硫在Fe(100)面吸附的第一性原理研究

基于密度泛函理论的第一性原理方法,在广义梯度近似下,计算了硫原子在Fe(100)面吸附的结构和电子性质,并计算了其分子轨道和吸附能.同时讨论了相关吸附性质与硫原子表面覆盖度(0.25-1.0ML)的关系.结果表明：硫原子吸附在H位最稳定,吸附能均随浓度的增加而单调增加;B位吸附的硫原子与Fe(100)表面的距离随浓度非单调变化,在0.5ML时达到最大,是由较高的局域电子云重叠产生的排斥作用所导致的;对比分析吸附前后硫和Fe的s及p电子的态密度,显示了硫化亚铁的生成.     

硫在Fe(100)面吸附的第一性原理研究

基于密度泛函理论的第一性原理方法,在广义梯度近似下,计算了硫原子在Fe(100)面吸附的结构和电子性质,并计算了其分子轨道和吸附能.同时讨论了相关吸附性质与硫原子表面覆盖度(0.25～1.0ML)的关系.结果表明:硫原子吸附在H住最稳定,吸附能均随浓度的增加而单调增加;B位吸附的硫原子与Fe(100)表面的距离随浓度非单调变化,在0.5 ML时达到最大,是由较高的局域电子云重叠产生的排斥作用所导致;对比分析吸附前后硫和Fe的s及p电子的态密度,显示了硫化亚铁的生成.     

铁（Fe）原子改性石墨烯对沙林分子的吸附性质研究

利用第一性原理密度泛函理论,系统研究了本征石墨烯、单个Fe原子修饰石墨烯对沙林分子的吸附性质. 吸附能、电子态密度和密立根电荷密度等相关性质计算表明：本征石墨烯对沙林分子的吸附作用为弱的物理吸附；Fe原子的引入，明显增强了石墨烯基底对沙林的吸附作用，沙林分子态密度更加弥散，并且向低能方向移动，沙林分子与Fe改性石墨烯体系之间存在明显的电荷转移,吸附体系更加稳定. 相应工作的开展，为沙林毒剂分子的识别、防护提供了理论依据.     

CH_4、H_2O在CaCO_3(010)表面吸附的第一性原理研究

基于密度泛函理论第一性原理方法,研究了CH_4和H_2O在CaCO_3(010)面上各高对称位的吸附情况,优化了CH_4与H_2O在T位、 B位和H位的吸附模型结构,计算了其在各高对称位的吸附能,并对其各自最稳定的吸附位吸附前后的物理结构和电子态密度进行了对比分析.结果表明:CH_4、 H_2O分子分别在LBⅢ位、 SBⅢ位最稳定,吸附能分别为-0.405 eV、-0.138 eV,是一种物理吸附,吸附前后键长键角的变化较小,表现为亲气;吸附后CH_4和H_2O的态密度曲线整体向低能量区偏移约7.5 eV、 5eV,吸附后CH_4和H_2O结构都更加稳定,吸附作用对CH_4和H_2O分子的电子结构影响显著.     

CH_4、H_2O在CaCO_3(010)表面吸附的第一性原理研究

基于密度泛函理论第一性原理方法,研究了CH_4和H_2O在CaCO_3(010)面上各高对称位的吸附情况,优化了CH_4与H_2O在T位、B位和H位的吸附模型结构,计算了其在各高对称位的吸附能,并对其各自最稳定的吸附位吸附前后的物理结构和电子态密度进行了对比分析.结果表明:CH_4、H_2O分子分别在LBⅢ位、SBⅢ位最稳定,吸附能分别为-0.405 eV、-0.138 eV,是一种物理吸附,吸附前后键长键角的变化较小,表现为亲气;吸附后CH_4和H_2O的态密度曲线整体向低能量区偏移约7.5 eV、5eV,吸附后CH_4和H_2O结构都更加稳定,吸附作用对CH_4和H_2O分子的电子结构影响显著.     

CH_4、H_2O在CaCO_3(010)表面吸附的第一性原理研究

基于密度泛函理论第一性原理方法,研究了CH_4和H_2O在CaCO_3(010)面上各高对称位的吸附情况,优化了CH_4与H_2O在T位、B位和H位的吸附模型结构,计算了其在各高对称位的吸附能,并对其各自最稳定的吸附位吸附前后的物理结构和电子态密度进行了对比分析.结果表明:CH_4、H_2O分子分别在LBⅢ位、SBⅢ位最稳定,吸附能分别为-0.405 eV、-0.138 eV,是一种物理吸附,吸附前后键长键角的变化较小,表现为亲气;吸附后CH_4和H_2O的态密度曲线整体向低能量区偏移约7.5 eV、5eV,吸附后CH_4和H_2O结构都更加稳定,吸附作用对CH_4和H_2O分子的电子结构影响显著.     

N2H4在NiFe(111)合金表面吸附稳定性和电子结构的第一性原理研究

采用基于色散校正的密度泛函理论进行了第一性原理研究, 详细分析了肼(N₂H₄)在Ni₈Fe₈/Ni(111)合金表面稳定吸附构型的吸附稳定性和电子结构及成键性质. 通过比较发现, 肼分子以桥接方式吸附在表面的两个Fe原子上是最稳定的吸附构型, 其吸附能为-1.578 eV/N₂H₄. 同时发现, 肼分子在这一表面上吸附稳定性的趋势为: 桥位比顶位吸附更有利, 且在Fe原子上比在Ni原子上的吸附作用更强. 进一步分析了不同吸附位点上稳定吸附构型的电子结构、电荷密度转移以及电子局域化情况. 结果发现: 相同吸附位点的电子态密度图基本一致, 并且N原子的p轨道和与之相互作用的表面原子的d轨道之间存在态密度上的重叠; 吸附后电荷密度则主要从肼分子转移到表面原子之上; 在电子局域化函数切面图中也发现吸附后电子被局域到肼分子的N原子和相邻的表面原子之间. 这些电子结构的表征都充分说明肼分子与表面原子之间通过电荷转移形成了强烈的配位共价作用.     

硫原子在镍基合金825(001)面吸附的第一性原理研究

元素硫在镍基合金表面吸附产生严重的电化学腐蚀,为从原子尺度研究硫腐蚀机理,采用第一性原理方法,构建并优化了镍基合金825的晶胞结构模型,计算分析了S原子在镍基合金825耐蚀性较差面(001)晶面的吸附及电子转移情况.结果表明:Ni原子占据顶角, Cr原子和Fe原子对称占据面心是镍基合金825稳定的晶胞结构;原子S在镍基合金825(001)面上最稳定的吸附位为四重穴位,吸附能为-6.51 eV; S吸附前后的态密度(DOS)和二维电荷差分密度图(DCD)对比发现,镍基合金825中Fe与S之间电荷偏移明显,形成离子键,易生成腐蚀产物Fe_xS_y. S的吸附对镍基合金825中Cr原子的电子分布影响不大,且合金中Cr和Ni抑制了合金中Fe与S之间的相互作用,从而提高了合金耐蚀性.     

硫在Fe(111)面吸附的密度泛函研究

采用基于密度泛函理论的第一性原理方法,系统研究了不同覆盖度下硫在Fe(111)表面的吸附构型和吸附特性,计算并分析了硫在Fe(111)表面的吸附能、电荷密度、分波态密度、电荷布局、电子局域化函数等数据.研究结果表明:S在Fe(111)面的H位吸附最稳定,并且吸附能随着覆盖度的增加而增加.另外,电子态密度、电子局域化函数和布局分析表明Fe、S之间呈较弱的共价键,这种作用力主要是Fe的3d轨道和S的3p轨道杂化所贡献,而随着覆盖度的增加,Fe、S之间的作用力逐渐减弱,这可能是由于S原子之间的排斥力减弱了Fe、S之间的作用.S在Fe(111)、Fe(110)和Fe(100)这三个晶面上吸附情况的对比分析发现,S与Fe(111)表面的相互作用最强,Fe(100)面次之,而Fe(110)面最弱.     

Cs/GaN(0001)吸附体系电子结构和光学性质研究

采用基于第一性原理的密度泛函理论平面波超软赝势方法计算了 1/4ML Cs原子吸附 (2 × 2) GaN(0001) 表面的吸附能、能带结构、电子态密度、电荷布居数、功函数和光学性质. 计算发现, 1/4ML Cs 原子在 GaN(0001) 表面最稳定吸附位为 N 桥位, 吸附后表面仍呈现为金属导电特性, Cs原子吸附GaN(0001)表面后主要与表面 Ga 原子发生作用, Cs6s 态电子向最表面 Ga 原子转移, 引起表面功函数下降. 研究光学性质发现, Cs 原子吸附 GaN(0001) 表面后, 介电函数虚部、吸收谱、反射谱向低能方向移动.     

H2O分子在Fe（100）, Fe（110）, Fe（111）表面吸附的第一性原理研究

采用第一性原理研究了H₂O分子在Fe（100）,Fe（110）,Fe（111）三个高对称晶面上的表面吸附.结果表明,H₂O分子在三个晶面上的最稳定结构皆为平行于基底表面的顶位吸附结构.H₂O分子与三个晶面相互作用的吸附能及几何结构计算结果表明H₂O分子与三个晶面的相互作用程度不同,H₂O分子与Fe（111）晶面的相互作用最强,其次是Fe（100）,相互作用最弱的是Fe（110）表面,而这与晶面原子 关键词： 第一性原理 Fe单晶表面 2O分子')" href="#">H₂O分子 分子吸附     

Mechanism of H2S molecule adsorption on the GaAs(100) surface: Ab initio quantum-chemical analysis

Ab initio quantum-chemical cluster calculations within the density-functional theory were carried out to study the mechanism of H₂S molecule adsorption on the gallium-rich surface of GaAs(100). It was shown that adsorption can occur in four stages: molecular adsorption; dissociative adsorption, during which an HS radical is adsorbed on a gallium atom comprising a dimer while the detached hydrogen atom is adsorbed on another surface atom of the semiconductor; hydrogen adatom migration between neighboring surface atoms of the semiconductor; and the formation of a Ga-S-Ga bridge bond and of a hydrogen molecule. The stationary-state energies and energy barriers to transitions between these states were determined. The conclusions drawn based on an analysis of calculated diagrams of the potential energy of the processes that occur are in good agreement with the experimental data available in the literature.     

Adsorption of H<Subscript>2</Subscript>S,HS, S,and H on a stepped Fe(310) surface

Using periodic density functional theory we studied adsorption of H₂S, HS, S and H on the Fe(310) stepped surface, comparing our results with those on Fe(100). H₂S is predicted to weakly adsorb on all high-symmetry sites, with the bridge site at the step edge as preferred one, oriented perpendicularly to the (100) terraces with the two H atoms pointing out of the surface. Adsorption of HS, S, and H is more stable on the bridge, four-fold hollow, and three-fold hollow sites, respectively. The detailed analysis of the computed local density of states show common trends with the behavior of adsorption energies and is able to account for energy differences of all species adsorbed on Fe(100) and Fe(310).     

Hydrogen storage of beryllium adsorbed on graphene doping with boron: First-principles calculations

Based on density-functional theory, we find that B-doped graphene significantly enhances the Be adsorption energy and prevent Be atoms from clustering. The complex of Be adsorbed on B-doped graphene can serve as a high-capacity hydrogen storage medium: the hydrogen storage capacity (HSC) can reach up to 15.1 wt% with average adsorption energy ?0.298 eV/H₂ for double-sided adsorption. It has exceeded the target specified by US Department of Energy with HSC of 9 wt% and a binding energy of ?0.2 to ?0.6 eV/H₂ at near-ambient conditions. By analyzing the projected electronic density of states of the adsorbed system, we show that the high HSC is due to the change of electron distribution of H₂ molecules and a graphene system decorated with B and Be atoms.     

The role of adsorbed sulfur in the H2D2 equilibration reaction on Pt single crystals

The H₂D₂ equilibration on Pt single crystals was investigated under intermediate pressure (100–400 Torr) and temperature (50–250°C), as a function of sulfur coverage. On Pt(110) and Pt(111), adsorbed sulfur modifies the kinetic parameters, activation energy and pre-exponential factor; the latter depends on the temperature on Pt(110) only. The clean Pt(110) face was found to be 5 times more active than the clean Pt(111). On both faces, adsorption of sulfur induces electronic effects on the neighbouring reactional sites. The difference in the behaviour of the two faces and a clear influence of the arrangement of the adsorbed sulfur atoms, deduced from LEED diagrams, tend to prove the structure dependency of the H₂D₂ reaction. A consistent reaction mechanism could be proposed, involving the dissociative adsorption and surface recombination of hydrogen and deuterium, and the reaction between adsorbed molecules for high sulfur coverages. The value of the sulfur coverage which makes the platinum inactive towards H₂D₂ is lower for the (111) than for the (110) orientation; this is in correlation with the roughness of the surface; the denser at atomic scale a surface is, the further is the extent of the lateral interactions due to adsorbed sulfur.     

Adsorption of Fe on GaAs(100) Surface

The adsorption of one monolayer Fe atoms on an ideal GaAs (100) surface is studied by using the self-consistent tight-binding linear muffin-tin orbital method. The Fe adatom chemisorption on Ga- and As-terminatedsurface are considered separately. A monolayer of S atoms is used to saturate the dangling bonds on one of the supercellsurfaces. Energies of adsorption systems of an Fe atom on different sites are calculated, and the charge transfers areinvestigated. It is found that Fe-As interaction is stronger than Fe-Ga interaction and Fe atoms prefer to be adsorbed onthe As-terminated surface. It is possible for the adsorbed Fe atoms to sit below the As-terminated surface resulting inan Fe-Ga-As mixed layer. The layer projected density states are calculated and compared with that of the clean surface.     

硫在Fe(111)面吸附的密度泛函研究

采用基于密度泛函理论的第一性原理方法,系统研究了不同覆盖度下硫在Fe（111）表面的吸附构型和吸附特性,计算并分析了硫在Fe（111）表面的吸附能、电荷密度、分波态密度、电荷布局、电子局域化函数等数据. 研究结果表明：S在Fe（111）面的H位吸附最稳定,并且吸附能随着覆盖度的增加而增加. 另外,电子态密度、电子局域化函数和布局分析表明Fe、S之间呈较弱的共价键,这种作用力主要是Fe的3d轨道和S的2p轨道杂化所贡献,而随着覆盖度的增加,Fe、S之间的作用力逐渐减弱,这可能是由于S原子之间的排斥力减弱了Fe、S之间的作用. S在Fe（111）、Fe（110）和Fe（100）这三个晶面上吸附情况的对比分析发现,S与Fe（111）表面的相互作用最强,Fe（100）面次之,而Fe（110）面最弱.     

Modified gap states in Fe/MgO/SrTiO3 interfaces studied with scanning tunneling microscopy

The geometric and electronic structures of Fe islands on MgO film layers were studied with scanning tunneling microscopy and spectroscopy. The MgO layers were grown on a Nb-doped single crystal SrTiO₃ (100) surface. Deposited Fe atoms aggregate into islands, the height and diameter of which are about 2.5 and 9.4 nm respectively. Fe islands modify the electronic structure of MgO surface; a ring type depression in the scanning tunneling microscope topography appears by lowered local electron density of states around Fe islands. We find that adsorbed Fe atoms reduce the gap states of MgO layers around Fe islands, which is attributed to the reason for the depletion of the electronic density of states.     

单层GaSe表面Fe原子吸附体系电子自旋性质调控

Ⅲ族金属单硫化物因其优越的光电和自旋电子特性而备受关注,实现对其自旋性质的有效调控是发展器件应用的关键.本文采用密度泛函理论系统地研究了GaSe表面Fe原子吸附体系的几何构型及自旋电子特性.Fe/GaSe体系中Fe吸附原子与最近邻Ga,Se原子存在较强的轨道耦合效应,使体系呈现100%自旋极化的半金属性.其自旋极化贡献主要来源于Fe-3d电子的转移及Fe-3d,Se-4p和Ga-4p轨道杂化效应.对于Fe双原子吸附体系,两Fe原子之间的自旋局域导致原本从Fe转移至GaSe的自旋极化电荷量减少,从而费米能级附近的单自旋通道转变为双自旋通道,费米能级处的自旋极化率转变为0.研究结果揭示了Fe_n/GaSe吸附体系自旋极化特性的形成和转变机制,可为未来二维自旋纳米器件的设计与构建提供参考.