Si–Si optical phonon behavior in localized Si clusters of Si<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Ge<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript> alloy nanocrystals

Raman spectra acquired from Si _x Ge_1−x -nanocrystal-embedded SiO₂ films show dependence of the Si–Si optical phonon frequency on Si content. The frequency upshifts, and peak intensity increases as the silicon concentration increases. For a given Si content, the frequency remains unchanged with annealing temperature. Spectral analysis and density functional theory calculation reveal that the optical Si–Si phonon is related to the formation of localized Si clusters surrounded by Si/Ge atomic layers in the Si _x Ge_1−x nanocrystals and the intensity enhancement arises from the larger cluster size. The synergetic effect of surface tensile stress and phonon confinement determines the Si–Si optical phonon behavior.     

A tunable green alkaline-earth silicon-oxynitride solid solution (Ca1? x Sr x )Si2O2N2:Eu2+ and its application in LED

A series of (Ca_1−x−y Sr _x )Si₂O₂N₂:yEu²⁺ (x=0.0–0.97, y=0.03) phosphors were synthesized by high-temperature solid-state reaction. The XRD patterns confirm the formation of a solid solution of (Ca_1−x−y Sr _x )Si₂O₂N₂:yEu²⁺. An intense tunable green light is observed with the increasing ratio of Sr/Ca. With an increase in x, the excitation and emission spectra show a redshift and blueshift, respectively, due to large centroid shift and small Stokes shift. The temperature dependent luminescence is also investigated in the temperature range of 77–450 K. The Huang–Rhys factor and the thermal-quenching temperature are determined. Intense green LEDs were successfully fabricated based on the (Ca_1−x−y Sr _x )Si₂O₂N₂:yEu²⁺ phosphor and near-ultraviolet (∼395 nm) GaN/blue (460 nm) InGaN chips. All the results indicate that the solid solution (Ca_1−x−y Sr _x )Si₂O₂N₂:yEu²⁺ is a promising phosphor applicable to near-UV and blue LEDs for solid-state lighting.     

Electron-hole liquid and excitonic molecules in quasi-two-dimensional SiGe layers of Si/SiGe/Si heterostructures

The electron-hole liquid (EHL) in SiGe layers of Si/Si_{1 − x} Ge _x /Si quantum-confinement heterostructures is discovered. It is composed of quasi-two-dimensional holes in the quantum well formed by the SiGe layer and quasi-three-dimensional electrons, which occupy a wider region of space centered on this layer. The densities of electrons and holes in the EHL are determined to be p ₀ ≈ 8.5 × 10¹¹ cm⁻² and n ₀ ≈ 4.8 × 10¹⁸ cm⁻³, respectively. It is demonstrated that the gas phase consists of excitons and excitonic molecules. The conditions on the band parameters of the structure under which the formation of the EHL of this kind and biexcitons is possible are formulated.     

Influence of the misfit of the crystal chemical parameters of Na and Li cations on the dielectric properties of NaNbO<Subscript>3</Subscript>-LiNbO<Subscript>3</Subscript> solid solutions

It is established that the Curie-Weiss temperature of Na_{1 − x} Li _x NbO₃ solid solutions determined by extrapolation of linear portions of the temperature dependence of the reciprocal of the permittivity ɛ⁻¹ from the cubic phase sharply increases with x, although the temperature of the ɛ(T) maximum decreases. It is shown in terms of a simple theoretical model that the experimentally observed change in the dielectric properties of Na_{1 − x} Li _x NbO₃ is well explained under the assumption of formation of a dipole system due to the displacement of Li cations from the center of the cubooctahedral cavity because of the significant steric misfit between the Na and Li cations.     

AlInGaN 310 nm ultraviolet metal-insulator-semiconductor sensors with photo-chemical-vapor-deposition SiO2 cap layers

Al_0.25In_0.04Ga_0.71N 310 nm near solar blind ultraviolet (UV) metal-insulator-semiconductor (MIS) sensors with different SiO₂ cap layer thickness were successfully fabricated. With appropriate SiO₂ layer thickness, the dark current of AlInGaN sensors was notably suppressed from 1.88 × 10⁻⁶ to 1.91 × 10⁻⁹ A, and the photo-generated carriers still could reach the electrodes by tunneling through the thin SiO₂ layer under the illumination. It could be clearly seen that cut-off occurred at around 300/310 nm while the responses above the bandgap were flat.     

Chemical and phase compositions of silicon oxide films with nanocrystals prepared by carbon ion implantation

The chemical and phase compositions of silicon oxide films with self-assembled nanoclusters prepared by ion implantation of carbon into SiO _x (x < 2) suboxide films with subsequent annealing in a nitrogen atmosphere have been investigated using X-ray photoelectron spectroscopy in combination with depth profiling by ion sputtering. It has been found that the relative concentration of oxygen in the maximum of the distribution of implanted carbon atoms is decreased, whereas the relative concentration of silicon remains almost identical over the depth in the layer containing the implanted carbon. The in-depth distributions of carbon and silicon in different chemical states have been determined. In the regions adjacent to the layer with a maximum carbon content, the annealing results in the formation of silicon oxide layers, which are close in composition to SiO₂ and contain silicon nanocrystals, whereas the implanted layer, in addition to the SiO₂ phase, contains silicon oxide species Si²⁺ and Si³⁺ with stoichiometric formulas SiO and Si₂O₃, respectively. The film contains carbon in the form of SiC and elemental carbon phases. The lower limit of the average size of silicon nanoclusters has been estimated as ∼2 nm. The photoluminescence spectra of the films have been interpreted using the obtained results.     

Spin fluctuation effects in substituted CeRu2Si2 and YbPd2Si2 alloys

Effects of chemical substitution in CeRu₂Si₂, a well-studied heavy fermion system and YbPd₂Si₂ have been investigated through magnetic susceptibility and x-ray diffraction in the systems CeRu _x Si₂, CeRu_2−x Os _x Si₂, CeRu₂Si_2−x Ge _x and YbPd₂Si_2−x Ge _x . Replacing silicon by germanium generates normal chemical pressure effect, namely, Ce and Yb atoms in CeRu₂Si₂ and YbPd₂Si₂ became more and less magnetic respectively. With increasing Ge concentration, CeRu₂Si_2−x Ge _x exhibits larger susceptibility at low temperature, goes to an antiferromagnetic state and finally becomes ferromagnetic. In YbPd₂Si_2−x Ge _x , increasing Ge concentration drives Yb atoms to more divalent state. Electronic effects are more pronounced in CeRu_2−x Os _x Si₂ though CeRu₂Si₂ and CeOs₂Si₂ have very nearly the same lattice parameters. It is conjectured that CeRu₂Si_2−x Ge _x may be the first Ce-based heavy fermion having a magnetic ground state. The authors felicitate Prof. D S Kothari on his eightieth birthday and dedicate this paper to him on this occasion.     

Study of the interface Si-nc/SiO2 by infrared spectroscopic ellipsometry and X-ray photoelectron spectroscopy

SiO_x films (1<x<2), 0.5 μm thick, have been elaborated by electron-gun evaporation. A thermal annealing of these films induced a phase separation leading to the formation of Si nanocrystals embedded in a SiO₂ matrix. These films have been studied by infrared spectroscopic ellipsometry and by X-ray photoelectron spectroscopy (XPS). The effective dielectric function of the thin films has been extracted in the 600–5000 cm⁻¹ range which allowed us to deduce the dielectric function of the matrix surrounding the Si-nc. A study of the Transverse Optical (TO) vibration mode has revealed the presence of SiO_x into the matrix. Before XPS measurements, the films have been etched in fluorhydric acid to remove the superficial SiO₂ layer formed during air exposure. The Si 2p core-level emission has been recorded. The decomposition of the Si 2p peak into contributions of the usual five tetrahedrons Si-(Si_4−nO_n) (n=0–4) has also revealed the presence of a SiO_x phase. Consistency between infra-red and XPS results is discussed.     

Anisotropy of amorphous nanogranular composites CoNbTa-SiO<Subscript><Emphasis Type="Italic">n</Emphasis></Subscript> and CoFeB-SiO<Subscript><Emphasis Type="Italic">n</Emphasis></Subscript>

A comparative investigation of the magnetic properties of amorphous nanogranular composites (Co₄₁Fe₃₉B₂₀) _x (SiO _n )_{100 − x} and (Co₈₆Nb₁₂Ta₂) _x (SiO _n )_{100 − x} has been performed in the subpercolation region at temperatures in the range 4.2–300 K. The thermomagnetic dependences in the range 4.2–300 K and the processes of magnetization reversal and remanent magnetization relaxation at liquid-helium temperatures have been studied. It has been established that the average anisotropy constants of amorphous nanograins are equal to 3.6–7.0 kJ/m³ for the (Co₄₁Fe₃₉B₂₀) _x (SiO _n )_{100 − x} composites and 5–8 kJ/m³ for the (Co₈₆Nb₁₂Ta₂) _x (SiO _n )_{100 − x} composites. The fundamental differences in the concentration dependences of the anisotropy constant K _eff and the coercive force H _C have been revealed for the two systems under investigation. It has been demonstrated that, as the concentration of the metal phase increases, the quantities K _eff and H _C increase for the (Co₈₆Nb₁₂Ta₂) _x (SiO _n )_{100 − x} composites and decrease for the (Co₄₁Fe₃₉B₂₀) _x (SiO _n )_{100 − x} composites.     

Optically active Er3+ centers in Si/Si1 ? x Ge x structures under optical pumping

The Si/Si_{1 − x} Ge _x :Er/Si heterostructures, which are of interest for laser applications, have been investigated. The types of optically active Er³⁺ centers making a dominant contribution to the photoluminescence response of the structures studied are analyzed and their relationship with the parameters of the Si_{1 − x} Ge _x :Er heterolayer and the post-growth annealing conditions is shown. On the basis of the PL kinetic analysis of the structures with an isolated type of optically active Er³⁺ centers, it is concluded that population inversion of Er³⁺ ion states can be obtained under optical pumping and the effect of nonradiative recombination channels in Si_{1 − x} Ge _x :Er heterolayers on the excitation efficiency of Er centers and the conditions for population inversion is shown. Original Russian Text ? L.V. Krasilnikova, N.A. Baidakova, M.V. Stepikhova, Z.F. Krasilnik, V.Yu. Chalkov, V.G. Shengurov, 2009, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2009, Vol. 73, No. 1, pp. 103–108.     

Dielectric properties of perovskite ceramics of (1–x)BiFeO3 ? x(KBi)1/2TiO3 (0.40 < x < 0.85) solid solutions from impedance spectroscopy data

The dielectric properties of the ceramics of (1 − x)BiFeO₃ − x(KBi)_1/2TiO₃ (0.40 < x < 0.85) solid solutions with an orthorhombic structure have been studied using impedance spectroscopy in the frequency range 25–10⁶ Hz at different temperatures. It has been shown that these solid solutions undergo a diffuse ferroelectric phase transition. The Curie temperature is found to be in the range 620–640 K. The activation energies of dielectric polarization relaxation (δE _M ) and dc charge carriers (ΔE _dc) are determined. It has been established that, in the vicinity of 460 K, ΔE _dc increases jumpwise as the temperature increases.     

Magnetic and electrical properties of Mg1−x CuxO solid solutions and magnetic shielding in Cu-Mg1−x CuxO structures

Mg_1−x Cu_xO solid solutions having an NaCl structure with 0⩽x⩽0.20 are synthesized and Cu-Mg_1−x Cu_xO structures are prepared for superconductivity studies. The magnetic susceptibility χ, electron paramagnetic resonance (EPR), and electrical conductivity of the solid solutions are studied at temperatures of 5–550 K. It is shown that χ ⁻¹(T) obeys the Curie-Weiss law with a paramagnetic Curie temperature Θ close to zero and an effective magnetic moment μ _eff=1.9 μ _B, close to the 1.73 μ _B of a Cu²⁺ ion with spin S=1/2. The width ΔH of the EPR line depends weakly on temperature and increases as x is raised. The volume narrowing of the EPR linewidth ΔH is used to estimate the exchange interaction parameter, 3×10⁻⁴ eV. The g-factor is close to 2 and is temperature independent. The electrical conductivity of Mg_1−x Cu_xO at T=300 K is ≈10⁻¹¹–10⁻¹² Ω⁻¹ cm⁻¹ for x=0 and increases to 10⁻⁵–10⁻⁶ Ω⁻¹ cm⁻¹ for x=0.15–0.20. The conductivity is p-type. Magnetic shielding is observed in Cu-Mg_1−x Cu_xO structures with x=0.15 and 0.20. The possible connection of this phenomenon with interference superconductivity in the contact layer of the structure is discussed. Fiz. Tverd. Tela (St. Petersburg) 41, 293–296 (February 1999)     

UV excitable Y2? x ? y Gd y SiO5:Ce x phosphors for cool white light emission

Cool white light was realized in Y_2−x−y Gd _x SiO₅: Ce _y phosphor under near UV excitation, due to the occupation Ce³⁺ in Y³⁺ 1st and 2nd site, synthesized using solid state carbothermal reduction route. SEM with elemental analysis show the existence of Gd in Y₂SiO₅:Ce enhances the particles size in comparison to Y₂SiO₅:Ce phosphors alone. Gd³⁺ (0.00≤x≤0.75) and Ce³⁺ (0.02≤y≤0.10) concentration was optimized to 0.50 and 0.08 in Y₂SiO₅, respectively. The CIE chromaticity color coordinates (0.24, 0.20) are close to cool white light value which could be useful for the fabrication of cool white LED.     

Dielectric nonlinearity of crystalline Li2−x NaxGe4O9 (x≈0.23)

The dielectric nonlinearity of ferroelectric Li_2−x Na_xGe₄O₉ (x≈0.23) crystals is measured in the neighborhood of the phase transition temperatures. The magnitude of the nonlinear coefficient β is estimated from the shift in T _c and the reduction in ɛ _max under the influence of E ₌, from the dielectric nonlinearity in the paraphase, and from the temperature dependence of P _s in crystalline Li_2−x Na_xGe₄O₉ (x≈0.23). The resulting values of β are 1.87, 1.26, 2.17, and 1.17×10⁻⁹ (CGSE cm²)⁻², respectively. The mechanism for the phase transition in crystalline Li_2−x Na_xGe₄O₉ (x≈0.23) is discussed. Fiz. Tverd. Tela (St. Petersburg) 41, 1070–1072 (June 1999)     

Dielectric spectroscopy of PbZr1 ? xTixO3 solid solutions (0.495 ≤ x ≤ 0.51) in a temperature range of 100–300 K at frequencies from 1 × 10?2 to 2 × 107 Hz

The behavior of the relative permittivity ɛ/ɛ₀ of PbZr_{1 − x} Ti _x O₃ (PZT) solid solutions (0.495 ≤ x ≤ 0.51) in the temperature range of 100–300 K at frequencies from 1 × 10⁻² to 2 × 10⁷ Hz was investigated. Diffuse, strongly relaxing maxima at T = 230−260 K (x = 0.495−0.505) and 150–160 K (x = 0.510) were observed in the PZT studied. The relaxation processes are well described by the Vogel-Fulcher law, and the dielectric spectra are approximated by the Cole-Cole formula.     

Dielectric properties of epitaxial Pb1−x Sn x Te layers at microwave frequencies

The dielectric properties of epitaxial Pb_1−x Sn _x Te layers are investigated at 9 GHz in a composition range betweenx=0 and 0.225. The samples are characterized by fairly low carrier concentrations between 1.4×10¹⁶ and 32×10¹⁶ cm⁻³. Data of the static dielectric constant (ε ^s ) are obtained at temperatures of 77 and 300 K. The results of ε ^s are 25% to 100% higher compared to previous measurements in bulk material from other authors. The observed higher values of ε ^s in the investigated samples may be due to the reduced number of point defects in epitaxially grown Pb_1−x Sn _x Te layers. The model of Kawamura which predicts a dependence of ε ^s on the effective band gap cannot be verified.     

Influence of X-irradiation on the solicon-silicon dioxide interface of MOS structures

Silicon MOS structures with an SiO₂−Si₃N₄ insulator were exposed to X-rays. Positive oxide charges arise and the continuous density of fast states increases at the Si−SiO₂ interface. In addition, a single energy state develops above the middle of the energy gap atE−E _v=600 meV. Annealing measurements in dry air and H₂ lead to the conclusion that the single energy level originates from a dissociated hydrogen bond in the silicon dioxide.     

Investigation of HfO<Subscript>2</Subscript>/SiO<Subscript>2</Subscript>/<Emphasis Type="Italic">n</Emphasis>-Si(001)-based MOS structures via ballistic electron emission microscopy

(Au, Pt)/HfO₂/SiO₂/n-Si(001) metal-oxide-semiconductor structures with a thin (≈0.5 nm) SiO₂ layer, which is formed between HfO₂ and Si during atomic layer deposition of oxide layers, have been investigated via ballistic electron emission spectroscopy. The potential barrier heights at the (Au, Pt)/HfO₂ interfaces have been determined experimentally. The peculiarities observed in the curves of dependence of the collector current on the voltage between a scanning tunneling microscope probe and a metallic electrode are related to electron transport through the vacancy defect region of HfO₂ and the quantum-mechanical interference of electron waves arising from multiple reflections at the interfaces of the two-layer dielectric and at the interfaces of dielectric with a substrate and a metallic electrode.     

Magnetocaloric effect of compounds in Gd<Subscript>5−<Emphasis Type="Italic">x</Emphasis></Subscript>Dy<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Si<Subscript>2</Subscript>Ge<Subscript>2</Subscript> system

Magnetization of magnetically ordered Gd_5−x Dy _x Si₂Ge₂ compounds with a partial substitution of Gd atoms by isovalent Dy atoms has been investigated. From temperature and field dependences of Gd_5−x Dy _x Si₂Ge₂ alloys with x = 0−2.0 changes of the magnetic part of entropy (ΔS _M ) of alloys are determined. It is established that ΔS _M achieves its maximum values at different temperatures, which linearly depend on the Dy concentration, and their values are comparable with ΔS _M ^max in Gd₅Si₂Ge₂. The obtained data allow us to conclude that the above-mentioned compounds have high magnetocaloric effect and are promising materials for using as a combined working body of magnetic refrigerators operating in the 200–270 K range of temperatures.     

Electrophysical characteristics of MIS structures based on graded band-gap MBE HgCdTe with grown in situ CdTe as a dielectric

Capacitance-voltage characteristics of MIS structures based on graded band-gap heteroepitaxial HgCdTe (x = 0.22–0.23 and 0.32–0.36) with grown in situ CdTe as a passivating coating are examined. The average surface-state densities as well as mobile- and fixed-charge densities are determined for the HgCdTe/CdTe, HgCdTe/CdTe–SiO₂–Si₃N₄, and HgCdTe/CdTe–ZnTe systems. It is shown that grown in situ CdTe forms a fairly qualitative interface, and deposition of additional SiO₂–Si₃N₄ and ZnTe layers makes it possible to control the electric strength and charges in the dielectric used.