M/Li+(M = Mg2+, Zn2+, and Mn2+) ion-exchange on lithium ion-conducting perovskite-type oxides and their properties

Lithium ions of perovskite-type lithium ion conductor La_0.55Li_0.35TiO₃ were replaced by divalent Mg²⁺, Zn²⁺, and Mn²⁺ ions in an ion-exchange reaction using molten chlorides. The polycrystalline Mg-exchanged and Zn-exchanged samples are solid electrolytes for divalent Mg²⁺ and Zn²⁺ ions, whose dc ionic conductivities (σ = 2.0 × 10^− 6 S cm^− 1 at 558 K for the Mg-exchanged sample, La_0.56(2)Li_0.02(1)Mg_0.16(1)TiO_3.01(2) and σ = 1.7 × 10^− 6 S cm^− 1 at 708 K for the Zn-exchanged samples, La_0.55(1)Li_0.0037(2)Zn_0.15(1)TiO_2.98(2)) were compared to those of the known highest Mg²⁺ and Zn²⁺ inorganic solid electrolytes. The Mn-exchanged sample, then, showed paramagnetic behavior in the temperature range of 2 to 300 K. The Mn ions in the exchanged sample are divalent and the spin configuration is in high spin state (S = 5/2).     

Device linearity improvement and current enhancement utilizing high-to-low doping-channel FETs

We report device linearity improvement and current enhancement in both a heterostructure FET (HFET) and a camel-gate FET (CAMFET) using InGaAs/GaAs high-low and GaAs high-medium-low doped channels, respectively. In an HFET, a low doped GaAs layer was employed to build an excellent Schottky contact. In a GaAs CAMFET, a low doped layer together withn⁺andp⁺layers formed a high-performance majority camel-diode gate. Both exhibit high effective potential barriers of >1.0 V and gate-to-drain breakdown voltages of >20.0 V (atI_g=1.0 mA mm⁻¹). A thin, high doped channel was used to enhance current drivability and to improve the transconductance linearity. A 2×100 μm²HFET had a peak transconductance of 230 mS mm⁻¹and a current density greater than 800 mA mm⁻¹. The device had a transconductance of more than 80 percent of the peak value over a wide drain current range of 200 to 800 mA mm⁻¹. A 1.5×100 μm²CAMFET had a peak transconductance of 220 mS mm⁻¹and a current density greater than 800 mA mm⁻¹. Similarly, the device had a transconductance of more than 80 percent of the peak value over a wide drain current range of 160 to 800 mA mm⁻¹. The improvement of device linearity and the enhancement of current density suggest that high-to-low doped-channel devices for both an HFET and a CAMFET are suitable for high-power large signal circuit applications.     

Effect of GZO thickness and annealing temperature on the structural,electrical and optical properties of GZO/Ag/GZO sandwich films

The GZO/Ag/GZO sandwich films were deposited on glass substrates by RF magnetron sputtering of Ga-doped ZnO (GZO) and ion-beam sputtering of Ag at room temperature. The effect of GZO thickness and annealing temperature on the structural, electrical and optical properties of these sandwich films was investigated. The microstructures of the films were studied by X-ray diffraction (XRD). X-ray diffraction measurements indicate that the GZO layers in the sandwich films are polycrystalline with the ZnO hexagonal structure and have a preferred orientation with the c-axis perpendicular to the substrates. For the sandwich film with upper and under GZO thickness of 40 and 30 nm, respectively, it owns the maximum figure of merit of 5.3 × 10⁻² Ω⁻¹ with a resistivity of 5.6 × 10⁻⁵ Ω cm and an average transmittance of 90.7%. The electrical property of the sandwich films is improved by post annealing in vacuum. Comparing with the as-deposited sandwich film, the film annealed in vacuum has a remarkable 42.8% decrease in resistivity. The sandwich film annealed at the temperature of 350 °C in vacuum shows a sheet resistance of 5 Ω/sq and a transmittance of 92.7%, and the figure of merit achieved is 9.3 × 10⁻² Ω⁻¹.     

Oxygen diffusion and surface exchange studies on (La0.75Sr0.25)0.95Cr0.5Mn0.5O3−δ

Oxygen tracer diffusion coefficient (D^⁎) and surface exchange coefficient (k^⁎) have been measured for (La_0.75Sr_0.25)_0.95Cr_0.5Mn_0.5O_3−δ using isotopic exchange and depth profiling by secondary ion mass spectrometry technique as a function of temperature (700–1000 °C) in dry oxygen and in a water vapour-forming gas mixture. The typical values of D^⁎ under oxidising and reducing conditions at ∼ 1000 °C are 4 × 10^− 10 cm² s^− 1 and 3 × 10^− 8 cm² s^− 1 respectively, whereas the values of k^⁎ under oxidising and reducing conditions at ∼ 1000 °C are 5 × 10^− 8 cm s^− 1 and 4 × 10^− 8 cm s^− 1 respectively. The apparent activation energies for D^⁎ in oxidising and reducing conditions are 0.8 eV and 1.9 eV respectively.     

Transport and phase dynamics of poly(vinyl pyrrolidone) doped plastically crystalline N-methyl-N-propylpyrrolidinium tetrafluoroborate

The plastic crystal phase forming N-methyl-N-propylpyrrolidinium tetrafluoroborate organic salt (P₁₃BF₄) was combined with 2, 5 and 10 wt.% poly(vinyl pyrrolidone) (PVP). The ternary 2 wt.% PVP/2 wt.% LiBF₄/P₁₃BF₄ was also investigated. Thermal analysis, conductivity, optical thermomicroscopy, and Nuclear Magnetic Resonance (¹¹B, ¹⁹F, ¹H, ⁷Li) were used to probe the fundamental transport processes. Both the onset of phase I and the final melting temperature were reduced with increasing additions of PVP. Conductivity in phase I was 2.6 × 10^− 4 S cm^− 1 5.2 × 10^− 4 S cm^− 1 1.1 × 10^− 4 S cm^− 1 and 3.9 × 10^− 5 S cm^− 1 for 0, 2, 5 and 10 wt.%PVP/P₁₃BF₄, respectively. Doping with 2 wt.% LiBF₄ increased the conductivity by up to an order of magnitude in phase II. Further additions of 2 wt.% PVP slightly reduced the conductivity, although it remained higher than for pure P₁₃BF₄.     

Quick response PZT/P(VDF-TrFE) composite film pyroelectric infrared sensor with patterned polyimide thermal isolation layer

The fabrication method and the pyroelectric response of a single element infrared sensor based lead zirconate titanate (PZT) particles and polyvinylidene fluoride P(VDF-TrFE) copolymer composite thick film is reported in this paper. A special thermal insulation structure, including polyimide (PI) thermal insulation layer and thermal insulation tanks, was used in this device. The thermal insulation tanks were fabricated by laser micro-etching technique. Voltage responsivity (R_V), noise voltage (V_noise), noise equivalent power (NEP), and detectivity (D^*) of the PZT/P(VDF-TrFE) based infrared sensor are 1.2 × 10³ V/W, 1.25 × 10⁻⁶ V Hz^1/2, 1.1 × 10⁻⁹ W and 1.9 × 10⁸ cm Hz^1/2 W⁻¹ at 137.3 Hz modulation frequency, respectively. The thermal time constant of the infrared sensor τ_T was about 15 ms. The results demonstrate that the composite infrared sensor show a high detectivity at high chopper frequency, which is an essential advantage in infrared detectors and some other devices.     

Epitaxial growth of well-ordered ultra-thin Al2O3 film on NiAl (1 1 0) by a single-step oxidation

Well-ordered ultra-thin Al₂O₃ films were grown on NiAl (1 1 0) surface by exposing the sample at various oxygen absorption temperatures ranging from 570 to 1100 K at dose rates 6.6 × 10⁻⁵ and 6.6 × 10⁻⁶ Pa. From the results of low-energy electron diffraction (LEED), Auger electron spectrometer (AES) and X-ray photon spectroscopy (XPS) observations, it was revealed that oxidation mechanism above 770 K is different from well-known two-step process. At high temperature, oxidation and crystallization occurred simultaneously while in two-step process oxidation and crystallization occurred one after another. At high-temperature oxidation well-ordered crystalline oxide can be formed by a single-step without annealing. Well-ordered Al₂O₃ layer with thickness over 1 nm was obtained in oxygen absorption temperature 1070 K and a dose rate 6.6 × 10⁻⁶ Pa at 1200 L oxygen.     

Investigating gate metal induced reduction of surface donor density in GaN/AlGaN/GaN heterostructure by electroreflectance spectroscopy

The internal field of GaN/AlGaN/GaN heterostructure on Si-substrate was investigated by varying the thickness of an undoped-GaN capping layer using electroreflectance spectroscopy. The four samples investigated are AlGaN/GaN heterostructure without a GaN cap layer (reference sample) and three other samples with GaN/AlGaN/GaN heterostructures in which the different thickness of GaN cap layer (2.7 nm, 7.5 nm, and 12.4 nm) has been considered. The sheet carrier density (n_s) of a two-dimensional electron gas has decreased significantly from 4.66 × 10¹² cm⁻² to 2.15 × 10¹² cm⁻² upon deposition of a GaN capping layer (12.4 nm) over the reference structure. Through the analysis of internal fields in each GaN capping and AlGaN barrier layers, it has been concluded that the undiminished surface donor states (n_s) of a reference structure and the reduced n_s caused by the Au gate metal are approximately 5.66 × 10¹² cm⁻² and 1.08 × 10¹² cm⁻², respectively.     

Ultrasonic assisted-Fenton-like degradation of nitrobenzene at neutral pH using nanosized oxides of Fe and Cu

Ultrasonic-assisted heterogeneous Fenton reaction was used for degradation of nitrobenzene (NB) at neutral pH conditions. Nano-sized oxides of α-Fe₂O₃ and CuO were prepared, characterized and tested in degradation of NB (10 mg L⁻¹) under sonication of 20 kHz at 25 °C. Complete degradation of NB was effected at pH 7 in presence of 10 mM H₂O₂ after 10 min of sonication in presence of α-Fe₂O₃ (1.0 g L⁻¹), (k = 0.58 min⁻¹) and after 25 min in case of CuO (k = 0.126 min⁻¹). α-Fe₂O₃ showed also effective degradation under the conditions of 0.1 g L⁻¹ oxide and 5.0 mM of H₂O₂, even though with a lower rate constant (0.346 min⁻¹). Sonication plays a major role in enhancing the production of hydroxyl radicals in presence of solid oxides. Hydroxyl radicals-degradation pathway is suggested and adopted to explain the differences noted in rate constants recorded on using different oxides.     

Synthesis of ammonia at atmospheric pressure with Ce0.8M0.2O2−δ (M = La,Y, Gd,Sm) and their proton conduction at intermediate temperature

Ionic conduction in fluorite-type structure oxide ceramics Ce_0.8M_0.2O_2−δ (M = La, Y, Gd, Sm) at temperature 400–800 °C was systematically studied under wet hydrogen/dry nitrogen atmosphere. On the sintered complex oxides as solid electrolyte, ammonia was synthesized from nitrogen and hydrogen at atmospheric pressure in the solid states proton conducting cell reactor by electrochemical methods, which directly evidenced the protonic conduction in those oxides at intermediate temperature. The rate of evolution of ammonia in Ce_0.8M_0.2O_2−δ (M = La, Y, Gd, Sm) is up to 7.2 × 10^− 9, 7.5 × 10^− 9, 7.7 × 10^− 9, 8.2 × 10^− 9 mol s^− 1 cm^− 2, respectively.     

Effects of compositions on properties of PEO–KI–I2 salts polymer electrolytes for DSSC

The effects of compositions on properties of PEO/KI/I₂ salts polymer electrolytes were investigated to optimize the photovoltaic performance of solid state DSSCs. XRD pattern for the mole ratio 12:1 of [EO:KI] was showed the formation of complete amorphous complex. DSC results also confirmed the amorphous nature of the polymer electrolyte. The highest value of ionic conductivity is 8.36 × 10^− 5 S/cm at 303 K (ambient temperature) and 2.32 × 10^− 4 S/cm at 333 K (moderate temperature) for the mole ratio 12:1 of EO:KI complex. The effect of contribution of [I⁻] and [I₃⁻] concentration with conductivity were also evaluated. FTIR spectrum reveals that the alkali metal cations were co-ordinated to ether oxygen of PEO. The formation of polyiodide ions, such as symmetric I₃⁻ (114 cm^− 1) and I₅⁻ (145 cm^− 1) caused by the addition of iodine was confirmed by FT Raman spectroscopic measurements. The optimum composition of PEO–KI–I₂ polymer electrolyte system for higher conductivity at ambient and moderate temperatures was reported. A linear Arrhenius type behaviour was observed for all the PEO–KI polymer complexes. Transport number measurements were carried out for several polymer electrolyte compositions. Dye-sensitized solar cells were fabricated by using higher conductivity polymer electrolyte compositions and its photoelectrochemical performance was investigated. The fill factor, short-circuit current, photovoltage and energy conversion efficiency of the DSSC assembled with optimized electrolyte composition were calculated to be 0.563, 6.124 mA/cm², 593 mV and 2.044% respectively.     

Fabrication of thin-film transistor based on self-assembled single-walled carbon nanotube network

Thin-film transistor based on controllable electrostatic self-assembled monolayer single-wall carbon nanotubes (SWNTs) network has been fabricated by varying the density of nanotubes on the silicon substrate. The densities of SWNTs network have been investigated as a function of concentration and assembly time. It has been observed that the density of SWNTs network increases from 0.6 µm⁻² to 2.1 µm⁻², as the average on-state current (I_on) increases from 0.5 mA to 1.47 mA. The device has a current on/off ratio (I_on/I_off) of 1.3×10⁴ when I_on reaches to 1.34 mA.     

Investigation of a graded channel InGaAs/GaAs heterostructure transistor

An InGaAS/GaAs heterostructure transistor utilizing a gradedIn_xGa_1 − xAs channel grown by low-pressure metal-olorganic chemical vapor deposition has been demonstrated. A negative differential resistance (NDR) phenomenon is observed. Electron mobilities are significantly improved by using the graded InGaAs channel. For the In composition varying fromx =  0.25 (at the buffer–channel interface) to x =  0.1 (at the spacer–channel interface) structure, a peak extrinsic transconductance of 24.6 S mm ^− 1(atV_DS =  6.5 V,V_GSstep =  − 0.5 mV) and a saturation current density as high as 555 mA mm ^− 1for a gate length of 1.5 μ m are obtained.     

Growth and characterization of indium oxide films

In₂O₃ films have been deposited using chemical spray pyrolysis technique at different substrate temperatures that varied in the range, 250–450 °C. The structural and morphological properties of the as-deposited films were studied using X-ray diffractometer and scanning electron microscope as well as atomic force microscope, respectively. The films formed at a temperature of 400 °C showed body-centered cubic structure with a strong (2 2 2) orientation. The structural parameters such as the crystallite size, lattice strain and texture coefficient of the films were also calculated. The films deposited at a temperature of 400 °C showed an optical transmittance of >85% in the visible region. The change of resistivity, mobility, carrier concentration and activation energies with the deposition temperature was studied. The highest figure of merit for the layers grown at 400 °C was 1.09 × 10⁻³ Ω⁻¹.     

Polymer electrolytes based on cross-linked cyclotriphosphazenes

Substituted cyclotriphosphazenes were used to prepare lithium ion conducting polymer networks. Two types of compounds were synthesized starting with the precursor hexachlorocyclotriphosphazene (HCCP): Type I (CVEEP) in which all the chlorine atoms in HCCP were replaced by vinyloxyethoxyethoxy groups (VEE = –OCH₂CH₂OCH₂CH₂OCHCH₂), and type II (CVMEEP) in which half of the chlorine was replaced by VEE and the other half by methoxyethoxyethoxy groups (MEE = –OCH₂CH₂OCH₂CH₂OCH₃). The terminal vinyl groups were used to build up a network by a thermally initiated cross-linking of lithium salt containing membranes. Polymer electrolytes with dissolved LiSO₃CF₃ and LiN(SO₂CF₃)₂ were investigated by impedance measurements. The ionic conductivity of CVMEEP with 10 wt.% LiSO₃CF₃ was 3.2 × 10^− 5 S/cm at 30 °C and 4.1 × 10^− 4 S/cm at 90 °C. Lower conductivity values in the range 10^− 8–10^− 9 S/cm were obtained at 30 °C for the highly crosslinked CVEEP. An interesting polymer electrolyte with good mechanical properties and a good conductivity of 1.3 × 10^− 5 S/cm (30 °C) was obtained from a solution of MEEP (= poly[bis(methoxy–ethoxy–ethoxy)phosphazene]) and LiSO₃CF₃ in CVEEP as an interpenetrating network.     

A Boubaker polynomials expansion scheme (BPES)-related protocol for measuring sprayed thin films thermal characteristics

Measurements of In₂S₃ and ZnIn₂S₄ sprayed thin films thermal characteristics have been carried out using the photodetection technique. The thermal conductivity k and diffusivity D were obtained using a new protocol based on photothermal signal parameters analysis. Measured values of k and D were respectively, (15.2 ± 0.85) W m⁻¹K⁻¹ and (69.8 ± 7.1) × 10⁻⁶ m²s⁻¹ for In₂S₃, (7.2 ± 0.7) W m⁻¹K⁻¹ and (32.7 ± 4.3) × 10⁻⁶ m²s⁻¹ for ZnIn₂S₄. These values are extremely important since similar compounds are more and more proposed as Cd-free alternative materials for solar cells buffer layers.     

High room-temperature pyroelectric response of MgO-modified Pb0.99(Zr0.95Ti0.05)0.98Nb0.02O3 ceramics

The dielectric and pyroelectric responses of MgO-modified Pb_0.99(Zr_0.95Ti_0.05)_0.98Nb_0.02O₃ ceramics were investigated near F_R(LT)–F_R(HT) phase transition. It was found that MgO additive reduced the F_R(LT)–F_R(HT) phase transition temperature from 41 °C to room temperature (24 °C). Superior room-temperature pyroelectric properties were obtained in the composition of 0.10 wt% MgO addition without DC bias. The largest pyroelectric coefficient, 65 × 10⁻⁸ C cm⁻² K⁻¹, was detected. Accordingly, the detectivity figures of merit F_d had maximum values of 20 × 10⁻⁵ Pa^−1/2, and especially the voltage responsivity F_v = 0.91 m²C⁻¹ is the highest value reported so far among all pyroelectric materials. It shows promising potential for application in uncooled pyroelectric infrared detector.     

Hydrophilic polyaniline nanofibrous architecture using electrosynthesis method for supercapacitor application

An electrosynthesis process of hydrophilic polyaniline nanofiber electrode for electrochemical supercapacitor is described. The TGA–DTA study showed polyaniline thermally stable up to 323 K. Polyaniline nanofibers exhibit amorphous nature as confirmed from XRD study. Smooth interconnected fibers having diameter between 120–125 nm and length typically ranges between 400–500 nm observed from SEM and TEM analysis. Contact angle measurement indicated hydrophilic nature of polyaniline fibers. Optical study revealed the presence of direct band gap with energy 2.52 eV. The Hall effect measurement showed room temperature resistivity ∼3 × 10⁻⁴ Ω cm and Hall mobility 549.35 cm⁻²V⁻¹ s⁻¹_. The supercapacitive performance of nanofibrous polyaniline film tested in 1 M H₂SO₄ electrolyte and showed highest specific capacitance of 861 F g⁻¹ at the voltage scan rate of 10 mV/s.     

Lead free KNN/P(VDF-TrFE) 0–3 pyroelectric composite films and its infrared sensor

(K_0.5Na_0.5)NbO₃ (KNN)/[P(VDF-TrFE)70:30] composite thick films with different KNN weight ratios have been fabricated and the effect of KNN mass content on the material structure and properties have been studied in this paper. Properties of the infrared sensor based KNN/[P(VDF-TrFE)70:30] composite thick film were also systematically studied. It was found that the sample containing 30 wt.% KNN show optimal properties for pyroelectric appliance and the highest pyroelectric coefficient was 63 μCm⁻² K⁻¹. Infrared sensors using 30 wt.% KNN-70 wt.%[P(VDF-TrFE)70:30] show highest detectivity (D¹ = 3.21 × 10⁸ cm Hz^1/2 W⁻¹) at 137.3 Hz, indicating it is an promising candidate in lead-free quick response infrared detectors.     

Comparison of electrochromic amorphous and crystalline electron beam deposited WO3 thin films

Tungsten oxide (WO₃) thin films were prepared by an electron beam deposition technique. Films were deposited onto fluorine-doped tin oxide (FTO)-coated glass substrates maintained at 523 K. The as-deposited films were found to be amorphous and crystallized after annealing at 673 K. The electrochromic and optical properties, structure, and morphology are strongly dependent on the annealing conditions. Cyclic voltammetry (C-V) was carried out in the potential range −1 to +1 V. Before and after colouration, the films were characterized by measuring transmittance and reflectance. The colouration efficiencies at 630 nm are about 39.4 cm² C⁻¹ and 122.2 cm² C⁻¹ for amorphous and crystalline films, respectively. An investigation of self-bleaching for the coloured film revealed that the film fades gradually over time.