熔体旋甩工艺对Zn掺杂Ⅰ-型Ba8Ga12Zn2Ge32笼合物微结构及热电性能的影响

采用新颖的熔体旋甩(MS)结合放电等离子烧结(SPS)技术制备了单相Zn掺杂的I-型Ba8Ga12Zn2Ge32笼合物,研究了熔体旋甩工艺对其微结构以及热电性能的影响.结果表明,MS得到的薄带自由面主要由300 nm-1 μm的小立方体单晶组成,薄带经SPS烧结后得到了具有大量层状精细结构的致密块体.与熔融+SPS工艺制备的试样相比,熔融+MS+SPS制备的Ba8Ga12Zn2Ge3笼合物室温载流子浓度增加而迁移率降低,在测试温度范围内,试样的电导率略有下降,Seebeck系数增加,热导率和晶格热导率显著降低,900 K时其晶格热导率从1.06 W/mK降低至0.42W/mK.熔融+MS+SPS制备的Ba8Ca12Zn2Ge32笼合物试样在900 K时其最大ZT值达到0.90,与熔融+SPS试样相比提高了75%.     

碳纳米管热传导的分子动力学模拟研究

采用改进的经验键序作用势描述碳原子间的相互作用,应用分子动力学方法和Green-Kubo函数计算了碳纳米管的热导率.在模拟中,使用了重叠计算的方法来计算热流相关函数,大大减少了模拟步数.计算结果表明,碳纳米管的热导率以原子间作用力相互做功所引起的热流形式为主;热导率的值随着直径的增加而减小;在室温下,热导率的值随着温度的增加而增加,达到室温后逐渐收敛于定值.计算的单壁碳纳米管热导率在1000W/mK至4000W/mK之间,计算结果与实验结果基本符合. 关键词： 分子动力学 碳纳米管 热导率     

纳米结构碲化铋合金的制备及电热输运特性

采用惰性气体保护蒸发-冷凝法制备了纳米Bi及Te粉末, 结合机械合金化和放电等离子烧结技术, 在不同烧结温度下制备出了单一物相且具有纳米层状结构及孪晶亚结构的n型Bi₂Te₃块体材料, 并系统研究了块体材料的晶粒尺度、微结构及其对电热传输特性的影响. SEM, TEM分析结果表明, 以纳米粉末为原料, 通过有效控制工艺条件, 可以制备出具有纳米层状结构Bi₂Te₃合金块体材料, 同时纳米层状结构中存在孪晶亚结构; 热电性能测试结果表明, 具有纳米层状结构及孪晶亚结构的块体试样与粗晶材料相比, 热导率大幅度降低, 在423 K附近, 热导率由粗晶材料的1.80 W/mK降至1.19 W/mK, 晶格热导率从1.16 W/mK降至0.61 W/mK, 表明纳米层状结构与孪晶亚结构共存, 有利于进一步提高声子散射, 降低晶格热导率. 其中在693 K放电等离子烧结后的试样于423K附近取得最大值的无量纲热电优值(ZT), 达到0.74.     

大规模制备Ni80Fe20纳米线阵列及其磁学特性研究

利用电化学沉积方法在高度有序纳米孔氧化铝模板中大规模制备了Ni80 Fe20纳米线阵列.该方法得到的Ni80Fe20纳米线产率高(约1012-1013/cm2),而且这些纳米线阵列具有(111)择优生长取向和很高的纵横比.与体材料相比,这些Ni80Fe20纳米线阵列具有更高的矫顽力和较大的剩磁比等性能,在微型磁性元件领域将具有广泛应用前景.     

ZnO纳米线紫外探测器的制备和快速响应性能的研究

一维ZnO纳米结构由于具有比表面积大、室温下具有大激子结合能等特点而受到广泛关注. 但是如何实现纳米结构的器件一直是目前研究的一个挑战. 文章通过水热方法, 在玻璃衬底上实现了ZnO纳米线横向生长, 并制备出基于ZnO纳米线的金属-半导体-金属紫外探测器. 测量结果显示器件在365 nm处探测器的响应度达到5 A/W, 并且制备的探测器在空气中对紫外光照具有快速的响应, 其上升时间约4 s, 下降时间约5 s, 这与ZnO纳米线中的氧空位吸附和脱附水分子相关.     

大规模制备Ni80Fe20纳米线阵列及其磁学特性研究

利用电化学沉积方法在高度有序纳米孔氧化铝模板中大规模制备了Ni80₈₀Fe 20₂₀纳米线阵列.该方法得到的Ni80₈₀Fe20₂₀ 纳米线产率高（约1012^{12—101313/cm22）, 而且这些纳米线阵列具有（111）择优生 长取向和很高的纵横比.与体材料相比,这些Ni80₈₀Fe20₂₀纳 米线阵列具 关键词： 纳米线阵列 磁性}     

Ba/Ag双掺杂对Ca3Co4O9基热电氧化物热传输性能的影响

采用溶胶-凝胶结合放电等离子烧结的方法制备了Ba, Ag双掺杂的Ba_xAg_yCa_2.8Co₄O₉块体热电氧化物材料, 利用X射线衍射仪, 扫描电子显微镜和热参数测试仪分析了所得样品的物相、微观组织结构和热输运性能. 结果表明, 通过Ba, Ag双掺杂有效调制了Ca₃Co₄O₉的热传输性能, 增加Ba掺杂量能有效降低其热导率. 分析结果表明, Ba, Ag双掺杂对热导率的调制来源于对晶格热导率的调制, 其中Ba, Ag等量掺杂所得样品热导率最低, 其总热导率和晶格热导率在973 K时分别达到了1.43 W/mK和1.10 W/mK. 关键词： 3Co₄O₉')" href="#">Ca₃Co₄O₉ 双掺杂 热导率     

高矫顽力的C0（70）Cu（30）合金纳米线阵列的制备及磁性研究

利用直流电化学沉积法,在多孔阳极氧化铝模板中首次制备出了具有[220]取向的单晶面心立方结构的CoCu固溶体合金纳米线阵列,其Co含量高达70%.透射电子显微镜显示纳米线均匀连续,具有较高的长径比,约为300.磁性测量表明所制备的Co（70）Cu（30）合金纳米线具有超高的矫顽力Hc//=2438 Oe（1 Oe=79.5775 A/m）和较高的矩形比S//=0.76,远高于以往报道的CoCu合金纳米线的磁性,分析表明磁性好的主要原因是由于较高Co含量和高形状各向异性.通过磁性测量和模型计算,得到Co（70）Cu（30）合金纳米线阵列在反磁化过程中遵从对称扇型转动的球链模型,并从结构的角度分析了Co（70）Cu（30）合金纳米线阵列的反磁化行为.     

纳米线阵列横向输运的热电特性研究

利用包络函数的平面波展开法计算准二维纳米线阵列中的电子态,获得电输运系数表达式.同时,通过合理近似考虑边界散射对声子输运的影响,计算得到了晶格热导率.以Si/Ge体系为例,研究了纳米线阵列横向输运的热电特性.结果表明：结构优值与费米能级、纳米线直径及间距等参数相关.通过对结构参数的调整,纳米线阵列的横向输运可有效提高热电性能. 关键词： 热电性能 纳米线阵列 Seebeck系数 晶格热导率     

水基ZnO纳米流体电导和热导性能研究

利用水热法生成了形状规则、粒径均匀的球形ZnO纳米颗粒, 并超声分散于水中, 制备得到稳定的水基ZnO纳米流体. 实验测量水基ZnO纳米流体在体积分数和温度变化时的电导率, 并测试室温下水基ZnO纳米流体在不同体积分数下的热导率. 实验结果表明, ZnO纳米颗粒的添加较大地提高了基液(纯水)的热导率和电导率, 水基ZnO纳米流体的电导率随纳米颗粒体积分数增加呈非线性增加关系, 而电导率随温度变化呈现出拟线性关系; 纳米流体的热导率与纳米颗粒体积分数增加呈近似线性增加关系. 本文在经典Maxwell热导模型和布朗动力学理论的基础上, 同时考虑了吸附层、团聚体和布朗运动等因素对热导率的影响, 提出了热导率修正模型.将修正模型预测值与实验值对比, 结果表明修正模型可以较为准确地计算出纳米流体的热导率. 关键词： 水热法 电导率 热导率 热导模型     

Measuring the thermal conductivity of a single carbon nanotube

Although the thermal properties of millimeter-sized carbon nanotube mats and packed carbon nanofibers have been readily measured, measurements for a single nanotube are extremely difficult. Here, we report a novel method that can reliably measure the thermal conductivity of a single carbon nanotube using a suspended sample-attached T-type nanosensor. Our experimental results show that the thermal conductivity of a carbon nanotube at room temperature increases as its diameter decreases, and exceeds 2000 W/mK for a diameter of 9.8 nm. The temperature dependence of the thermal conductivity for a carbon nanotube with a diameter of 16.1 nm appears to have an asymptote near 320 K. The present method is, in principle, applicable to any kind of a single nanofiber, nanowire, and even single-walled carbon nanotube.     

Thermal conductivity of PVD TiAlN films using pulsed photothermal reflectance technique

In the present work, we have measured thermal-conductivity of industrial thin film TiAlN with a thickness of around 3 μm. These films are used in machining industry for cutting tools in order to increase their service life. A series of TiAlN coating with a different Al/Ti atomic ratio were deposited on Fe-304 stainless steel (AISI304) substrate by a lateral rotating cathode arc process. The samples were then coated with a 0.8 μm gold layer on top by magnetron sputtering. We present the thermal-conductivity measurement of these samples using pulsed photothermal reflectance (PPR) technique at room temperature. The thermal conductivity of the pure TiN coating is about 11.9 W/mK. A significant decrease in thermal conductivity was found with increasing Al/Ti atomic ratio. A minimum thermal conductivity of about 4.63 W/mK was obtained at the Al/Ti atomic ratio of around 0.72.     

Thermal Conductivity of poly-p-phenylene-2,6-benzobisoxazole Film along the In-Plane Axis in the 10–300 K Temperature Range

The thermal conductivities of compression molded thin films of poly-p-phenylene-2,6-benzobisoxazole (PBO) were measured in directions along an in-plane axis in the 10–300?K temperature range by a steady-state heat flow method, with interest in the use of the material for superconductivity applications. The thermal conductivities of the PBO films increased from 0.3?W/mK to 9.0?W/mK with increasing temperature from 10?K to 300?K and these were much higher than those of polyimide films, epoxy resin and glass fiber reinforced plastics at all temperatures. The 9.0?W/mK at 300?K was 60% of that of stainless steel (SUS304). It was 6?W/mK at 150?K, which was half that of SUS304 and was 3.3?W/mK at 77?K, which was 33% of that of SUS304. The thermal conductivities of the PBO films were lower than those of a cloth of high strength ultrahigh molecular weight polyethylene fiber reinforced plastics in the 30?K–180?K temperature range and were almost equivalent to its values in the 180?K–300?K temperature range. The main contribution to the thermal conduction in the PBO films was from thermal phonon conduction along the molecular chains. Although many kinds of high thermal conductivity polymeric materials have been prepared by a uni-directional drawing process or by adding high thermal conductive additives, the PBO film showed high thermal conductivity without a uni-directional drawing process or high thermal conductive additive.     

Thermal properties of single-walled carbon nanotube crystal

In this work, the thermal properties of a single-walled carbon nanotube (SWCNT) crystal are studied. The thermal conductivity of the SWCNT crystal is found to have a linear dependence on temperature in the temperature range from 1.9 K to 100.0 K. In addition, a peak (658 W/mK) is found at a temperature of about 100.0 K. The thermal conductivity decreases gradually to a value of 480 W/mK and keeps almost a constant in the temperature range from 100.0 K to 300.0 K. Meanwhile, the specific heat shows an obvious linear relationship with temperature in the temperature range from 1.9 K to 300.0 K. We discuss the possible mechanisms for these unique thermal properties of the single-walled carbon nanotube crystal.     

Thermal conductivity of thermoelectric Al‐substituted ZnO thin films

ZnO:Al thin films with a low electrical resistivity were grown by magnetron sputtering on sapphire substrates. The cross‐plane thermal conductivity (κ = 4.5 ± 1.3 W/mK) at room temperature is almost one order of magnitude lower than for bulk materials. The thermoelectric figure of merit ZT at elevated temperatures was estimated from in‐plane power factor and the cross‐plane thermal conductivity at room temperature. It is expected that the thermal conductivity drops with increasing temperature and is lower in‐plane than cross‐plane. Consequently, the thin film ZT is at least three times higher than for bulk samples at intermediate temperatures. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Anisotropy and temperature dependences of thermal conductivity for silicon nanowires

The anisotropy and temperature dependences of thermal conductivity for silicon nanowires with diameters higher than 50 nm is investigated using the Callaway three-mode model. Contributions to the thermal conductivity from the boundary and bulk mechanisms of phonon scattering are calculated at room temperature. The relationship between the thermal conductivity and nanowire diameter is analyzed in symmetrical directions and at room temperature.     

Electronic structure,optical properties,and phonon transport in Janus monolayer PtSSe via first-principles study

Motivated by the synthesis of a Janus monolayer, the new PtSSe transition-metal dichalcogenide (TMD) have attracted remarkable attention due to their characteristic properties. In this work, we calculated the electronic structure, optical properties, and the thermal conductivity of the PtSSe monolayers, and performed a detailed comparison with other TMDs (monolayer PtS₂ and PtSe₂) using first-principles calculations. The calculated band gaps of the PtS₂, PtSSe, and PtSe₂ monolayers were 1.76, 1.38, and 1.21?eV, respectively, which are in good agreement with experimental data. At the same time, we observed a larger spin-orbit splitting in the electronic structure of PtSSe monolayers. The optical properties were also calculated and a significant red shift was observed from the PtS₂ to PtSSe to PtSe₂ monolayers. The lattice thermal conductivity of the PtSSe monolayer at room temperature (36.19?W/mK) is significantly lower than that of the PtS₂ monolayer (54.25?W/mK) and higher than that of the PtSe₂ monolayer (18.07?W/mK). Our results show that the PtSSe monolayer breaks structural symmetry and has the same ability to reduce the thermal conductivity as MoSSe and ZrSSe monolayers due to the shorter group velocity and the lower converged phonon scattering rate. These results may stimulate further studies on the electronic structure, optical properties, and thermal conductivity of the PtSSe monolayer in both experimental synthesis and theoretical efforts.