain Si(111)-(5x2)-Au at low temperatures. Its band dispersion is one dimensional near the Fermi level E(F) and gradually becomes two dimensional towards the bottom of the band, thus providing a model for a continuous transition in dimensionality. A Peierls-like gap is observed in the one-dimensional portion of the band near E(F).     

Angle-resolved photoemission study of the cobalt oxide superconductor Na(x)CoO(2) x yH(2)O: observation of the Fermi surface

The cobalt oxide superconductor Na(x)CoO(2) x yH(2)O is studied by angle-resolved photoemission spectroscopy. We report the Fermi surface (FS) topology and electronic structure near the Fermi level (E(F)) in the normal state of Na(x)CoO(2) x yH(2)O. Our result indicates the presence of the hexagonal FS centered at the Gamma point, while the small pocket FSs along Gamma-K direction are absent, similar to Na(x)CoO(2). The top of the e(g)(') band, which is expected in band calculations to form the small pocket FSs, extends to within approximately 30 meV below E(F), closer to E(F) than in Na(x)CoO(2). We discuss its possible role in superconductivity, comparing with other experimental and theoretical results.     

The origin of enhanced magnetization in strained gadolinium

From combined spin-resolved photoemission and spin-polarized inverse photoemission, the experimental spin-resolved band structure of gadolinium on Mo(112) has been constructed. The occupied spin dependent electronic structure near the Fermi level is dominated by shallow dispersion of a spin minority band with considerable surface weight. There is an occupied spin majority bulk band straddling the Fermi level whose spin minority counterpart remains largely on the unoccupied side of the Fermi level. This results in large spin majority weight in the occupied band structure relative to spin minority.     

Strain and high temperature superconductivity: unexpected results from direct electronic structure measurements in thin films

Angle-resolved photoemission spectroscopy reveals very surprising strain-induced effects on the electronic band dispersion of epitaxial La(2-x)Sr(x)CuO(4-delta) thin films. In strained films we measure a band that crosses the Fermi level (E(F)) well before the Brillouin zone boundary. This is in contrast to the flat band reported in unstrained single crystals and in our unstrained films, as well as in contrast to the band flattening predicted by band structure calculations for in-plane compressive strain. In spite of the density of states reduction near E(F), the critical temperature increases in strained films with respect to unstrained samples. These results require a radical departure from commonly accepted notions about strain effects on high temperature superconductors, with possible general repercussions on superconductivity theory.     

Orbital dependence of the fermi liquid state in Sr2RuO4

We have used angle-resolved photoemission spectroscopy to determine the bulk electronic structure of Sr(2)RuO(4) above and below the Fermi liquid crossover near 25 K. Our measurements indicate that the properties of the system are highly orbital dependent. The quasi-2D gamma band displays Fermi liquid behavior while the remaining low energy bands show exotic properties consistent with quasi-1D behavior. In the Fermi liquid state below 25 K, the gamma band dominates the electronic properties, while at higher temperatures the quasi-1D beta and alpha bands become more important.     

Lifshitz transition across the Ag/Cu(111) superlattice band gap tuned by interface doping

The two-dimensional, free-electron-like band structure of noble metal surfaces can be radically transformed by appropriate nanostructuration. A case example is the triangular dislocation network that characterizes the epitaxial Ag/Cu(111) system, which exhibits a highly featured band topology with a full band gap above E(F) and a hole-pocket-like Fermi surface. Here we show that controlled doping of the Ag/Cu(111) interface with Au allows one to observe a complete Lifshitz transition at 300 K; i.e., the hole pockets fill up, the band gap entirely shifts across E(F), and the Fermi surface becomes electron-pocket-like.     

Suppression of near-Fermi level electronic states at the interface in a LaNiO3/SrTiO3 superlattice

Standing-wave-excited photoemission is used to study a SrTiO3/LaNiO3 superlattice. Rocking curves of core-level and valence band spectra are used to derive layer-resolved spectral functions, revealing a suppression of electronic states near the Fermi level in the multilayer as compared to bulk LaNiO3. Further analysis shows that the suppression of these states is not homogeneously distributed over the LaNiO3 layers but is more pronounced near the interfaces. Possible origins of this effect and its relationship to a previously observed metal-insulator-transition in ultrathin LaNiO3 films are discussed.     

Electronic Structure of FeSe Monolayer Superconductors: Shallow Bands and Correlations

Electronic spectra of typical single FeSe layer superconductor—FeSe monolayer film on SrTiO₃ substrate (FeSe/STO) obtained from ARPES data reveal several puzzles: what is the origin of shallow and the so called “replica” bands near the M-point and why the hole-like Fermi surfaces near the Γ-point are absent. Our extensive LDA+DMFT calculations show that correlation effects on Fe-3d states can almost quantitatively reproduce rather complicated band structure, which is observed in ARPES, in close vicinity of the Fermi level for FeSe/STO. Rather unusual shallow electron-like bands around the M-point in the Brillouin zone are well reproduced. Detailed analysis of the theoretical and experimental quasiparticle bands with respect to their origin and orbital composition is performed. It is shown that for FeSe/STO system the LDA calculated Fe-3d _xy band, renormalized by electronic correlations within DMFT gives the quasiparticle band almost exactly in the energy region of the experimentally observed “replica” quasiparticle band at the Mpoint. However, correlation effects alone are apparently insufficient to eliminate the hole-like Fermi surfaces around the Γ-point, which are not observed in most ARPES experiments. The Fermi surfaces remain here even if Coulomb and/or Hund interaction strengths are increased while overall agreement with ARPES worsens. Increase of number of electrons also does not lead to vanishing of this Fermi surface and makes agreement of LDA+DMFT results with ARPES data much worse. We also present some simple estimates of “forward scattering” electron-optical phonon interaction at FeSe/STO interface, showing that it is apparently irrelevant for the formation of “replica” band in this system and significant increase of superconducting T _c .     

Fermi surface and van Hove singularities in the itinerant Metamagnet Sr3Ru2O7

The low-energy electronic structure of the itinerant metamagnet Sr3Ru2O7 is investigated by angle-resolved photoemission and density-functional calculations. We find well-defined quasiparticle bands with resolution-limited linewidths and Fermi velocities up to an order of magnitude lower than in single layer Sr2RuO4. The complete topography, the cyclotron masses, and the orbital character of the Fermi surface are determined, in agreement with bulk sensitive de Haas-van Alphen measurements. An analysis of the dxy band dispersion reveals a complex density of states with van Hove singularities near the Fermi level, a situation which is favorable for magnetic instabilities.     

VC(001)弛豫表面构型与电子结构第一性原理研究

用第一性原理方法对VC(001)清洁表面的构型和电子结构进行了详细研究，与TiC(001)面类似，VC(001)面弛豫后形成表面皱褶，其表层V原子和C原子分别朝体相和真空方向移动. 能带计算结果表明，过渡金属碳化物(001)面的能带结构符合刚性带理论模型. 对于VC(001)面，表面态主要处在-30eV附近，其主要成分为表层C原子的2pz轨道. 此外，以表层V原子的3d轨道成分为主的表面态出现在费米能级附近，由于这些表面态以表面法线方向的轨道(3d２z和3dxz/dyz)为主要成分，因此在表面反应中将起到重要作用，从而体现出与TiC(001)面不同的反应性质. 关键词： 过渡金属碳化物 表面态 能带结构     

ARPES on Na0.6CoO2: Fermi surface and unusual band dispersion

The electronic structure of single crystals Na0.6CoO2, which are closely related to the superconducting Na0.3CoO2.yH(2)O (T(c) approximately 5 K), is studied by angle-resolved photoelectron spectroscopy. While the measured Fermi surface (FS) is consistent with the large FS enclosing the Gamma point from the band theory, the predicted small FS pockets near the K points are absent. In addition, the band dispersion is found to be highly renormalized, and anisotropic along the two principal axes (Gamma-K, Gamma-M). Our measurements also indicate that an extended flatband is formed slightly above E(F) along Gamma-K.     

Band Structures of Ultrathin Bi(110) Films on Black Phosphorus Substrates Using Angle-Resolved Photoemission Spectroscopy

The band structures of two-monolayer Bi(110) films on black phosphorus substrates are studied using angleresolved photoemission spectroscopy. Within the band gap of bulk black phosphorus, the electronic states near the Fermi level are dominated by the Bi(110) film. The band dispersions revealed by our data suggest that the orientation of the Bi(110) film is aligned with the black phosphorus substrate. The electronic structures of the Bi(110) film strongly deviate from the band calculations of the free-standing Bi(110) film, suggesting that the substrate can significantly affect the electronic states in the Bi(110) film. Our data show that there are no non-trivial electronic states in Bi(110) films grown on black phosphorus substrates.     

Chemically mediated quantum criticality in NbFe2

Laves-phase Nb(1+c)Fe(2-c) is a rare itinerant intermetallic compound exhibiting magnetic quantum criticality at c(cr)～1.5%Nb excess; its origin, and how alloying mediates it, remains an enigma. For NbFe(2), we show that an unconventional band critical point above the Fermi level E(F) explains most observations and that chemical alloying mediates access to this unconventional band critical point by an increase in E(F) with decreasing electrons (increasing %Nb), counter to rigid-band concepts. We calculate that E(F) enters the unconventional band critical point region for c(cr) > 1.5%Nb and by 1.74%Nb there is no Nb site-occupation preference between symmetry-distinct Fe sites, i.e., no electron-hopping disorder, making resistivity near constant as observed. At larger Nb (Fe) excess, the ferromagnetic Stoner criterion is satisfied.     

Raising Bi-O bands above the Fermi energy level of hole-doped Bi2Sr2CaCu2O8+delta and other cuprate superconductors

The Fermi surface (FS) of Bi2Sr2CaCu2O8+delta (Bi2212) predicted by band theory displays Bi-related pockets around the (pi, 0) point, which have never been observed experimentally. We show that when the effects of hole doping either by substituting Pb for Bi or by adding excess O in Bi2212 are included, the Bi-O bands are lifted above the Fermi energy (E(F)) and the resulting first-principles FS is in remarkable accord with measurements. With decreasing hole doping the Bi-O bands drop below and the system self-dopes below a critical hole concentration. Computations on other Bi- as well as Tl- and Hg-based compounds indicate that lifting of the cation-derived band with hole doping is a general property of the electronic structures of the cuprates.     

Intrinsic electron accumulation at clean InN surfaces

The electronic structure of clean InN(0001) surfaces has been investigated by high-resolution electron-energy-loss spectroscopy of the conduction band electron plasmon excitations. An intrinsic surface electron accumulation layer is found to exist and is explained in terms of a particularly low Gamma-point conduction band minimum in wurtzite InN. As a result, surface Fermi level pinning high in the conduction band in the vicinity of the Gamma point, but near the average midgap energy, produces charged donor-type surface states with associated downward band bending. Semiclassical dielectric theory simulations of the energy-loss spectra and charge-profile calculations indicate a surface state density of 2.5 (+/-0.2)x10(13) cm(-2) and a surface Fermi level of 1.64+/-0.10 eV above the valence band maximum.