Quick response PZT/P(VDF-TrFE) composite film pyroelectric infrared sensor with patterned polyimide thermal isolation layer |
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| Institution: | 1. Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China;2. KAUST Catalysis Center (KCC), Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia;3. Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China;4. Guangdong Provincial Key Laboratory of Electronic Functional Materials and Devices, Huizhou University, Huizhou 516001, Guangdong, P. R. China;5. School of Materials Science and Engineering, Peking University, Beijing 100871, China;6. School of Materials Science and Engineering, School of Mechanical Engineering, Shijiazhuang Tiedao University, Shijiazhuang, 050043, China;7. Army Engineering University of PLA, State Key Laboratory for Disaster Prevention & Mitigation of Explosion & Impact, Nanjing, 210007, China;8. State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001, China;9. Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China;10. International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China;11. Collaborative Innovation Center of Quantum Matter, Beijing 100871, China;12. Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing 100871, China |
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| Abstract: | The fabrication method and the pyroelectric response of a single element infrared sensor based lead zirconate titanate (PZT) particles and polyvinylidene fluoride P(VDF-TrFE) copolymer composite thick film is reported in this paper. A special thermal insulation structure, including polyimide (PI) thermal insulation layer and thermal insulation tanks, was used in this device. The thermal insulation tanks were fabricated by laser micro-etching technique. Voltage responsivity (RV), noise voltage (Vnoise), noise equivalent power (NEP), and detectivity (D*) of the PZT/P(VDF-TrFE) based infrared sensor are 1.2 × 103 V/W, 1.25 × 10−6 V Hz1/2, 1.1 × 10−9 W and 1.9 × 108 cm Hz1/2 W−1 at 137.3 Hz modulation frequency, respectively. The thermal time constant of the infrared sensor τT was about 15 ms. The results demonstrate that the composite infrared sensor show a high detectivity at high chopper frequency, which is an essential advantage in infrared detectors and some other devices. |
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| Keywords: | Infrared sensor PZT/P(VDF-TrFE) Laser etching Thermal isolation |
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