Characteristics of N-doped TiO2 thin films grown on unheated glass substrate by inductively coupled plasma assisted dc reactive magnetron sputtering

N-doped TiO₂ thin films have been deposited on unheated glass substrates by an inductively coupled plasma (ICP) assisted direct current (dc) reactive magnetron sputtering. All films were produced in the metallic mode of sputtering in order to achieve a high deposition rate. The structures and properties of the N-doped TiO₂ films were studied by X-ray diffraction, X-ray photoelectron spectroscopy, transmission electron microscopy, field emission scanning electron microscopy and UV–Vis spectrophotometer. Experimental results show that we can obtain well crystallized N-doped anatase phase TiO₂ thin films at low deposition temperature and at high deposition rate by using the ICP assisted dc reactive magnetron sputtering process. The doping of nitrogen into TiO₂ lattices leads to a smooth shift of the absorption band toward visible light regions.     

不同氧气流量对直流磁控溅射TiO2薄膜的影响

采用直流反应磁控溅射法,以高纯Ti为靶材,高纯O₂为反应气体,制备了TiO₂薄膜.研究了氧气流量对薄膜结晶取向、表面形貌和光学性能的影响.研究发现,TiO₂薄膜主要呈锐钛矿TiO₂(101)择优取向,当氧气流量较小时,薄膜中还含有金属Ti(100),氧气流量较大时,薄膜含TiO₂(101)和TiO₂(004),成多晶态;薄膜的粗糙度和颗粒大小都随氧气流量的增大而增大;薄膜在400~1100nm可见-近红外波段有较高的透射率并且其吸收峰随着氧气流量的增大而红移,当氧气流量为5sccm时,平均透射率最高.     

Influence of Ti nanocrystallization on microstructure, interface bonding, surface energy and blood compatibility of surface TiO2 films

Recent progress in ultrafine-grained/nano-grained (UFG/NG) titanium permits a consideration for TiO₂ films deposited on nano-grained titanium for antithrombogenic application such as artificial valves and stents. For this paper, the microstructure, interface bonding, surface energy, and blood compatibility features of TiO₂ films deposited by direct current magnetron reactive sputtering technology on NG titanium and coarse-grained (CG) titanium were investigated. The results show that the nanocrystallization of titanium substrate has a significant influence on TiO₂ films. At the same deposition parameters, the content of rutile phase of TiO₂ film was increased from 47% (on the CG titanium substrate) to 72% (on the NG titanium substrate); the adhesion of TiO₂ film was improved from 5.8 N to 17 N; the surface energy was reduced from 6.37 dyn/cm to 3.01 dyn/cm; the clotting time was improved from 18 min to 28 min; the platelets accumulation and pseudopodium of adherent platelets on TiO₂ film on NG titanium were considerably reduced compared to that on CG titanium. The present results demonstrate the possibility of improving the blood compatibility of TiO₂ film through the approach of substrate nanocrystallization. Also it may provide an attractive idea to prepare stents with biological coatings of more outstanding blood compatibility and interface bonding.     

Cu/TiOx复合薄膜的电子态分析及其对亲水性的影响

在室温下,采用射频磁控溅射法制备了Cu/TiO_x纳米晶复合薄膜.利用X射线粉末衍射（XRD）、X射线光电子能谱（XPS）对其结构进行表征,并研究了Cu/TiO_x复合薄膜的UV-vis吸收谱和亲水性.结果表明,退火前后薄膜中钛元素皆以Ti³⁺形式存在.薄膜在可见区有吸收,吸收限为600 nm左右.Cu/TiO_x复合薄膜具有良好的亲水性.这主要是由于Cu的掺杂,使得薄膜的性能的亲水性变好. 关键词： x复合薄膜')" href="#">Cu/TiO_x复合薄膜 射频磁控溅射 XPS 亲水性     

EFFECT OF ZnFe22O4 DOPING ON THE OPTICAL PROPERTIES OF TiO2 THIN FILMS

Amorphous TiO₂ thin films and ZnFe₂O₄ doped TiO₂ composite films were deposited by radio frequency magnetron sputtering. The effect of ZnFe₂O₄ doping on the optical properties of TiO₂ thin films was reported. Our results show that the absorption edge of TiO₂ thin films and composite films exhibits a blue shift with decreasing annealing temperature. The absorption edge of composite films has moved to visible spectrum range, and a very large red shift occurs in comparison with TiO₂ thin film. An enhanced photoluminescence in ZnFe₂O₄ doped anatase TiO₂ thin film at room temperature.     

Nb doping effect on TiO2−x films for bolometer applications

Nb-doped TiO_2−x thin films were deposited using a 1 at% niobium doped titanium target by RF reactive magnetron sputtering at various oxygen partial pressures (pO₂). The films appeared amorphous in the pO₂ range of 4.4–4.7% with resistivity ranging from 0.39 Ω cm to 2.48 Ω cm. Compared to pure TiO_2−x films, the resistivity of the Nb-doped TiO_2−x films did not change sensitively with the oxygen partial pressure, indicating that the resistivity of the films can be accurately controlled. 1/f noise parameter of Nb-doped TiO_2−x films were found to decrease largely while the measured temperature coefficient of resistance (TCR) of the films was still high. The obtained results indicate that Nb-doped TiO_2−x films have great potential as an alternative bolometric material.     

离子注入掺杂锐钛矿TiO2薄膜的光学性能

 在玻璃基体上,采用射频磁控溅射方法在不同的基体温度下制备了TiO₂薄膜,然后在薄膜中注入注量分别为5×1016, 1×1017和5×1017/cm2的N离子以制备N掺杂的TiO₂薄膜。X射线衍射结果表明：制备出的TiO₂薄膜为锐钛矿型。X射线光电子能谱研究结果表明：注入的N离子与TiO₂晶粒相互作用,形成了含氮的TiO_xN_2-x化合物,从而改变了TiO₂薄膜的吸收边;随N离子注量增加,吸收边移动更明显;同时,由于氮离子注入产生的辐照缺陷使TiO₂薄膜在紫外和可见光区的吸收也明显增强。     

多孔TiO2/Al/SiO2纳米复合结构的紫外光吸收特性研究

在SiO₂玻璃衬底上用脉冲激光沉积(PLD)技术，分别沉积Ti和Ti/Al膜，经电化学阳极氧化成功制备了多孔TiO₂/SiO₂和TiO₂/Al/SiO₂纳米复合结构. 其中TiO₂薄膜上的微孔阵列高度有序，分布均匀. 实验研究了Al过渡层对多孔TiO₂薄膜光吸收特性的影响. 结果表明：无Al过渡层的多孔TiO₂薄膜其紫外吸收峰在27     

多孔TiO2/Al/SiO2纳米复合结构的紫外光吸收特性研究

在SiO₂玻璃衬底上用脉冲激光沉积(PLD)技术,分别沉积Ti和Ti/Al膜,经电化学阳极氧化成功制备了多孔TiO₂/SiO₂和TiO₂/Al/SiO₂纳米复合结构. 其中TiO₂薄膜上的微孔阵列高度有序,分布均匀. 实验研究了Al过渡层对多孔TiO₂薄膜光吸收特性的影响. 结果表明：无Al过渡层的多孔TiO₂薄膜其紫外吸收峰在27 关键词： 2薄膜')" href="#">多孔TiO₂薄膜 阳极氧化 紫外光吸收     

Optical properties of ITO/TiO2 single and double layer thin films deposited by RPLAD

Indium tin oxide (ITO) and titanium dioxide (TiO₂) single layer and double layer ITO/TiO₂ films were prepared using reactive pulsed laser ablation deposition (RPLAD) with an ArF excimer laser for applications in dye-sensitized solar cells (DSSCs). The films were deposited on SiO₂ substrates either at room temperatures (RT) or heated to 200-400 °C. Under optimized conditions, transmission of ITO films in the visible (vis) range was above 89% for films produced at RT and 93% for the ones deposited at higher temperatures. Increasing the substrate temperature from RT to 400 °C enhances the transmission of TiO₂ films in the vis-NIR from about 70% to 92%. High transmission (≈90%) was observed for the double layer ITO/TiO₂ with a transmission cut-off above 900 nm. From the transmission data, the energies gaps (E_g), as well as the refractive indexes (n) for the films were estimated. n ≈ 2.03 and 2.04, respectively for ITO films and TiO₂ film deposited at 400 °C in the visible region. Post-annealing of the TiO₂ films for 3 h at 300 and 500 °C was performed to enhance n. The refractive index of the TiO₂ films increases with the post-annealing temperature. The direct band gap is 3.6, 3.74 and 3.82 eV for ITO films deposited at RT, 200, and 400 °C, respectively. The TiO₂ films present a direct band gap of 3.51 and 3.37 eV for as deposited TiO₂ films and when annealed at 400 °C, respectively. There is a shift of about 0.1 eV between ITO and ITO/TiO₂ films deposited at 200 °C. The shift decreases by half when the TiO₂ film was deposited at 400 °C. Post-annealing was also performed on double layer ITO/TiO₂.     

Co离子注入TiO2薄膜的显微结构和磁性研究

利用直流磁控溅射技术在玻璃衬底上沉积了TiO₂薄膜,并对其进行了Co离子注入,最后在真空中500 ℃退火50 min,得到系列薄膜样品. 利用剥离-分散方法制备了薄膜的透射电镜样品,并用扫描电镜(SEM)、X射线能量散射谱(EDX)和高分辨透射电镜(HRTEM)对样品做了近似原位观察,研究了薄膜样品中不同Co离子注入深度的成分分布和显微结构. 结果表明,薄膜呈锐钛矿结构,Co元素主要分布在薄膜表层,Co离子的注入使TiO₂薄膜的晶粒被部分破坏,并形成CoO,而5 关键词： 2薄膜')" href="#">Co注入TiO₂薄膜 电镜原位观察 室温铁磁性     

Influence of terbium on structure and luminescence of nanocrystalline TiO2 thin films

In this work analysis of the structural and optical properties of TiO₂ thin films doped with terbium has been described. Samples were prepared by a high energy reactive magnetron sputtering process under low pressure of oxygen plasma. X-ray diffraction results have shown that different TiO₂ crystal forms have been produced, depending on the amount of Tb dopant. The undoped matrix had rutile structure with crystallites with a size of 8.7 nm, while incorporation of 0.4 at. % of Tb into the film during the sputtering process resulted in anatase structure with bigger crystallites (11.7 nm). Increasing the amount of terbium up to 2 at. % and 2.6 at. % gave rutile structure with crystallites with a size of 6.6 nm for both films. However, Raman spectroscopy has revealed that in the case of TiO₂:(2 at. % Tb), except for the rutile form, the presence of fine-crystalline anatase was observed. Moreover, the lack of Raman peaks shift attests to the lack of stress in the titania lattice of all of the TiO₂:Tb films. This fact indicates localization of Tb3+ ions on the surface of TiO₂ nanocrystals. In the case of optical investigation, results have shown that doping with terbium has a significant influence on the properties of TiO₂, but it does not decrease the high transparency of the matrix. The observed changes of the transmission characteristics were produced only due to modification of the TiO₂:Tb structure. Photoluminescence measurements have shown that emission of light from TiO₂:Tb films occurs when the amount of terbium is 2.6 at. %. Based on the obtained results a scheme of direct energy transfer from titanium dioxide matrix (with rutile structure) to Tb³⁺ ions has been proposed.     

Structural properties of transparent Ti-V oxide semiconductor thin films

Transparent oxide semiconducting thin films based on mixed Ti-V oxides were prepared using a modified reactive magnetron sputtering method. Based on structural investigations performed with the help of x-ray diffraction and transmission electron microscopy analysis, two distinct regions in the prepared thin film have been observed: a nanocrystalline TiO₂-V₂O₃-V₂O₅ mixed composition, and a thin layer consisting of amorphous phase and nanocystalline TiO₂ phase deposited directly at the substrate. Optical measurements show excellent transmission in the visible spectral range of 73%, on average. Resistivity of the thin film was found at the order of 10⁵ Ω cm at room temperature. The preparation of mixed Ti-V oxides provides a combination of high transparency and semiconducting properties.     

Correlation between processing and properties of TiOxNy thin films sputter deposited by the reactive gas pulsing technique

Titanium oxynitride thin films were deposited by d.c. reactive magnetron sputtering from titanium metallic target and from oxygen and nitrogen as reactive gases. The nitrogen mass flow rate was maintained constant whereas that of the oxygen was pulsed during the deposition. A constant pulsing period was used and the introduction time of the oxygen was systematically changed from 0 to 100% of the period time. The reactive gas pulsing technique allowed to prepare TiO_xN_y films with various metalloid concentrations (0≤x≤2.0 and 0≤y≤1.0) and led to changes of the crystallographic structure from f.c.c. TiN to tetragonal TiO₂. The variations of the metalloid content in the films result in changes in the electrical and optical properties and the reverse evolution of the oxygen and nitrogen content correlates with the transition from metallic to semiconducting behavior. The sputtering conditions were investigated taking into account the poisoning phenomena of the surface of the target from real time measurements of the target potential and from the reactive atmosphere, followed by mass spectrometry. Such diagnostics allowed to understand and to control better the advantageous role of the reactive gas pulsing technique and conducted to close relationships between the process parameters and the film properties.     

Effects of nitrogen doping on optical properties of TiO2 thin films

The potential for extending the optical absorption range of TiO₂ by doping with nonmetallic elements was examined in nitrogen-containing TiO₂ thin films. Thin films of TiO_2-xN_x were synthesized on glass and silicon substrates by ion-beam-assisted deposition to obtain a wide range of nitrogen concentrations. The compositions of the films were determined by Rutherford backscattering spectrometry and X-ray photoelectron spectroscopy. The structures of the films were analyzed by X-ray diffraction, transmission electron microscopy, and atomic force microscopy. The optical properties of the films were measured by UV-Vis spectroscopy and ellipsometry. A characteristic decreasing trend in band-gap values of the films was observed within a certain range of increasing dopant concentrations. As the nitrogen concentration increased, the structure of the films evolved from a well-defined anatase to deformed anatase. The reduced band gaps are associated with the N 2p orbital in the TiO_2-xN_x films. PACS 78.66.-w; 78.20.Ci     

Quantum confinement effects of CdTe nanocrystals sequestered in TiO2 matrix: effect of oxygen incorporation

Thin films of TiO₂ with high volume fraction (40–55%) and crystallite size (6–40 nm) of CdTe nanoparticles had been prepared by rf magnetron sputtering from a composite TiO₂:CdTe target at room temperature and 373 K. A detailed optical properties of nanocrystalline CdTe:TiO₂ films as-deposited and after thermal treatment (300 °C) are studied. The absorbance of the TiO₂ films with CdTe nanocrystallite dispersions depends both on the nanocrystallite size and volume fraction. The blue-shifts of the optical absorption edge concurrent with the CdTe nanocystal size reduction for as-deposited and after thermal treatment of nanocrystalline CdTe:TiO₂ thin films with respect to the bulk semiconductor agrees quite well with the strong quantum confinement theory. A slight deviation in absorption edge values than the predicted values from the strong quantum confinement model can be attributed to change in interplanar distance due to oxygen incorporation and inhomogeneous size distribution of CdTe nanocrystallites in these films.     

AlNxOy thin films deposited by DC reactive magnetron sputtering

AlN_xO_y thin films were produced by DC reactive magnetron sputtering, using an atmosphere of argon and a reactive gas mixture of nitrogen and oxygen, for a wide range of partial pressures of reactive gas. During the deposition, the discharge current was kept constant and the discharge parameters were monitored. The deposition rate, chemical composition, morphology, structure and electrical resistivity of the coatings are strongly correlated with discharge parameters. Varying the reactive gas mixture partial pressure, the film properties change gradually from metallic-like films, for low reactive gas partial pressures, to stoichiometric amorphous Al₂O₃ insulator films, at high pressures. For intermediate reactive gas pressures, sub-stoichiometric AlN_xO_y films were obtained, with the electrical resistivity of the films increasing with the non-metallic/metallic ratio.     

Titanium Dioxide/Germanium Core–Shell Nanorod Arrays Grown on Carbon Textiles as Flexible Electrodes for High Density Lithium‐Ion Batteries

Three‐dimensional (3D) titanium dioxide@germanium (TiO₂@Ge) core–shell nanorod arrays on carbon textiles are fabricated by a facile two‐step method and further investigated as flexible electrode for Li‐ion batteries (LIBs). The synthesis of TiO₂@Ge composite involves the hydrothermal growth of TiO₂ nanorod arrays on carbon textiles and a subsequent coat with a thin layer of germanium with radio frequency (RF) magnetron sputtering. The TiO₂ nanorod arrays can effectively not only increase the unit mass loading as a role of skeleton but also remarkably enhance the electrical conductivity via control the lithiation/delithiation voltage in the range of 0.01–1.0 V, where TiO₂ can be in situ lithiated to Li_xTiO₂ after the first discharge cycle. Moreover, each TiO₂@Ge nanorod has enough space to accommodate the large volume expansion of Ge during charge and discharge cycles. Benefiting from unique electrode architectures, this additive free, self‐supported electrode exhibits the high reversible capacity, outstanding rate capability, and the extremely long cycling stability even at a high rate (700.3 mAh g^?1 is still retained at 5 A g^?1 after 600 cycles).     

Photocatalytic properties of nanocrystalline TiO<Subscript>2</Subscript> thin films doped with Tb

In this work photocatalytic properties of TiO₂ thin films doped with different amount of Tb have been described. Thin films were prepared by high energy reactive magnetron sputtering process. Comparable photocatalytic activity has been found for all doped TiO₂ thin films, while different amounts of Tb dopant (0.4 and 2.6 at. %) results in either an anatase or rutile structure. It was found that the terbium dopant incorporated into TiO₂ was also responsible for the amount of hydroxyl groups and water particles adsorbed on the thin film surfaces and thus photocatalytic activity was few times higher in comparison with results collected for undoped TiO₂ thin films.     

Deposition of graded TiO2 films featured both hydrophobic and photo-induced hydrophilic properties

Graded TiO₂ films were deposited on unheated glass substrates by using a twin dc magnetron sputtering system. The graded TiO₂ films showed a highly polycrystalline structure of anatase with a little rutile phases revealed by X-ray diffraction spectra. The surface energy of the fresh and UV irradiated films were evaluated by water contact angle measurement. The results indicated that the water contact angle of the fresh graded TiO₂ films was found within 100-112°. The films then became a highly hydrophilic surface with the water contact angle of almost zero under 60 min UV irradiation. The XPS spectrum of Ti 2p revealed that the graded TiO₂ films became a stoichiometric titanium oxide layer near the surface, proving that titanium was fully oxidized. It was found that the surface OH group density depended on the substrates employed for given sputtering conditions. In addition, AFM images revealed a considerably rough surface of the graded films with RMS roughness of 12.6-14.5 nm. One can conclude that the unique properties of highly hydrophobicity and photo-induced hydrophilicity can be attributed to fully oxidized chemical composition and higher roughness on the film surface.