Effects of in situ thermal annealing on the structural, optical, and electrical properties in Hg0.7Cd0.3Te epilayers grown on CdTe buffer layers

Scanning electron microscopy (SEM), Fourier transform infrared (FTIR) transmission, and Hall effect measurements were performed to investigate the structural, optical, and electrical properties of as-grown and in situ-annealed Hg_0.7Cd_0.3Te epilayers grown on CdTe buffer layers by using molecular beam epitaxy. After the Hg_0.7Cd_0.3Te epilayers had been annealed in a Hg-cell flux atmosphere, the SEM images showed that the surface morphologies of the Hg_0.7Cd_0.3Te thin films were mirror-like with no indication of pinholes or defects, and the FTIR spectra showed that the transmission intensities had increased in comparison to that of the as-grown Hg_0.7Cd_0.3Te epilayer. Hall-effect measurements showed that n-Hg_0.7Cd_0.3Te epilayers were converted to p-Hg_0.7Cd_0.3Te epilayers. These results indicate that the surface, optical, and electrical properties of the Hg_1 − xCd_xTe epilayers are improved by annealing and that as-grown n-Hg_1 − xCd_xTe epilayers can be converted to p-Hg_1 − xCd_xTe epilayers by in situ annealing.     

A comparative study on Zn0.8Cd0.2O films deposited on different substrates

Highly (0 0 2)-oriented Zn_0.8Cd_0.2O crystal films were prepared on different substrates, namely, glass, Si(1 1 1) and α-Al₂O₃(0 0 1) wafers by the dc reactive magnetron sputtering technique. The Zn_0.8Cd_0.2O/α-Al₂O₃ film has the best crystal quality with a FWHM of (0 0 2) peak of 0.3700°, an average grain size of about 200 nm and a root-mean-square surface roughness of about 70 nm; yet the Zn_0.8Cd_0.2O/glass holds the worst crystal quality with a much larger FWHM of 0.6281°. SIMS depth profile shows that the Zn and O compositions change little along the film depth direction; the Cd incorporation also almost holds the line towards the top surface other than an accumulation at the interface between the film and the substrate. The Cd content in the film is nearly consistent with that in target.     

Sputter cleaning and dry oxidation of CdTe,HgTe, and Hg0.8Cd0.2Te surfaces

The analyses of CdTe, HgTe, and Hg_0.8Cd_0.2Te surfaces by XPS and LEED after Ar⁺ sputtering and after the subsequent onset of a dry oxidation are described, and a quantitative evaluation of the XPS spectra is attempted. The results are: Ar⁺ sputtering yields a perfect unreconstructed CdTe surface of stoichiometric composition, whereas the composition of sputtered HgTe and Hg_0.8Cd_0.2Te surfaces generally deviates from the stoichiometry of the respective compound. This deviation is a function of the energy of the Ar ions (1 to 15 keV) and is characterized by an increasing deficit in Hg as the ion energy is raised. The Hg deficit of sputtered Hg_0.8Cd_0.2Te surfaces is substitutionally compensated by an equivalent increase in Cd, and due to this substitution the resulting surfaces are sufficiently ordered to display a distinct LEED pattern. The oxidation of sputtered CdTe, HgTe, and Hg_0.8Cd_0.2Te surfaces in an O₂ atmosphere is an extremely slow process. Therefore, the surfaces to be oxidized were additionally exposed to UV radiation (low pressure mercury lamp), and due to UV generated ozone as an oxidizing agent ultrathin native oxide layers of up to 15 Å thickness were readily obtained. The predominant constituents of these native oxide layers on Hg_0.8Cd_0.2Te are concluded to be CdTeO₃ and TeO₂.     

Melting and solidification in laser-irradiated HgCdTe

The results of the numerical analysis of the effects induced by pulsed Nd:YAG and ruby laser on Hg_0.8Cd_0.2Te are presented. The proposed model facilitates the planning of HgCdTe laser processing and the choice of the processing parameters such as: melt depth, melt duration of the surface layer and melt front velocity, as well as the irradiation parameters. The influence of the optical parameters and the temperature dependence of the HgCdTe thermal parameters on the results of laser irradiation are specially analyzed.     

The p-n junction formation in Hg1−xCdxTe by laser annealing method

The formation of p-n junctions in Hg_1−xCd_xTe is still an open research task. In this paper, laser treatment of n-type Hg_1−xCd_xTe samples resulting in the formation of a p-n junction is studied. The YAG:Nd³⁺ laser with pulse duration of 250 μs or 40 ns was used. The energy density of laser beam was below the threshold of sample surface melting. The interpretation of the results is based on a model of defects formation related to interstitial mercury diffusion following laser irradiation. The Hall measurements clearly point out to a simple p-n junction. The resistance of samples shows the long time relaxation described by the 1/2 power law, which is attributable to the defect diffusion processes, but not to the changes in the electron-hole systems.     

High pressure equation of state studies using methanol-ethanol-water and argon as pressure media

We have measured the equation of state of the intermetallic compound AuIn₂ up to 20 GPa and Cd_0.8Hg_0.2 up to 50 GPa using methanol-ethanol-water solution or argon as pressure media. In the experiments performed with argon as pressure medium, we minimized non-hydrostatic conditions by thermally annealing the sample. We present data revealing compressibility anomalies in AuIn₂ at 2.7 GPa and in Cd_0.8Hg_0.2 near 8, 18 and 34 GPa with methanol-ethanol-water and argon. At pressures above 5 GPa the P-V data for AuIn₂ and Cd_0.8Hg_0.2 from experiments preformed with argon as a pressure medium start deviating from those using methanol-ethanol-water, and the equation of state based on experiments in argon is stiffer compared with that in methanol-ethanol-water. This behavior is consistent with the relative merits of the two pressure transmitting media as documented in the literature. We also provide a brief summary of the results of electronic structure calculations that associate these anomalies with electronic topological transitions.     

Raman scattering from (110) Hg0.8Cd0.2Te.

We report the first polarization dependent Raman scattering from the (1$\text{1}$0) surface of Hg_0.8Cd_0.2Te. In addition to the “HgTe-like” and “CdTe-like” transverse and longitudinal $\text{(}\text{q}\text{=0)}$ optical modes, we have observed a “clustering mode” [Γ₁ symmetry], a feature due to a coupled LO phonon-intersubband excitation in the surface inversion layer and a symmetry forbidden TO feature which may be related to internal strain. The previously reported “defect mode” was not observed.     

Laser induced damage studies in mercury cadmium telluride

We have investigated laser induced damage at laser wavelength in diamond paste polished (mirror finish) and carborundum polished Hg_0.8Cd_0.2Te (MCT) samples with increasing fluence as well as number of pulses. Evolution of damage morphology in two types of samples is quite different. In case of diamond paste polished samples, evolution of damage morphological features is consistent with Hg evaporation with transport of Cd/Te globules towards the periphery of the molten region. Cd/Te globules get accumulated with successive laser pulses at the periphery indicating an accumulation effect. Real time reflectivity (RTR) measurement has been done to understand melt pool dynamics. RTR measurements along with the thermal profile of the melt pool are in good agreement with thermal melting model of laser irradiated MCT samples. In case of carborundum polished samples, laser damage threshold is significantly reduced. Damage morphological features are significantly influenced by surface microstructural condition. From comparison of the morphological features in the two cases, it can be inferred that laser processing of MCT for device applications depends significantly on surface preparation conditions.     

Modification of Cd1−xMnxTe crystal surface layers by nanopulsed laser irradiation

The surface modification of Cd_1−xMn_xTe (x = 0-0.3) crystal wafers under pulsed laser irradiation has been studied. The samples were irradiated by a Q-switched ruby laser with pulse duration of 80 ns. Optical diagnostics of laser-induced thermal processes were carried out by means of time-resolved reflectivity measurements at wavelengths 0.53 and 1.06 μm. Laser irradiation energy density, E varied in the range of 0.1-0.6 J/cm². Morphology of irradiated surface was studied using scanning electron microscopy. The energy density whereby the sample surface starts to melt, depends on Mn content and is equal to 0.12-0.14 J/cm² for x ≤ 0.2, in the case of x = 0.3 this value is about 0.35 J/cm². The higher Mn content leads to higher melt duration. The morphology of laser irradiated surface changes from a weakly modified surface to a single crystal strained one, with an increase in E. Under irradiation with E in the range of 0.21-0.25 J/cm², the oriented filamentary crystallization is observed. The Te inclusions on the surface are revealed after the irradiation of samples with small content of Mn.     

Heat capacity and magnetic properties of pyrochlore Hg2Os2O7

Hg₂Os₂O₇, which has the cubic pyrochlore structure, remains metallic down to the liquid helium temperature unlike its isostructural counterpart Cd₂Os₂O₇, which shows metal-insulator transition at 226 K. Magnetization and heat capacity data for Hg₂Os₂O₇ are presented. The magnetic anomaly at T_N=88 K shares many characteristics in common with the metal-insulator transition in Cd₂Os₂O₇, though Hg₂Os₂O₇ remains metallic below T_N. The heat capacity C_p shows no or very little change in the magnetic entropy around T_N, supporting the view that there is no long-range ordering of localized spins. The measured value of electronic heat-capacity coefficient γ=21 mJ K⁻²mol⁻¹ is comparable to the value obtained from band-structure calculation on Cd₂Os₂O₇, suggesting that mass-enhancement is small in Hg₂Os₂O₇. There is a pronounced peak in C_p/T³ at 13.1 K, which corresponds to a peak in the phonon density of states at 40 cm⁻¹.     

Stress relaxation in CdHgTe/CdTe heterostructures

Based on our analysis of the results of measurements of elastic deformation in Cd_xHg_1–xTe/CdTe heterostructures it is shown that the degree of relaxation of the crystal lattice for Cd_0.2Hg_0.8Te films 1 µm thick with a working temperature of 273 K is 0.8766, which supports the idea of almost full relaxation of the mismatch stress for such thicknesses of A₂B₆ films.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 112–114, August, 1995.     

Photo conductivity of condensed electrons in the dilute metal N-type Hg0.8Cd0.2Te

We have measured time resolved photo conductivity in n-type Hg_0.8Cd_0.2Te above the magnetic quantum limit. In this dilute metal the low temperature magneto-transport is governed by a thermally activated mobility of the electrons, behaving like a viscous liquid of molecules or atoms. Photo conductivity proved to represent a valuable method to obtain information on electron correlation time, on the carrier density and on the recombination time of dondensed electrons.     

Ambient temperature or moderately cooled semiconductor hot electron bolometer for mm and sub-mm regions

A model of semiconductor hot electron bolometer (SHEB), in which electromagnetic radiation heats only electrons in narrow-gap semiconductor without its lattice slow-response heating, is considered. Free carrier heating changes the generation-recombination processes that are the reason of semiconductor resistance rise. It is estimated, that Hg_0.8Cd_0.2Te detector noise equivalent power (NEP) for mm and sub-mm radiation wavelength range can reach NEP ∼10⁻¹¹ W at Δf = 1 Hz signal gain frequency bandwidth. Measurements performed at electromagnetic wave frequencies v = 36, 39, 55, 75 GHz, and at 0.89 and 1.58 THz too, with non-optimized Hg_0.8Cd_0.2Te antenna-coupled bolometer prototype confirmed the basic concept of SHEB. The experimental sensitivity S_v ∼2 V/W at T = 300 K and the calculated both Johnson-Nyquist and generation-recombination noise values gave estimation of SHEB NEP ∼3.5 × 10⁻¹⁰ W at the band-width Δf = 1 Hz and v = 36 GHz.     

Damage and lattice location studies in Hg implanted Hg1–xCdxTe

Abstract

Rutherford backscattering (RBS) and ion induced X-ray (PIXE) channeling experiments have been used to study the damage accompanying Hg and Al implantations into Hg_0.8Cd_0.2 Te and its annealing as well as to determine the location of Hg in the crystal.

The damage induced by the implantation of 300 keV Hg and 250 keV Al ions at room temperature was found from RBS channeling studies to reach a saturation level at doses of 1 × 10¹⁴ cm^?2 and 3 × 10¹⁴ cm^?2 respectively. The damage resembles that characteristic for extended defects and it anneals at ≈ 300°C.

The location of the constituents of Hg implanted Hg_0.8 Cd_0.2 Te was studied by PIXE channeling observing the characteristic X-rays for each element. Angular scans indicate that the channels are mostly blocked by Hg atoms for both unannealed and, to a lesser extent, annealed crystals. This observation supports the suggestion that interstitial Hg atoms may be responsible for the conductivity of Hg implanted Hg_1–x Cd_g Te.     

Electron IMFPs in bulk Cd0.88Mn0.12Te crystals determined by EPES

The inelastic mean free path (IMFP) of electrons is a basic parameter for surface-sensitive electron spectroscopies (AES, XPS, EELS) in quantitative analyses.Cd_1−xMn_xTe mixed crystals are currently of great interest due to their magnetic and magneto-optical properties. Since information on electron transport processes in these semimagnetic compounds is scarce, their systematic studies are highly desirable.In the present work, the IMFPs in Cd_0.88Mn_0.12Te (1 1 0) crystal samples were obtained from EPES with use of the Ni standard in the electron energy range 500-2000 eV. In addition, we also explored the effect of bulk Mn content in the determination of the IMFP. Relative EPES measurements were carried out using the MICROLAB 350 spectrometer. The sample surface was sputter cleaned and amorphized by Ar⁺ ions. Surface composition of the samples was monitored in situ by XPS and AES. The measured IMFPs were uncorrected for surface excitations and compared with those predicted from the TPP-2M and G-1 formulae. Also, the values of the IMFPs determined here were compared with those evaluated from the expression of Sekine et al. However, accuracy of this expression is rather poor except the case of pure CdTe (x = 0). In general, good agreement was found between the measured IMFPs in Cd_0.88Mn_0.12Te and the corresponding predicted IMFPs. The root-mean-square deviation from IMFP values predicted from the TPP-2M formula was 1.2 Å. The mean percentage deviation from the TPP-2M IMFPs was 9.3%.     

碲溶剂法生长碲镉汞晶体的数值模拟

提出了碲溶剂法在稳态条件下生长碲镉汞晶体的理论模型.该模型利用与时间相关的一维物质扩散方程组，熔区自由边界通过相图来确定.采用有限差分法完成了组分x=0.2的长波碲镉汞晶体生长过程的数值模拟.讨论了液相区温度场分布、加热器移动速度、液相区长度和生长界面温度对生长碲镉汞晶体轴向组分的影响.模拟结果与实验结果相符. 关键词：     

Ab initio band structure calculations of the low-temperature phases of Ag2Se, Ag2Te and Ag3AuSe2

Ab initio band structure calculations were performed for the low-temperature modifications of the silver chalcogenides β-Ag₂Se, β-Ag₂Te and the ternary compound β-Ag₃AuSe₂ by the local spherical wave (LSW) method. Coordinates of the atoms of β-Ag₂Se and β-Ag₃AuSe₂ were obtained from refinements using X-ray powder data. The structures are characterized by three, four and five coordinations of silver by the chalcogen, a linear coordination of gold by Se, and by metal-metal distances only slightly larger than in the metals. The band structure calculations show that β-Ag₃AuSe₂ is a semiconductor, while β-Ag₂Se and β-Ag₂Te are semimetals with an overlap of about 0.1-0.2 eV. The Ag 4d and Au 5d states are strongly hybridized with the chalcogen p states all over the valence bands. β-Ag₂Se and β-Ag₂Te have a very low DOS in the energy range from about −0.1 to +0.5 eV. The calculated effective mass β-Ag₂Se is about 0.1-0.3 m_e for electrons and 0.75 m_e for holes, respectively.     

Femtosecond laser patterning of Ta0.1W0.9Ox/ITO thin film stack

Selective laser patterning of thin films in a multilayered structure is an emerging technology for process development and fabrication of optoelectronics and microelectronics devices. In this work, femtosecond laser patterning of electrochromic Ta_0.1W_0.9O_x film coated on ITO glass has been studied to understand the selective removal mechanism and to determine the optimal parameters for patterning process. A 775 nm Ti:sapphire laser with a pulse duration of 150 fs operating at 1 kHz was used to irradiate the thin film stacks with variations in process parameters such as laser fluence, feedrate and numerical aperture of objective lens. The surface morphologies of the laser irradiated regions have been examined using a scanning electron microscopy and an optical surface profiler. Morphological analysis indicates that the mechanism responsible for the removal of Ta_0.1W_0.9O_x thin films from the ITO glass is a combination of blistering and explosive fracture induced by abrupt thermal expansion. Although the pattern quality is divided into partial removal, complete removal, and ITO film damage, the ITO film surface is slightly melted even at the complete removal condition. Optimal process window, which results in complete removal of Ta_0.1W_0.9O_x thin film without ablation damage in the ITO layer, have been established. From this study, it is found that focusing lens with longer focal length is preferable for damage-free pattern generation and shorter machining time.     

Thermal, electrical, and electrochemical properties of Lanthanum-doped Ba0.5Sr0.5 Co0.8Fe0.2O3-δ

Crystal structure, thermogravimetry (TG), thermal expansion coefficient (TEC), electrical conductivity and AC impedance of (Ba_0.5Sr_0.5)_1-xLa_xCo_0.8Fe_0.2O_3-δ (BSLCF; 0.05?x?0.20) were studied in relation to their potential use as intermediate temperature solid oxide fuel cell (IT-SOFC) cathode. A single cubic pervoskite was observed by X-ray diffraction (XRD). The TEC of BSLCF was increasing slightly with the increasing content of La, and all the compounds showed abnormal expansion at high temperature. Proved by the TG result, it was associated with the loss of lattice oxygen. The electrical conductivity, which is the main defect of Ba_0.5Sr_0.5 Co_0.8Fe_0.2O_3-δ (BSCF), was improved by La doping, e.g., the compound of x=0.20 demonstrated a conductivity of σ=376 S cm⁻¹ at 392 °C. The increase of electrical conductivity resulted from the increased concentration of charge carrier induced by La doping. In addition, the AC impedance revealed the better electrochemical performance of BSLCF. For example, at 500 °C, the sample with composition x=0.15 yielded the resistance values of 2.12 Ω cm², which was only 46% of BSCF.     

Writing of two-dimensional crystal curved lines at the surface of Sm2O3-Bi2O3-B2O3 glass by samarium atom heat processing

Two-dimensional crystal curved lines consisting of the nonlinear optical Sm_xBi_1−xBO₃ phase are fabricated at the surface of 8Sm₂O₃·37Bi₂O₃·55B₂O₃ glass by continuous wave Nd:YAG laser (wavelength: 1064 nm) irradiation (samarium atom heat processing) with a power of ∼0.9 W and a laser scanning speed of 5 μm/s. The curved lines with bending angles of 0-90° or with sine-shapes are written by just changing the laser scanning direction. The polarized micro-Raman scattering spectra for the line after bending are the same as those for the line before bending, indicating that the crystal plane of Sm_xBi_1−xBO₃ crystals to the crystal growth direction might be maintained even after the change in the laser scanning direction. It is found from laser scanning microscope observations that the crystal lines at the surface are swelled out smoothly, giving a height of about 10 μm.