ITO废靶中铟的回收

从ITO废靶中回收铟是生产中亟待解决的问题.通过试验,提出了盐酸浸出,中和除锡,铟置换,锌置换铟,压团和熔铸得到粗铟,然后电解精炼得到纯度99.99%铟的工艺.     

锡阳极泥中铟对铋含量测定的影响研究

采用传统Na_2EDTA滴定方式测定锡阳极泥(当铟含量大于0.2mg时)试液会出现颜色无明显突跃和滴定终点难以判定的现象。当铟含量大于0.2mg时,Na_2EDTA滴定法测定锡阳极泥试样中铋含量,对铋量测定有影响。主要讨论了铟在三种滴定条件下的络合行为,优化了铋的滴定条件,论证了在10.00、20.00、30.00、40.00mg铋标准溶液中加入不同含量的铟标准溶液,并在实际锡阳极泥样品YTXN-7中加入不同含量的铟,探讨了两种计算方法。实验表明,通过调节试液pH=1.5～1.7,采用Na_2EDTA标准滴定溶液滴定至试液红色刚消失,加热试液至70～80℃,继续滴定,能够出现完成铋铟的络合滴定,当铟量在1.00～2.00mg时,采用方法1计算得到铋的加标回收率在97.8%～100%,方法2的加标回收率在99.8%～101%。实验数据表明方法2计算铋的方法更理想。     

锡阳极泥中铟对铋含量测定的影响

采用传统Na2EDTA滴定方式测定锡阳极泥（当铟含量大于0.2mg时）试液会出现试液颜色无明显突跃和滴定终点难以判定的现象。本文主要探讨了Na2EDTA滴定法测定锡阳极泥试样中铋含量,当铟含量大于0.2mg时,对铋量测定有影响;讨论了铟在三种滴定条件下的络合行为;优化了铋的滴定条件;论证了在10.00mg、20.00mg、30.00mg、40.00mg铋标准溶液中加入不同含量的铟标准溶液,并在实际锡阳极泥样品YTXN-7中加入不同含量的铟,探讨了两种计算方法。实验表明,通过调节试液pH=1.5～1.7,采用Na2EDTA标准滴定溶液滴定至试液红色刚消失,加热试液至70℃～80℃,继续滴定,能够出现完成铋铟的络合滴定;当铟量在1.00mg～2.00mg时,方法2的实验数据更理想。     

PAR直接光度法测定银锡铟合金中铟的研究

有关铟的化学分析方法有极谱法,络合滴定法,原子吸收光度法及化学光度法等。但这些方法由于锡、镍等元素的干扰,一般需萃取分离铟,因而使分析手续冗长且往往影响结果的准确性。为此我们进行了PAR直接光度法测定银锡铟合金中铟的试验。在PH5.3醋酸-醋酸钠缓冲体系中用酒石酸掩蔽锡,硫脲掩蔽银,此时铟和镍同时显色,利用氮三乙酸(NTA)褪色In-PAR而保留Ni-PAR     

铟的螯合滴定法的研究及其在银合金分析中的应用

铟的螯合滴定,历来采用返滴定法。如用EDTA作滴定剂,则须预加热或热滴定,给操作带来不便,而且铝、钼等有干扰,引起正误差。本文选用HEDTA作滴定剂,提出在室温下螯合滴定铟的新方法。试验表明,抗坏血酸和硫脲等掩蔽剂存在下,在含硫酸盐的pH2溶液中滴定铟时,多数二价和三价离子无     

大量干扰离子存在下铋的螯合滴定

拟定了以巯基乙酸作掩蔽剂的条件下铋的螯合滴定法。方法要点是加入过量的EDTA,过量部分在pH5～6时,以XO-CPB作混合指示剂,用硝酸铅返滴定;然后加入巯基乙酸释放铋-EDTA螯合物,释放出的EDTA再用硝酸铅返滴定。研究了各种阳离子的干扰影响,大量金属离子包括铜、锡完全不干扰。滴定终点敏锐,操作简便,已用于锡铋合金、铅铋合金和镉铋舍金中铋的测定。     

ICP—AES法测定金属牙科材料中镓铟锡

镓铟锡合金作为一种新的金属牙科材料 ,由于镓、铟、锡在元素周期表中的位置 ,对生物体完全不显示细胞毒性 [1] ,可望代替含汞合金牙科材料 ,减少汞对人体及环境的危害 ,具有较好的应用前景。对于常量镓的测定通常采用重量法、亚铁氰化钾电位滴定法、Oxine和 EDTA络合滴定法 ;铟的测定采用重量法、EDTA滴定法 [2 ] ;锡的测定有重量法 (偏锡酸沉淀或锡的有机化合物沉淀 ) ;碘量法、EDTA滴定法、X射线荧光光谱法[3 ] 等 ,这些方法测定单一元素已显繁琐 ,如三个元素同时测定 ,流程更显冗长 ,不能满足快速测定的要求。运用 ICP- AES法测…     

Na2EDTA返滴定法测定铜镍合金中的镍含量

采用Na₂EDTA返滴定法测定铜镍合金中的镍含量,用柠檬酸钠、硫代硫酸钠和酒石酸作掩蔽剂,丁二酮肟沉淀分离,以二甲酚橙为指示剂,加入过量的Na2EDTA,用氯化锌标准溶液返滴定,能很好地分离铜及其他杂质的干扰。方法用于测定铜镍合金中的镍含量,测定结果的相对标准偏差(RSD,n=9)为0.046%~0.24%,加标回收率为99.3%~101%。能够满足日常样品的检测要求。     

锡青铜中锡锌铅的连续滴定

锡青铜中锡、锌、铅的测定,目前大都采用一份试液分别测定的方法。本文采用同一份称样,用络合滴定法直接连续测定锡、锌、铅三个元素。试样以盐酸、过氧化氢溶解,用硫脲掩蔽铜,抗坏血酸掩蔽铁,加入过量EDTA标准溶液,将锡、锌、铅全部定量络合。以六次甲基四胺调至pH5.5,以二甲酚橙、溴甲酚绿作指示剂,用硝酸铅标准溶液滴定过量EDTA。而后,加氟化铵使Sn-EDTA中释放出等摩尔的EDTA,用硝酸铅标准溶液滴定,其量为锡。然后,加亚铁氰化     

铝土矿中三氧化二铝的络合滴定

铝土矿中三氧化二铝是主要分析成份之一,用EDTA络合滴定法测定比较适宜,本文针对铝土矿含TiO_2量较高(5％左右)的情况,进行了掩蔽剂的选择及有关条件试验,实验证明苦杏仁酸掩蔽能力较弱,以苦杏仁酸作钛的掩蔽剂,对铝的测定无影响,二次滴定终点稳定,结果重现性好,但苦杏仁酸价格昂贵,乳酸     

碘酸钾滴定法测定ITO粉末材料中的锡

建立了以锌粉-氢氧化钠熔融样品,盐酸浸取,用盖氏漏斗作为还原装置,铁粉和铝粒将锡还原,碘酸钾滴定法测定ITO粉末材料中锡的分析方法。方法测定结果稳定,精密度好,相对标准偏差为0.42%~0.67%,加标回收率在99.8%~101%,能够满足ITO粉末中锡的测定要求。     

Na2EDTA滴定法测定锡阳极泥中的铋量

研究了Na_2EDTA标准滴定溶液测定锡阳极泥中铋的方法。探讨了锡阳极泥的溶样方式、滴定溶液酸度、滴定溶液温度、共存元素干扰、加标回收、方法的准确度与精密度。方法适用于锡阳极泥中5%~20%铋量的测定,尤其是铟量在0.1%及以上时,方法相对标准偏差(RSD)为0.55%~1.4%,加标回收率为99.81%~101.3%。具有操作步骤简单、适用性广、分析结果重现性好与准确度高等优点。     

复杂高铋物料中铅的Na2EDTA滴定法测定

复杂高铋物料中,铋、砷、锑、锡四元素含量高且共存时会影响铅的测定。特别是铋含量高时对铅的测定影响大。实验用EDTA—酒石酸联合掩蔽铋、砷、锑、锡,在稀硫酸介质中以硫酸钾为沉淀剂,使铅生成硫酸铅钾复盐沉淀而与铋、砷、锑、锡、铁、铜、锌、铝、钴、镍等干扰离子分离,沉淀以乙酸-乙酸钠浸取,二甲酚橙为指示剂,Na2EDTA滴定法测定铅。试验进一步优化了测定条件,确定最佳条件：硫酸（1 1）加入量为7mL、硫酸钾用量为5g、煮沸时为5min、沉淀陈化时间为2h、EDTA 50g/L 加入量为10mL、酒石酸用量为0.5g,铅的回收率99.70% ～100.65%。将实验方法应用于测定复杂高铋物料中铅,标样BY0111-1与给定值一致,相对标准偏差（n=11）RSD 0.20%～0.23%,满足生产测试要求。     

On the copper(II)-EDTA-par system for visual and photometric end-point detection in iron(III)-EDTA titrations

The copper(II)-EDTA-PAR system is proposed as indicator for direct EDTA titration of 0.2-20 mg of iron(III) in acetic acid medium. The precision and accuracy have been evaluated by spectrophotometric titration. Microtitrations determine down to 10 mug of iron. A logarithmic concentration diagram has been constructed to present the complex equilibria involved. In an interference study the masking agent ammonium fluoride was found to improve the end-point detection. The method has been applied successfully to practical standard samples and compares favourably with other EDTA titrations of iron.     

Analysis of tellurides of lead and tin by automatic titrations

An analytical method based on automatic potentiometric EDTA and redox titrations was developed for the analysis of tellurides of lead and tin.First, the sum of lead and tin is titrated at pH 4.5 by adding a known excess of EDTA and back-titrating with a standard lead solution. After addition of ammonium fluoride to mask the tin, the EDTA released from the Sn-EDTA complex is titrated with standard lead solution. Alternatively, after the determination of total lead and tin, lead may be determined by back-titration with standard lead on a separate sample aliquot using tartaric acid to mask the tin. Tellurium is separated as tellurous acid, which is then dissolved in a dilute sulfuric acid solution and oxidized by permanganate at room temperature; the excess permanganate is back-titrated with iron(II) solution automatically. This titration may also be used to determine tellurium in the presence of lead and tin after treatment with perchloric acid. Accuracies of 0.1-0.2% can be obtained.     

Calculation of the electronic and optical properties of indium tin oxide by density functional theory

Density functional theory (DFT) was used to calculate the bulk electronic and optical properties of indium tin oxide (ITO). The ITO model was constructed replacing indium atoms with tin atoms in the cubic unit cell of indium oxide. To allow more possibilities for tin atom substitution than afforded by the forty-atom primitive cell of indium oxide all eighty atoms of the unit cell were included in the stoichiometry (In_32−xSn_xO₄₈) using periodic boundary conditions. A number of properties of ITO were calculated including the optical band gap, charge carrier density and plasma frequency. The dependence of the electronic and optical properties of ITO on a variety of parameters such as the tin content, cubic lattice parameter and the distance between adjacent tin atoms was investigated. The electronic and optical properties agreed well with experimental data and allowed insight into the origin of the electronic and optical properties of ITO.     

A Facile Solution-Phase Approach to Transparent and Conducting ITO Nanocrystal Assemblies

Monodisperse 11 nm indium tin oxide (ITO) nanocrystals (NCs) were synthesized by thermal decomposition of indium acetylacetonate, In(acac)(3), and tin bis(acetylacetonate)dichloride, Sn(acac)(2)Cl(2), at 270 °C in 1-octadecene with oleylamine and oleic acid as surfactants. Dispersed in hexane, these ITO NCs were spin-cast on centimeter-wide glass substrates, forming uniform ITO NC assemblies with root-mean-square roughness of 2.9 nm. The assembly thickness was controlled by ITO NC concentrations in hexane and rotation speeds of the spin coater. Via controlled thermal annealing at 300 °C for 6 h under Ar and 5% H(2), the ITO NC assemblies became conductive and transparent with the 146 nm-thick assembly showing 5.2 × 10(-3) Ω·cm (R(s) = 356 Ω/sq) resistivity and 93% transparency in the visible spectral range-the best values ever reported for ITO NC assemblies prepared from solution phase processes. The stable hexane dispersion of ITO NCs was also readily spin-cast on polyimide (T(g) ～360 °C), and the resultant ITO assembly exhibited a comparable conductivity and transparency to the assembly on a glass substrate. The reported synthesis and assembly provide a promising solution to the fabrication of transparent and conducting ITO NCs on flexible substrates for optoelectronic applications.     

Potential Response of Monolayer‐Modified Indium Tin Oxide Electrodes to Indole Compounds

Potential response of indium tin oxide (ITO) electrode modified by treatment with disuccinimidyl suberate (DSS) was investigated to various target molecules. Distinctively, the DSS‐modified ITO electrode exhibited a potential shift to the molecules possessing an indole group such as tryptophan, tryptamine and indole propionic acid, while little response to benzoic acid, phenylalanine, proline, proline amide, and arginine was observed. In addition, the combination of this specificity to indoles and enantioselective affinity of human serum albumin (HSA), which was additionally immobilized on the DSS‐modified ITO electrode, brought about enantioselective potential response to tryptophan.     

A novel precursor system and its application to produce tin doped indium oxide

A new type of precursor has been developed by molecular design and synthesised to produce tin doped indium oxide (ITO). The precursor consists of a newly developed bimetallic indium tin alkoxide, Me(2)In(O(t)Bu)(3)Sn (Me = CH(3), O(t)Bu = OC(CH(3))(3)), which is in equilibrium with an excess of Me(2)In(O(t)Bu). This quasi single-source precursor is applied in a sol-gel process to produce powders and coatings of ITO using a one-step heat treatment process under an inert atmosphere. The main advantage of this system is the simple heat treatment that leads to the disproportionation of the bivalent Sn(II) precursor into Sn(IV) and metallic tin, resulting in an overall reduced state of the metal in the final tin doped indium oxide (ITO) material, hence avoiding the usually necessary reduction step. Solid state (119)Sn-NMR measurements of powder samples confirm the appearance of Sn(II) in an amorphous gel state and of metallic tin after annealing under nitrogen. The corresponding preparation of ITO coatings by spin coating on glass leads to transparent conductive layers with a high transmittance of visible light and a low electrical resistivity without the necessity of a reduction step.     

Na2EDTA滴定法测定粗二氧化碲中铅含量

建立了用氢溴酸消除锑、砷、锡干扰,用硫酸将铅形成硫酸铅沉淀,再用EDTA络合滴定法测定粗二氧化碲中铅量的方法。试样用硝酸、盐酸溶解,用硫酸沉淀铅,氢溴酸消除锑、砷、锡的干扰后,过滤分离其他共存元素,以乙酸-乙酸钠缓冲溶液溶解硫酸铅沉淀,在pH=5.0～6.0时,以二甲酚橙作指示剂,用Na_2EDTA溶液滴定溶液中铅含量。实验结果表明,氢溴酸加入量为15mL,酒石酸加入量为10mL,沉淀体积为50～60mL,沉淀时间1h以上时,方法相对标准偏差(RSD)在0.10%～1.1%,加标回收率为97.1%～102%,满足粗二氧化碲中铅量的生产控制检测要求。