半导体材料AAl2C4(A=Zn, Cd, Hg; C=S, Se)的电子结构和光学性质

采用基于密度泛函理论的第一性原理方法, 对具有缺陷型黄铜矿结构的半导体材料A^ⅡAl₂C₄^Ⅵ(A=Zn, Cd, Hg; C =S, Se)的构型和电子结构进行研究, 并系统考察了各晶体的光学性质. 对于线性光学性质, 五种晶体在红外区和部分可见光区具有良好的透光性能, 其中HgAl₂S₄和HgAl₂Se₄晶体具有适中的双折射率. 在非线性光学性质方面, 该类晶体倍频效应较强, 理论预测得到的二阶静态倍频系数均较大(>20 pm/V). 体系的倍频效应主要来源于价带顶附近以S/Se 价p轨道为主要成分的能带向含有较多Al/Hg 价p成分的空带之间的跃迁. 通过与已商业化的AgGaC₂晶体光学性质的对比, 结果表明HgAl₂S₄和HgAl₂Se₄是一类性能优良的红外非线性光学晶体材料.     

TiGen-(n=7~12)团簇的光电子能谱及密度泛函理论研究

利用光电子能谱及密度泛函理论计算对TiGe_n^-(n=7~12)团簇的几何结构及电子特性等进行了系统研究. 对于TiGe_n^-负离子及中性TiGe_n,在n=8时出现了钛原子半内嵌的船型结构;在n=9~11时,新增的锗原子加盖到这种船型结构上,逐步形成钛原子完全内嵌的结构. TiGe₁₂^- 团簇具有一种钛原子内嵌的变形六棱柱结构. 自然布居分析结果显示,对于n=8~12的TiGe_n^-/0 团簇,随着内嵌结构的形成,有电子从锗原子转移到钛原子,说明其电荷转移方式与结构演变密切相关.     

A density functional theory study on size-dependent structures, stabilities, and electronic properties of the bimetallic MnAgm (M=Na, Li; n+m ≤ 7) clusters

The equilibrium geometries, relative stabilities, and electronic properties of M_nAg_m (M=Na, Li; n+m≤ 7) as well as pure Ag_n, Na_n, Li_n (n≤ 7) clusters are systematically investigated by means of density functional theory. The optimized geometries reveal that for 2≤ n ≤ 7, there are significant similarities in geometry among pure Ag_n, Na_n, and Li_n clusters, and the transitions from planar to three-dimensional configurations occur at n=7, 7, and 6, respectively. In contrast, the first three-dimensional (3D) structures are observed at n+m=5 for both Na_nAg_m and Li_nAg_m cluters. When n+m ≥ 5, a striking feature is that the trigonal bipyramid becomes the main subunit of Li_nAg_m. Furthermore, dramatic odd-even alternative behaviours are obtained in the fragmentation energies, second-order difference energies, highest occupied and lowest unoccupied molecular orbital energy gaps, and chemical hardness for both pure and doped clusters. The analytic results exhibit that clusters with even electronic configuration (2, 4, 6) possess weakest chemical reactivity and more enhanced stability.     

NaBn(n=1—9)团簇的几何结构和电子性质

应用密度泛函理论(DFT)中B3LYP方法在6-311+G(d)水平上计算并分析了 NaB_n(n=1—9)团簇的几何结构及电子性质. 同时, 讨论了团簇的平均结合能、能级间隙、二阶能量差分和极化率.研究表明:NaB_n(n=1—9) 团簇基态绝大多数为平面构型. 能级间隙和二阶能量差分结果表明NaB₃与NaB₅是幻数团簇. 另外, 对平均线性极化率和极化率的各向异性不变量研究表明基态NaB_n团簇的电子结构随B原子的增加虽然趋于紧凑, 但尚未形成特定的堆积方式.     

态|Ψn(2)>q的广义非线性等阶N次方H压缩效应

构造了一种新型的多模叠加态|Ψ_n⁽²⁾>_q=C_n^(R)|{-iZ_j^*}>_q+C_n⁽⁰⁾|{O_j}>_q;并首次详细地研究了此量子态的等阶N次方H压缩特性.大量的计算和分析表明:态|Ψ_n⁽²⁾>_q是一种多模典型的非经典光场;还发现了"相似压缩"等现象.     

Wn(n=3—27)原子团簇结构的第一性原理计算

使用密度泛函理论下的第一性原理方法，对W_n原子团簇(n=3—27)的结构特性进行了理论计算. 得到了W_n团簇(n=3—7)的最低能量结构和(n=8—27)的局域能量极小的典型结构. 使用凝胶模型，提出的电子组态1s²1p⁶1d¹⁰2s²1f¹⁴2p⁶3s     

ConCm±(n=1-5; m=1,2)团簇的密度泛函理论研究

本文采用基于自旋极化的密度泛函理论系统研究了Co_nC_m^± (n=1-5; m=1,2)团簇的几何结构和电子结构特性. 将Co_nC^± (n=2-5)团簇中的一个Co替换为C原子, 个体的基态几何结构发生明显变化; 在Co_nC₂^± (n=1-5)团簇的生长序列中, 发现从n=3开始团簇中的两个C原子有彼此分离分布的趋势, 我们分析, 这是Co金属能够维持单壁碳纳米管(SCNTs)保持开口生长, 成为非常有效的一种催化剂的重要原因. 同时, 将Co_nC^± (n=2-5)团簇中添加一个Co原子后系统的总磁矩出现大幅下降的趋势, 但仍保持奇偶交替的规律. 通过比较中性及带电的Co_nC以及Co_nC₂ (n=1-5)团簇的碎裂能, 本工作发现: 由实验获取的SCNTs应均为带正电的体系, 这一结论与已有的实验模型拟合得很好.     

碱金属Li,Na,K,Rb,Cs,Fr的ns2S1/2,np2P1/2,3/2, nd2D3/2,5/2 和nf2F5/2,7/2 里德伯能级理论研究

本文在多通道量子数亏损理论(MQDT)框架下,利用相对论多通道理论(RMCT),分别在冻结实近似、 考虑Δl=-1的偶极极化效应、Δl=+1的偶极极化效应、Δl=± 1的偶极极化效应、伸缩模效应以及同时考虑偶极极化效应和伸缩模效应等不同层次近似下,系统地计算了碱金属Li, Na, K, Rb, Cs和Fr七个里德伯系列的能级,即ns²S_1/2, np²P_1/2, np²P_3/2, nd²D_3/2, nd²D_5/2, nf²F_5/2 和nf²F_7/2.计算结果表明,电子关联效应对碱金属原子的里德伯能级的影响很大.总的来说,偶极极化效应比伸缩模效应重要,而在偶极极化效应中, Δl = + 1的偶极极化效应比Δl = - 1的偶极极化效应重要.但对于Na的ns²S_1/2,(nd²D_3/2,nd²D_5/2)里德伯系列的能级,和Li的(np²P_1/2,np²P_3/2)里德伯系列的能级,是伸缩模效应比较重要.     

Cr2MC(M=Al, Ga)的电子结构、弹性和热力学性质的第一性原理研究

本文使用第一性原理的GGA/RPBE方法研究了Cr₂MC(M=Al, Ga)的电子结构、弹性和热力学性质. 研究发现两个化合物的体积压缩性几乎相同, 并且证实了在0—50 GPa范围内c轴始终较a轴更难以压缩并且结构始终是稳定的. 通过对内坐标的研究发现了Cr₂AlC中Cr离子的内坐标始终大于Cr₂GaC中Cr离子的内坐标. 使用准谐德拜模型得到的体弹模量在0 GPa下随着温度的升高而减小, 而在300 GPa下则随着温度的升高而增大. 对德拜温度的研究发现Cr₂GaC的值小于Cr₂AlC的值, 而对热膨胀系数、Grüneisen参数、熵和热容的计算发现Cr₂GaC的值大于Cr₂AlC的值. 对电子结构的分析发现Cr₂GaC的s和p电子在费米能级处的值大于Cr₂AlC的s和p电子的值, 而其他离子的电子分布几乎一致.     

三明治结构Tan(B3N3H6)n+1 团簇的磁性和量子输运性质

利用密度泛函理论和非平衡格林函数方法, 本文对小尺寸团簇Ta_n(B₃N₃H₆)_n+1 (n ≤ 4)的磁性和量子输运性质进行了系统的研究. 计算结果表明, 此类体系采用三明治结构作为其基态并且具有较高的稳定性. 体系的磁矩随团簇尺寸的增大而线性增大. 当把Ta_n(B₃N₃H₆)_n+1团簇耦合到Au电极上时, 形成的Au-Ta_n(B₃N₃H₆)_n+1-Au体系在有限偏压下展示出了较强的自旋过滤能力, 因而可以被看做是一类新型的低维自旋过滤器.     

Ab-initio study of Li based chalcopyrite compounds LiGaX2 (X= S,Se, Te) in tetragonal symmetry: A class of future materials for optoelectronic applications

Structural, electronic, optical, and thermoelectric aspects of chalcopyrite LiGaX₂ (X = S, Se and Te) compounds have been investigated by density functional theory (DFT) based Wien2k simulator. The optimized ground state parameters are calculated by Wu-Cohen generalized gradient approximation (WC-GGA) and electronic structures, which have been further improved by modified Becke-Johnson (mBJ) potential. Moreover, a comparative study is given among the contribution of three anions (S, Se and Te) in the same symmetry of tetragonal phase. The calculated band gaps of the studied compounds are 3.39, 2.83, and 1.96 eV for LiGaS_2, LiGaSe₂ and LiGaTe₂, respectively. The observed band gaps consider the studied compounds are potential materials for optoelectronic devices. In addition, the optical response of the studied materials has been analyzed in terms of dielectric constants, refraction, absorption, reflectivity and energy loss function. We have also reported the thermoelectric properties like Seebeck coefficient, thermal and electrical conductivities, and figure of merit as function of temperatures by using BoltzTrap code. The high thermal efficiency and absorption spectra in the visible region make the studied materials multifunctional for energy applications.     

A photoluminescence study on lithium ternary compounds

Summary The photoluminescence spectra of LiInS₂ and LiInSe₂ single crystals are investigated in this work. The origin of the coloration and deep emission at 460 nm on LiInS₂ is estimated through ESR measurements to be due to Fe³⁺ ions. The so-called ?near-band-edge emission? was observed at 600 nm and at 77 K on the light yellow LiInSe₂ single crystals. Through a comparison between the results of electrical and photoluminescence measurements it is shown that the red LiInSe₂ has a tailing band structure with high-density residual impurities. Some deep emissions are obtained on yellow and red LiInSe₂. Paper presented at the ?V Intenrational Conference on Ternary and Multinary Compounds?, held in Cagliari, September 14–16, 1982.     

First principles study of electronic structure and optical properties of LiMTe2 (M=Al, Ga, In) crystals

The results of first principles calculations of the electronic band structure, density of states and frequency dependent dielectric functions of LiAlTe₂, LiGaTe₂ and LiInTe₂ chalcopyrite crystals are reported. The calculations have been carried out within the density functional theory using norm-conserving pseudopotentials and a plane-wave basis. The peculiarities of the imaginary part ε₂(ω) of the complex permittivity are discussed and interpreted on the basis of the obtained band spectra. Our calculations show that the Ga-containing compound is characterized by the largest optical anisotropy compared to Al- and In-containing compounds and, therefore, is the most promising candidate for nonlinear optical applications among considered crystals.     

Parametric Frequency Converters Based on New Nonlinear Crystals

Results of investigations into the physical properties of a number of new nonlinear crystals are presented. The parameters of frequency converters manufactured on their basis are compared, and second-harmonic generation of CO₂ lasers first excited by frequency conversion in LiInSe₂, AgGa_{1– x} In_xSe₂, Ag_xGa_xGe_xS_{2(1 + x)}, and Hg_1–x Cd_xGa₂S₄ crystals is investigated. The superiority of HgGa₂S₄, Hg_1–x Cd_xGa₂S₄, and AgGa_1–x In_xSe₂ over the well-known crystals has been demonstrated for frequency conversion both within the middle-IR range and from the visible range to the middle-IR range. Advantages of LiInSe₂ and AgGa_1–x In_xSe₂ crystals are demonstrated for the direct frequency conversion of femtosecond laser radiation to the middle-IR range compared to the cascade frequency conversion and direct frequency conversion in LiInS₂ crystals.     

Electronic properties of orthorhombic LiGaS<Subscript>2</Subscript> and LiGaSe<Subscript>2</Subscript>

We report theoretical calculations of the band structure and density of states for orthorhombic LiGaS₂ (LGS) and LiGaSe₂ (LGSe). These calculations are based on the full potential linear augmented plane wave (FP-LAPW) method within a framework of density functional theory. Our calculations show that these crystals have similar band structures. The valence band maximum (VBM) and the conduction band minimum (CBM) are located at Γ, resulting in a direct energy band gap. The VBM is dominated by S/Se-p and Li-p states, while the CBM is dominated by Ga-s, S/Se-p and small contributions of Li-p and Ga-p. From the partial density of states we find that Li-p hybridizes with Li-s below the Fermi energy (E _F), while Li-s/p hybridizes with Ga-p below and above E _F. Also, we note that S/Se-p hybridizes with Ga-s below and above E _F.     

Design of efficient single-stage chirped pulse difference frequency generation at 7 μm,driven by a dual wavelength Ti:sapphire laser

We present simulations for a design of a high-energy single-stage mid-IR difference frequency generation adapted to a two-color Ti:sapphire amplifier system. The optimized mixing process is based on chirped pulse difference frequency generation (CP-DFG), allowing for a higher conversion efficiency and reduced two-photon absorption losses. The numerical start-to-end simulations include stretching, chirped pulse difference frequency generation and pulse compression. Realistic design parameters for commercially available nonlinear crystals (GaSe, AgGaS₂, LiInSe₂, LiGaSe₂) are considered. Compared with conventional unchirped DFG directly pumped by Ti:sapphire technology, we predict a threefold increase in the quantum efficiency. Our CP-DFG scheme provides up to 340 μJ pulse energy directly at 7.2 μm when pumped with 8 mJ and supports a bandwidth of up to 350 nm. The resulting 240 fs mid-IR pulses are inherently phase stable.     

缺陷黄铜矿结构Xga2S4 (X=Zn,Cd, Hg)晶体电子结构和光学性质的第一性原理研究

采用基于密度泛函理论(DFT)的第一性原理超软赝势方法对缺陷黄铜矿结构XGa₂S₄ (X=Zn, Cd, Hg)晶体的晶格结构、电学以及光学性质进行了对比研究. 分析比较了它们的晶格常数、键长、能带结构、态密度、介电函数、折射率和反射系数等性质, 并总结其变化趋势. 结果表明: 这三种材料的光学性质在中间能量区域(4 eV–10 eV)表现出较强的各向异性, 而在低能区域(<4 eV)和高能区域(>10 eV)各向异性较弱. ZnGa₂S₄和HgGa₂S₄两种材料的折射率曲线在等离子体频率ω_p处有一明显的拐点, 反射系数在ω_p处达到最大值后急剧下降. 三种晶体的强反射峰均处于紫外区域, 因此可以用作紫外光屏蔽或紫外探测材料. 关键词： 缺陷黄铜矿结构 电子结构 光学性质 第一性原理计算     

Synthesis and characterization of HgBa2Can−1CunO2n+2+δ (n = 1, 2, and 3)

We have successfully prepared the first three members of the mercury-based superconducting compounds Hg--- Ba₂Ca_n−1Cu_nO_2n+2+δ, namely Hg---1201, Hg---1212 and Hg---1223 with high purity and very good quality. T he influence of the synthesis parameters is studied in detail. Using the sealed quartz tube method, very simple procedures are found to ensure a 100% reproducibility of nearly 100% pure Hg---1201 and 85–90% Hg---1212 and Hg---1223. Oxygen annealing of the sample Hg---1201 at 300°C for 18 h results in an enhancement of its critical temperature up to 97 K. The symmetry of the first and second members is tetragonal with lattice parameters

Full-size image (2K)

, respectively. X-ray diffraction lines of Hg---1223 can be indexed in a tetragonal cell with

Full-size image (1K)

as well as in an orthorhombic cell with lattice parameters

Full-size image (1K)

.     

Electronic structure of LiGaS2

X-ray photoelectron spectroscopy (XPS) measurement has been performed to determine the valence band structure of LiGaS₂ crystals. The experimental measurement is compared with the electronic structure obtained from the density functional calculations. It is found that the Ga 3d states in the XPS spectrum are much higher than the calculated results. In order to eliminate this discrepancy, the LDA+U method is employed and reasonable agreement is achieved. Further calculations show that the difference of the linear and nonlinear optical coefficients between LDA and LDA+U calculations is negligibly small, indicating that the Ga 3d states are actually independent of the excited properties of LiGaS₂ crystals since they are located at a very deep position in the valence bands.     

WnNim(n+m=8)团簇的极性和光谱性质的理论研究

采用密度泛函理论(DFT)中的B3LYP方法,在LANL2DZ基组水平上对WnNim(n+m=8)团簇的各种可能构型进行了几何参数全优化,得到了它们的基态构型;并对基态构型的偶极距、极化率、红外光谱和拉曼光谱性质进行了分析,结果表明:团簇WnNim(n+m=8)都具有极性,富W团簇非线性光学效应强,容易被外加场极化;振动频率主要分布在0-350 cm-1范围内,团簇W4Ni4因其振动方式的特殊性,红外光谱和拉曼光谱在频率421.971 cm-1处,都有明显强峰;团簇W5Ni3因其结构的高对称性在振动光谱中出现多处共振现象.