单斜结构的Yb:KLu(WO4)2晶体光谱和激光性质的各向异性

研究了Yb:KLu(WO₄)₂晶体对非偏振抽运光的吸收以及连续波激光振荡性质. 晶体结构的低对称性导致晶体光谱呈强烈各向异性,最强的吸收和发射都发生在平行于N_m主轴的偏振方向上. N_g切向晶体具有最高的非偏振抽运光吸收效率和最大的激光功率产生潜力,2 mm长的晶体产生的最高连续波输出功率为11 W,相对于吸收抽运功率,光—光转换效率为68%,而斜率效率则达80%. 关键词： 吸收谱 发射谱 激光振荡 各向异性     

基质敏化的Er0.1Gd0.9VO4晶体的红外量子剪裁

研究了Er_0.1Gd_0.9VO₄晶体材料的红外量子剪裁现象, 发现了较为有趣的基质敏化的红外量子剪裁现象. 即对于1537.5 nm的⁴I_13/2→⁴I_15/2红外荧光的激发谱存在一个宽而强的337.0 nm波长的激发谱峰,仔细分析可以认定337.0 nm的激发峰对应着基质GdVO₄材料的吸收. 同时,发光谱的测量显示337.0 nm光激发Er_0.1Gd_0.9VO₄材料的基质吸收带时导致的1537.5 nm⁴I_13/2→⁴I_15/2红外荧光的积分强度比其他所有荧光的积分强度的总和大了接近10倍, 它的红外量子剪裁效率仅次于最强的²H_11/2能级受激的红外量子剪裁效率且比其他能级都强. 关键词： 红外的量子剪裁 太阳能电池 0.1Gd_0.9VO₄晶体材料')" href="#">Er_0.1Gd_0.9VO₄晶体材料     

Yb:Y2－2xLa2xO3激光透明陶瓷的光谱性能

对一种低温易烧结的Yb:Y_2-2xLa_2xO₃激光透明陶瓷的光谱性能进行了初步研究，Yb:Y_2-2xLa_2xO₃激光透明陶瓷具有宽的吸收带和大的吸收截面，在最强的吸收峰977nm处吸收截面达4.0×10^-20cm²；其荧光发射寿命为1.1ms，发射截面在1033nm处为1.0×10^-20cm²，在1077nm处为0.7×10^-20cm².Yb:Y_2-2xLa_2xO₃陶瓷的各项光学性能指标接近或达到单晶的指标. 关键词： 氧化镧钇 激光陶瓷 低温烧结 光谱性能     

Er0.3Gd0.7VO4晶体红外量子剪裁效应及其在太阳能电池应用上的研究

研究了高浓度的Er_0.3Gd_0.7VO₄晶体材料的红外量子剪裁现象,结果发现光激发²H_11/2能级和⁴G_11/2能级的⁴I_13/2→⁴I_15/2荧光跃迁的近似的量子剪裁效率η’已达约178.55%和177.61% 关键词： 红外的量子剪裁 太阳能电池 0.3Gd_0.7VO₄晶体材料')" href="#">Er_0.3Gd_0.7VO₄晶体材料     

La2O3对Yb:Y2O3透明陶瓷光谱性能的影响

研究了La₂O₃对Yb：Y₂O₃透明陶瓷光谱性能的影响，添加适量La₂O₃以后，Yb：Y₂O₃透明陶瓷的吸收峰和发射峰的位置不变，但由于La³⁺的离子半径大于Y³⁺的离子半径，在Y₂O₃中引入La³⁺离子后，导致Y₂O₃晶格常数变大，晶场强度变弱，同时降低了Y₂O₃晶体的有序度，致使发射峰强度有所下降，发射截面变小.过量的La₂O₃（x=0.16）造成Yb³⁺激活离子发射强度明显下降；其荧光寿命在添加La₂O₃后总体增大45%—60%. 关键词： 氧化镧 氧化钇 透明陶瓷 光谱性能     

Yb掺杂C60薄膜的x射线光电子能谱研究

在超高真空系统中制备了C₆₀的Yb填隙化合物薄膜.用x射线光电子能谱研究了Yb和C₆₀结合过程中C 1s，Yb 4f和Yb 4d的变化.利用Yb 4f和C 1s的谱峰强度确定出相纯样品的化学组分接近Yb_2.75C₆₀，这一结果与晶体x射线衍射结果一致.Yb 4f和Yb 4d的峰形与峰位表明化合物中Yb的价态为Yb²⁺.相纯样品（Yb_2.75C₆₀）的C 关键词： 60的Yb填隙化合物薄膜')" href="#">C₆₀的Yb填隙化合物薄膜 x射线光电子能谱 Yb价态     

Yb2.75C60价带光电子能谱

用角积分紫外光电子能谱技术测量了Yb_2.75C₆₀薄膜的价带电子态密度分布.相纯Yb_2.75C₆₀样品通过C1s芯态x射线电子谱峰的位移表征.结果表明Yb_2.75C₆₀是半导体，在费米能级处几乎没有电子态分布.Yb 6s电子态和C₆₀LUMO能带的杂化效应不可忽略，有部分Yb 6s电子分布在Yb-C₆₀杂化能带上. 关键词： 2.75C₆₀')" href="#">Yb_2.75C₆₀ 电子能谱 电子态密度     

Tm:Y2SiO5晶体的生长和光谱性质研究

采用中频感应提拉法生长了高质量的Tm:Y₂SiO₅(Tm:YSO)晶体,测定了晶体的晶格常数和分凝系数.运用劳厄照相法确定了单斜晶系Tm:YSO晶体的三个偏振轴〈010〉,D₁和D₂,在室温下测量了三个偏振轴方向的吸收光谱、荧光光谱和荧光寿命,计算了晶体吸收峰的吸收线宽和吸收截面.研究发现,相对于其他两个偏振轴方向,D₁方向在790nm处出现较强的吸收峰, 关键词： 2SiO₅')" href="#">Tm:Y₂SiO₅ 单斜晶系 吸收光谱 荧光光谱     

Yb:Y2O3透明陶瓷的光学性能研究

介绍了一种基于纳米粉末真空烧结技术的新型固体激光材料——Yb：Y₂O₃多晶陶瓷的制备工艺、物理化学特性、能级结构和光谱特性，并与Yb：YAG单晶进行了对比.采用紧凑型有源镜激光器(CAMIL)的抽运方式，验证了Yb：Y₂O₃透明陶瓷的激光输出性能.在35W的最大抽运功率下，得到波长1078 nm，功率10.5 W 的连续激光输出，斜率效率达到37.5%.实验中还观察到激光输出波长随抽运功率增加而红移以及随输出耦合镜变化而漂移的现象.Yb：Y₂O₃多晶陶瓷是一种理想的激光材料，不仅具有与Yb：YAG单晶同样优秀的物理化学性能和光谱特性，而且其热导率和发射带宽约为Yb：YAG单晶的两倍，非常适合于高亮度激光器和超短脉冲激光器领域的发展应用. 关键词： 2O₃陶瓷')" href="#">Yb:Y₂O₃陶瓷 陶瓷激光器 透明陶瓷     

Er/Yb共掺体系的光致荧光行为及相关物理过程研究

采用固相反应方法，制备了Er₂O₃浓度固定为0.5mol%，Yb₂O₃浓度范围为0.0mol%—5.5mol%的Er/Yb共掺激光玻璃.通过吸收光谱、光致荧光光谱和上转换荧光光谱，研究了Yb₂O₃浓度对Er³⁺荧光特性的影响，并探讨了相关的物理机制.研究结果表明：Yb³⁺共掺对Er³⁺的⁴ 关键词： Er/Yb共掺 光致荧光 能量传递 合作上转换     

Systematic study on thermal lens effect and passive Q-switching of diode-pumped 1.34-μm Nd:GdxY1 ? xVO4 laser with different output couplers

The thermal lens effect and passively Q-switched laser performance of mixed Nd:Gd _x Y_{1 − x} VO₄ crystals at 1.34 μm with 5 and 10% as the output transmissions have been systematically studied. Compared with the single vanadate crystal Nd:GdVO₄, the mixed Nd:Gd _x Y_{1 − x} VO₄ crystals can enhance passively Q-switched laser characteristics due to their smaller emission cross sections, although they have stronger thermal lens effects which result in decreasing the average output power. The largest peak power and pulse energy, obtained for Nd:Gd_0.63Y_0.37VO₄, were 2.9 and 1.7 times as those of Nd:GdVO₄ under the uniform conditions.     

Performance comparisons of passively Q-switched intracavity-frequency-doubled Nd:Gd<Subscript>0.19</Subscript>Y<Subscript>0.81</Subscript>VO<Subscript>4</Subscript> and Nd:Gd<Subscript>0.83</Subscript>Y<Subscript>0.17</Subscript>VO<Subscript>4</Subscript> lasers at 671 nm

Performance comparisons of laser-diode pumped passively Q-switched intracavity-frequency-doubled Nd:Gd_0.19Y_0.81VO₄ and Nd:Gd_0.83Y_0.17VO₄ lasers at 671 nm are demonstrated for the first time to our knowledge. KTP crystal is used as the frequency doubling material and V:YAG crystal as the saturable absorber with initial transmission of 89%. The dependences of average output power, pulse width, pulse repetition rate, single-pulse energy and peak power on incident pump power are measured and contrasted. The experimental results show that, Nd:Gd_0.83Y_0.17VO₄ laser has more excellent properties than Nd:Gd_0.19Y_0.81VO₄ laser at 671 nm.     

Diode-pumped actively Nd:Lu0.33Y0.37Gd0.3VO4 Q-switched laser with electro-optic (EO) modulator

Nd:Lu_0.33Y_0.37Gd_0.3VO₄ crystal is a new triple-mixed vanadate crystal and has broader fluorescence line-width. By using electro-optic (EO) modulator as active Q-switch, a diode-pumped actively Q-switched Nd:Lu_0.33Y_0.37Gd_0.3VO₄ laser is realized for the first time. The average output power and the pulse width under different EO repetition rates are measured. The experimental results show that the actively Q-switched Nd:Lu_0.33Y_0.37Gd_0.3VO₄ laser can generate shorter pulse width with higher peak power. Due to broader fluorescence line-width, the triple-mixed crystal Nd:Lu_0.33Y_0.37Gd_0.3VO₄ is a promising laser medium for the Q-switched laser.     

Actively Q-switched laser performance comparison between Nd:Lu0.15Y0.85VO4 and Nd:Lu0.33Y0.37Gd0.3VO4 mixed crystals

By using acousto-optic (AO) modulator as active Q-switch, the diode-pumped actively Q-switched Nd:Lu_0.15Y_0.85VO₄ and Nd:Lu_0.33Y_0.37Gd_0.3VO₄ lasers are realized. The average output power and the pulse width under different AO repetition rates are measured. The actively Q-switched laser performances for two kind mixed crystals are compared for the first time. The experimental results show that the actively Q-switched Nd:Lu_0.33Y_0.37Gd_0.3VO₄ laser can generate shorter pulse width with higher peak power in comparison with the actively Q-switched Nd:Lu_0.15Y_0.85VO₄ laser. Due to broader fluorescence line-width, the triple-mixed crystal Nd:Lu_0.33Y_0.37Gd_0.3VO₄ is a promising laser medium for shorter Q-switched pulse with higher peak power.     

Advances in vanadate laser crystals at a lasing wavelength of 1 micrometer

Sapphire, garnet and vanadate crystals are the most prominent optical materials, and vanadates play important roles in optics, especially in lasers and nonlinear optics. Neodymium‐doped yttrium vanadate (Nd:YVO₄) is representative and available commercially. Based on Nd:YVO₄, several vanadate crystals are being developed with the goal of fulfilling the need for differential applications and improvement of certain operational aspects, such as with pulsed lasers or high‐power continuous‐wave lasers. In recent years, some important effects, including energy enhancement, bistability of output performance, self‐Raman frequency shifting, etc., and some novel applications, such as quantum optics, pulsed lasers modulated by the two‐dimensional crystals, etc., have been discovered with vanadates as gain materials. In this paper, the preparation, characterization and laser applications of vanadate laser crystals at the lasing wavelength of 1 micrometer, including YVO₄, GdVO₄, LuVO₄, Gd_xY_1–xVO₄ and Lu_xGd_1–xVO₄ (0 < x < 1) doped with Nd³⁺ and ytterbium (Yb³⁺) are systematically reviewed by highlighting the most recent research progress. Their specific properties are presented, generation mechanisms of novel physical effects are discussed, new applications are given and possible future applications proposed by focusing on some potential strengths.     

Passively Q-switched laser performance of the mixed crystals Nd:Lu0.15 Y0.85 VO4, Nd:Lu0.5 Y0.5 VO4 and Nd:Lu0.33Y0.37Gd0.3VO4 with GaAs saturable absorber

By using the mixed crystals Nd:Lu_0.15 Y_0.85 VO₄, Nd:Lu_0.5Y_0.5VO₄ and Nd:Lu_0.33Y_0.37Gd_0.3VO₄ as laser media, the LD pumped passively Q-switched mixed lasers with GaAs saturable absorber are realized. The average output power, the pulse width etc. have been measured and compared. The experimental results show that the passively Q-switched Nd:Lu_0.33Y_0.37Gd_0.3VO₄ laser can generate shorter pulse width with higher peak power due to broader fluorescence line-width. Under Gaussian spatial distribution approximation, the rate equations for LD pumped passively Q-switched lasers of the mixed crystals with GaAs saturable absorber are given. The numerical solutions of the equations are in agreement with the experimental results.     

Passively Q-switched and mode-locked laser performance of the mixed crystals with GaAs saturable absorber

By using the mixed crystals Nd:Lu_0.33Y_0.37Gd_0.3VO₄, Nd:Lu_0.5Y_0.5VO₄ and Nd:Lu_0.15Y_0.85VO₄ as laser media, the LD pumped passively Q-switched and mode-locked (QML) lasers with GaAs saturable absorber are realized. The average output power, the pulse width and the repetition rates have been measured and compared. The experimental results show that the passively Q-switched and mode-locked Nd:Lu_0.33Y_0.37Gd_0.3VO₄ laser can generate shorter pulse width with higher peak power due to broader fluorescence line-width. By considering the Gaussian distribution of the intracavity photon density and the influence of the continuous pump rate, the coupled rate equations for QML lasers with GaAs saturable absorber are given. The theoretical solutions of the equations are in agreement with the experimental results.     

Quasi-three-level laser operation of Nd:Y<Subscript>0.53</Subscript>Gd<Subscript>0.47</Subscript>VO<Subscript>4</Subscript> mixed vanadate crystal oscillating at 913 nm

Efficient continuous-wave (CW) laser operation on the ⁴ F _3/2 → ⁴ I _9/2 transition of Nd:Y_0.53Gd_0.47VO₄, a mixed vanadate crystal, is demonstrated at room temperature employing a compact plano-concave resonator, generating a polarized output power of 0.39 W at 913.2 nm with 2.85 W of pump power absorbed, the optical-to-optical and slope efficiencies being 14 and 25%, respectively.     

All-solid-state Nd:Gd<Subscript>0.18</Subscript>Y<Subscript>0.82</Subscript>VO<Subscript>4</Subscript>-LBO green laser at 532 nm

We report a continuous-wave (CW) coherent green radiation at 532 nm by intracavity frequency doubling generation of 1064 nm Nd:Gd_0.18Y_0.82VO₄ laser. With incident pump power of 18.2 W, output power of 1.08 W at 532 nm has been obtained using a 5 mm-long KTP crystal. The optical conversion efficiency was up to 5.9%. At the output power level of 1.08 W, the output stability is better than 5%. The beam quality M² values were equal to 1.26 and 1.12 in X and Y directions, respectively.     

Efficient Nd:Y0.5Gd0.5VO4-KTiOPO4 green laser under diode pumping into the emitting level 4F3/2

We report a green laser at 532 nm generation by intracavity frequency doubling of a continuous wave (cw) laser operation of a 1064 nm Nd:Y_0.5Gd_0.5VO₄ laser under diode pumping into the emitting level ⁴ F _3/2. A KTiOPO₄ (KTP) crystal, cut for critical type-II phase matching at room temperature is used for second harmonic generation (SHG) of the laser. At an incident pump power of 17.8 W, as high as 4.21 W of cw output power at 532 nm is achieved. The optical-to-optical conversion efficiency is up to 23.6%, and the fluctuation of the green output power was better than 2.8% in the given 30 min.