Magnetic Impurity Band and Photoinduced Magnetic Phase Transition in Diluted Magnetic Semiconductors

Applying the dynamical coherent potential approximation (dynamical CPA) to a model of diluted magnetic semiconductors (DMSs), in which both random impurity distribution and thermal fluctuation of localized spins are taken into account, the spin-polarized band and the carrier spin polarization are calculated for various magnetizations. In order to clarify the role of impurity depth on the occurrence of ferromagnetism, three typical cases are investigated: (a) II-VI DMS, (b) deep impurity level, and (c) strong exchange interaction. The present study reveals that the impurity depth of magnetic ions strongly enhances the carrier spin polarization (CSP) and accordingly, leads to a high Curie temperature. This means that photoinduced ferromagnetism with high Curie temperature can be expected in a DMS with a deep impurity depth and strong exchange interaction.     

稀磁半导体材料居里温度的极值点

以Zener模型为基础,考虑反铁磁性交换作用对DMS材料居里温度的影响,理论计算得到了居里温度关于掺杂浓度和反铁磁性交换作用的二元函数,对GaAs ∶ TM(Ga,TM)As (TM=Sc,Ti,V,Cr,Mn,Fe,Co,Ni)的居里温度做了详细分析得到:n型半导体居里温度有一个极大值,而p型掺杂是单调的递增。     

Temperature dependence of self-reversal of magnetization of nickel

The temperature dependence of the self-reversal of magnetization of polycrystalline nickel wire at temperatures from room temperature to the Curie point is examined and interpreted. The critical field for self-reversal and the reversed magnetization decrease steadily towards the Curie point and are affected by tension and the prehistory of the specimen.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 52–55, January, 1973.     

导引中心“呼吸”孤子传输理论及数值分析

采用导引中心理论分析了色散管理孤子系统,证明了色散控制孤子（DMS）传输的稳定性,同时,给出了"呼吸"色散管理孤子的稳定传输条件.结合数值计算方法研究了DMS参量如幅度、脉宽、啁啾以及脉冲能量在色散管理周期内演化特性,该结果传输系统的稳定传输的特性,从而不但验证了导引中心"呼吸"孤子传输理论的结果,而且证明DMS在不同的平均路径色散条件下的鲁棒性.     

过渡金属Fe，Co，Ni居里点附近热电势的实验研究

测量了纯金属Fe，Co，Ni的热电势发现，在居里点附近热电势随温度的变化关系曲线均呈现先凹后凸的反常现象.由曲线的转折处可确定三个居里温度，即铁磁态居里点T_f，居里点T_C和顺磁居里点θ_p.由曲线可见，金属由铁磁态到顺磁态的相转变，存在一定温度间隔的转变过程，居里温度是这一过程的中间温度.分析曲线表明，温度在T_f与T_C范围有空穴参与导电，说明磁性负载者是d带中的空穴.对于温度在T_C与θ_p范围可能存在短程有序进行了讨论. 关键词： Fe Co Ni 热电势 居里温度     

Phase transitions in a ferromagnetic semiconductor. III

We investigate the ferromagnetic phase transition in a heavily doped semiconductor or semimetal containing magnetic ions. The coupling between conduction electrons and magnetic ions is treated in the molecular field approximation. We show that the system undergoes a transition to an ordered state for arbitrarily small concentrations of the magnetic ions and the conduction electrons. In the limitJ/? _F?1 we obtain the Ruderman-Kittel result for the Curie temperature, and forJ/? _F?1 a generalization of Thompson’s strong coupling result. (J is the exchange coupling constant between conduction electrons and magnetic ions and? _F is the kinetic Fermi energy at absolute zero.) The intermediate range is evaluated numerically.     

Localization in the ground-state of the one dimensionalX−Y model with a random transverse field

We consider the ground-state of the quantum spin model in one-dimension, where {h _i, iZ} are independent identically distributed random variables. By means of a Jordan-Wigner transformation the model is mapped into a free Fermi gas in the presence of a random external potential. We then use exponential localization of the one particle states to prove exponential decay for the spin-spin correlation functions.Partially supported by the NSF under grants DMS8702301 and INT8703059Partially supported by the CNPq under grant 303795-77FA     

Magnetic properties of epitaxial oxide heterostructures

Diluted Magnetic Semiconductors (DMS) are of great interest as injection sources for spin-polarized currents into semiconductors. Epitaxial devices have been synthesized with an intermediate spacer layer of the same semiconductor (zinc oxide, ZnO) used to produce the DMS material (ZnCoO) ensuring a homoepitaxial junction to help reduce the interface states and conduction mismatch. We observe a large magnetoresistance of about 32% in the devices at low temperatures. The present work suggests that spin polarized transport could be achieved with DMS materials acting as the source of injected spins into a non-magnetic host.     

Thermodynamics of a quasi-two-dimensional heisenberg ferromagnet with single-ion anisotropy

A quasi-two-dimensional ferromagnet (S = 1) with easy axis type anisotropy and interplanar exchange J and intraplanar exchange K is examined within the framework of the spin-wave approximation. An expression for the Curie temperature that is dependent on both the anisotropy parameter D (D/J 1) and on the exchange parameter ratio =K/J is obtained from the self-consistent equations. The important role of the single-ion anisotropy in the formation of the long-range magnetic order in two-dimensional systems is shown.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 94–101, March, 1988.The authors are grateful to S. S. Aplesnin for performing all the numerical computations and to I. S. Sandalov and A. F. Sadreev for useful discussions.     

杂质与缺陷对GaMnAs光学特性影响的研究

提高GaMnAs材料中Mn的含量可以提高其居里温度, 但随之而来也会引入很多缺陷。为了研究高含量Mn引入的缺陷对稀磁半导体材料的影响, 本文对低温分子束外延技术（LT-MBE）生长的GaMnAs外延层进行了光电导以及红外等光谱的分析。通过对样品的光谱分析, 发现样品中存在大量的As反位缺陷（AsGa）、Mn的间隙位缺陷（MnI）、以及在生长和退火过程中产生的Mn以及MnAs团簇等缺陷, 这些缺陷都会影响外延层的光谱特性, 同时也会影响器件的电学性能。     

Electronic structure and magnetic and optical properties of double perovskite Bi2 FeCrO6 from first-principles investigation

Double perovskite Bi2 FeCrO6 , related with multiferroic BiFeO3 , is very interesting because of its strong ferroelectricity and high magnetic Curie temperature beyond room temperature. We investigate its electronic structure and magnetic and optical properties by using a full-potential density-functional method. Our optimization shows that it is a robust ferrimagnetic semiconductor. This nonmetallic phase is formed due to crystal field splitting and spin exchange splitting, in contrast to previous studies. Spin exchange constants and optical properties are calculated. Our Monte Carlo magnetic Curie temperature is 450 K, much higher than any previously calculated value and consistent with experimental results. Our study and analysis reveal that the main magnetic mechanism is an antiferromagnetic superexchange between Fe and Cr over the intermediate O atom. These results are useful in understanding such perovskite materials and exploring their potential applications.     

Effect of Co substitution on magnetic properties and magnetic entropy changes in LaFe11.83Si0.94Al0.23 compounds

Effect of Co substitution on magnetic properties and magnetic entropy changes in LaFe_{11.83}Si_{0.94}Al_{0.23} compounds has been investigated by means of magnetization measurements. X-ray diffraction shows the prepared compounds to be single phase with the cubic NaZn_{13}-type structure. Substitution of Co for Fe leads to an increase of Curie temperature of the material. The magnetic entropy changes in LaFe_{11.83}Si_{0.94}Al_{0.23} and LaFe_{11.03}Co_{0.80}Si_{0.94}Al_{0.23} compounds are 21.8J/(kg·K) to 16.9J/(kg·K) under a magnetic field change of 0－5T at Curie temperature, respectively. Giant magnetic entropy changes are attributed to the higher magnetization and the rapid change in magnetization at Curie temperature.     

Giant entropy change at the co-occurrence of structural and magnetic transitions in the Ni Mn Ga Heusler alloy

We have studied the isothermal entropy change around a first-order structural transformation and in correspondence to the second-order Curie transition in the ferromagnetic Heusler alloy Ni_2.15Mn_0.85Ga. The results have been compared with those obtained for the composition Ni_2.19Mn_0.81Ga, in which the martensitic structural transformation and the magnetic transition occur simultaneously. With a magnetic field span from 0 to 1.6 T, the magnetic entropy change reaches the value of 20 J/kg K when transitions are co-occurring, while 5 J/kg K is found when the only structural transition occurs. Received 27 September 2002 / Received in final form 17 February 2003 Published online 11 April 2003 RID="a" ID="a"e-mail: solzi@fis.unipr.it     

Study of Properties of Urea and L-α-Alanine Didoped Triglycine Sulfate (UrLATGS) Crystals

In this report, the properties of triglycine sulfate (TGS) crystals doped with urea and L--alanine were studied. Urea and L--alanine have successfully entered into TGS crystal, demonstrated by infrared transmission spectrum and pyroelectric study. Figures of merit and Curie temperature are increased due to these two additions. UrLATGS is more suitable for infrared detectors than pure TGS crystals.     

Multilayer magnetic films with low Curie temperature intermediate layer

Magnetic properties of multilayer FeNi and Co films with PdCo alloy as intermediate layer are studied versus temperature in a range covering the Curie temperature of the PdCo alloy.     

Multi-spin-subband structure of dilute magnetic semiconductor quantum wells: Feedback mechanism

Using a fully self-consistent envelope function approach, we focus on wide conduction band NMS (non-magnetic semiconductor)/DMS (dilute magnetic semiconductor)/NMS quantum wells, under weak external parallel magnetic field, where many spin-subbands are usually present. We concentrate on small values of the magnetic field because we want to investigate the influence of the feedback mechanism due to the difference of the concentrations of spin-up and spin-down carriers which could induce spontaneous spin-polarization i.e. in the absence of a magnetic field. We study the spin-subband structure, the spin-subband populations and the spin-polarization as functions of the sheet carrier concentration, _Ns$N_s$, for different values of the magnitude of the exchange interaction, |J|$\left|J\right|$, between the itinerant carriers and the magnetic impurities. Our calculations for 0.01 T show that at 20 K the values of |J|$\left|J\right|$ necessary to make this feedback mechanism sufficiently strong are too high compared to the |J|$\left|J\right|$ values of common Mn-doped systems in the conduction band. However, the feedback mechanism will be sufficiently strong at low enough temperatures below 20 K for realistic values of |J|$\left|J\right|$. Moreover, we explain how increasing the sheet carrier concentration the heterostructure is transformed from an almost square quantum well to a system of two coupled heterojunctions with an intermediate soft barrier.     

A unified approach to phase diagrams in field theory and statistical mechanics

We construct the phase diagram of any system which admits a low-temperature polymer or cluster expansion. Such an expansion turns the system into a hard-core interacting contour model with small, but not necessarily positive, activities. The method uses some of Zahradnik's ideas [Z1], but applies equally well to systems with complex interactions. We give two applications. First, to low-temperatureP()₂ models with complex couplings; and second, to a computation of asymptotics of partition functions in periodic volumes. If the index of a supersymmetric field theory is known, the second application would help determine the number of phases in infinite volume.Alfred P. Solan Research Fellow. Supported in part by the National Science Foundation under Grants PHY87-064220, DMS 88-58073, and PHY/DMS 86-45122     

Response of the capacitance and dielectric loss of the SrRuO<Subscript>3</Subscript>/SrTiO<Subscript>3</Subscript>/SrRuO<Subscript>3</Subscript> film heterostructures to variations in temperature and electric field

Three-layer epitaxial heterostructures with a 750-nm-thick intermediate strontium titanate layer between two strontium ruthenate conductive thin-film electrodes have been grown by laser deposition. Photolithography and ion etching have been used to form film parallel-plate capacitors based on the grown heterostructures. The capacitance (C) and dielectric loss tangent (tanδ) of the parallel-plate capacitors have been measured in the temperature range T = 4.2–300 K at an applied bias voltage of up to ±2.5 V and without it. At T > 100 K, the temperature dependence of the dielectric permittivity (ε) of the SrTiO₃ intermediate layer is well approximated by the Curie–Weiss law taking into account the capacitance induced by the penetration of an electric field into the oxide electrodes. At T ≈ 20 K, the dielectric permittivity ε of the SrTiO₃ intermediate layer decreases by approximately 20% in an electric field of 25 kV/cm. The dielectric loss tangent of the film capacitor heterostructures decreases monotonically with a decrease in the temperature in the range from 300 to 80 K and almost does not depend on the electric field strength. However, in the range from 80 to 4.2 K, the dielectric loss tangent increases nonmonotonically (abruptly) with a decrease in the temperature and decreases significantly in an applied electric field.