Critical current density and vortex dynamics in uranium irradiated Co-doped BaFe2As2

We report the effect of defects introduced by heavy-ion irradiation with 2.6 GeV uranium ions at several matching fields in single crystalline Ba(Fe_0.925Co_0.075)₂As₂. The suppression rate of T_c at lower matching fields is larger than that at higher matching fields. The critical current density calculated from magnetic hysteresis loop is enhanced up to 4.1 × 10⁶ A/cm² at 2 K. Clear dips in magnetic hysteresis loops near zero field are observed at high matching fields. Field dependence of normalized relaxation rate is suppressed, and the relationship between the dip and the relaxation rate is discussed.     

Fabrication of Ti doped MgB2/Cu superconducting wires by SHS method in an unsealed furnace

Mg_0.9Ti_0.1B₂/Cu wires have been successfully synthesized by the powder-in-tube (PIT) technique combined with the self-propagating high-temperature synthesis (SHS) method in an unsealed furnace. The analysis includes the studies of the sample microstructure, phase composition, critical transition temperature T_c and critical current density J_c. The experiments show that the PIT technique combined with the SHS method is effective in reducing the Mg volatilization and oxidation. There is little reaction between Mg and Cu in the SHS process, but with the MgCu₂ and CuO phases, the reaction does occur in the inner sheath wall of the copper tube. The findings also indicate that there is little MgO in the sample. The sample has a very strong flux pinning ability at the low magnetic fields since the TiB₂ phase may prevent the growth of MgB₂ grains and lead to a favorable effect on grain refinement. The wires exhibit a high critical current density, e.g. 2.7 × 10⁵ A/cm² in the 1.0 T field at 4.2 K and 1.3 × 10⁵ A/cm² in the 2.0 T field at 4.2 K.     

Improved high resistivity ZnS films on HgCdTe for passivation of infrared devices

We report the results of DC current–voltage characteristics, resistivity and conduction mechanism of 2500 Å thick ZnS films deposited by e-beam evaporation technique for applications of surface passivation in HgCdTe based devices. The typical near zero bias leakage currents were very low and varying from 37 fA to 1.1 pA corresponding to a resistivity variation of 2.2 × 10¹² to 1.0 × 10¹³ ohm cm for the well behaved devices. The films showed typically leakage current densities of under 3 × 10^?9 A/cm² near zero bias. These observations were further analyzed for conduction mechanism results prevailing in our films. As regards current transport, these films showed trends of Ohmic conduction in low electric field strengths, combination of Ohmic conduction and Frenkel–Poole (FP) for medium field strengths and FP conduction for high electric field strengths. All the experimental observations could be fitted very well using the said conduction mechanisms. We have shown that ZnS can continue to be used as passivant for modern high density area arrays based on HgCdTe and in order to further improve the performance of this passivant, one has to reduce FP conduction at high fields of greater than 0.25 MV/cm.     

3 MeV electron irradiation-induced defects in CuInSe2 thin films

3 MeV electron irradiation induced-defects in CuInSe₂ (CIS) thin films have been investigated. Both of the carrier concentration and Hall mobility were decreased as the electron fluence exceeded 1×10¹⁷ cm⁻². The carrier removal rate was estimated to be about 1 cm⁻¹. To evaluate electron irradiation-induced defect, the electrical properties of CIS thin films before and after irradiation were investigated between 80 and 300 K. From the temperature dependence of the carrier concentration in non-irradiated thin films, we obtained N_D=1.8×10¹⁷ cm⁻³, N_A=1.7×10¹⁶ cm⁻³ and E_D=18 meV from the SALS fitting to the experimental data on the basis of the charge balance equation. After irradiation, a new defect level was formed, and N_T0=1.4×10¹⁷ cm⁻³ and E_T=54 meV were also obtained from the same procedure. From the temperature dependence of Hall mobility, the ionized impurity density was discussed before and after the irradiation.     

Synthesis of ammonia at atmospheric pressure with Ce0.8M0.2O2−δ (M = La,Y, Gd,Sm) and their proton conduction at intermediate temperature

Ionic conduction in fluorite-type structure oxide ceramics Ce_0.8M_0.2O_2−δ (M = La, Y, Gd, Sm) at temperature 400–800 °C was systematically studied under wet hydrogen/dry nitrogen atmosphere. On the sintered complex oxides as solid electrolyte, ammonia was synthesized from nitrogen and hydrogen at atmospheric pressure in the solid states proton conducting cell reactor by electrochemical methods, which directly evidenced the protonic conduction in those oxides at intermediate temperature. The rate of evolution of ammonia in Ce_0.8M_0.2O_2−δ (M = La, Y, Gd, Sm) is up to 7.2 × 10^− 9, 7.5 × 10^− 9, 7.7 × 10^− 9, 8.2 × 10^− 9 mol s^− 1 cm^− 2, respectively.     

Investigating gate metal induced reduction of surface donor density in GaN/AlGaN/GaN heterostructure by electroreflectance spectroscopy

The internal field of GaN/AlGaN/GaN heterostructure on Si-substrate was investigated by varying the thickness of an undoped-GaN capping layer using electroreflectance spectroscopy. The four samples investigated are AlGaN/GaN heterostructure without a GaN cap layer (reference sample) and three other samples with GaN/AlGaN/GaN heterostructures in which the different thickness of GaN cap layer (2.7 nm, 7.5 nm, and 12.4 nm) has been considered. The sheet carrier density (n_s) of a two-dimensional electron gas has decreased significantly from 4.66 × 10¹² cm⁻² to 2.15 × 10¹² cm⁻² upon deposition of a GaN capping layer (12.4 nm) over the reference structure. Through the analysis of internal fields in each GaN capping and AlGaN barrier layers, it has been concluded that the undiminished surface donor states (n_s) of a reference structure and the reduced n_s caused by the Au gate metal are approximately 5.66 × 10¹² cm⁻² and 1.08 × 10¹² cm⁻², respectively.     

InAs/GaSb strained layer superlattice detectors with nBn design

We have investigated the electrical and optical properties of an nBn based Type-II InAs/GaSb strained layer superlattice detector as a function of absorber region background carrier concentration. Temperature-dependent dark current, responsivity and detectivity were measured. At T = 77 K and V_b = 0.1 V, with two orders of magnitude change in doping concentration, the dark current density increased from ～0.3 mA/cm² to ～0.3 A/cm². We attribute this to a depletion region that exists at the AlGaSb barrier and the SLS absorber interface. The device with non-intentionally doped absorption region demonstrated the lowest dark current density (0.3 mA/cm² at 0.1 V) with a specific detectivity D¹ at zero bias equal to 1.2 × 10¹¹ Jones at 77 K. The D¹ value decreased to 6 × 10¹⁰ cm Hz^1/2/W at 150 K. This temperature dependence is significantly different from conventional PIN diodes, in which the D¹ decreases by over two orders of magnitude from 77 K to 150 K, making nBn devices a promising alternative for higher operating temperatures.     

A study on ac and dc conductivity characteristics of Y-doped BaCeO3 modified by Ar+ ion beam

The effects of surface modification on electrical characteristics in bulk, grain boundary and interface (electrolyte/electrode) of BaCe_0.9Y_0.1O_3-δ were investigated. The surface modification was performed by means of two processes: specimen was firstly irradiated by 10 keV Ar⁺ ion with dose of 1 × 10¹⁸ ions/cm² and then exposed to air. The modified surface was investigated by elastic recoil detection analysis (ERDA) for quantitative analysis of hydrogen concentration on the surface and alternating current (AC) and direct current (DC) conductivity measurements, respectively. The ERDA results showed that hydrogen concentration and reaction rate on the modified surface increased. The increase of hydrogen concentration was explained in terms of the increase of proton due to interaction between oxygen vacancy formed by modification and H₂O. In AC and DC electrical conductivity measurements, it concluded that the proton and electronic carrier generated on the surface by modification attributed to the increase of bulk, grain boundary and interface conductivity.     

Chemical bath deposition of SnO2 and Cd2SnO4 thin films

A new approach of chemical bath deposition (CBD) of SnO₂ thin films is reported. Films with a 0.2 μm thickness are obtained using the multi-dip deposition approach with a deposition time as little as 8–10 min for each dip. The possibility of fabricating a transparent conducting oxide layer of Cd₂SnO₄ thin films using CBD is investigated through successive layer deposition of CBD-SnO₂ and CBD-CdO films, followed by annealing at different temperatures. High quality films with transmittance exceeding 80% in the visible region are obtained. Annealed CBD-SnO₂ films are orthorhombic, highly stoichiometric, strongly adhesive, and transparent with an optical band gap of ～4.42 eV. Cd₂SnO₄ films with a band gap as high as 3.08 eV; a carrier density as high as 1.7 × 10²⁰ cm^?3; and a resistivity as low as 1.01 × 10^?2 Ω cm are achieved.     

Terahertz emission dependence on the intensity ratio of 400–800 nm in generating terahertz waves from two-color laser-induced gas plasma

A transient photocurrent model is used to explain terahertz emission from gas plasma irradiated by a laser pulse and the second harmonic. By introducing the second harmonic, 400 nm, the corresponding terahertz emission is greatly enhanced. The exact dependence of terahertz emission on the intensity ratio of 400–800 nm is studied for the case with total intensity of 5.00 × 10¹⁴ W/cm². Results show the emission reaches the maximum at about the case for energy distribution of I_ω = 4.00 × 10¹⁴ W/cm², I_2ω = 1.00 × 10¹⁴ W/cm².     

Effect of film thickness on the transport properties of MgB2 synthesized by spray pyrolysis

Polycrystalline MgB₂ films of different thickness have been prepared by employing spray pyrolysis technique on MgO (1 0 0) substrate. The MgB₂ and other phases have been confirmed using X-ray diffraction technique and no trace of impurities phases have been found. The resistivity behavior shows that the superconducting transition temperature lies in the range of 37–39 K with narrow transition width. The transport critical current density vary with films thickness and achieved highest value ～1.2 × 10⁶ A/cm² at 20 K for 2.0 μm thick film and its values increase as thickness increases.     

Preparation and characterization of F doped SnO2 films and electrochromic properties of FTO/NiO films

The dependence of structural and electrical properties of SnO₂ films, prepared using spray pyrolysis technique, on the concentration of fluorine is reported. X-ray diffraction, FTIR and scanning electron microscope (SEM) studies have been performed on SnO₂:F (FTO) films coated on glass substrates. Measured values of Hall coefficient and resistivity are reported. The 7.5 m% of F doped film had a resistivity of 15 × 10⁻⁴ Ω cm, carrier density of 18.7 × 10¹⁹ cm⁻³ and mobility of 21.86 cm² V⁻¹ S⁻¹. The NiO film was coated on an FTO substrate and its electrochromic (EC) behavior was studied and the results are reported and discussed in this paper.     

MWA and scanning-probe study of argon-ion irradiation effects on superconducting properties of Bi2Sr2CaCu2O8 thin films

Bi₂Sr₂CaCu₂O₈ films with thickness of 200 and 800 nm were irradiated with monovalent argon ions with an energy of 40 keV and a dose ranging between 10¹⁴ and 10¹⁷ ion/cm². The dose dependences of (i) the superconducting transition temperature, (ii) the critical current density value and (iii) the irreversibility line position on the magnetic field-temperature phase diagram were determined for two series of samples of different thickness. Atomic force microscopy images of the irradiated samples showed an appearance of defects in the form of surface holes. The obtained data were used to establish conditions for improving properties of thin-film superconducting materials. Firstly, the irradiation dose should be at least 10¹⁶ ion/cm² to form embedded gas bubbles and surface holes serving as artificial pinning centers. Secondly, the film thickness and the average depth of the defect formation should be of a comparable value and sufficiently exceed the thickness of the surface layer sputtered as a result of irradiation.     

InGaAsP/InP photodetectors targeting on 1.06 μm wavelength detection

InP-based InGaAsP photodetectors targeting on 1.06 μm wavelength detection have been grown by gas source molecular beam epitaxy and demonstrated. For the detector with 200 μm mesa diameter, the dark current at 10 mV reverse bias and R₀A are 8.89 pA (2.2 × 10⁻⁸ A/cm²) and 3.9 × 10⁵ Ω cm² at room temperature. The responsivity and detectivity of the InGaAsP detector are 0.30 A/W and 1.45 × 10¹² cm Hz^1/2 W⁻¹ at 1.06 μm wavelength. Comparing to the reference In_0.53Ga_0.47As detector, the dark current of this InGaAsP detector is about 570 times lower and the detectivity is more than ten times higher, which agrees well with the theoretical estimation.     

Synthesis of oligomeric poly[(1, 2-propanediamine)-alt-(oxalic acid)] and anomalous proton conductivities of the thin films

New proton-conductive polyamide oligomers, oligomeric poly[(1, 2-propanediamine)-alt-(oxalic acid)], were synthesized to investigate the proton transport properties of bulk and thin films. The obtained oligomers were characterized by the X-ray diffraction, FT-IR spectra, ¹H NMR, Matrix Assisted Laser Desorption/Ionization Time of Flight (MALDI-TOF) mass spectrum, and electrical conductivity measurements. The bulk proton conductivity is 3.0 × 10^? 4 S cm^? 1 at the relative humidity (RH) of 80%. The proton conductivity of thin film is relatively higher than that of bulk sample. Thickness dependence of the proton conductivity was observed in these thin films. The maximum proton conductivity of the thin film is 4.0 × 10^? 3 S cm^? 1 at the relative humidity (RH) of 80%, which is higher one order magnitude than that of the bulk sample. The activation energies of bulk and 200 nm thick film are 1.0 and 0.69 eV at the RH of 60%, respectively.     

InAs/GaNAs strain-compensated quantum dots stacked up to 50 layers for use in high-efficiency solar cell

We have investigated the effect of strain compensation on the structural and optical properties of multiple stacked InAs quantum dots (QDs) on GaAs (0 0 1) substrates grown by atomic hydrogen-assisted RF-MBE. Strain relaxation was not observed from the reciprocal space mapping, and as a result, dislocations and coalesced islands were not observed in 50 layer-stacked QDs. Thus, the total QD density of as high as 2.5×10¹² cm⁻² was achieved. For QD solar cell characterization, the short-circuit current density increased from 21.0 to 26.4 mA/cm² as the number of stacks was increased from 20 to 50. Further increase of stacks did not affect the open-circuit voltage of ∼0.7 V and diode factor of ∼1.6, which implies that high crystalline quality was maintained even after 50 layers of stacking.     

Synthesis and characterization of excess magnesium MgB2 superconductor under inert carbon environment

The structural, transport and magnetic properties of MgB₂ superconductor heavily blended with Mg is studied. The samples are synthesized with a new approach in both, pressed carbon environment and in flowing argon. The excess magnesium used is observed to play dual role: one being the prevention of Mg losses during the synthesis process and hence maintaining the stoichiometry of MgB₂ phase, and second being the formation of Mg milieu probably all around the MgB₂ grains to give a dense structure. Excess Mg also improves the grain connectivity by going into the pores and there by minimizing the insulating junctions. The residual resistivity of the sample is observed to decrease from 57.02 μΩ cm to 10.042 μΩ cm as it is progressively filled with superconductor–normal–superconductor (SNS) type junctions amongst the grains by the virtue of increased magnesium content. The synthesized samples devoid of porosity show the superconducting transition, T_c in the range of 39–34 K as of clean MgB₂ samples, though overloaded with Mg. The excess Mg resulted in enhanced critical current density, J_c from 6.8 × 10³ A cm^?2 to 5.9 × 10⁴ A cm^?2 at 20 K and 10 kOe, with reasonable decrease in the superconducting transition. Thus our samples being overloaded with Mg impart mechanical strength and competitive superconducting properties, which forms a part of interest.     

Monochromatic soft X-ray-induced reactions of CCl2F2 adsorbed on Si(111)-7 × 7 near the Si(2p) edge

Continuous-time photoelectron spectroscopy (PES) and continuous-time core-level photon-stimulated desorption (PSD) spectroscopy were used to study the monochromatic soft X-ray-induced reactions of CCl₂F₂ molecules adsorbed on Si(111)-7 × 7 at 30 K (CCl₂F₂ dose = 2.0 × 10¹⁴ molecules/cm², ~ 0.75 monolayer) near the Si(2p) core level. Evolution of adsorbed CCl₂F₂ molecules was monitored by using continuous-time photoelectron spectroscopy at two photon energies of 98 and 120 eV to deduce the photolysis cross section as a function of energy. It was found that the photolysis cross sections for 98 and 120 eV photons are _~1.4 × 10^? 18 and ~ 8.0 × 10^? 18 cm², respectively. Sequential F⁺ PSD spectra obtained by using continuous-time core-level photon-stimulated desorption spectroscopy in the photon energy range of 98–110 eV show the variation of their shapes with photon exposure and depict the formation of surface SiF species. The dissociation of CCl₂F₂ molecules adsorbed on Si(111)-7 × 7, irradiated by monochromatic soft X-ray in the photon energy range of 98–110 eV, is mainly due to dissociative electron attachment and indirect dipolar dissociation induced by photoelectrons emitted from the silicon surface.     

Intrinsic pinning properties of FeSe0.5Te0.5

The intrinsic pinning properties of FeSe_0.5Te_0.5, which is a superconductor with a critical temperature T_c of approximately 14 K, were studied through the analysis of magnetization curves obtained using an extended critical state model. For the magnetization measurements carried out with a superconducting quantum interference device (SQUID), external magnetic fields were applied parallel and perpendicular to the c-axis of the sample. The critical current density J_c under the perpendicular magnetic field of 1 T was estimated using the Kimishima model to be equal to approximately 1.6 × 10⁴, 8.8 × 10³, 4.1 × 10³, and 1.5 × 10³ A/cm² at 5, 7, 9, and 11 K, respectively. Furthermore, the temperature dependence of J_c was fitted to the exponential law of J_c(0) × exp(?αT/T_c) up to 9 K and the power law of J_c(0) × (1 ? T/T_c)ⁿ near T_c.     

Bulk and surface properties of ionic salt CsH5(PO4)2

We report a comparative study of transport and thermodynamic properties of single-crystal and polycrystalline samples of the ionic salt CsH₅(PO₄)₂ possessing a peculiar three-dimensional hydrogen-bond network. The observed potential of electrolyte decomposition ≈ 1.3 V indicates that the main charge carriers in this salt are protons. However, in spite of the high proton concentration, the conductivity appears to be rather low with a high apparent activation energy E_a ≈ 2 eV, implying that protons are strongly bound. The transport anisotropy though is not large, correlates with the crystal structure: the highest conductivity is found in the [001] direction (σ_130 °C ∼ 5.6 × 10^− 6 S cm^− 1) while the minimal conductivity is in the [100] direction (σ_130 °C ∼ 10 ⁻⁶ S cm^− 1). The conductivity of polycrystalline samples appears to exceed the bulk one by 1–3 orders of magnitude with a concomitant decrease of the activation energy (E_a ≈ 1.05 eV), which indicates that a pseudo-liquid layer with a high proton mobility is formed at the surface of grains. Infrared and Raman spectroscopy used to study the dynamics of the hydrogen-bond system in single-crystal and polycrystalline samples have confirmed the formation of such a modified surface layer in the latter. However, no bulk phase transition into the superionic disordered phase is observed in CsH₅(PO₄)₂ up to the melting point T_melt ∼ 151.6 °C, in contrast to its closest relative compound CsH₂PO₄.