Investigation of the effect of finite-sized ions on the nanowire field-effect transistor in electrolyte concentration using a modified Poisson–Boltzmann model

One-dimensional (1D) nanowire field-effect transistors (FETs) have recently played a major role in sensing applications. Due to charging of the surface functional chemical groups with protonation and deprotonation, the transport properties of these nanowire transistors affect the aqueous environment, altering the electrical double layer (EDL) potential drops and charge distributions in the electrolyte concentration. In this work, we have implemented the simple modified Poisson–Boltzmann (MPB) theory in a 1D silicon nanowire FET, and the effect of the various finite sizes of ions in z:z symmetric electrolyte concentration was investigated. For a given ionic concentration and surface charge, the EDL potential drop, accumulation of charges and the charge distributions of NaCl and CsCl ions were studied. From the MPB model results with the nanowire FET, it was observed that the potential drop of the EDL depends on the size of the ions in the electrolyte. The study of various electrostatic investigations of finite-sized ions was successfully done by implementing the MPB model on a silicon nanowire FET. It can be used in both chemical and biological sensors.     

True reference nanosensor realized with silicon nanowires

Conventional gate oxide layers (e.g., SiO(2), Al(2)O(3), or HfO(2)) in silicon field-effect transistors (FETs) provide highly active surfaces, which can be exploited for electronic pH sensing. Recently, great progress has been achieved in pH sensing using compact integrateable nanowire FETs. However, it has turned out to be much harder to realize a true reference electrode, which--while sensing the electrostatic potential--does not respond to the proton concentration. In this work, we demonstrate a highly effective reference sensor, a so-called reference FET, whose proton sensitivity is suppressed by as much as 2 orders of magnitude. To do so, the Al(2)O(3) surface of a nanowire FET was passivated with a self-assembled monolayer of silanes with a long alkyl chain. We have found that a full passivation can be achieved only after an extended period of self-assembling lasting several days at 80 °C. We use this slow process to measure the number of active proton binding sites as a function of time by a quantitative comparison of the measured nonlinear pH-sensitivities to a theoretical model (site-binding model). Furthermore, we have found that a partially passivated surface can sense small changes in the number of active binding sites reaching a detection limit of δN(s) ≈ 170 μm(-2) Hz(-1/2) at 10 Hz and pH 3.     

Determination of molecular configuration by debye length modulation

Silicon nanowire field effect transistors (FETs) have emerged as ultrasensitive, label-free biodetectors that operate by sensing bound surface charge. However, the ionic strength of the environment (i.e., the Debye length of the solution) dictates the effective magnitude of the surface charge. Here, we show that control of the Debye length determines the spatial extent of sensed bound surface charge on the sensor. We apply this technique to different methods of antibody immobilization, demonstrating different effective distances of induced charge from the sensor surface.     

P-type 3C-SiC nanowires and their optical and electrical transport properties

We report for the first time the fabrication of p-type SiC nanowire field-effect transistors (FETs) using an individual Al-doped 3C-SiC nanowire with a single crystalline structure. The Raman spectroscopy of the as-grown p-type wire indicates that the linewidth and peak intensity of LO-phonon bands are sensitive to temperature variations.     

Enhanced electron field emission properties of high aspect ratio silicon nanowire-zinc oxide core-shell arrays

The enhanced electron field emission (EFE) properties of high aspect ratio, vertically aligned SiNW-ZnO core-shell arrays are presented. These core-shell arrays are prepared by a thin, controlled, highly crystalline and conformal coating of zinc oxide as shell using the plasma assisted-atomic layer deposition (PA-ALD) route on vertically aligned silicon nanowire arrays core. The core-shell nanostuctures are confirmed by HRTEM imaging along with the individual elemental mapping demonstrating the conformal deposition of 10 nm ZnO on the SiNWs. EFE properties of va-SiNW-ZnO core-shell arrays showed a high emission current density of 51 μA cm(-2) and a low turn on field of 7.6 V μm(-1) (defined at a current density of 1 μA cm(-2)) compared to the 3.2 μA cm(-2) emission current density and 9.1 V μm(-1) turn on field for SiNWs. The field enhancement factor (β) of 4227 for the devices demonstrates that these core-shell nanowire arrays are excellent field-emitters. Such an enhancement in the field emission originates from the details of the band structure of this peculiar material combination resulting in good electron transport from SiNW to ZnO as evident from the band diagram of the core-shell material. This is further supported by the conducting AFM studies where lowering in threshold voltage by 1 eV confirms the role of ZnO coating in the enhancement of the emission characteristics.     

1-Imino nitroxide pyrene for high performance organic field-effect transistors with low operating voltage

Organic field-effect transistors (OFETs) fabricated with vapor-deposited films of 1-imino nitroxide pyrene show excellent p-type FET characteristics, with mobility up to 0.1 cm2 V-1 s-1 and an on/off ratio of nearly 5 x 104. Most remarkable feature of the FETs is their low operating voltage due to the low threshold voltage (about -0.6 V) and inverse subthreshold slope (about 540 mV decade-1).     

ZnO-Al2O3 and ZnO-TiO2 core-shell nanowire dye-sensitized solar cells

We describe the construction and performance of dye-sensitized solar cells (DSCs) based on arrays of ZnO nanowires coated with thin shells of amorphous Al(2)O(3) or anatase TiO(2) by atomic layer deposition. We find that alumina shells of all thicknesses act as insulating barriers that improve cell open-circuit voltage (V(OC)) only at the expense of a larger decrease in short-circuit current density (J(SC)). However, titania shells 10-25 nm in thickness cause a dramatic increase in V(OC) and fill factor with little current falloff, resulting in a substantial improvement in overall conversion efficiency, up to 2.25% under 100 mW cm(-2) AM 1.5 simulated sunlight. The superior performance of the ZnO-TiO(2) core-shell nanowire cells is a result of a radial surface field within each nanowire that decreases the rate of recombination in these devices. In a related set of experiments, we have found that TiO(2) blocking layers deposited underneath the nanowire films yield cells with reduced efficiency, in contrast to the beneficial use of blocking layers in some TiO(2) nanoparticle cells. Raising the efficiency of our nanowire DSCs above 2.5% depends on achieving higher dye loadings through an increase in nanowire array surface area.     

Delayed ignition of autocatalytic combustion precursors: low-temperature nanomaterial binder approach to electronically functional oxide films

Delayed ignition of combustion synthesis precursors can significantly lower metal oxide film formation temperatures. From bulk In(2)O(3) precursor analysis, it is shown here that ignition temperatures can be lowered by as much as 150 °C. Thus, heat generation from ~60 nm thick In(2)O(3) films is sufficient to form crystalline In(2)O(3) films at 150 °C. Furthermore, we show that the low processing temperatures of sufficiently thick combustion precursor films can be applied to the synthesis of metal oxide nanocomposite films from nanomaterials overcoated/impregnated with the appropriate combustion precursor. The resulting, electrically well-connected nanocomposites exhibit significant enhancements in charge-transport properties vs conventionally processed oxide films while maintaining desirable intrinsic electronic properties. For example, while ZnO nanorod-based thin-film transistors exhibit an electron mobility of 10(-3)-10(-2) cm(2) V(-1) s(-1), encasing these nanorods within a ZnO combustion precursor-derived matrix enhances the electron mobility to 0.2 cm(2) V(-1) s(-1). Using commercially available ITO nanoparticles, the intrinsically high carrier concentration is preserved during nanocomposite film synthesis, and an ITO nanocomposite film processed at 150 °C exhibits a conductivity of ~10 S cm(-1) without post-reductive processing.     

Influence of surface states on electron transport through intrinsic Ge nanowires

Solution-grown single-crystal Ge nanowires were used as conductive channels in field effect transistor devices to study the influence of surface states on their electron transport properties. Nanowires contacted with Pt electrodes using focused ion beam metal deposition exhibited linear current-voltage (IV) curves at room temperature with apparent resistivities ranging from 10(1) to 10(-1) Omega cm. In all cases, the nanowire conductance decreased with positive external electric fields applied perpendicular to the nanowire surface by a gate electrode, characteristic of p-type carrier accumulation at the nanowire surface. The field-induced change in conductance exhibited a time-dependent relaxation, with response time and magnitude of current decrease that depended on the nanowire surface chemistry. Nanowires treated with an organic passivation layer using a thermally initiated hydrogermylation reaction exhibited 2 orders of magnitude slower current relaxation and a smaller decrease in current relative to "bare" nanowires with oxidized surfaces.     

Synthesis and Characterization of ZnO Nanowires

Zinc oxide is a wide bandgap (3.37 eV) semiconductor with a hexagonal wurtzite crystal structure. ZnO prepared in nanowire form may be used as a nanosized ultraviolet light-emitting source. In this study, ZnO nanowires were prepared by vapor-phase transport of Zn vapor onto gold-coated silicon substrates in a tube furnace heated to 900 ?C. Gold serves as a catalyst to capture Zn vapor during nanowire growth. Size control of ZnO nanowires has been achieved by varying the gold film thickness…     

Heterotermetallic indium lithium halostannates: low-temperature single-source precursors for tin-rich indium tin oxides and their application for thin-film transistors

The syntheses and structural elucidation of dimeric [Sn(OCyHex)(2)] (1), its corresponding (cyclohexoxy)alkalistannates(II) [{M(OCyHex)(3)Sn}(2)] (M = Li (2), Na (3), K (4)), and of the first heteroleptic heterotermetallic Li/In/Sn-haloalkoxide clusters [X(2)In{LiSn(2)(OCyHex)(6)}] (X = Br (5), Cl (6)) with a double seco-norcubane core are reported. They represent suitable precursors for new amorphous indium tin oxide (ITO) materials as transparent conducting oxides with drastically reduced concentrations of expensive indium, while maintaining their high electrical performance. In fact, compounds 5 and 6 were successfully degraded under dry synthetic air at relatively low temperature, resulting in new semiconducting tin-rich ITOs homogeneously dispersed in a tin oxide/lithium oxide matrix. The obtained particles were investigated and characterised by different analytical techniques, such as powder XRD, IR spectroscopy, SEM, TEM and energy-dispersive X-ray spectroscopy (EDX). The analytical data confirm that the final materials consist of tin-containing indium oxide embedded in an amorphous tin oxide matrix. The typical broadening and shift of the observed indium oxide reflections to higher 2θ values in the powder XRD pattern clearly indicated that tin centres were successfully incorporated into the In(2)O(3) lattice and partially occupied In(3+) sites. Investigations by EDX mapping proved that Sn was homogeneously distributed in the final materials. Thin-film field-effect transistors (FETs) were fabricated by spin-coating of silicon wafers with solutions of 5 in toluene and subsequent calcination under dry air (25-700?°C). The FETs prepared with precursor 5 exhibited excellent performances, as shown by a charge-carrier mobility of 6.36×10(-1) cm(2) V(-1) s (calcination at 250?°C) and an on/off current ratio of 10(6).     

2,6-Diarylnaphtho[1,8-bc:5,4-b'c']dithiophenes as new high-performance semiconductors for organic field-effect transistors

A series of 2,6-diaryl-substituted naphtho[1,8-bc:5,4-b'c']dithiophene derivatives 2-6, whose aryl groups include 5-hexyl-2-thienyl, 2,2'-bithiophen-5-yl, phenyl, 2-naphthyl, and 4-biphenylyl, was synthesized by the palladium-catalyzed Suzuki-Miyaura coupling and utilized as active layers of organic field-effect transistors (OFETs). All devices fabricated using vapor-deposited thin films of these compounds showed typical p-type FET characteristics. The mobilities are relatively good and widely range from 10(-4) to 10(-1) cm2 V(-1) s(-1), depending on the substituent groups. Among them, the mobilities of the devices using films of 3-5 tend to increase with the increasing temperature of the Si/SiO2 substrate during film deposition. In particular, the device based on the naphthyl derivative 5, when fabricated at 140 degrees C, marked a high mobility of 0.11 cm2 V(-1) s(-1) with an on/off ratio of 10(5), which is a top class of performance among organic thin-film transistors. Studies of X-ray diffractograms (XRDs) have revealed that the film of 4 and 5 is composed of two kinds of crystal grains with different phases, so-called "single-crystal phase" and "thin film phase", and that the proportion of the thin film phase increases with an increase of the substrate temperature. In the thin film phase the assembled molecules stand nearly upright on the substrate in such a way as to be favorable to carrier migration.     

Chemical bath deposition of ZnO nanowires at near-neutral pH conditions without hexamethylenetetramine (HMTA): understanding the role of HMTA in ZnO nanowire growth

Chemical bath deposition (CBD) is an inexpensive and reproducible method for depositing ZnO nanowire arrays over large areas. The aqueous Zn(NO(3))(2)-hexamethylenetetramine (HMTA) chemistry is one of the most common CBD chemistries for ZnO nanowire synthesis, but some details of the reaction mechanism are still not well-understood. Here, we report the use of in situ attenuated total reflection Fourier transform infrared (ATR-FTIR) spectroscopy to study HMTA adsorption from aqueous solutions onto ZnO nanoparticle films and show that HMTA does not adsorb on ZnO. This result refutes earlier claims that the anisotropic morphology arises from HMTA adsorbing onto and capping the ZnO {10 1 0} faces. We conclude that the role of HMTA in the CBD of ZnO nanowires is only to control the saturation index of ZnO. Furthermore, we demonstrate the first deposition of ZnO nanowire arrays at 90 °C and near-neutral pH conditions without HMTA. Nanowires were grown using the pH buffer 2-(N-morpholino)ethanesulfonic acid (MES) and continuous titratation with KOH to maintain the same pH conditions where growth with HMTA occurs. This semi-batch synthetic method opens many new opportunities to tailor the ZnO morphology and properties by independently controlling temperature and pH.     

Large-scale Ni-doped ZnO nanowire arrays and electrical and optical properties

Large-scale Ni-doped ZnO nanowire (NW) arrays are grown. The electrical conductivity of a single Ni-doped ZnO NW has been increased for 30 times. The photoluminescence (PL) spectrum of the doped ZnO NWs has a red shift, suggesting possible doping induced band edge bending. The doped NW arrays could be the basis for building integrated nanoscale transistors, sensors, and photodetectors.     

n-Type reduced graphene oxide field-effect transistors (FETs) from photoactive metal oxides

Graphene is of considerable interest as a next-generation semiconductor material to serve as a possible substitute for silicon. For real device applications with complete circuits, effective n-type graphene field effect transistors (FETs) capable of operating even under atmospheric conditions are necessary. In this study, we investigated n-type reduced graphene oxide (rGO) FETs of photoactive metal oxides, such as TiO(2) and ZnO. These metal oxide doped FETs showed slight n-type electric properties without irradiation. Under UV light these photoactive materials readily generated electrons and holes, and the generated electrons easily transferred to graphene channels. As a result, the graphene FET showed strong n-type electric behavior and its drain current was increased. These n-doping effects showed saturation curves and slowly returned back to their original state in darkness. Finally, the n-type rGO FET was also highly stable in air due to the use of highly resistant metal oxides and robust graphene as a channel.     

Grafting of phosphonate groups on the silica surface for the elaboration of ion-sensitive field-effect transistors

Ion-sensitive field-effect transistors (ISFETs) sensitive to Ca(2+) ions could be elaborated by means of a new grafting process of the phosphonate group at the surface of the silica gate of FETs. A grafting process involving only one chemical reaction step at the surface afforded a significant improvement of the ISFET properties. The sensitivity of the ISFET towards Ca(2+) ions at pH 10 was quasi-linear in the concentration range from 10(-1) to 10(-3) M, and the slope was 10 mV pCa(-1). The site-binding model works well in predicting the experimental data, giving the complexation constant of 10(2.7) and a low value of the grafting density. The origin of the poor response of ISFETs sensitized by means of a multistep grafting process was investigated on silica powders of high specific area: the cleavage of the organic grafts at the SiOSi bonds occurring at each step could be disclosed by means of elemental analyses, infrared, and cross-polarization and magic angle spinning nuclear magnetic resonance of the grafts.     

High-performance field-effect transistors based on Langmuir-Blodgett films of cyclo[8]pyrrole

We demonstrate the field-effect transistors (FETs) made of cyclo[8]pyrrole thin films prepared by the Langmuir-Blodgett (LB) method. The cyclo[8]pyrrole molecule possesses a 30-pi-electron system and narrower highest-occupied molecular orbital-lowest-unoccupied molecular orbital energy gap (0.63 eV), forms a stable, reproducible monolayer at the air-water interface, and transfers onto a substrate with a nearly unity transfer ratio and face-to-face configuration due to its strong pi-pi interaction. The LB films are uniform characterized by atomic force microscopy and in ordered form confirmed by X-ray diffraction. The FET exhibited high performances with one of the highest hole mobilities (0.68 cm2 V(-1) s(-1)) for thin-film transistors and a high on/off ratio, implying a promising material in the FET family.     

Microstructure evolution and device performance in solution-processed polymeric field-effect transistors: the key role of the first monolayer

Probing the role of the first monolayer in the evolution of the film polymer microstructure is essential for the fundamental understanding of the charge carrier transport in polymeric field-effect transistors (FETs). The monolayer and its subsequent microstructure of a conjugated polymer [poly(2,5-bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene), PBTTT] film were fabricated via solution deposition by tuning the dip-coating speed and were then studied as accumulation and transporting layers in FETs. Investigation of the microstructure of the layers prepared at different coating velocities revealed that the monolayer serves as an important base for further development of the film. Significant improvement of the charge carrier transport occurs only at a critical multilayer network density that establishes the required percolation pathways for the charge carriers. Finally, at a low dip-coating speed, the polymer chains are uniaxially oriented, yielding pronounced structural anisotropy and high charge carrier mobilities of 1.3 cm(2) V(-1) s(-1) in the alignment direction.     

溶液法制备的氧化锌多层膜及其场效应性质(英文)

通过旋涂法,采用不同浓度的前躯体制备了氧化锌多层膜,并制备了基于此多层膜的薄膜晶体管器件.实验证明,基于按照氧化锌前躯体浓度顺序为0.25、0.10和0.05 mol.L-1依次旋涂前躯体溶液制备的氧化锌薄膜的晶体管器件的载流子迁移率为0.02 cm.2V-.1s-1,高于按照浓度顺序为0.05、0.10和0.25 mol.L-1依次旋涂前躯体溶液制备的氧化锌薄膜的载流子迁移率(0.013 cm2.V-.1s-1).原子力显微镜(AFM)结果表明,前一种薄膜粗糙度的均方根值(rms)为3.95 nm,而后一种薄膜粗糙度的rms远远高于前者,为4.52 nm,这就说明了氧化锌薄膜的粗糙度对薄膜的半导体性质有很大的影响,这是由于平整的薄膜有利于形成理想的源/漏电极与半导体层的接触.在晶体管中,起传输作用的半导体层是靠近ZnO/SiO2界面处的几纳米的半导体层中的氧化锌晶粒,因此起始形成的氧化锌薄膜的结晶度影响着晶体管的性能.采用X射线衍射(XRD)测试了多层膜中起始形成的薄膜的结晶性能.对于前一种薄膜,起始形成的薄膜为多晶薄膜,而对于后一种薄膜,起始形成的薄膜是无定形薄膜.因此,粗糙度以及起始形成的薄膜的结晶度影响着多层半导体薄膜的性质.     

Surface-directed molecular assembly of pentacene on monolayer graphene for high-performance organic transistors

Organic electronic devices that use graphene electrodes have received considerable attention because graphene is regarded as an ideal candidate electrode material. Transfer and lithographic processes during fabrication of patterned graphene electrodes typically leave polymer residues on the graphene surfaces. However, the impact of these residues on the organic semiconductor growth mechanism on graphene surface has not been reported yet. Here, we demonstrate that polymer residues remaining on graphene surfaces induce a stand-up orientation of pentacene, thereby controlling pentacene growth such that the molecular assembly is optimal for charge transport. Thus, pentacene field-effect transistors (FETs) using source/drain monolayer graphene electrodes with polymer residues show a high field-effect mobility of 1.2 cm(2)/V s. In contrast, epitaxial growth of pentacene having molecular assembly of lying-down structure is facilitated by π-π interaction between pentacene and the clean graphene electrode without polymer residues, which adversely affects lateral charge transport at the interface between electrode and channel. Our studies provide that the obtained high field-effect mobility in pentacene FETs using monolayer graphene electrodes arises from the extrinsic effects of polymer residues as well as the intrinsic characteristics of the highly conductive, ultrathin two-dimensional monolayer graphene electrodes.