Silicon negative ion implantation induced vacancy defects in thermally grown SiO2 thin films

ABSTRACT

Thermally grown SiO₂ thin films on a silicon substrate implanted with 100?keV silicon negative ions with fluences varying from 1?×?10¹⁵ to 2?×?10¹⁷ ions cm^?2 have been investigated using Electron spin resonance, Fourier transforms infrared and Photoluminescence techniques. ESR studies revealed the presence of non-bridging oxygen hole centers, E′-centers and P_b-centers at g-values 2.0087, 2.0052 and 2.0010, respectively. These vacancy defects were found to increase with respect to ion fluence. FTIR spectra showed rocking vibration mode, stretching mode, bending vibration mode, and asymmetrical stretching absorption bands at 460, 614, 800 and 1080?cm^?1, respectively. The concentrations of Si–O and Si–Si bonds estimated from the absorption spectra were found to vary between 11.95?×?10²¹ cm^?3 and 5.20?×?10²¹ cm^?3 and between 5.90?×?10²¹ cm^?3 and 3.90?×?10²¹ cm^?3, respectively with an increase in the ion fluence. PL studies revealed the presence of vacancies related to non-bridging oxygen hole centers, which caused the light emission at a wavelength of 720?nm.     

Formation of bubbles and blisters in hydrogen ion implanted polycrystalline tungsten

ABSTRACT

Tungsten (W) has been regarded as one of the most promising plasma facing materials (PFMs) in fusion reactors. The formation of bubbles and blisters during hydrogen (H) irradiation will affect the properties of W. The dependence of implantation conditions, such as fluence and energy, is therefore of great interest. In this work, polycrystalline tungsten samples were separated into two groups for study. The thick samples were implanted by 18?keV H₃⁺ ions to fluences of 1?×?10¹⁸, 1?×?10¹⁹ and 1?×?10²⁰ H⁺/cm², respectively. Another thick sample was also implanted by 80?keV H₂⁺ ions to a fluence of 2?×?10¹⁷ H⁺/cm² for comparison. Moreover, the thin samples were implanted by 18?keV H₃⁺ ions to fluences of 9.38?×?10¹⁶, 1.88?×?10¹⁷ and 5.63?×?10¹⁷ H⁺/cm², respectively. Focused ion beam (FIB) combined with scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used for micro-structure analysis, while time-of-flight ion mass spectrometry (ToF-SIMS) was used to characterize the H depth profile. It is indicated that bubbles and blisters could form successively with increasing H⁺ fluence. H bubbles are formed at a fluence of ～5.63?×?10¹⁷ H⁺/cm², and H blisters are formed at ～1?×?10¹⁹ H⁺/cm² for 18?keV H₃⁺ implantation. On the other hand, 80?keV H₂⁺ ions can create more trapping sites in a shallow projected range, and thus enhancing the blisters formation with a relatively lower fluence of 2?×?10^17?H⁺/cm². The crack-like microstructures beneath the blisters are also observed and prefer to form on the deep side of the implanted range.     

Enhancement in electrochemical properties of ionic liquid-based nanocomposite polymer electrolytes by 100 MeV Si9+ swift heavy ion irradiation

Swift heavy ion (SHI) irradiation has been used as a tool to enhance the electrochemical properties of ionic liquid-based nanocomposite polymer electrolytes dispersed with dedoped polyaniline (PAni) nanorods; 100 MeV Si⁹⁺ ions with four different fluences of 5?×?10¹⁰, 1?×?10¹¹, 5?×?10¹¹, and 1?×?10¹² ions cm^?2 have been used as SHI. XRD results depict that with increasing ion fluence, crystallinity decreases due to chain scission up to fluence of 5?×?10¹¹ ions cm^?2, and at higher fluence, crystallinity increases due to cross-linking of polymer chains. Ionic conductivity, electrochemical stability, and dielectric properties are enhanced with increasing ion fluence attaining maximum value at the fluence of 5?×?10¹¹ ions cm^?2 and subsequently decrease. Optimum ionic conductivity of 1.5?×?10^?2 S cm^?1 and electrochemical stability up to 6.3 V have been obtained at the fluence of 5?×?10¹¹ ions cm^?2. Ac conductivity studies show that ion conduction takes place through hopping of ions from one coordination site to the other. On SHI irradiation, amorphicity of the polymer matrix increases resulting in increased segmental motion which facilitates ion hopping leading to an increase in ionic conductivity. Thermogravimetric analysis (TGA) measurements show that SHI-irradiated nanocomposite polymer electrolytes are thermally stable up to 240–260 °C.     

Effects of silicon negative ion implantation in semi-insulating gallium arsenide

ABSTRACT

In the present work, effects of silicon negative ion implantation into semi-insulating gallium arsenide (GaAs) samples with fluences varying between 1?×?10¹⁵ and 4?×?10¹⁷?ions?cm^?2 at 100?keV have been described. Atomic force microscopic images obtained from samples implanted with fluence up to 1?×?10¹⁷?ion?cm^?2 showed the formation of GaAs clusters on the surface of the sample. The shape, size and density of these clusters were found to depend on ion fluence. Whereas sample implanted at higher fluence of 4?×?10¹⁷?ions?cm^?2 showed bump of arbitrary shapes due to cumulative effect of multiple silicon ion impact with GaAs on the same place. GXRD study revealed formation of silicon crystallites in the gallium arsenide sample after implantation. The silicon crystallite size estimated from the full width at half maxima of silicon (111) XRD peak using Debye-Scherrer formula was found to vary between 1.72 and 1.87?nm with respect to ion fluence. Hall measurement revealed the formation of n-type layer in gallium arsenide samples. The current–voltage measurement of the sample implanted with different fluences exhibited the diode like behavior.     

The gas phase oxidation of HCOOH by Cl and NH2 radicals. Proton coupled electron transfer versus hydrogen atom transfer*

ABSTRACT

The reaction of formic acid (HCOOH) with chlorine atom and amidogen radical (NH₂) have been investigated using high level theoretical methods such BH&HLYP, MP2, QCISD, and CCSD(T) with the 6–311?+?G(2df,2p), aug-cc-pVTZ, aug-cc-pVQZ and extrapolation to CBS basis sets. The abstraction of the acidic and formyl hydrogen atoms of the acid by the two radicals has been considered, and the different reactions proceed either by a proton coupled electron transfer (pcet) and hydrogen atom transfer (hat) mechanisms. Our calculated rate constant at 298?K for the reaction with Cl is 1.14?×?10^?13?cm³?molecule^?1?s^?1 in good agreement with the experimental value 1.8?±?0.12/2.0?×?10^?13?cm³?molecule^?1?s^?1 and the reaction proceeds exclusively by abstraction of the formyl hydrogen atom, via hat mechanism, producing HOCO+ClH. The calculated rate constant, at 298?K, for the reaction with NH₂ is 1.71?×?10^?15?cm³?molecule^?1?s^?1, and the reaction goes through the abstraction of the acidic hydrogen atom, via a pcet mechanism, leading to the formation of HCOO+NH₃.     

The GaP(001) surface and the adsorption of Cs

GaP(001) cleaned by argon-ion bombardment and annealed at 500°C showed the Ga-stabilized GaP(001)(4 × 2) structure. Only treatment in 10^?5 Torr PH₃ at 500°C gave the P-stabilized GaP(001)(1 × 2) structure. The AES peak ratio $\text{P}\text{Ga}$ is 2 for the (4 × 2) and 3.5 for the (1 × 2) structure. Cs adsorbs with a sticking probability of unity up to 5 × 10¹⁴ Cs atoms cm^?2 and a lower one at higher coverages. The photoemission measured with uv light of 3660 Å showed a maximum at the coverage of 5 × 10¹⁴ atoms cm^?2. Cs adsorbs amorphously at room temperature, but heat treatment gives ordered structures, which are thought to be reconstructed GaP(001) structures induced by Cs. The LEED patterns showed the GaP(001)(1 × 2) Cs structure formed at 180°C for 10 h with a Cs coverage of 5 × 10¹⁴ atoms cm^?2, the GaP(001)(1 × 4) Cs formed at 210°C for 10 hours with a Cs coverage of 2.7 × 10¹⁴ atoms cm^?2, the GaP(001)(7 × 1) and the high temperature GaP(001)(1 × 4), the latter two with very low Cs content. Desorption measurements show three stability regions: (a) between 25–150°C for coverages greater than 5 × 10¹⁴ atoms cm^?2, and an activation energy of 1.2 eV; (b) between 180–200°C with a coverage of 5 × 10¹⁴ atoms cm^?2, and an activation energy of 1.8 eV; (c) between 210–400°C with a coverage of 2.7 × 10¹⁴ atoms cm^?2, and an activation energy of 2.5 eV.     

Crystalline to amorphous transformations in ion implanted GaP

Abstract

The amorphization process of GaP by ion implantation is studied. The samples of 〈111〉 oriented GaP were implanted at 130 K with various doses 5 × 10¹³-2 × 10¹⁶ cm^?2 of 150 keV N⁺ ions and with the doses of 6 × 10¹²-1.5 × 10¹⁵ cm^?2 of 150 keV Cd⁺ ions. Room temperature implantations were also performed to see the influence of temperature on defect production. Rutherford backscattering and channelling techniques were used to determine damage in crystals. The damage distributions calculated from the RBS spectra have been compared with the results of Monte-Carlo simulation of the defect creation.

The estimated threshold damage density appeared to be independent on ion mass and is equal 6.5 × 10²⁰ keV/cm³. It is suggested that amorphization of GaP is well explained on the basis of a homogenous model.     

Radiation enhanced diffusion in UO2 and (U,Pu)O2

Abstract

The radiation enhanced diffusion (coefficient D*) of U-233 and Pu-238 in UO₂ and (U, Pu)O₂ with 2.5 and 15% Pu was measured during fission in a nuclear reactor. Normal diffusion sandwiches with a thin tracer layer were used. A radio-frequency furnace allowed the temperatures to be varied between 130 and 1400°. Neutron fluxes (7 × 10¹² to 1.2 × 10¹⁴ n cm^?2 s^?1) and irradiation times (56 to 334 h) were also varied to cover ranges of fission rates [Fdot] between 7× 10¹¹ and 6.4 × 10¹³ f cm^?3 s^?1 and of doses F between 4.2 × 10¹⁷ and 3.1 × 10¹⁹ f cm³. Below ～1000°, D* was completely athermal and increased linearly with [Fdot]. It was described by D* = A[Fdot] with A = 1.2× 10^?29cm⁵. A possible temperature dependence was indicated between ～1000and 1200°. The results are explained in terms of thermal and pressure effects of fission spikes and are related with other studies of radiation damage as well as with technologically interesting processes occurring in UO₂ during irradiation.     

ESR of V3+ in zinc oxide single crystals

Electron spin resonance has been investigated in zinc oxide single crystals containing vanadium. Several groups of ordinary and forbidden transitions can be observed. The experimental results are interpreted with the aid of the spin Hamiltonian, for which the following parameters were determined:g∥=1.945; ⊥=1.937; ¦D¦=750×10^?4 cm^?1, ¦A¦=68 × 10^?4 cm^?1; ¦B ¦=93×10^?4 cm^?1; ¦A?P¦=65×10^?4cm^?1.     

Synthesis of Ag metallic nanoparticles by 120 keV Ag− ion implantation in TiO2 matrix

TiO₂ thin film synthesized by the RF sputtering method has been implanted by 120 keV Ag^? ion with different doses (3?×?10¹⁴, 1?×?10¹⁵, 3?×?10¹⁵, 1?×?10¹⁶ and 3?×?10¹⁶ ions/cm²). Further, these were characterized by Rutherford back Scattering, XRD, X-ray photoelectron spectroscopy (XPS), UV–visible and fluorescence spectroscopy. Here we reported that after implantation, localized surface Plasmon resonance has been observed for the fluence 3?×?10¹⁶ ions/cm², which was due to the formation of silver nanoparticles. Ag is in metallic form in the matrix of TiO₂, which is very interestingly as oxidation of Ag was reported after implantation. Also, we have observed the interaction between nanoparticles of Ag and TiO₂, which results in an increasing intensity in lower charge states (Ti³⁺) of Ti. This interaction is supported by XPS and fluorescence spectroscopy, which can help improve photo catalysis and antibacterial properties.     

Spectrophotometric Determination of Trace Amounts of Cobalt and Copper with 3- (2′-Thiazolylazo)- 2,6- Diaminopyridine

Abstract

Sensitive methods for the determination of trace amounts of cobalt and copper by complexation with 3-(2′-Thiazolylazo)-2,6- diaminopyridine (2,6-TADAP) are described. Copper forms a 1:2 violet complex with the reagent having a molar absorptivity of 1.00 × 10⁴ L mol^?1cm^?1, Baer's law is obeyed over the range 0 ?50.84 μg in the total volume of 10ml. Cobalt also forms a 1:1 green complex with a molar absorptivity of 1.07 × 10⁴L mol^?1cm^?1 and obeying Beer's law over the range 0 –23.57 μg in the total volume of 10 ml. The procedure is simple and rapid without any tedious extraction steps for copper and without oxidation of cobalt (II) to cobalt (III).     

Carbonization in boron-ion-implanted polymethylmethacrylate as revealed from Raman spectroscopy and electrical measurements

ABSTRACT

The results of Raman spectroscopy and electrical measurements of 40 keV boron-ion-implanted polymethylmethacrylate with ion doses from 6.25 × 10¹⁴ to 5.0 × 10¹⁶ ions/cm² are reported for the first time. The Raman spectra recorded in the 400–3800 cm^?1 range, showing the formation of new carbon–carbon bands for the as-implanted samples at higher ion doses (>10¹⁶ ions/cm²), are found to be an additional support for carbonization processes earlier revealed by slow positrons. The current–voltage dependences at 360 K testify also that the as-implanted samples examined with higher fluences (3.75 × 10¹⁶ and 5.0 × 10¹⁶ ions/cm²) have created a very thin conductive layer or conductive joints due to carbonization.     

EPR and Optical Absorption Study of VO2+-Doped Lithium Hydroxylammonium Sulphate

ABSTRACT

Single-crystal and powder EPR studies of VO²⁺-doped lithium hydroxylammonium sulphate (LiNH₃OHSO₄) were carried out at room temperature. The results indicate the presence of two magnetically inequivalent VO²⁺ sites. The VO²⁺ ion takes up a substitutional position in the host lattice. The angular variation of EPR spectra in three mutually perpendicular planes were used to determine the spin Hamiltonian parameters, and the values obtained were the following: For Site 1, g_x = 2.0249 ± 0.0002, g_y = 1.9698 ± 0.0002, g_z = 1.9552 ± 0.0002, A_x = (51 ± 2) × 10^?4 cm^?1, A_y = (93 ± 2) × 10^?4 cm^?1, and A_z = (165 ± 2) × 10^?4 cm^?1; and for Site 2, g_x = 2.0267 ± 0.0002, g_y = 1.9743 ± 0.0002, g_z = 1.9213 ± 0.0002, A_x = (40 ± 2) × 10^?4 cm^?1, A_y = (80 ± 2) × 10^?4 cm^?1, and A_z = (155 ± 2) × 10^?4 cm^?1. The optical absorption spectrum recorded at room temperature shows four bands. From the optical and EPR data, various molecular coefficients are evaluated, and the nature of bonding in the crystal is discussed.     

Spectrophotometric Determination of the Stability Constants of Co(II) and DPKBH (DI-2-Pyridyl Ketone Benzoylhydrazone)

Abstract

In order to have more information about the thermodynamic properties of the complexes formed by Cobalt(II) and DPKBH (di-2-pyridyl ketone benzoylhydrazone) and for the development of speciation methods for cobalt, the respective stepwise formation constants were determined in ethanolic solution 50% (V/V), at pH 5.3 and 25.0°C. The spectrophotometric method of corresponding solutions was used and the following overall formation constants were obtained: β₁ = 5.305 × 10⁶ M^?1 and β₂ = 8.476 × 10¹⁰ M^?2. The molar absorptivities of the 1:1 (ε₁) and 1:2 (ε₂) complexes (Co(II):DPKBH) were determined to be 4.475 × 10 and 2.994 × 10 (M^?1cm^?1), respectively. The calculated distribution diagram shows the percentage of the species at equilibrium as a function of the free DPKBH concentration.     

Modified Spectrophotometric Method for the Determination of Some Important Antibiotics Through Charge - Transfere Complexation Reaction with Chloranil

Abstract

A new modified Spectrophotometric procedures are presented for the determination of three pharmaceutical antibiotic compounds through charge-transfere complexation reaction with chloranil. The complex shows an absorption mAxima at 550 nm, having a molar absorptivity coefficient of 5.55×10³,7.81×10³ and 1.38×10⁴ 1. mol^?1cm^?1 for ampicillin, amoxycillin and neomycin, respectively. Optimization of the reaction conditions has been investigated Obediance to Beer's law (40μg/ml) permitted the assay of thes drugs in its dosage forms A variety of pharmaceutical dosage forms containing ampicillin, amoxycillin and neomycin are successfully analysed by the proposed procedure.     

Leed,aes and photoemission measurements of epitaxially grown GaAs(001), (111)A and (1̄1̄1̄)B surfaces and their behaviour upon cs adsorption

Epitaxially grown GaAs(001), (111) and (1?1?1?) surfaces and their behaviour on Cs adsorption are studied by LEED, AES and photoemission. Upon heat treatment the clean GaAs(001) surface shows all the structures of the As-stabilized to the Ga-stabilized surface. By careful annealing it is also possible to obtain the As-stabilized surface from the Ga-stabilized surface, which must be due to the diffusion of As from the bulk to the surface. The As-stabilized surface can be recovered from the Ga-stabilized surface by treating the surface at 400°C in an AsH₃ atmosphere. The Cs coverage of all these surfaces is linear with the dosage and shows a sharp breakpoint at 5.3 × 10¹⁴ atoms cm^?2. The photoemission reaches a maximum precisely at the dosage of this break point for the GaAs(001) and GaAs(1?1?1?) surface, whereas for the GaAs(111) surface the maximum in the photoemission is reached at a higher dosage of 6.5 × 10¹⁴ atoms cm^?2. The maximum photoemission from all surfaces is in the order of 50μA Im^?1 for white light (T = 2850 K). LEED measurements show that Cs adsorbs as an amorphous layer on these surfaces at room temperature. Heat treatment of the Cs-activated GaAs (001) surface shows a stability region of 4.7 × 10¹⁴ atoms cm^?2 at 260dgC and one of 2.7 × 10¹⁴ atoms cm^?2 at 340°C without any ordering of the Cs atoms. Heat treatment of the Cs-activated GaAs(111) crystal shows a gradual desorption of Cs up to a coverage of 1 × 10¹⁴ atoms cm^?2, which is stable at 360°C and where LEED shows the formation of the GaAs(111) (√7 × √7)Cs structure. Heat treatment of the Cs-activated GaAs(1?1?1?) crystal shows a stability region at 260°C with a coverage of 3.8 × 10¹⁴ atoms cm^?2 with ordering of the Cs atoms in a GaAs(1?1?1?) (4 × 4)Cs structure and at 340°C a further stability region with a coverage of 1 × 10¹⁴ at cm^?2 with the formation of a GaAs(1?1?1?) (√21 × √21)Cs structure. Possible models of the GaAs(1?1?1?) (4 × 4)Cs, GaAs(1?1?1?)(√21 × √21)Cs and GaAs(111) (√7 × √7)Cs structures are given.     

50 MeV Li3+ ion irradiation effect on structural, electrical, and dielectric properties of PVA-based nanocomposite polymer electrolytes

Nanocomposite polymer electrolyte thin films of polyvinyl alcohol (PVA)-orthophosphoric acid (H₃PO₄)-Al₂O₃ have been prepared by solution cast technique. Films are irradiated with 50 MeV Li³⁺ ions having four different fluences viz. 5?×?10¹⁰, 1?×?10¹¹, 5?×?10¹¹, and 1?×?10¹² ions/cm². The effect of irradiation on polymeric samples has been studied and characterized. X-ray diffraction spectra reveal that percent degree of crystallinity of samples decrease with ion fluences. Glass transition and melting temperatures have been also decreased as observed in differential scanning calorimetry. A possible complexation/interaction has been shown by Fourier transform infrared spectroscopy. Temperature-dependent ionic conductivity shows an Arrhenius behavior before and after glass transition temperature. It is observed that ionic conductivity increases with ion fluences and after a critical fluence, it starts to decrease. Maximum ionic conductivity of ～2.3?×?10^?5 S/cm owing to minimum activation energy of ～0.012 eV has been observed for irradiated electrolyte sample at fluence of 5?×?10¹¹ ions/cm². The dielectric constant and dielectric loss also increase with ion fluences while they decrease with frequency. Transference number of ions shows that the samples are of purely ionic in nature before and after ion irradiation.     

Line strength and collisional broadening coefficients of H2O at 2.7 μm for natural gas quality assurance applications

We employed tunable diode laser absorption spectroscopy to measure the line strength, the methane (CH₄), ethane (C₂H₆) and the propane (C₃H₈) broadening coefficients for the 523–422 H₂O transition at 3619.61 cm^?1. Water amount fractions generated by a stable and accurate humidity transfer standard, traceable to the SI units via the German national humidity standard, were used to calibrate the spectroscopic line strength measurements. We focus on the traceability of the measured line data to the SI and on uncertainty assessments following the guidelines of the Guide to the Expression of Uncertainty in Measurement. We determined the line strength to be (8.42 ± 0.07)×10^?20 cm^?1/(cm^?2 molecule) corresponding to a relative uncertainty of ±0.8%. To the best of our knowledge, we report the first methane, ethane and propane broadening coefficients of (8.037 ± 0.056)×10^?5 cm^?1/hPa, (9.077 ± 0.064)×10^?5 cm^?1/hPa and (10.469 ± 0.073)×10^?5 cm^?1/hPa for the 523–422 H₂O transition at 3619.61 cm^?1, respectively. The relative combined uncertainties of the stated CH₄, C₂H₆ and C₃H₈ broadening coefficients are in the ±0.7% range.     

Charge transfer reaction of multi-charged oxygen ions with O2

The rate of transfer of electrons from O₂ to O²⁺ and O³⁺ has been measured at energies ? 2 eV using a stored ion technique. The rate for O²⁺ is k = 1.0(0.3) × 10^?9 cm³/s and for O³⁺, k = 2.5(0.3) × 10^?9 cm³/s, compared to calculated Langevin rates of 1.8 × 10^?9 cm³/s and 2.7 × 10^?9 cm³/s respectively.     

Beam transport

Abstract

Dopant distribution, electrical activity and damage annealing of high-dose (～5 × 10¹⁵ cm²) Ga-implanted silicon samples annealed by conventional thermal annealing have been studied by alpha particle back-scattering, differential Hall effect and ellipsometry measurements. Back-scattering spectra show that there is no long tail of Ga atoms in the as-implanted samples. Upon annealing these samples the damaged amorphous layer recrystallizes at about 570°C by solid phase epitaxy. During the epitaxial regrowth the dopant atom distribution seems to be modified. Further, very high levels of electrical activaton of Ga-atoms (～3 × 10²⁰ cm^?3), much higher than the maximum solubility limit of Ga in Si (4.5 × 10¹⁹ cm^?3), is achieved by thermal annealing of the sample at ～570°C. This is comparable to the doping achieved by laser annealing of the Ga implanted Si. All the above three measurements show that there is residual damage in the high dose (?10¹⁵cm^?2) implanted samples after the recrystallization at about 570°C. This may be related to strain in the lattice at the high concentrations of metastable substitutional Ga atoms. Annealing at higher temperature reduces the electrical activity of Ga atoms, possibly by driving out the metastably high substitutional concentrations of Ga-atoms into electrically inactive clusters or precipitates.